Patent
US 10,351,429DIRECT SYNTHESIS OF REDUCED GRAPHENE OXIDE FILMS ON DIELECTRIC SUBSTRATES
Anirudha V. Sumant
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,351,429Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow diagram of an exemplary method 100 for depositing a R- GO film on dielectric substrate. Any dielectric substrate which can withstand …
FIG. 2 is a schematic flow diagram of an exemplary method 200 for forming a transparent electrode. [0046] Any dielectric substrate which can withstand the …
FIG. 3 is a schematic illustration of a side cross-section of yet another embodiment of a transparent electrode that includes a conductive and optically …
FIG. 4 is a schematic flow diagram of an exemplary method 400 for enhancing heat transfer form an electronic device by depositing a R-GO film on the electronic …
FIG. 5 is a schematic illustration of a side cross-section of an electronic device 500. The electronic device includes a substrate 510 (e.g., a Si/SiO 2 …
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIGS. 10 A-B. The C-K edge of the R-GO samples exhibit a weak SVG 14711335.05-13-2015.I₉N₇QYOPPXXIFW3.SPEC.20.23.1539.2490.1716.2536.svg 0.153 0.59 Chemistry …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a dielectric substrate with a reduced graphene oxide film, comprising: positioning the dielectric substrate in a chamber, the dielectric substrate being free of graphene oxide or a metallic catalyst; depositing the reduced graphene oxide as a uniform layer directly on the dielectric substrate by: purging the chamber with a first gas to adjust a pressure of the chamber to a first pressure; inserting a second gas at a second flow rate and a third gas at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of the second gas onto the chamber; stopping the flow of the third gas into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting a fourth gas into the chamber at a fourth flow rate for a first time period, wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 1, further comprising: reducing the fourth flow rate of the fourth gas to a fifth flow rate; and maintaining the fifth flow rate for a second time period. Previously presented
The method of claim 1, wherein the dielectric substrate includes at least one of silicon oxide, silicon nitride, quartz, sapphire, magnesium oxide, and fused silica. Original
The method of claim 1, wherein the first gas is nitrogen. Original
The method of claim 1, wherein second gas is hydrogen, and wherein the third gas is argon. Original
The method of claim 1, wherein the second pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 1, wherein the first temperature is in the range of 800 degrees Celsius to 1,200 degrees Celsius. Original
The method of claim 1, wherein the third pressure is about 1 Torr. Original
The method of claim 1, wherein the fourth gas is at least one of methane, ethylene and ethane. Original
The method of claim 1, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 1, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 1, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Original
A method for forming a transparent electrode, comprising: providing a transparent dielectric substrate, the dielectric substrate being free of graphene oxide or a metallic catalyst; positioning the transparent dielectric substrate in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of an electrically conductive reduced graphene oxide film as a uniform lay er directly on the transparent dielectric substrate, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K, and wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 13, wherein the fourth flow rate is in the range 800 s ccm to 1,200 s cc m and, wherein the fourth pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 13, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 13, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Previously presented
Canceled
A method of enhancing heat transfer from an electronic device, comprising: depositing a reduced graphene oxide film as a uniform layer directly on a dielectric substrate of the electronic device, the dielectric substrate being free of graphene oxide and a metallic catalyst, the reduced graphene oxide film deposited by: positioning the electronic device in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of a reduced graphene oxide film on a surface of the electronic device, wherein, the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Currently amended
The method of claim 18, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 18, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode
Materials described outside the worked examples.
reduced graphene oxide film
CxOyHz
dielectric substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance ≥80% at thickness up to ~5 nm | ≥ 80 % | CxOyHz |
sheet resistance kOhm/sq to 10 kOhm/sq | ≤ 10000 Ohm/square |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,429Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow diagram of an exemplary method 100 for depositing a R- GO film on dielectric substrate. Any dielectric substrate which can withstand …
FIG. 2 is a schematic flow diagram of an exemplary method 200 for forming a transparent electrode. [0046] Any dielectric substrate which can withstand the …
FIG. 3 is a schematic illustration of a side cross-section of yet another embodiment of a transparent electrode that includes a conductive and optically …
FIG. 4 is a schematic flow diagram of an exemplary method 400 for enhancing heat transfer form an electronic device by depositing a R-GO film on the electronic …
FIG. 5 is a schematic illustration of a side cross-section of an electronic device 500. The electronic device includes a substrate 510 (e.g., a Si/SiO 2 …
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIGS. 10 A-B. The C-K edge of the R-GO samples exhibit a weak SVG 14711335.05-13-2015.I₉N₇QYOPPXXIFW3.SPEC.20.23.1539.2490.1716.2536.svg 0.153 0.59 Chemistry …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a dielectric substrate with a reduced graphene oxide film, comprising: positioning the dielectric substrate in a chamber, the dielectric substrate being free of graphene oxide or a metallic catalyst; depositing the reduced graphene oxide as a uniform layer directly on the dielectric substrate by: purging the chamber with a first gas to adjust a pressure of the chamber to a first pressure; inserting a second gas at a second flow rate and a third gas at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of the second gas onto the chamber; stopping the flow of the third gas into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting a fourth gas into the chamber at a fourth flow rate for a first time period, wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 1, further comprising: reducing the fourth flow rate of the fourth gas to a fifth flow rate; and maintaining the fifth flow rate for a second time period. Previously presented
The method of claim 1, wherein the dielectric substrate includes at least one of silicon oxide, silicon nitride, quartz, sapphire, magnesium oxide, and fused silica. Original
The method of claim 1, wherein the first gas is nitrogen. Original
The method of claim 1, wherein second gas is hydrogen, and wherein the third gas is argon. Original
The method of claim 1, wherein the second pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 1, wherein the first temperature is in the range of 800 degrees Celsius to 1,200 degrees Celsius. Original
The method of claim 1, wherein the third pressure is about 1 Torr. Original
The method of claim 1, wherein the fourth gas is at least one of methane, ethylene and ethane. Original
The method of claim 1, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 1, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 1, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Original
A method for forming a transparent electrode, comprising: providing a transparent dielectric substrate, the dielectric substrate being free of graphene oxide or a metallic catalyst; positioning the transparent dielectric substrate in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of an electrically conductive reduced graphene oxide film as a uniform lay er directly on the transparent dielectric substrate, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K, and wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 13, wherein the fourth flow rate is in the range 800 s ccm to 1,200 s cc m and, wherein the fourth pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 13, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 13, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Previously presented
Canceled
A method of enhancing heat transfer from an electronic device, comprising: depositing a reduced graphene oxide film as a uniform layer directly on a dielectric substrate of the electronic device, the dielectric substrate being free of graphene oxide and a metallic catalyst, the reduced graphene oxide film deposited by: positioning the electronic device in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of a reduced graphene oxide film on a surface of the electronic device, wherein, the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Currently amended
The method of claim 18, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 18, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode
Materials described outside the worked examples.
reduced graphene oxide film
CxOyHz
dielectric substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance ≥80% at thickness up to ~5 nm | ≥ 80 % | CxOyHz |
sheet resistance kOhm/sq to 10 kOhm/sq | ≤ 10000 Ohm/square |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,429Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow diagram of an exemplary method 100 for depositing a R- GO film on dielectric substrate. Any dielectric substrate which can withstand …
FIG. 2 is a schematic flow diagram of an exemplary method 200 for forming a transparent electrode. [0046] Any dielectric substrate which can withstand the …
FIG. 3 is a schematic illustration of a side cross-section of yet another embodiment of a transparent electrode that includes a conductive and optically …
FIG. 4 is a schematic flow diagram of an exemplary method 400 for enhancing heat transfer form an electronic device by depositing a R-GO film on the electronic …
FIG. 5 is a schematic illustration of a side cross-section of an electronic device 500. The electronic device includes a substrate 510 (e.g., a Si/SiO 2 …
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIGS. 10 A-B. The C-K edge of the R-GO samples exhibit a weak SVG 14711335.05-13-2015.I₉N₇QYOPPXXIFW3.SPEC.20.23.1539.2490.1716.2536.svg 0.153 0.59 Chemistry …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a dielectric substrate with a reduced graphene oxide film, comprising: positioning the dielectric substrate in a chamber, the dielectric substrate being free of graphene oxide or a metallic catalyst; depositing the reduced graphene oxide as a uniform layer directly on the dielectric substrate by: purging the chamber with a first gas to adjust a pressure of the chamber to a first pressure; inserting a second gas at a second flow rate and a third gas at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of the second gas onto the chamber; stopping the flow of the third gas into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting a fourth gas into the chamber at a fourth flow rate for a first time period, wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 1, further comprising: reducing the fourth flow rate of the fourth gas to a fifth flow rate; and maintaining the fifth flow rate for a second time period. Previously presented
The method of claim 1, wherein the dielectric substrate includes at least one of silicon oxide, silicon nitride, quartz, sapphire, magnesium oxide, and fused silica. Original
The method of claim 1, wherein the first gas is nitrogen. Original
The method of claim 1, wherein second gas is hydrogen, and wherein the third gas is argon. Original
The method of claim 1, wherein the second pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 1, wherein the first temperature is in the range of 800 degrees Celsius to 1,200 degrees Celsius. Original
The method of claim 1, wherein the third pressure is about 1 Torr. Original
The method of claim 1, wherein the fourth gas is at least one of methane, ethylene and ethane. Original
The method of claim 1, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 1, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 1, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Original
A method for forming a transparent electrode, comprising: providing a transparent dielectric substrate, the dielectric substrate being free of graphene oxide or a metallic catalyst; positioning the transparent dielectric substrate in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of an electrically conductive reduced graphene oxide film as a uniform lay er directly on the transparent dielectric substrate, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K, and wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 13, wherein the fourth flow rate is in the range 800 s ccm to 1,200 s cc m and, wherein the fourth pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 13, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 13, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Previously presented
Canceled
A method of enhancing heat transfer from an electronic device, comprising: depositing a reduced graphene oxide film as a uniform layer directly on a dielectric substrate of the electronic device, the dielectric substrate being free of graphene oxide and a metallic catalyst, the reduced graphene oxide film deposited by: positioning the electronic device in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of a reduced graphene oxide film on a surface of the electronic device, wherein, the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Currently amended
The method of claim 18, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 18, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode
Materials described outside the worked examples.
reduced graphene oxide film
CxOyHz
dielectric substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance ≥80% at thickness up to ~5 nm | ≥ 80 % | CxOyHz |
sheet resistance kOhm/sq to 10 kOhm/sq | ≤ 10000 Ohm/square |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,429Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow diagram of an exemplary method 100 for depositing a R- GO film on dielectric substrate. Any dielectric substrate which can withstand …
FIG. 2 is a schematic flow diagram of an exemplary method 200 for forming a transparent electrode. [0046] Any dielectric substrate which can withstand the …
FIG. 3 is a schematic illustration of a side cross-section of yet another embodiment of a transparent electrode that includes a conductive and optically …
FIG. 4 is a schematic flow diagram of an exemplary method 400 for enhancing heat transfer form an electronic device by depositing a R-GO film on the electronic …
FIG. 5 is a schematic illustration of a side cross-section of an electronic device 500. The electronic device includes a substrate 510 (e.g., a Si/SiO 2 …
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIGS. 10 A-B. The C-K edge of the R-GO samples exhibit a weak SVG 14711335.05-13-2015.I₉N₇QYOPPXXIFW3.SPEC.20.23.1539.2490.1716.2536.svg 0.153 0.59 Chemistry …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a dielectric substrate with a reduced graphene oxide film, comprising: positioning the dielectric substrate in a chamber, the dielectric substrate being free of graphene oxide or a metallic catalyst; depositing the reduced graphene oxide as a uniform layer directly on the dielectric substrate by: purging the chamber with a first gas to adjust a pressure of the chamber to a first pressure; inserting a second gas at a second flow rate and a third gas at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of the second gas onto the chamber; stopping the flow of the third gas into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting a fourth gas into the chamber at a fourth flow rate for a first time period, wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 1, further comprising: reducing the fourth flow rate of the fourth gas to a fifth flow rate; and maintaining the fifth flow rate for a second time period. Previously presented
The method of claim 1, wherein the dielectric substrate includes at least one of silicon oxide, silicon nitride, quartz, sapphire, magnesium oxide, and fused silica. Original
The method of claim 1, wherein the first gas is nitrogen. Original
The method of claim 1, wherein second gas is hydrogen, and wherein the third gas is argon. Original
The method of claim 1, wherein the second pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 1, wherein the first temperature is in the range of 800 degrees Celsius to 1,200 degrees Celsius. Original
The method of claim 1, wherein the third pressure is about 1 Torr. Original
The method of claim 1, wherein the fourth gas is at least one of methane, ethylene and ethane. Original
The method of claim 1, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 1, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 1, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Original
A method for forming a transparent electrode, comprising: providing a transparent dielectric substrate, the dielectric substrate being free of graphene oxide or a metallic catalyst; positioning the transparent dielectric substrate in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of an electrically conductive reduced graphene oxide film as a uniform lay er directly on the transparent dielectric substrate, wherein the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K, and wherein the reduced graphene oxide film comprises clusters of carbon having sp3 bonding in the range of 45% to 70%. Currently amended
The method of claim 13, wherein the fourth flow rate is in the range 800 s ccm to 1,200 s cc m and, wherein the fourth pressure is in the range of 250 Torr to 350 Torr. Original
The method of claim 13, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
The method of claim 13, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Previously presented
Canceled
A method of enhancing heat transfer from an electronic device, comprising: depositing a reduced graphene oxide film as a uniform layer directly on a dielectric substrate of the electronic device, the dielectric substrate being free of graphene oxide and a metallic catalyst, the reduced graphene oxide film deposited by: positioning the electronic device in a chamber; purging the chamber with nitrogen to adjust a pressure of the chamber to a first pressure; inserting hydrogen at a second flow rate and argon at a third flow rate into the chamber to increase the pressure inside the chamber to a second pressure, the second pressure greater than the first pressure; increasing a temperature of the chamber to a first temperature; stopping the flow of hydrogen into the chamber; stopping the flow of argon into the chamber; purging the chamber to a third pressure, the third pressure higher than the first pressure and lower than the second pressure; setting the pressure of the chamber at a fourth pressure, the fourth pressure greater than the first pressure and the third pressure; and inserting methane into the chamber at fourth flow rate for a first time period to deposit a predetermined thickness of a reduced graphene oxide film on a surface of the electronic device, wherein, the reduced graphene oxide film has a thermal conductivity in the range of 60 W/m-K to 120 W/m-K. Currently amended
The method of claim 18, wherein the reduced graphene oxide film has an optical transmittance of at least 80 % at a thickness of up to about 5 nm. Original
The method of claim 18, wherein the reduced graphene oxide film has a sheet resistance of kOhm/square to 10 kOhm/square. Original
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode
Materials described outside the worked examples.
reduced graphene oxide film
CxOyHz
dielectric substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance ≥80% at thickness up to ~5 nm | ≥ 80 % | CxOyHz |
sheet resistance kOhm/sq to 10 kOhm/sq | ≤ 10000 Ohm/square |
Related documents with shared materials, methods, properties, or citations.
silicon oxide
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silicon nitride
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sapphire
Al₂O₃
magnesium oxide
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methane
CH₄
hydrogen
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argon
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FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
thermal conductivity 60-120 W/m-K | 60–120 W/m-K | CxOyHz |
sp3 bonding fraction 45-70% in carbon clusters | 45–70 % | CxOyHz |
Pressure | 250–350 Torr | — |
silicon oxide
SiO₂
silicon nitride
Si₃N₄
sapphire
Al₂O₃
magnesium oxide
MgO
methane
CH₄
hydrogen
H₂
argon
Ar
nitrogen
N₂
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
thermal conductivity 60-120 W/m-K | 60–120 W/m-K | CxOyHz |
sp3 bonding fraction 45-70% in carbon clusters | 45–70 % | CxOyHz |
Pressure | 250–350 Torr | — |
silicon oxide
SiO₂
silicon nitride
Si₃N₄
sapphire
Al₂O₃
magnesium oxide
MgO
methane
CH₄
hydrogen
H₂
argon
Ar
nitrogen
N₂
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
thermal conductivity 60-120 W/m-K | 60–120 W/m-K | CxOyHz |
sp3 bonding fraction 45-70% in carbon clusters | 45–70 % | CxOyHz |
Pressure | 250–350 Torr | — |
silicon oxide
SiO₂
silicon nitride
Si₃N₄
sapphire
Al₂O₃
magnesium oxide
MgO
methane
CH₄
hydrogen
H₂
argon
Ar
nitrogen
N₂
FIG. 6A is an atomic force microscope (AFM) image of a R-GO film deposited on copper then transferred to SiO₂ (scale bar 300 nm), revealing a cross-sectional …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIG. 7A, the light transmission of the R-GO films reached a transmittance of 81.2 ± 0.2% at 514 nm for the 4.8 ± 0.5 nm thick film on quartz, with sheet …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIGS. 8B and 9A). From the TEM results, it was observed that the R-GO films are composed of nanoscale clusters of carbon (about 5 nm diameter). The SA E D …
FIG. 9B shows the integrated C-K edge STXM image of the 10 nm thick R-GO film between 280 -320 eV photon energies. The transmission image is converted to …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 11. This indicates that the material structure of the R-GO film is largely independent of the substrate of deposition. The similarity in chemical …
FIG. 12A is a XPS survey scan of R-GO film deposited on the 100 mm fused silica wafer which indicate the presence of oxygen on the surface of R-GO sample;
FIG. 13A). The thermal conductivity of the R-GO-Copper composite decreases with increasing R-GO film thickness from the neat copper value. This trend indicates …
FIG. 14 is a near edge x-ray absorption fine structure (NEXAFS) C-K edge spectra of a suspended 10 nm thick R-GO film. [0026]
FIG. 15A-B shows XPS spectra of R-G O deposited on copper, then transferred onto Au/Si O 2/Si substrate, confirming that the substrate of deposition has little …
thermal conductivity 60-120 W/m-K | 60–120 W/m-K | CxOyHz |
sp3 bonding fraction 45-70% in carbon clusters | 45–70 % | CxOyHz |
Pressure | 250–350 Torr | — |