Patent
US 10,816,828MULTI-STACK GRAPHENE STRUCTURE AND DEVICE INCLUDING THE SAME
Wonjae JOO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,816,828Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a multi-stack graphene structure according to an example embodiment; [28]
FIG. 2 is a schematic perspective view of the multi-stack graphene structure of
FIG. 3 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [30]
FIG. 4 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [31]
FIG. 5 is a schematic cross-sectional view of a device according to an example embodiment; [32]
FIG. 6 is a schematic perspective view of the device of
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 8 is a schematic cross-sectional view of a device according to another example embodiment; [35]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
FIG. 16 is a schematic cross-sectional view of a device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
. Canceled
. Canceled
: The multi-stack graphene structure of claim 10, wherein the pattern is one of a one-dimensional (i D) pattern and a two-dimensional (2 D) pattern. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is an amorphous single carbon atomic layer. Original
. Canceled
. Canceled
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers comprise at least one material selected from the group consisting of A 1 2 0 3, Hf O 2, SiO 2, Si 3 N 4, ZrO 2, and Ta 2 0 5. Previously presented
: A multi-stack graphene structure comprising: a plurality of graphene layers spaced apart from each other, each of the plurality of graphene layers comprising amorphous graphene; a plurality of thin film dielectric layers respectively provided between each graphene layer of the plurality graphene layers; and an electric field former configured to apply an electric field to each of the plurality of graphene layers. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is present in a form of a pattern. Original
: The multi-stack graphene structure of claim 9, wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm. Previously presented
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers are formed by using atomic layer deposition. Previously presented
: A device comprising the multi-stack graphene structure of claim 9. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than 1 nm. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than I nrn. New a reflecting layer provided between the substrate oxide and the plurality of thin film dielectric layers oxide and the plurality of thin film dielectric layers a substrate; and a waveguide on the substrate, provided on an upper portion or a lower portion of a light source configured to emit light to one a dielectric layer between the waveguide and the a grating provided in at least one surface of the inside of the waveguide or emit the light to an 9, the plurality of graphene layers is 3 to 9, the plurality of graphene layers is 7 to 22, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film and each of the plurality of graphene layers has 9, wherein each of the plurality of thin film and each of the plurality of graphene layers has
Layer stacks claimed or described, ordered top of device to substrate.
multi-stack graphene structure
multi-stack graphene structure device with gate
Materials described outside the worked examples.
amorphous graphene
Al₂O₃
HfO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.35 nm | amorphous graphene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,816,828Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a multi-stack graphene structure according to an example embodiment; [28]
FIG. 2 is a schematic perspective view of the multi-stack graphene structure of
FIG. 3 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [30]
FIG. 4 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [31]
FIG. 5 is a schematic cross-sectional view of a device according to an example embodiment; [32]
FIG. 6 is a schematic perspective view of the device of
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 8 is a schematic cross-sectional view of a device according to another example embodiment; [35]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
FIG. 16 is a schematic cross-sectional view of a device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
. Canceled
. Canceled
: The multi-stack graphene structure of claim 10, wherein the pattern is one of a one-dimensional (i D) pattern and a two-dimensional (2 D) pattern. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is an amorphous single carbon atomic layer. Original
. Canceled
. Canceled
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers comprise at least one material selected from the group consisting of A 1 2 0 3, Hf O 2, SiO 2, Si 3 N 4, ZrO 2, and Ta 2 0 5. Previously presented
: A multi-stack graphene structure comprising: a plurality of graphene layers spaced apart from each other, each of the plurality of graphene layers comprising amorphous graphene; a plurality of thin film dielectric layers respectively provided between each graphene layer of the plurality graphene layers; and an electric field former configured to apply an electric field to each of the plurality of graphene layers. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is present in a form of a pattern. Original
: The multi-stack graphene structure of claim 9, wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm. Previously presented
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers are formed by using atomic layer deposition. Previously presented
: A device comprising the multi-stack graphene structure of claim 9. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than 1 nm. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than I nrn. New a reflecting layer provided between the substrate oxide and the plurality of thin film dielectric layers oxide and the plurality of thin film dielectric layers a substrate; and a waveguide on the substrate, provided on an upper portion or a lower portion of a light source configured to emit light to one a dielectric layer between the waveguide and the a grating provided in at least one surface of the inside of the waveguide or emit the light to an 9, the plurality of graphene layers is 3 to 9, the plurality of graphene layers is 7 to 22, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film and each of the plurality of graphene layers has 9, wherein each of the plurality of thin film and each of the plurality of graphene layers has
Layer stacks claimed or described, ordered top of device to substrate.
multi-stack graphene structure
multi-stack graphene structure device with gate
Materials described outside the worked examples.
amorphous graphene
Al₂O₃
HfO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.35 nm | amorphous graphene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,816,828Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a multi-stack graphene structure according to an example embodiment; [28]
FIG. 2 is a schematic perspective view of the multi-stack graphene structure of
FIG. 3 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [30]
FIG. 4 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [31]
FIG. 5 is a schematic cross-sectional view of a device according to an example embodiment; [32]
FIG. 6 is a schematic perspective view of the device of
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 8 is a schematic cross-sectional view of a device according to another example embodiment; [35]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
FIG. 16 is a schematic cross-sectional view of a device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
. Canceled
. Canceled
: The multi-stack graphene structure of claim 10, wherein the pattern is one of a one-dimensional (i D) pattern and a two-dimensional (2 D) pattern. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is an amorphous single carbon atomic layer. Original
. Canceled
. Canceled
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers comprise at least one material selected from the group consisting of A 1 2 0 3, Hf O 2, SiO 2, Si 3 N 4, ZrO 2, and Ta 2 0 5. Previously presented
: A multi-stack graphene structure comprising: a plurality of graphene layers spaced apart from each other, each of the plurality of graphene layers comprising amorphous graphene; a plurality of thin film dielectric layers respectively provided between each graphene layer of the plurality graphene layers; and an electric field former configured to apply an electric field to each of the plurality of graphene layers. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is present in a form of a pattern. Original
: The multi-stack graphene structure of claim 9, wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm. Previously presented
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers are formed by using atomic layer deposition. Previously presented
: A device comprising the multi-stack graphene structure of claim 9. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than 1 nm. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than I nrn. New a reflecting layer provided between the substrate oxide and the plurality of thin film dielectric layers oxide and the plurality of thin film dielectric layers a substrate; and a waveguide on the substrate, provided on an upper portion or a lower portion of a light source configured to emit light to one a dielectric layer between the waveguide and the a grating provided in at least one surface of the inside of the waveguide or emit the light to an 9, the plurality of graphene layers is 3 to 9, the plurality of graphene layers is 7 to 22, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film and each of the plurality of graphene layers has 9, wherein each of the plurality of thin film and each of the plurality of graphene layers has
Layer stacks claimed or described, ordered top of device to substrate.
multi-stack graphene structure
multi-stack graphene structure device with gate
Materials described outside the worked examples.
amorphous graphene
Al₂O₃
HfO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.35 nm | amorphous graphene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,816,828Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a multi-stack graphene structure according to an example embodiment; [28]
FIG. 2 is a schematic perspective view of the multi-stack graphene structure of
FIG. 3 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [30]
FIG. 4 is a schematic cross-sectional view of a multi-stack graphene structure according to another example embodiment; [31]
FIG. 5 is a schematic cross-sectional view of a device according to an example embodiment; [32]
FIG. 6 is a schematic perspective view of the device of
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 8 is a schematic cross-sectional view of a device according to another example embodiment; [35]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
FIG. 16 is a schematic cross-sectional view of a device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
. Canceled
. Canceled
: The multi-stack graphene structure of claim 10, wherein the pattern is one of a one-dimensional (i D) pattern and a two-dimensional (2 D) pattern. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is an amorphous single carbon atomic layer. Original
. Canceled
. Canceled
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers comprise at least one material selected from the group consisting of A 1 2 0 3, Hf O 2, SiO 2, Si 3 N 4, ZrO 2, and Ta 2 0 5. Previously presented
: A multi-stack graphene structure comprising: a plurality of graphene layers spaced apart from each other, each of the plurality of graphene layers comprising amorphous graphene; a plurality of thin film dielectric layers respectively provided between each graphene layer of the plurality graphene layers; and an electric field former configured to apply an electric field to each of the plurality of graphene layers. Previously presented
: The multi-stack graphene structure of claim 9, wherein the amorphous graphene is present in a form of a pattern. Original
: The multi-stack graphene structure of claim 9, wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm. Previously presented
: The multi-stack graphene structure of claim 9, wherein the plurality of thin film dielectric layers are formed by using atomic layer deposition. Previously presented
: A device comprising the multi-stack graphene structure of claim 9. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim graphene layers. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 nm.
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than 1 nm. Previously presented
: The multi-stack graphene structure of claim dielectric layers has a thickness less than 20 n m, a thickness less than I nrn. New a reflecting layer provided between the substrate oxide and the plurality of thin film dielectric layers oxide and the plurality of thin film dielectric layers a substrate; and a waveguide on the substrate, provided on an upper portion or a lower portion of a light source configured to emit light to one a dielectric layer between the waveguide and the a grating provided in at least one surface of the inside of the waveguide or emit the light to an 9, the plurality of graphene layers is 3 to 9, the plurality of graphene layers is 7 to 22, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film Previously presented 23, wherein each of the plurality of thin film and each of the plurality of graphene layers has 9, wherein each of the plurality of thin film and each of the plurality of graphene layers has
Layer stacks claimed or described, ordered top of device to substrate.
multi-stack graphene structure
multi-stack graphene structure device with gate
Materials described outside the worked examples.
amorphous graphene
Al₂O₃
HfO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.35 nm | amorphous graphene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
multi-stack graphene structure as waveguide device
SiO₂
Si₃N₄
ZrO₂
Ta₂O₅
amorphous graphene (CVD grown on germanium substrate)
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
| 0.4–0.5 nm |
| — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 3 nm | — |
multi-stack graphene structure as waveguide device
SiO₂
Si₃N₄
ZrO₂
Ta₂O₅
amorphous graphene (CVD grown on germanium substrate)
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
| 0.4–0.5 nm |
| — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 3 nm | — |
multi-stack graphene structure as waveguide device
SiO₂
Si₃N₄
ZrO₂
Ta₂O₅
amorphous graphene (CVD grown on germanium substrate)
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
| 0.4–0.5 nm |
| — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 3 nm | — |
multi-stack graphene structure as waveguide device
SiO₂
Si₃N₄
ZrO₂
Ta₂O₅
amorphous graphene (CVD grown on germanium substrate)
FIG. 7 is a graph of a simulation result for determining a thickness of a gate oxide according to an example embodiment; [34]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 9 is a graph of an absorption characteristic of monolayer graphene according to an example embodiment; [36]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 10 is a graph of an absorption characteristic of a multi-stack graphene structure according to an example embodiment; [37]
FIG. 11 is a graph of comparing performances of monolayer graphene and a multi-stack graphene structure according to an example embodiment; [38]
FIG. 12 is a graph of a phase change characteristic of monolayer graphene according to an example embodiment; [39]
FIG. 13 is a graph of a phase change characteristic of a multi-stack graphene structure according to an example embodiment; [40]
FIG. 14 is a graph comparing performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; [41]
FIG. 15 is a graph comparing the performance of a multi-stack graphene structure based on the number of stacks present according to an example embodiment; and …
| 0.4–0.5 nm |
| — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 3 nm | — |