A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a base region doped with second conductive type impurities, the base region being formed in the GaN layer and electrically connected to the first electrode; and an emitter region doped with first conductive type impurities, the emitter region being formed in the base region and electrically connected to a third electrode which is formed on the third surface; 4 U.S.S.N. 13/436,665 wherein the first electrode, the semiconductor layer, the third electrode, the conductive array, and the second electrode form a vertical bipolar junction transistor (BJT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a body region doped with second conductive type impurities, the body region being formed in the GaN layer and electrically connected to the first electrode; an emitter region doped with first conductive type impurities, the emitter region being formed in the body region and electrically connected to the first electrode; and 5 U.S.S.N. 13/436,665 an injection region doped with second conductive type impurities, the injection region being formed between the GaN layer and the substrate, and being electrically connected to the second electrode by the conductive array; and the vertical semiconductor device further includes: a dielectric layer formed on the third surface; and a gate formed on the dielectric layer; wherein the first electrode, the semiconductor layer, the conductive array, the second electrode, the dielectric layer, and the gate form a vertical insulated gate bipolar transistor (IGBT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a base region doped with second conductive type impurities, the base region being formed in the GaN layer and electrically connected to the first electrode; and an emitter region doped with first conductive type impurities, the emitter region being formed in the base region and electrically connected to a third electrode which is formed on the third surface; 4 U.S.S.N. 13/436,665 wherein the first electrode, the semiconductor layer, the third electrode, the conductive array, and the second electrode form a vertical bipolar junction transistor (BJT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a body region doped with second conductive type impurities, the body region being formed in the GaN layer and electrically connected to the first electrode; an emitter region doped with first conductive type impurities, the emitter region being formed in the body region and electrically connected to the first electrode; and 5 U.S.S.N. 13/436,665 an injection region doped with second conductive type impurities, the injection region being formed between the GaN layer and the substrate, and being electrically connected to the second electrode by the conductive array; and the vertical semiconductor device further includes: a dielectric layer formed on the third surface; and a gate formed on the dielectric layer; wherein the first electrode, the semiconductor layer, the conductive array, the second electrode, the dielectric layer, and the gate form a vertical insulated gate bipolar transistor (IGBT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a base region doped with second conductive type impurities, the base region being formed in the GaN layer and electrically connected to the first electrode; and an emitter region doped with first conductive type impurities, the emitter region being formed in the base region and electrically connected to a third electrode which is formed on the third surface; 4 U.S.S.N. 13/436,665 wherein the first electrode, the semiconductor layer, the third electrode, the conductive array, and the second electrode form a vertical bipolar junction transistor (BJT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a body region doped with second conductive type impurities, the body region being formed in the GaN layer and electrically connected to the first electrode; an emitter region doped with first conductive type impurities, the emitter region being formed in the body region and electrically connected to the first electrode; and 5 U.S.S.N. 13/436,665 an injection region doped with second conductive type impurities, the injection region being formed between the GaN layer and the substrate, and being electrically connected to the second electrode by the conductive array; and the vertical semiconductor device further includes: a dielectric layer formed on the third surface; and a gate formed on the dielectric layer; wherein the first electrode, the semiconductor layer, the conductive array, the second electrode, the dielectric layer, and the gate form a vertical insulated gate bipolar transistor (IGBT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a base region doped with second conductive type impurities, the base region being formed in the GaN layer and electrically connected to the first electrode; and an emitter region doped with first conductive type impurities, the emitter region being formed in the base region and electrically connected to a third electrode which is formed on the third surface; 4 U.S.S.N. 13/436,665 wherein the first electrode, the semiconductor layer, the third electrode, the conductive array, and the second electrode form a vertical bipolar junction transistor (BJT).

A vertical semiconductor device, comprising: a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, The vertical somiconductor device of claim 2, wher e in the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a body region doped with second conductive type impurities, the body region being formed in the GaN layer and electrically connected to the first electrode; an emitter region doped with first conductive type impurities, the emitter region being formed in the body region and electrically connected to the first electrode; and 5 U.S.S.N. 13/436,665 an injection region doped with second conductive type impurities, the injection region being formed between the GaN layer and the substrate, and being electrically connected to the second electrode by the conductive array; and the vertical semiconductor device further includes: a dielectric layer formed on the third surface; and a gate formed on the dielectric layer; wherein the first electrode, the semiconductor layer, the conductive array, the second electrode, the dielectric layer, and the gate form a vertical insulated gate bipolar transistor (IGBT).