Abstract

This work reports a technique for determination of deep level concentration in AlGaN/GaN HEMT structures based on detection of free holes created by optically induced transitions of electrons from deep levels to the conduction band. The method provides quantitative estimation of deep-level traps in the AlGaN barrier and information on their spatial location. It is verified on GaN HEMTs grown on SiC and GaN substrates.

Abstract

This work reports a technique for determination of deep level concentration in AlGaN/GaN HEMT structures based on detection of free holes created by optically induced transitions of electrons from deep levels to the conduction band. The method provides quantitative estimation of deep-level traps in the AlGaN barrier and information on their spatial location. It is verified on GaN HEMTs grown on SiC and GaN substrates.

Abstract

This work reports a technique for determination of deep level concentration in AlGaN/GaN HEMT structures based on detection of free holes created by optically induced transitions of electrons from deep levels to the conduction band. The method provides quantitative estimation of deep-level traps in the AlGaN barrier and information on their spatial location. It is verified on GaN HEMTs grown on SiC and GaN substrates.

Abstract

This work reports a technique for determination of deep level concentration in AlGaN/GaN HEMT structures based on detection of free holes created by optically induced transitions of electrons from deep levels to the conduction band. The method provides quantitative estimation of deep-level traps in the AlGaN barrier and information on their spatial location. It is verified on GaN HEMTs grown on SiC and GaN substrates.