Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Madisen Holbrook; Yuxuan Chen; Hyunsue Kim; Lisa Frammolino; Mengke Liu; Chi-Ruei Pan; Mei-Yin Chou; Chengdong Zhang; Chih-Kang Shih

doi:10.48550/arxiv.2208.04532

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Madisen Holbrook, Yuxuan Chen, Hyunsue Kim, Lisa Frammolino et al.

2022·10.48550/arxiv.2208.04532·arXiv:2208.04532

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial hBN monolayer on Ru(0001) before Se intercalation, showing the corrugated nanomesh superstructure.

1 preparation1 characterization1 figure

ExperimentalBNStudied MaterialRuSubstrate / Dielectric

hBN/Ru region after Se intercalation at the hBN/Ru interface, with a flattened surface morphology and modified work function.

1 preparation2 characterizations1 property2 figures

ExperimentalBNStudied MaterialRuSubstrate / DielectricSePrecursor

MoSe₂ monolayer grown on hBN/Ru, in the corrugated/unintercalated region.

1 preparation2 characterizations1 figure

ExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / Dielectric

MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat region where Se decouples hBN from Ru.

1 preparation3 characterizations3 properties1 figure

ExperimentalMoSe₂Studied MaterialBNStudied MaterialRuSubstrate / DielectricSePrecursor

DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure with Se at HCP hollow sites.

2 properties

Simulated Supercell DftBNStudied MaterialRuSubstrate / DielectricSePrecursor

DFT-modeled hBN/Ru(0001) reference heterostructure without Se intercalation.

No measurements recorded

Simulated Supercell DftBNStudied MaterialRuSubstrate / Dielectric

DFT-modeled Se adsorption on Ru(0001) used to identify preferred adsorption site and coverage.

No measurements recorded

Simulated Supercell DftSePrecursorRuSubstrate / Dielectric

Materials

MoSe₂

Studied Material

Also known as

MoSe₂ monolayer

studied material

hBN

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	0.85eV	BN Ru Se	hBN/Ru region after Se intercalation at the hBN/Ru interface		—
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	1.1eV	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Lattice Constant	MoSe₂ lattice constant	0.33nm	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Built In Potential	lateral heterojunction built-in potential	0.83eV	MoSe₂ BN Ru Se	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Band Gap Change	MoSe₂ band gap increase	0.26eV	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Interlayer Distance Change	average interlayer distance increase upon Se intercalation	1.9angstrom	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Optical Band Gap	band gap	0.26eV	—	—	—	—
Optical Band Gap	band gap	1.94eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	0.85eV	BN Ru Se	hBN/Ru region after Se intercalation at the hBN/Ru interface		—
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	1.1eV	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Lattice Constant	MoSe₂ lattice constant	0.33nm	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Built In Potential	lateral heterojunction built-in potential	0.83eV	MoSe₂ BN Ru Se	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Band Gap Change	MoSe₂ band gap increase	0.26eV	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Interlayer Distance Change	average interlayer distance increase upon Se intercalation	1.9angstrom	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Optical Band Gap	band gap	0.26eV	—	—	—	—
Optical Band Gap	band gap	1.94eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	0.85eV	BN Ru Se	hBN/Ru region after Se intercalation at the hBN/Ru interface		—
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	1.1eV	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Lattice Constant	MoSe₂ lattice constant	0.33nm	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Built In Potential	lateral heterojunction built-in potential	0.83eV	MoSe₂ BN Ru Se	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Band Gap Change	MoSe₂ band gap increase	0.26eV	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Interlayer Distance Change	average interlayer distance increase upon Se intercalation	1.9angstrom	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Optical Band Gap	band gap	0.26eV	—	—	—	—
Optical Band Gap	band gap	1.94eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	0.85eV	BN Ru Se	hBN/Ru region after Se intercalation at the hBN/Ru interface		—
Substrate Work Function Change	hBN/Ru work function increase after Se intercalation	1.1eV	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Lattice Constant	MoSe₂ lattice constant	0.33nm	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Built In Potential	lateral heterojunction built-in potential	0.83eV	MoSe₂ BN Ru Se	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Band Gap Change	MoSe₂ band gap increase	0.26eV	MoSe₂	MoSe₂ monolayer grown on Se-intercalated hBN/Ru, in the flat		—
Interlayer Distance Change	average interlayer distance increase upon Se intercalation	1.9angstrom	BN Ru Se	DFT-modeled hBN/Se/Ru(0001) intercalated heterostructure wit		—
Optical Band Gap	band gap	0.26eV	—	—	—	—
Optical Band Gap	band gap	1.94eV	—	—	—	—