Patent
US 11,124,870TRANSFER-FREE METHOD FOR PRODUCING GRAPHENE THIN FILM
Soon-Gil Yoon
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,124,870Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 3 is a schematic view of a chemical vapor deposition system used in a Comparative Example.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 5 is a schematic view of a system used in an Example of the present invention and making it possible to perform transfer-free deposition by sputtering and …
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transfer-free method for producing a transparent electrode comprising a graphene thin film, comprising the steps of: (A) forming a titanium buffer layer on a target substrate, the transmittance of the titanium buffer layer formed substrate at 550 nm being decreased by 0.4 + 0.05 % compared to that of the target substrate itself, and (B) growing a graphene thin film on the titanium buffer layer, wherein entire steps throughout (A) to (B) are performed in-situ in the same system, and thus performed in an oxygen- free atmosphere in which titanium is not oxidized, I D/u G of the graphene thin film is 0.01 ± 0.01, and the graphene thin film is made of monolayer graphene 1 wherein the transmittance of graphene thin film formed substrate at 550 nm being 97.4 +1% relative to the titanium buffer layer formed substrate. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps of forming the titanium buffer layer and the graphene thin film are repeated after step (B). Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps are performed at 400 ° C or below. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the forming of the titanium buffer layer in step (A) is performed by a method selected from the group consisting of sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), thermal evaporation, thermal oxidation, e-beam evaporation, molecular beam epitaxy (MBE), pulsed laser deposition (PLD), chemical vapor deposition (CVD), a sol-gel method, and combinations thereof, and the growing of the graphene thin film in step (B) is performed by a chemical vapor deposition method selected from the group consisting of plasma-enhanced chemical vapor deposition (P EC VD), rapid thermal chemical vapor deposition (RTCVD), inductively coupled plasma-chemical vapor deposition (I CP-CVD), low-pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), and combinations thereof. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the titanium buffer layer has a thickness of 10 to 20 nm. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the target substrate is made of glass, SiO2, or a synthetic resin containing an oxygen atom in its structure. Currently amended
The transfer-free method of claim 11, further comprising, before step (A) or (B), a step of forming a masking pattern having a predetermined shape. Original
The transfer-free method of claim 12, wherein steps (A) and (B) are all performed at 400 0 C.
The transfer-free method of claim 11, wherein steps (A) and (B) are all performed at 400 0 C. or below. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode comprising graphene thin film
Materials described outside the worked examples.
titanium buffer layer
Ti
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance decrease of Ti buffer layer formed substrate at 550 nm vs. bare substrate | 0.4 % | Ti |
transmittance of graphene thin film formed substrate at 550 nm relative to Ti buffer layer formed substrate |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BIOMOLECULE BIOELECTRONIC DEVICES
GRAPHENE OXIDE SHEET, ARTICLE CONTAINING GRAPHENE-CONTAINING SUBSTANCE PRODUCED BY REDUCING THE GRAPHENE OXIDE SHEET, AND PROCESS FOR PRODUCTION OF THE GRAPHENE OXIDE SHEET
Patent
Atlas literature
Patent
US 11,124,870Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 3 is a schematic view of a chemical vapor deposition system used in a Comparative Example.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 5 is a schematic view of a system used in an Example of the present invention and making it possible to perform transfer-free deposition by sputtering and …
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transfer-free method for producing a transparent electrode comprising a graphene thin film, comprising the steps of: (A) forming a titanium buffer layer on a target substrate, the transmittance of the titanium buffer layer formed substrate at 550 nm being decreased by 0.4 + 0.05 % compared to that of the target substrate itself, and (B) growing a graphene thin film on the titanium buffer layer, wherein entire steps throughout (A) to (B) are performed in-situ in the same system, and thus performed in an oxygen- free atmosphere in which titanium is not oxidized, I D/u G of the graphene thin film is 0.01 ± 0.01, and the graphene thin film is made of monolayer graphene 1 wherein the transmittance of graphene thin film formed substrate at 550 nm being 97.4 +1% relative to the titanium buffer layer formed substrate. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps of forming the titanium buffer layer and the graphene thin film are repeated after step (B). Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps are performed at 400 ° C or below. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the forming of the titanium buffer layer in step (A) is performed by a method selected from the group consisting of sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), thermal evaporation, thermal oxidation, e-beam evaporation, molecular beam epitaxy (MBE), pulsed laser deposition (PLD), chemical vapor deposition (CVD), a sol-gel method, and combinations thereof, and the growing of the graphene thin film in step (B) is performed by a chemical vapor deposition method selected from the group consisting of plasma-enhanced chemical vapor deposition (P EC VD), rapid thermal chemical vapor deposition (RTCVD), inductively coupled plasma-chemical vapor deposition (I CP-CVD), low-pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), and combinations thereof. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the titanium buffer layer has a thickness of 10 to 20 nm. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the target substrate is made of glass, SiO2, or a synthetic resin containing an oxygen atom in its structure. Currently amended
The transfer-free method of claim 11, further comprising, before step (A) or (B), a step of forming a masking pattern having a predetermined shape. Original
The transfer-free method of claim 12, wherein steps (A) and (B) are all performed at 400 0 C.
The transfer-free method of claim 11, wherein steps (A) and (B) are all performed at 400 0 C. or below. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode comprising graphene thin film
Materials described outside the worked examples.
titanium buffer layer
Ti
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance decrease of Ti buffer layer formed substrate at 550 nm vs. bare substrate | 0.4 % | Ti |
transmittance of graphene thin film formed substrate at 550 nm relative to Ti buffer layer formed substrate |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BIOMOLECULE BIOELECTRONIC DEVICES
GRAPHENE OXIDE SHEET, ARTICLE CONTAINING GRAPHENE-CONTAINING SUBSTANCE PRODUCED BY REDUCING THE GRAPHENE OXIDE SHEET, AND PROCESS FOR PRODUCTION OF THE GRAPHENE OXIDE SHEET
Patent
Atlas literature
Patent
US 11,124,870Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 3 is a schematic view of a chemical vapor deposition system used in a Comparative Example.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 5 is a schematic view of a system used in an Example of the present invention and making it possible to perform transfer-free deposition by sputtering and …
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transfer-free method for producing a transparent electrode comprising a graphene thin film, comprising the steps of: (A) forming a titanium buffer layer on a target substrate, the transmittance of the titanium buffer layer formed substrate at 550 nm being decreased by 0.4 + 0.05 % compared to that of the target substrate itself, and (B) growing a graphene thin film on the titanium buffer layer, wherein entire steps throughout (A) to (B) are performed in-situ in the same system, and thus performed in an oxygen- free atmosphere in which titanium is not oxidized, I D/u G of the graphene thin film is 0.01 ± 0.01, and the graphene thin film is made of monolayer graphene 1 wherein the transmittance of graphene thin film formed substrate at 550 nm being 97.4 +1% relative to the titanium buffer layer formed substrate. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps of forming the titanium buffer layer and the graphene thin film are repeated after step (B). Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps are performed at 400 ° C or below. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the forming of the titanium buffer layer in step (A) is performed by a method selected from the group consisting of sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), thermal evaporation, thermal oxidation, e-beam evaporation, molecular beam epitaxy (MBE), pulsed laser deposition (PLD), chemical vapor deposition (CVD), a sol-gel method, and combinations thereof, and the growing of the graphene thin film in step (B) is performed by a chemical vapor deposition method selected from the group consisting of plasma-enhanced chemical vapor deposition (P EC VD), rapid thermal chemical vapor deposition (RTCVD), inductively coupled plasma-chemical vapor deposition (I CP-CVD), low-pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), and combinations thereof. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the titanium buffer layer has a thickness of 10 to 20 nm. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the target substrate is made of glass, SiO2, or a synthetic resin containing an oxygen atom in its structure. Currently amended
The transfer-free method of claim 11, further comprising, before step (A) or (B), a step of forming a masking pattern having a predetermined shape. Original
The transfer-free method of claim 12, wherein steps (A) and (B) are all performed at 400 0 C.
The transfer-free method of claim 11, wherein steps (A) and (B) are all performed at 400 0 C. or below. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode comprising graphene thin film
Materials described outside the worked examples.
titanium buffer layer
Ti
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance decrease of Ti buffer layer formed substrate at 550 nm vs. bare substrate | 0.4 % | Ti |
transmittance of graphene thin film formed substrate at 550 nm relative to Ti buffer layer formed substrate |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BIOMOLECULE BIOELECTRONIC DEVICES
GRAPHENE OXIDE SHEET, ARTICLE CONTAINING GRAPHENE-CONTAINING SUBSTANCE PRODUCED BY REDUCING THE GRAPHENE OXIDE SHEET, AND PROCESS FOR PRODUCTION OF THE GRAPHENE OXIDE SHEET
Patent
Atlas literature
Patent
US 11,124,870Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 3 is a schematic view of a chemical vapor deposition system used in a Comparative Example.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 5 is a schematic view of a system used in an Example of the present invention and making it possible to perform transfer-free deposition by sputtering and …
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transfer-free method for producing a transparent electrode comprising a graphene thin film, comprising the steps of: (A) forming a titanium buffer layer on a target substrate, the transmittance of the titanium buffer layer formed substrate at 550 nm being decreased by 0.4 + 0.05 % compared to that of the target substrate itself, and (B) growing a graphene thin film on the titanium buffer layer, wherein entire steps throughout (A) to (B) are performed in-situ in the same system, and thus performed in an oxygen- free atmosphere in which titanium is not oxidized, I D/u G of the graphene thin film is 0.01 ± 0.01, and the graphene thin film is made of monolayer graphene 1 wherein the transmittance of graphene thin film formed substrate at 550 nm being 97.4 +1% relative to the titanium buffer layer formed substrate. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps of forming the titanium buffer layer and the graphene thin film are repeated after step (B). Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the steps are performed at 400 ° C or below. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the forming of the titanium buffer layer in step (A) is performed by a method selected from the group consisting of sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), thermal evaporation, thermal oxidation, e-beam evaporation, molecular beam epitaxy (MBE), pulsed laser deposition (PLD), chemical vapor deposition (CVD), a sol-gel method, and combinations thereof, and the growing of the graphene thin film in step (B) is performed by a chemical vapor deposition method selected from the group consisting of plasma-enhanced chemical vapor deposition (P EC VD), rapid thermal chemical vapor deposition (RTCVD), inductively coupled plasma-chemical vapor deposition (I CP-CVD), low-pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PE-ALD), and combinations thereof. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the titanium buffer layer has a thickness of 10 to 20 nm. Currently amended
The transfer-free method for producing a transparent electrode of claim 1, wherein the target substrate is made of glass, SiO2, or a synthetic resin containing an oxygen atom in its structure. Currently amended
The transfer-free method of claim 11, further comprising, before step (A) or (B), a step of forming a masking pattern having a predetermined shape. Original
The transfer-free method of claim 12, wherein steps (A) and (B) are all performed at 400 0 C.
The transfer-free method of claim 11, wherein steps (A) and (B) are all performed at 400 0 C. or below. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode comprising graphene thin film
Materials described outside the worked examples.
titanium buffer layer
Ti
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 depicts graphs showing surface roughness, transmittance and sheet resistance characteristics before and after annealing of titanium buffer layers.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance decrease of Ti buffer layer formed substrate at 550 nm vs. bare substrate | 0.4 % | Ti |
transmittance of graphene thin film formed substrate at 550 nm relative to Ti buffer layer formed substrate |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BIOMOLECULE BIOELECTRONIC DEVICES
GRAPHENE OXIDE SHEET, ARTICLE CONTAINING GRAPHENE-CONTAINING SUBSTANCE PRODUCED BY REDUCING THE GRAPHENE OXIDE SHEET, AND PROCESS FOR PRODUCTION OF THE GRAPHENE OXIDE SHEET
target substrate
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
| 97.4 % |
C |
ID/IG of graphene thin film | 0.01 dimensionless | C |
Pressure | 0.6–6.6 Pa | — |
Temperature | 900–930 °C | — |
Thickness | 10–20 nm | — |
Temperature | 150–400 °C | — |
Temperature | 100–300 °C | — |
Temperature | 150–200 °C | — |
target substrate
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
| 97.4 % |
C |
ID/IG of graphene thin film | 0.01 dimensionless | C |
Pressure | 0.6–6.6 Pa | — |
Temperature | 900–930 °C | — |
Thickness | 10–20 nm | — |
Temperature | 150–400 °C | — |
Temperature | 100–300 °C | — |
Temperature | 150–200 °C | — |
target substrate
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
| 97.4 % |
C |
ID/IG of graphene thin film | 0.01 dimensionless | C |
Pressure | 0.6–6.6 Pa | — |
Temperature | 900–930 °C | — |
Thickness | 10–20 nm | — |
Temperature | 150–400 °C | — |
Temperature | 100–300 °C | — |
Temperature | 150–200 °C | — |
target substrate
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 2A depicts graphs and AFM images showing the changes in surface roughness by annealing of nickel and copper thin films.
FIG. 4 depicts AFM images and EELS mapping images showing the characteristics of a graphene thin film produced in a Comparative Example.
FIG. 6 depicts TEM images of a graphene thin film produced in an Example of the present invention.
FIG. 7 depicts graphs showing the XPS Ti 2p core level obtained by analyzing the oxidized state of Ti after a Ti film was deposited by DC sputtering in an …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIGS. 8A and 8B depict graphs and AFM images showing the optical and electrical properties of a graphene thin film produced in an Example of the present …
FIG. 9 depicts graphs showing the optical and electrical properties of a thin-film capacitor fabricated using a graphene thin film in an Example of the present …
FIG. 10 depicts graphs the electrical properties of a thin-film capacitor according to a Comparative Example.
| 97.4 % |
C |
ID/IG of graphene thin film | 0.01 dimensionless | C |
Pressure | 0.6–6.6 Pa | — |
Temperature | 900–930 °C | — |
Thickness | 10–20 nm | — |
Temperature | 150–400 °C | — |
Temperature | 100–300 °C | — |
Temperature | 150–200 °C | — |