Patent
US 8,482,037GATED ALGAN/GAN HETEROJUNCTION SCHOTTKY DEVICE
Z HI HE
INTERNATIONAL RECTIFIER CORPORATION·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 8,482,037Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a cross sectional view of a conventional GaN based Schottky structure.
Figure 2 illustrates a schematic diagram of a cascaded A l GaN/GaN "diode" 5 implemented by using a Si Schottky.
Figure 3 illustrates a cross sectional view of a dual metal Schottky diode structure.
Figure 4 illustrates a cross sectional view of a semiconductor device according to an embodiment of the invention.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A semiconductor device comprising: a first layer comprising a first IlI -nitride material; a second layer comprising a second I II -nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a portion of said anode disposed directly on said surface of said second layer; a cathode forming an ohmic contact on said surface of said second layer; an insulating material on said surface of said second layer and in contact with said anode; a portion of a field dielectric la y er that is disposed between said portion of said anode and another portion of said anode.
The semiconductor device of claim 21, wherein said fp field dielectric layer is on said surface of said second layer a nd is for isolating said anode and said cathode.
The semiconductor device of claim 21, wherein said first I II -nitride material comprises GaN.
The semiconductor device of claim 21, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 21, wherein said anode further comprises at least one additional metal section.
Atto rn ey Docket No.: 0400597C Claim 29: The semiconductor device of claim 21, wherein said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, and silicon nitride.
The semiconductor device of claim 21, wherein said first metal section is selected from the group consisting of gold and nickel.
A semiconductor device comprising: a first layer comprising a first I II -nitride material; a second layer comprising a second I II -nitride material for m ing a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on said second layer; a cathode forming an ohmic contact on said second layer; Page 5 IR-2009-04- 5 a CONT PAGE 6 116 ' RCVD AT 2)51 2013 9:03:49 PM [Easte rn Standard Time] ' SVR:W-PTOFAX-003 18 * DNIS:2738300 ` CSID:949 282 1002 * DURATION (m m-ss):02 -33 02/05/2013 TUE 18:45 FAX 9 49 282 1002 FARJAMI & FARJAMI LLP ->->-> USPTO 00 7/016 Attorney Docket No.: 0400597C a field dielectric layer on said second layer for isolating said anode and said cathode, a portion of said field dielectric layer being disposed between a portion of said anode and another portion of said anode.
The semiconductor device of claim 32, wherein [[a]] said portion of said field dielectric layer is disposed between said first metal section and an insulating material on said second layer.
The semiconductor device of claim 32, wherein said anode extends above said field dielectric layer.
The semiconductor device of claim 32, wherein said first I ll -nitride material comprises GaN.
The semiconductor device of claim 32, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 32, wherein said anode further comprises at least one additional metal section.
The semiconductor device of claim 32, wherein said field dielectric layer is selected from the group consisting of silicon nitride and silicon oxide.
The semiconductor device of claim 32, wherein said first metal section is selected from the group consisting of gold and nickel.
Layer stacks claimed or described, ordered top of device to substrate.
gated AlGaN/GaN heterojunction Schottky device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–30 V | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,482,037Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a cross sectional view of a conventional GaN based Schottky structure.
Figure 2 illustrates a schematic diagram of a cascaded A l GaN/GaN "diode" 5 implemented by using a Si Schottky.
Figure 3 illustrates a cross sectional view of a dual metal Schottky diode structure.
Figure 4 illustrates a cross sectional view of a semiconductor device according to an embodiment of the invention.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20 canceled
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A semiconductor device comprising: a first layer comprising a first IlI -nitride material; a second layer comprising a second I II -nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a portion of said anode disposed directly on said surface of said second layer; a cathode forming an ohmic contact on said surface of said second layer; an insulating material on said surface of said second layer and in contact with said anode; a portion of a field dielectric la y er that is disposed between said portion of said anode and another portion of said anode.
The semiconductor device of claim 21, wherein said fp field dielectric layer is on said surface of said second layer a nd is for isolating said anode and said cathode.
The semiconductor device of claim 21, wherein said first I II -nitride material comprises GaN.
The semiconductor device of claim 21, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 21, wherein said anode further comprises at least one additional metal section.
Atto rn ey Docket No.: 0400597C Claim 29: The semiconductor device of claim 21, wherein said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, and silicon nitride.
The semiconductor device of claim 21, wherein said first metal section is selected from the group consisting of gold and nickel.
A semiconductor device comprising: a first layer comprising a first I II -nitride material; a second layer comprising a second I II -nitride material for m ing a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on said second layer; a cathode forming an ohmic contact on said second layer; Page 5 IR-2009-04- 5 a CONT PAGE 6 116 ' RCVD AT 2)51 2013 9:03:49 PM [Easte rn Standard Time] ' SVR:W-PTOFAX-003 18 * DNIS:2738300 ` CSID:949 282 1002 * DURATION (m m-ss):02 -33 02/05/2013 TUE 18:45 FAX 9 49 282 1002 FARJAMI & FARJAMI LLP ->->-> USPTO 00 7/016 Attorney Docket No.: 0400597C a field dielectric layer on said second layer for isolating said anode and said cathode, a portion of said field dielectric layer being disposed between a portion of said anode and another portion of said anode.
The semiconductor device of claim 32, wherein [[a]] said portion of said field dielectric layer is disposed between said first metal section and an insulating material on said second layer.
The semiconductor device of claim 32, wherein said anode extends above said field dielectric layer.
The semiconductor device of claim 32, wherein said first I ll -nitride material comprises GaN.
The semiconductor device of claim 32, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 32, wherein said anode further comprises at least one additional metal section.
The semiconductor device of claim 32, wherein said field dielectric layer is selected from the group consisting of silicon nitride and silicon oxide.
The semiconductor device of claim 32, wherein said first metal section is selected from the group consisting of gold and nickel.
Layer stacks claimed or described, ordered top of device to substrate.
gated AlGaN/GaN heterojunction Schottky device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–30 V | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,482,037Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a cross sectional view of a conventional GaN based Schottky structure.
Figure 2 illustrates a schematic diagram of a cascaded A l GaN/GaN "diode" 5 implemented by using a Si Schottky.
Figure 3 illustrates a cross sectional view of a dual metal Schottky diode structure.
Figure 4 illustrates a cross sectional view of a semiconductor device according to an embodiment of the invention.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20 canceled
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A semiconductor device comprising: a first layer comprising a first IlI -nitride material; a second layer comprising a second I II -nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a portion of said anode disposed directly on said surface of said second layer; a cathode forming an ohmic contact on said surface of said second layer; an insulating material on said surface of said second layer and in contact with said anode; a portion of a field dielectric la y er that is disposed between said portion of said anode and another portion of said anode.
The semiconductor device of claim 21, wherein said fp field dielectric layer is on said surface of said second layer a nd is for isolating said anode and said cathode.
The semiconductor device of claim 21, wherein said first I II -nitride material comprises GaN.
The semiconductor device of claim 21, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 21, wherein said anode further comprises at least one additional metal section.
Atto rn ey Docket No.: 0400597C Claim 29: The semiconductor device of claim 21, wherein said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, and silicon nitride.
The semiconductor device of claim 21, wherein said first metal section is selected from the group consisting of gold and nickel.
A semiconductor device comprising: a first layer comprising a first I II -nitride material; a second layer comprising a second I II -nitride material for m ing a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on said second layer; a cathode forming an ohmic contact on said second layer; Page 5 IR-2009-04- 5 a CONT PAGE 6 116 ' RCVD AT 2)51 2013 9:03:49 PM [Easte rn Standard Time] ' SVR:W-PTOFAX-003 18 * DNIS:2738300 ` CSID:949 282 1002 * DURATION (m m-ss):02 -33 02/05/2013 TUE 18:45 FAX 9 49 282 1002 FARJAMI & FARJAMI LLP ->->-> USPTO 00 7/016 Attorney Docket No.: 0400597C a field dielectric layer on said second layer for isolating said anode and said cathode, a portion of said field dielectric layer being disposed between a portion of said anode and another portion of said anode.
The semiconductor device of claim 32, wherein [[a]] said portion of said field dielectric layer is disposed between said first metal section and an insulating material on said second layer.
The semiconductor device of claim 32, wherein said anode extends above said field dielectric layer.
The semiconductor device of claim 32, wherein said first I ll -nitride material comprises GaN.
The semiconductor device of claim 32, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 32, wherein said anode further comprises at least one additional metal section.
The semiconductor device of claim 32, wherein said field dielectric layer is selected from the group consisting of silicon nitride and silicon oxide.
The semiconductor device of claim 32, wherein said first metal section is selected from the group consisting of gold and nickel.
Layer stacks claimed or described, ordered top of device to substrate.
gated AlGaN/GaN heterojunction Schottky device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–30 V | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,482,037Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a cross sectional view of a conventional GaN based Schottky structure.
Figure 2 illustrates a schematic diagram of a cascaded A l GaN/GaN "diode" 5 implemented by using a Si Schottky.
Figure 3 illustrates a cross sectional view of a dual metal Schottky diode structure.
Figure 4 illustrates a cross sectional view of a semiconductor device according to an embodiment of the invention.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20 canceled
canceled
canceled
canceled
canceled
canceled
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canceled
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A semiconductor device comprising: a first layer comprising a first IlI -nitride material; a second layer comprising a second I II -nitride material forming a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on a surface of said second layer, a portion of said anode disposed directly on said surface of said second layer; a cathode forming an ohmic contact on said surface of said second layer; an insulating material on said surface of said second layer and in contact with said anode; a portion of a field dielectric la y er that is disposed between said portion of said anode and another portion of said anode.
The semiconductor device of claim 21, wherein said fp field dielectric layer is on said surface of said second layer a nd is for isolating said anode and said cathode.
The semiconductor device of claim 21, wherein said first I II -nitride material comprises GaN.
The semiconductor device of claim 21, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 21, wherein said anode further comprises at least one additional metal section.
Atto rn ey Docket No.: 0400597C Claim 29: The semiconductor device of claim 21, wherein said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, and silicon nitride.
The semiconductor device of claim 21, wherein said first metal section is selected from the group consisting of gold and nickel.
A semiconductor device comprising: a first layer comprising a first I II -nitride material; a second layer comprising a second I II -nitride material for m ing a heterojunction with said first layer to generate a two dimensional electron gas (2DEG) within said first layer; an anode comprising at least a first metal section forming a Schottky contact on said second layer; a cathode forming an ohmic contact on said second layer; Page 5 IR-2009-04- 5 a CONT PAGE 6 116 ' RCVD AT 2)51 2013 9:03:49 PM [Easte rn Standard Time] ' SVR:W-PTOFAX-003 18 * DNIS:2738300 ` CSID:949 282 1002 * DURATION (m m-ss):02 -33 02/05/2013 TUE 18:45 FAX 9 49 282 1002 FARJAMI & FARJAMI LLP ->->-> USPTO 00 7/016 Attorney Docket No.: 0400597C a field dielectric layer on said second layer for isolating said anode and said cathode, a portion of said field dielectric layer being disposed between a portion of said anode and another portion of said anode.
The semiconductor device of claim 32, wherein [[a]] said portion of said field dielectric layer is disposed between said first metal section and an insulating material on said second layer.
The semiconductor device of claim 32, wherein said anode extends above said field dielectric layer.
The semiconductor device of claim 32, wherein said first I ll -nitride material comprises GaN.
The semiconductor device of claim 32, wherein said second I II -nitride material comprises AlGaN.
The semiconductor device of claim 32, wherein said anode further comprises at least one additional metal section.
The semiconductor device of claim 32, wherein said field dielectric layer is selected from the group consisting of silicon nitride and silicon oxide.
The semiconductor device of claim 32, wherein said first metal section is selected from the group consisting of gold and nickel.
Layer stacks claimed or described, ordered top of device to substrate.
gated AlGaN/GaN heterojunction Schottky device
Materials described outside the worked examples.
GaN
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–30 V | — |
Related documents with shared materials, methods, properties, or citations.
gold
Au
nickel
Ni
insulating material
field dielectric layer material
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
gold
Au
nickel
Ni
insulating material
field dielectric layer material
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
gold
Au
nickel
Ni
insulating material
field dielectric layer material
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.
gold
Au
nickel
Ni
insulating material
field dielectric layer material
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
Figure 5 illustrates an estimated current versus voltage (IV) graph comparing a 10 standard Schottky diode to a semiconductor device according to an embodiment of the invention.