Research paperExperimental GrowthExperimental CharacterizationCoherent imaging and dynamics of excitons in MoSe₂ monolayers epitaxially grown on hexagonal boron nitrideKarolina Ewa Połczyńska, Simon Le Denmat, Takashi Taniguchi, Kenji Watanabe et al.Journal Name·2023·10.48550/arxiv.2303.10697·arXiv:2303.10697AbstractUsing four-wave mixing microscopy, we measure the coherent response and ultrafast dynamics of excitons and trions in MoSe₂ monolayers grown by molecular beam epitaxy on thin films of hexagonal boron nitride. We assess inhomogeneous and homogeneous broadenings in the transition spectral lineshape. The impact of phonons on the homogeneous dephasing is inferred via the temperature dependence of the dephasing. Four-wave mixing mapping, combined with atomic force microscopy, reveals spatial correlations between exciton oscillator strength, inhomogeneous broadening and the sample morphology.Read more
Epitaxially grown MoSe₂ monolayer on thin hBN flake deposited on SiO₂/Si substrate.1 preparation4 characterizations9 properties5 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationCoherent imaging and dynamics of excitons in MoSe₂ monolayers epitaxially grown on hexagonal boron nitrideKarolina Ewa Połczyńska, Simon Le Denmat, Takashi Taniguchi, Kenji Watanabe et al.Journal Name·2023·10.48550/arxiv.2303.10697·arXiv:2303.10697AbstractUsing four-wave mixing microscopy, we measure the coherent response and ultrafast dynamics of excitons and trions in MoSe₂ monolayers grown by molecular beam epitaxy on thin films of hexagonal boron nitride. We assess inhomogeneous and homogeneous broadenings in the transition spectral lineshape. The impact of phonons on the homogeneous dephasing is inferred via the temperature dependence of the dephasing. Four-wave mixing mapping, combined with atomic force microscopy, reveals spatial correlations between exciton oscillator strength, inhomogeneous broadening and the sample morphology.Read more
Epitaxially grown MoSe₂ monolayer on thin hBN flake deposited on SiO₂/Si substrate.1 preparation4 characterizations9 properties5 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationCoherent imaging and dynamics of excitons in MoSe₂ monolayers epitaxially grown on hexagonal boron nitrideKarolina Ewa Połczyńska, Simon Le Denmat, Takashi Taniguchi, Kenji Watanabe et al.Journal Name·2023·10.48550/arxiv.2303.10697·arXiv:2303.10697AbstractUsing four-wave mixing microscopy, we measure the coherent response and ultrafast dynamics of excitons and trions in MoSe₂ monolayers grown by molecular beam epitaxy on thin films of hexagonal boron nitride. We assess inhomogeneous and homogeneous broadenings in the transition spectral lineshape. The impact of phonons on the homogeneous dephasing is inferred via the temperature dependence of the dephasing. Four-wave mixing mapping, combined with atomic force microscopy, reveals spatial correlations between exciton oscillator strength, inhomogeneous broadening and the sample morphology.Read more
Epitaxially grown MoSe₂ monolayer on thin hBN flake deposited on SiO₂/Si substrate.1 preparation4 characterizations9 properties5 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationCoherent imaging and dynamics of excitons in MoSe₂ monolayers epitaxially grown on hexagonal boron nitrideKarolina Ewa Połczyńska, Simon Le Denmat, Takashi Taniguchi, Kenji Watanabe et al.Journal Name·2023·10.48550/arxiv.2303.10697·arXiv:2303.10697AbstractUsing four-wave mixing microscopy, we measure the coherent response and ultrafast dynamics of excitons and trions in MoSe₂ monolayers grown by molecular beam epitaxy on thin films of hexagonal boron nitride. We assess inhomogeneous and homogeneous broadenings in the transition spectral lineshape. The impact of phonons on the homogeneous dephasing is inferred via the temperature dependence of the dephasing. Four-wave mixing mapping, combined with atomic force microscopy, reveals spatial correlations between exciton oscillator strength, inhomogeneous broadening and the sample morphology.Read more
Epitaxially grown MoSe₂ monolayer on thin hBN flake deposited on SiO₂/Si substrate.1 preparation4 characterizations9 properties5 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand