Coherent imaging and dynamics of excitons in MoSe2 monolayers epitaxially grown on hexagonal boron nitride

Paper details

Research paper

Experimental GrowthExperimental Characterization

Coherent imaging and dynamics of excitons in MoSe₂ monolayers epitaxially grown on hexagonal boron nitride

Karolina Ewa Połczyńska, Simon Le Denmat, Takashi Taniguchi, Kenji Watanabe et al.

Journal Name·2023·10.48550/arxiv.2303.10697·arXiv:2303.10697

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation4 characterizations9 properties5 figures

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

MoSe₂

Studied Material

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Also known as

hBN

Related documents with shared materials, methods, properties, or citations.

Coherent imaging and dynamics of excitons in MoSe2 monolayers epitaxially grown on hexagonal boron nitride | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Substrate Feature Size	typical MoSe₂ monolayer flake size on hBN	100nm	hBN	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	exciton	11.8meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	trion	30.4meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	exciton	3meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	trion	7.7 ± 0.2meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Coherence Time	local-field effect coherence time	0.1ps	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Activation Energy	optical phonon activation energy	35meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Position	exciton peak position	1652.5meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Distribution Fwhm	exciton peak position across flake	0.87meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
PL Peak	regex-detected PL peak	532nm	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	10meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	11.8meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	0.87meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	6.6meV	MoSe₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Feature Size	typical MoSe₂ monolayer flake size on hBN	100nm	hBN	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	exciton	11.8meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	trion	30.4meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	exciton	3meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	trion	7.7 ± 0.2meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Coherence Time	local-field effect coherence time	0.1ps	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Activation Energy	optical phonon activation energy	35meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Position	exciton peak position	1652.5meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Distribution Fwhm	exciton peak position across flake	0.87meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
PL Peak	regex-detected PL peak	532nm	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	10meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	11.8meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	0.87meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	6.6meV	MoSe₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Feature Size	typical MoSe₂ monolayer flake size on hBN	100nm	hBN	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	exciton	11.8meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	trion	30.4meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	exciton	3meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	trion	7.7 ± 0.2meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Coherence Time	local-field effect coherence time	0.1ps	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Activation Energy	optical phonon activation energy	35meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Position	exciton peak position	1652.5meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Distribution Fwhm	exciton peak position across flake	0.87meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
PL Peak	regex-detected PL peak	532nm	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	10meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	11.8meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	0.87meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	6.6meV	MoSe₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Feature Size	typical MoSe₂ monolayer flake size on hBN	100nm	hBN	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	exciton	11.8meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Inhomogeneous Broadening	trion	30.4meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	exciton	3meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Homogeneous Linewidth	trion	7.7 ± 0.2meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Coherence Time	local-field effect coherence time	0.1ps	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Activation Energy	optical phonon activation energy	35meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Position	exciton peak position	1652.5meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
Peak Distribution Fwhm	exciton peak position across flake	0.87meV	MoSe₂	Epitaxially grown MoSe₂ monolayer on thin hBN flake deposite		—
PL Peak	regex-detected PL peak	532nm	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	10meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	11.8meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	0.87meV	MoSe₂	—	—	—
Pl Peak Fwhm	PL peak	6.6meV	MoSe₂	—	—	—