Patent
US 11,043,792A METHOD FOR GaN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)
Jung Han
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,043,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified depiction of a vertical cavity surface-emitting laser (VCSEL), Y0087.70094US01-6-5304290 according to some embodiments;
FIG. 2 depicts a distributed Bragg reflector that includes porous layers, according to some embodiments;
FIG. 3 illustrates etching characteristics of GaN under various etching conditions; 5
FIG. 4C shows a third pore morphology obtained when etching germanium-doped 10 GaN under third etching conditions;
FIG. 5A depicts a multilayer structure that may be used to form a high-reflective, n- side DBR, according to some embodiments; 15
FIG. 6 is an optical micrograph showing etched openings into a multilayer stack and DBR regions adjacent to the etched openings;
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
FIG. 8 shows measured reflectance from a GaN DBR having nanoporous gallium- 25 nitride layers; and
FIG. 9 shows measured reflectance greater than 99% from a GaN DBR having nanoporous gallium-nitride layers. The features and advantages of the embodiments will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A porous gallium-nitride layer having a majority of its pores with a maximum transverse width less than approximately 100 nm and having a volumetric porosity greater than 10%, wherein an n-type doping density of the porous gallium-nitride layer is between approximately 5x10 19 cm- 3 and approximately 2x10 ° cm 3 wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The porous gallium-nitride layer of claim 1, wherein over half of the pores of the gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Original
The porous gallium-nitride layer of claim 1, wherein the pores have walls with a root-mean-square surface roughness less than approximately 10 nm. Original
The porous gallium-nitride layer of claim 1, wherein the volumetric porosity is greater than 60%. Previously presented
The porous gallium-nitride layer of claim 1 included in an electrode. Previously presented
Canceled
Canceled
6-7. Canceled
Canceled
9-11. Canceled
Canceled
(Withdrawn-Currently amended) A semiconductor light emitting device comprising: at least one buried porous gallium-nitride layer wherein a majority of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width less than approximately 100 nm and the at least one buried porous gallium-nitride layer has a volumetric porosity greater than 10%, wherein the at least one buried porous gallium-nitride layer has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³ wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The semiconductor light emitting device of claim 13, wherein over 70% of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Withdrawn
The semiconductor light emitting device of claim 13, wherein the at least one buried porous gallium-nitride layer comprises a plurality of porous galliu m -nitride layers separated by nonporous gallium-nitride layers a rr anged in a first distributed Bragg reflector (DBR). Withdrawn
The semiconductor light emitting device of claim 13, wherein the pores of the at least one buried porous gallium-nitride layer have walls with a root-mean-square surface roughness less than approximately 10 nm. Withdrawn
The semiconductor light emitting device of clai m 15, wherein the plurality of porous gallium-nitride layers include non-porous regions located centrally within the DBR that form a pillar of non-porous gallium nitride. Withdrawn
20-22. Canceled
Canceled
Canceled
The semiconductor light emitting device of claim 25, wherein a dopant for the n- type doping in the at least one buried porous gallium-nitride layer is germanium. Withdrawn
A method for forming porous gallium nitride, the method comprising: exposing heavily-doped gallium nitride to an etchant, wherein the heavily-doped gallium nitride has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³; applying an electrical bias between the etchant and the heavily-doped gallium nitride, wherein the electrical bias has a value between approximately 1.3 volts and 3 volts; and electrochemically etching the heavily-doped gallium nitride to produce porous gallium nitride having a volumetric porosity greater than approximately 10% and a majority of pores with a maximum transverse width less than approximately 100 nm. Previously presented
The method of claim 27, wherein a dopant for the heavily-doped gallium nitride is ger manium. Original
The method of claim 27, wherein the etchant is nitric acid having a concentration between 60% and approximately 80% by weight. Previously presented
The method of claim 27, wherein the electrochemical etching comprises forming a distributed Bragg reflector (DBR), the method further comprising spreading etching current during the electrochemical etching with a current-spreading layer of doped gallium nitride located adjacent to the DBR. Previously presented
The method of claim 27, wherein the heavily-doped gallium nitride is arr anged in a pl u rality of layers that are separated by undoped or moderately-doped gallium-nitride layers. the method f u rther comprising etching via s into the plurality of layers and the undoped or moderately-doped gallium-nitride layers to expose edges of the plurality of layers, wherein the electrochemical etching comprises lateral etching of the plurality of layers. Previously presented
The method of claim 27, wherein the pores comprise lateral pores. Currently amended
The method of claim 27, wherein the pores adjacent, vertically-spaced rows of lateral pores. comprise lateral pores arranged in at least two Currently amended
28-29. Canceled
Canceled
32-33. Canceled
Canceled
36-40. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device with buried porous GaN layer
distributed Bragg reflector (DBR) with porous/nonporous GaN layers
electrode incorporating porous GaN
Materials described outside the worked examples.
porous gallium nitride
GaN
nitric acid etchant
HNO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volumetric porosity of porous GaN (claim lower bound) | >10% | GaN |
volumetric porosity of porous GaN (high porosity dependent claim) | >60% |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,043,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified depiction of a vertical cavity surface-emitting laser (VCSEL), Y0087.70094US01-6-5304290 according to some embodiments;
FIG. 2 depicts a distributed Bragg reflector that includes porous layers, according to some embodiments;
FIG. 3 illustrates etching characteristics of GaN under various etching conditions; 5
FIG. 4C shows a third pore morphology obtained when etching germanium-doped 10 GaN under third etching conditions;
FIG. 5A depicts a multilayer structure that may be used to form a high-reflective, n- side DBR, according to some embodiments; 15
FIG. 6 is an optical micrograph showing etched openings into a multilayer stack and DBR regions adjacent to the etched openings;
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
FIG. 8 shows measured reflectance from a GaN DBR having nanoporous gallium- 25 nitride layers; and
FIG. 9 shows measured reflectance greater than 99% from a GaN DBR having nanoporous gallium-nitride layers. The features and advantages of the embodiments will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A porous gallium-nitride layer having a majority of its pores with a maximum transverse width less than approximately 100 nm and having a volumetric porosity greater than 10%, wherein an n-type doping density of the porous gallium-nitride layer is between approximately 5x10 19 cm- 3 and approximately 2x10 ° cm 3 wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The porous gallium-nitride layer of claim 1, wherein over half of the pores of the gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Original
The porous gallium-nitride layer of claim 1, wherein the pores have walls with a root-mean-square surface roughness less than approximately 10 nm. Original
The porous gallium-nitride layer of claim 1, wherein the volumetric porosity is greater than 60%. Previously presented
The porous gallium-nitride layer of claim 1 included in an electrode. Previously presented
Canceled
Canceled
6-7. Canceled
Canceled
9-11. Canceled
Canceled
(Withdrawn-Currently amended) A semiconductor light emitting device comprising: at least one buried porous gallium-nitride layer wherein a majority of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width less than approximately 100 nm and the at least one buried porous gallium-nitride layer has a volumetric porosity greater than 10%, wherein the at least one buried porous gallium-nitride layer has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³ wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The semiconductor light emitting device of claim 13, wherein over 70% of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Withdrawn
The semiconductor light emitting device of claim 13, wherein the at least one buried porous gallium-nitride layer comprises a plurality of porous galliu m -nitride layers separated by nonporous gallium-nitride layers a rr anged in a first distributed Bragg reflector (DBR). Withdrawn
The semiconductor light emitting device of claim 13, wherein the pores of the at least one buried porous gallium-nitride layer have walls with a root-mean-square surface roughness less than approximately 10 nm. Withdrawn
The semiconductor light emitting device of clai m 15, wherein the plurality of porous gallium-nitride layers include non-porous regions located centrally within the DBR that form a pillar of non-porous gallium nitride. Withdrawn
20-22. Canceled
Canceled
Canceled
The semiconductor light emitting device of claim 25, wherein a dopant for the n- type doping in the at least one buried porous gallium-nitride layer is germanium. Withdrawn
A method for forming porous gallium nitride, the method comprising: exposing heavily-doped gallium nitride to an etchant, wherein the heavily-doped gallium nitride has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³; applying an electrical bias between the etchant and the heavily-doped gallium nitride, wherein the electrical bias has a value between approximately 1.3 volts and 3 volts; and electrochemically etching the heavily-doped gallium nitride to produce porous gallium nitride having a volumetric porosity greater than approximately 10% and a majority of pores with a maximum transverse width less than approximately 100 nm. Previously presented
The method of claim 27, wherein a dopant for the heavily-doped gallium nitride is ger manium. Original
The method of claim 27, wherein the etchant is nitric acid having a concentration between 60% and approximately 80% by weight. Previously presented
The method of claim 27, wherein the electrochemical etching comprises forming a distributed Bragg reflector (DBR), the method further comprising spreading etching current during the electrochemical etching with a current-spreading layer of doped gallium nitride located adjacent to the DBR. Previously presented
The method of claim 27, wherein the heavily-doped gallium nitride is arr anged in a pl u rality of layers that are separated by undoped or moderately-doped gallium-nitride layers. the method f u rther comprising etching via s into the plurality of layers and the undoped or moderately-doped gallium-nitride layers to expose edges of the plurality of layers, wherein the electrochemical etching comprises lateral etching of the plurality of layers. Previously presented
The method of claim 27, wherein the pores comprise lateral pores. Currently amended
The method of claim 27, wherein the pores adjacent, vertically-spaced rows of lateral pores. comprise lateral pores arranged in at least two Currently amended
28-29. Canceled
Canceled
32-33. Canceled
Canceled
36-40. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device with buried porous GaN layer
distributed Bragg reflector (DBR) with porous/nonporous GaN layers
electrode incorporating porous GaN
Materials described outside the worked examples.
porous gallium nitride
GaN
nitric acid etchant
HNO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volumetric porosity of porous GaN (claim lower bound) | >10% | GaN |
volumetric porosity of porous GaN (high porosity dependent claim) | >60% |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,043,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified depiction of a vertical cavity surface-emitting laser (VCSEL), Y0087.70094US01-6-5304290 according to some embodiments;
FIG. 2 depicts a distributed Bragg reflector that includes porous layers, according to some embodiments;
FIG. 3 illustrates etching characteristics of GaN under various etching conditions; 5
FIG. 4C shows a third pore morphology obtained when etching germanium-doped 10 GaN under third etching conditions;
FIG. 5A depicts a multilayer structure that may be used to form a high-reflective, n- side DBR, according to some embodiments; 15
FIG. 6 is an optical micrograph showing etched openings into a multilayer stack and DBR regions adjacent to the etched openings;
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
FIG. 8 shows measured reflectance from a GaN DBR having nanoporous gallium- 25 nitride layers; and
FIG. 9 shows measured reflectance greater than 99% from a GaN DBR having nanoporous gallium-nitride layers. The features and advantages of the embodiments will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A porous gallium-nitride layer having a majority of its pores with a maximum transverse width less than approximately 100 nm and having a volumetric porosity greater than 10%, wherein an n-type doping density of the porous gallium-nitride layer is between approximately 5x10 19 cm- 3 and approximately 2x10 ° cm 3 wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The porous gallium-nitride layer of claim 1, wherein over half of the pores of the gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Original
The porous gallium-nitride layer of claim 1, wherein the pores have walls with a root-mean-square surface roughness less than approximately 10 nm. Original
The porous gallium-nitride layer of claim 1, wherein the volumetric porosity is greater than 60%. Previously presented
The porous gallium-nitride layer of claim 1 included in an electrode. Previously presented
Canceled
Canceled
6-7. Canceled
Canceled
9-11. Canceled
Canceled
(Withdrawn-Currently amended) A semiconductor light emitting device comprising: at least one buried porous gallium-nitride layer wherein a majority of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width less than approximately 100 nm and the at least one buried porous gallium-nitride layer has a volumetric porosity greater than 10%, wherein the at least one buried porous gallium-nitride layer has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³ wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The semiconductor light emitting device of claim 13, wherein over 70% of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Withdrawn
The semiconductor light emitting device of claim 13, wherein the at least one buried porous gallium-nitride layer comprises a plurality of porous galliu m -nitride layers separated by nonporous gallium-nitride layers a rr anged in a first distributed Bragg reflector (DBR). Withdrawn
The semiconductor light emitting device of claim 13, wherein the pores of the at least one buried porous gallium-nitride layer have walls with a root-mean-square surface roughness less than approximately 10 nm. Withdrawn
The semiconductor light emitting device of clai m 15, wherein the plurality of porous gallium-nitride layers include non-porous regions located centrally within the DBR that form a pillar of non-porous gallium nitride. Withdrawn
20-22. Canceled
Canceled
Canceled
The semiconductor light emitting device of claim 25, wherein a dopant for the n- type doping in the at least one buried porous gallium-nitride layer is germanium. Withdrawn
A method for forming porous gallium nitride, the method comprising: exposing heavily-doped gallium nitride to an etchant, wherein the heavily-doped gallium nitride has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³; applying an electrical bias between the etchant and the heavily-doped gallium nitride, wherein the electrical bias has a value between approximately 1.3 volts and 3 volts; and electrochemically etching the heavily-doped gallium nitride to produce porous gallium nitride having a volumetric porosity greater than approximately 10% and a majority of pores with a maximum transverse width less than approximately 100 nm. Previously presented
The method of claim 27, wherein a dopant for the heavily-doped gallium nitride is ger manium. Original
The method of claim 27, wherein the etchant is nitric acid having a concentration between 60% and approximately 80% by weight. Previously presented
The method of claim 27, wherein the electrochemical etching comprises forming a distributed Bragg reflector (DBR), the method further comprising spreading etching current during the electrochemical etching with a current-spreading layer of doped gallium nitride located adjacent to the DBR. Previously presented
The method of claim 27, wherein the heavily-doped gallium nitride is arr anged in a pl u rality of layers that are separated by undoped or moderately-doped gallium-nitride layers. the method f u rther comprising etching via s into the plurality of layers and the undoped or moderately-doped gallium-nitride layers to expose edges of the plurality of layers, wherein the electrochemical etching comprises lateral etching of the plurality of layers. Previously presented
The method of claim 27, wherein the pores comprise lateral pores. Currently amended
The method of claim 27, wherein the pores adjacent, vertically-spaced rows of lateral pores. comprise lateral pores arranged in at least two Currently amended
28-29. Canceled
Canceled
32-33. Canceled
Canceled
36-40. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device with buried porous GaN layer
distributed Bragg reflector (DBR) with porous/nonporous GaN layers
electrode incorporating porous GaN
Materials described outside the worked examples.
porous gallium nitride
GaN
nitric acid etchant
HNO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volumetric porosity of porous GaN (claim lower bound) | >10% | GaN |
volumetric porosity of porous GaN (high porosity dependent claim) | >60% |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,043,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified depiction of a vertical cavity surface-emitting laser (VCSEL), Y0087.70094US01-6-5304290 according to some embodiments;
FIG. 2 depicts a distributed Bragg reflector that includes porous layers, according to some embodiments;
FIG. 3 illustrates etching characteristics of GaN under various etching conditions; 5
FIG. 4C shows a third pore morphology obtained when etching germanium-doped 10 GaN under third etching conditions;
FIG. 5A depicts a multilayer structure that may be used to form a high-reflective, n- side DBR, according to some embodiments; 15
FIG. 6 is an optical micrograph showing etched openings into a multilayer stack and DBR regions adjacent to the etched openings;
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
FIG. 8 shows measured reflectance from a GaN DBR having nanoporous gallium- 25 nitride layers; and
FIG. 9 shows measured reflectance greater than 99% from a GaN DBR having nanoporous gallium-nitride layers. The features and advantages of the embodiments will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A porous gallium-nitride layer having a majority of its pores with a maximum transverse width less than approximately 100 nm and having a volumetric porosity greater than 10%, wherein an n-type doping density of the porous gallium-nitride layer is between approximately 5x10 19 cm- 3 and approximately 2x10 ° cm 3 wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The porous gallium-nitride layer of claim 1, wherein over half of the pores of the gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Original
The porous gallium-nitride layer of claim 1, wherein the pores have walls with a root-mean-square surface roughness less than approximately 10 nm. Original
The porous gallium-nitride layer of claim 1, wherein the volumetric porosity is greater than 60%. Previously presented
The porous gallium-nitride layer of claim 1 included in an electrode. Previously presented
Canceled
Canceled
6-7. Canceled
Canceled
9-11. Canceled
Canceled
(Withdrawn-Currently amended) A semiconductor light emitting device comprising: at least one buried porous gallium-nitride layer wherein a majority of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width less than approximately 100 nm and the at least one buried porous gallium-nitride layer has a volumetric porosity greater than 10%, wherein the at least one buried porous gallium-nitride layer has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³ wherein the pores comprise lateral pores arranged in at least two adjacent, vertically-spaced rows of lateral pores. Currently amended
The semiconductor light emitting device of claim 13, wherein over 70% of the pores of the at least one buried porous gallium-nitride layer have a maximum transverse width between approximately 30 nm and approximately 90 nm. Withdrawn
The semiconductor light emitting device of claim 13, wherein the at least one buried porous gallium-nitride layer comprises a plurality of porous galliu m -nitride layers separated by nonporous gallium-nitride layers a rr anged in a first distributed Bragg reflector (DBR). Withdrawn
The semiconductor light emitting device of claim 13, wherein the pores of the at least one buried porous gallium-nitride layer have walls with a root-mean-square surface roughness less than approximately 10 nm. Withdrawn
The semiconductor light emitting device of clai m 15, wherein the plurality of porous gallium-nitride layers include non-porous regions located centrally within the DBR that form a pillar of non-porous gallium nitride. Withdrawn
20-22. Canceled
Canceled
Canceled
The semiconductor light emitting device of claim 25, wherein a dopant for the n- type doping in the at least one buried porous gallium-nitride layer is germanium. Withdrawn
A method for forming porous gallium nitride, the method comprising: exposing heavily-doped gallium nitride to an etchant, wherein the heavily-doped gallium nitride has an n-type doping density between approximately 5x10 19 cm- 3 and approximately 2x10 20 cm⁻³; applying an electrical bias between the etchant and the heavily-doped gallium nitride, wherein the electrical bias has a value between approximately 1.3 volts and 3 volts; and electrochemically etching the heavily-doped gallium nitride to produce porous gallium nitride having a volumetric porosity greater than approximately 10% and a majority of pores with a maximum transverse width less than approximately 100 nm. Previously presented
The method of claim 27, wherein a dopant for the heavily-doped gallium nitride is ger manium. Original
The method of claim 27, wherein the etchant is nitric acid having a concentration between 60% and approximately 80% by weight. Previously presented
The method of claim 27, wherein the electrochemical etching comprises forming a distributed Bragg reflector (DBR), the method further comprising spreading etching current during the electrochemical etching with a current-spreading layer of doped gallium nitride located adjacent to the DBR. Previously presented
The method of claim 27, wherein the heavily-doped gallium nitride is arr anged in a pl u rality of layers that are separated by undoped or moderately-doped gallium-nitride layers. the method f u rther comprising etching via s into the plurality of layers and the undoped or moderately-doped gallium-nitride layers to expose edges of the plurality of layers, wherein the electrochemical etching comprises lateral etching of the plurality of layers. Previously presented
The method of claim 27, wherein the pores comprise lateral pores. Currently amended
The method of claim 27, wherein the pores adjacent, vertically-spaced rows of lateral pores. comprise lateral pores arranged in at least two Currently amended
28-29. Canceled
Canceled
32-33. Canceled
Canceled
36-40. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device with buried porous GaN layer
distributed Bragg reflector (DBR) with porous/nonporous GaN layers
electrode incorporating porous GaN
Materials described outside the worked examples.
porous gallium nitride
GaN
nitric acid etchant
HNO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a scanning-electron micrograph (SEM) showing pore morphology of EC- etched gallium- nitride layers in a DBR structure, according to some embodiments;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volumetric porosity of porous GaN (claim lower bound) | >10% | GaN |
volumetric porosity of porous GaN (high porosity dependent claim) | >60% |
Related documents with shared materials, methods, properties, or citations.
vertical-cavity surface-emitting laser (VCSEL) with porous GaN DBR
majority of pores maximum transverse width | ≤ 1 nm | GaN |
over half of pores maximum transverse width range | 30–90 nm | GaN |
pore wall RMS surface roughness | ≤ 10 nm | GaN |
first DBR reflectance at lasing wavelength | >99% | — |
first DBR reflectance >98% bandwidth | ≥ 20 nm | — |
Thickness | 30–90 nm | — |
Thickness | ≤ 1 nm | — |
Voltage | 2–3 V | — |
Voltage | 1.3–3 V | — |
Thickness | 250–750 nm | — |
Thickness | 40–60 nm | — |
Thickness | 50–400 nm | — |
Duration | 2–30 minutes | — |
Thickness | 400–490 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 150 nm | — |
Thickness | ≥ 20 nm | — |
vertical-cavity surface-emitting laser (VCSEL) with porous GaN DBR
majority of pores maximum transverse width | ≤ 1 nm | GaN |
over half of pores maximum transverse width range | 30–90 nm | GaN |
pore wall RMS surface roughness | ≤ 10 nm | GaN |
first DBR reflectance at lasing wavelength | >99% | — |
first DBR reflectance >98% bandwidth | ≥ 20 nm | — |
Thickness | 30–90 nm | — |
Thickness | ≤ 1 nm | — |
Voltage | 2–3 V | — |
Voltage | 1.3–3 V | — |
Thickness | 250–750 nm | — |
Thickness | 40–60 nm | — |
Thickness | 50–400 nm | — |
Duration | 2–30 minutes | — |
Thickness | 400–490 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 150 nm | — |
Thickness | ≥ 20 nm | — |
vertical-cavity surface-emitting laser (VCSEL) with porous GaN DBR
majority of pores maximum transverse width | ≤ 1 nm | GaN |
over half of pores maximum transverse width range | 30–90 nm | GaN |
pore wall RMS surface roughness | ≤ 10 nm | GaN |
first DBR reflectance at lasing wavelength | >99% | — |
first DBR reflectance >98% bandwidth | ≥ 20 nm | — |
Thickness | 30–90 nm | — |
Thickness | ≤ 1 nm | — |
Voltage | 2–3 V | — |
Voltage | 1.3–3 V | — |
Thickness | 250–750 nm | — |
Thickness | 40–60 nm | — |
Thickness | 50–400 nm | — |
Duration | 2–30 minutes | — |
Thickness | 400–490 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 150 nm | — |
Thickness | ≥ 20 nm | — |
vertical-cavity surface-emitting laser (VCSEL) with porous GaN DBR
majority of pores maximum transverse width | ≤ 1 nm | GaN |
over half of pores maximum transverse width range | 30–90 nm | GaN |
pore wall RMS surface roughness | ≤ 10 nm | GaN |
first DBR reflectance at lasing wavelength | >99% | — |
first DBR reflectance >98% bandwidth | ≥ 20 nm | — |
Thickness | 30–90 nm | — |
Thickness | ≤ 1 nm | — |
Voltage | 2–3 V | — |
Voltage | 1.3–3 V | — |
Thickness | 250–750 nm | — |
Thickness | 40–60 nm | — |
Thickness | 50–400 nm | — |
Duration | 2–30 minutes | — |
Thickness | 400–490 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 150 nm | — |
Thickness | ≥ 20 nm | — |