Research paperExperimental GrowthExperimental CharacterizationComputational DFTCreating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in PotentialMadisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino et al.2022·10.48550/arxiv.2208.04532·arXiv:2208.04532AbstractThe ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe₂ by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe₂ monolayer to create a large built-in potential of 0.83 ± 0.06 eV. Scanning tunneling spectroscopy maps the nanoscale depletion region and shows that Se intercalation modifies the dielectric environment, increasing the MoSe₂ band gap by ~0.26 eV.Read more
Epitaxial hBN monolayer on Ru(0001) before Se intercalation, showing the corrugated nanomesh superstructure.1 preparation1 characterization1 figureExperimentalBNStudied MaterialRuSubstrate / DielectricExpand
hBN/Ru region after Se intercalation at the hBN/Ru interface, with a flattened surface morphology and modified work function.1 preparation2 characterizations1 property2 figuresExperimentalBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
MoSe₂ monolayer grown on hBN/Ru, in the corrugated/unintercalated region.1 preparation2 characterizations1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricExpand
MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat region where Se decouples hBN from Ru.1 preparation3 characterizations3 properties1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure with Se at HCP hollow sites.2 propertiesSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Ru(0001) reference heterostructure without Se intercalation.No measurements recordedSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricExpand
DFT-modeled Se adsorption on Ru(0001) used to identify preferred adsorption site and coverage.No measurements recordedSimulated Supercell DftSePrecursorRuSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCreating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in PotentialMadisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino et al.2022·10.48550/arxiv.2208.04532·arXiv:2208.04532AbstractThe ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe₂ by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe₂ monolayer to create a large built-in potential of 0.83 ± 0.06 eV. Scanning tunneling spectroscopy maps the nanoscale depletion region and shows that Se intercalation modifies the dielectric environment, increasing the MoSe₂ band gap by ~0.26 eV.Read more
Epitaxial hBN monolayer on Ru(0001) before Se intercalation, showing the corrugated nanomesh superstructure.1 preparation1 characterization1 figureExperimentalBNStudied MaterialRuSubstrate / DielectricExpand
hBN/Ru region after Se intercalation at the hBN/Ru interface, with a flattened surface morphology and modified work function.1 preparation2 characterizations1 property2 figuresExperimentalBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
MoSe₂ monolayer grown on hBN/Ru, in the corrugated/unintercalated region.1 preparation2 characterizations1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricExpand
MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat region where Se decouples hBN from Ru.1 preparation3 characterizations3 properties1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure with Se at HCP hollow sites.2 propertiesSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Ru(0001) reference heterostructure without Se intercalation.No measurements recordedSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricExpand
DFT-modeled Se adsorption on Ru(0001) used to identify preferred adsorption site and coverage.No measurements recordedSimulated Supercell DftSePrecursorRuSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCreating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in PotentialMadisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino et al.2022·10.48550/arxiv.2208.04532·arXiv:2208.04532AbstractThe ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe₂ by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe₂ monolayer to create a large built-in potential of 0.83 ± 0.06 eV. Scanning tunneling spectroscopy maps the nanoscale depletion region and shows that Se intercalation modifies the dielectric environment, increasing the MoSe₂ band gap by ~0.26 eV.Read more
Epitaxial hBN monolayer on Ru(0001) before Se intercalation, showing the corrugated nanomesh superstructure.1 preparation1 characterization1 figureExperimentalBNStudied MaterialRuSubstrate / DielectricExpand
hBN/Ru region after Se intercalation at the hBN/Ru interface, with a flattened surface morphology and modified work function.1 preparation2 characterizations1 property2 figuresExperimentalBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
MoSe₂ monolayer grown on hBN/Ru, in the corrugated/unintercalated region.1 preparation2 characterizations1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricExpand
MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat region where Se decouples hBN from Ru.1 preparation3 characterizations3 properties1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure with Se at HCP hollow sites.2 propertiesSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Ru(0001) reference heterostructure without Se intercalation.No measurements recordedSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricExpand
DFT-modeled Se adsorption on Ru(0001) used to identify preferred adsorption site and coverage.No measurements recordedSimulated Supercell DftSePrecursorRuSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCreating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in PotentialMadisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino et al.2022·10.48550/arxiv.2208.04532·arXiv:2208.04532AbstractThe ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe₂ by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe₂ monolayer to create a large built-in potential of 0.83 ± 0.06 eV. Scanning tunneling spectroscopy maps the nanoscale depletion region and shows that Se intercalation modifies the dielectric environment, increasing the MoSe₂ band gap by ~0.26 eV.Read more
Epitaxial hBN monolayer on Ru(0001) before Se intercalation, showing the corrugated nanomesh superstructure.1 preparation1 characterization1 figureExperimentalBNStudied MaterialRuSubstrate / DielectricExpand
hBN/Ru region after Se intercalation at the hBN/Ru interface, with a flattened surface morphology and modified work function.1 preparation2 characterizations1 property2 figuresExperimentalBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
MoSe₂ monolayer grown on hBN/Ru, in the corrugated/unintercalated region.1 preparation2 characterizations1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricExpand
MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat region where Se decouples hBN from Ru.1 preparation3 characterizations3 properties1 figureExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure with Se at HCP hollow sites.2 propertiesSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricSePrecursorExpand
DFT-modeled hBN/Ru(0001) reference heterostructure without Se intercalation.No measurements recordedSimulated Supercell DftBNStudied MaterialRuSubstrate / DielectricExpand
DFT-modeled Se adsorption on Ru(0001) used to identify preferred adsorption site and coverage.No measurements recordedSimulated Supercell DftSePrecursorRuSubstrate / DielectricExpand