Patent
US 10,777,673ASYMMETRICAL BLOCKING BIDIRECTIONAL GALLIUM NITRIDE SWITCH
David Sheridan
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,777,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer; a first source/drain electrode and a second source/drain electrode disposed on two opposite edges as two vertical blocks extendir; upwardly to about a same height from a top surface of the hetero-junction structure; the first source/drain electrode further includes a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode with a first gate disposed on the top surface of the hetero-junction structure underneath the first field plate; and the second source/drain electrode further includes a second field plate extending horizontally from a top portion o f the second source/drain electrode toward the first source/drain electrode with a second gate disposed on the top surface of the hetero-junction structure underneath the second field plate wherein the first field plate and the second field plate are extended along substantially a same vertical level but have two different sizes. Currently amended
The HEMT GaN bidirectional blocking de i ce of claim 1 wherein: the first field plate has a length represented by L SD-FP 1 and the second field plate has a length represented by L SD-FP₂ and wherein L S D-FP 1 is different from L S D- FP2. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a sapphire substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the hetero -j unction structure comprises a gallium nitr i de (GaN) as the first semiconductor layer interfacing an AlGaN layer as the second semiconductor layer. Original
The HEMT semiconductor power device of claim 1 wherein: the first semiconductor layer is an N-type gallium nitride layer and the second semiconductor layer is an N-type A l GaN layer dispo ed on top of the gallium nitride layer. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a GaN buffer layer disposed on top of a bottom substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the first gate and the second gate comprise a first P-type AlGaN gate and a second P-type Al GaN gate. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: SVG 16428746.07-14-2020.KCNKB₄CILXEAPX5.CLM.1.svg 0.48 5.88 Black and white Original
A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: forming a hetero -j unction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero -j unction structure; forming a first source/drain electrode and second source/drain electrode as two vertical blocks extending upwardly to about a same height from a top surface and at two opposite ends of the hetero-junction structure; forming a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/dra i electrode and forming a first gate underneath the first field plate on the top surface of the hetero-junction structure; forming a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode and forming a second gate underneath the second field plate; and the steps of forming the first field plate and the second field plate further include steps forming form the first and second field plates to extend along substantially a same vertical level but have two different sizes. Currently amended
The method of claim 9 wherein: the process of forming the first gate and the second gate further comprising a step of forming the first gate and the second gate as P-type AlGaN gates. Currently amended
1 1. The method of claim 9 further comprising: forming a sapphire substrate for supporting the hetero -j unction structure thereon. Previously presented
The method of claim 9 wherein: the process of forming the first and the second source/drain electrodes further comprise a ste l of forming the first source/drain electrode and the second source/drain electrode with a metal selected from a group of metals consists of Ti, Al, Ni and Au. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
HEMT GaN bidirectional blocking device
Materials described outside the worked examples.
gallium nitride
GaN
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer; a first source/drain electrode and a second source/drain electrode disposed on two opposite edges as two vertical blocks extendir; upwardly to about a same height from a top surface of the hetero-junction structure; the first source/drain electrode further includes a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode with a first gate disposed on the top surface of the hetero-junction structure underneath the first field plate; and the second source/drain electrode further includes a second field plate extending horizontally from a top portion o f the second source/drain electrode toward the first source/drain electrode with a second gate disposed on the top surface of the hetero-junction structure underneath the second field plate wherein the first field plate and the second field plate are extended along substantially a same vertical level but have two different sizes. Currently amended
The HEMT GaN bidirectional blocking de i ce of claim 1 wherein: the first field plate has a length represented by L SD-FP 1 and the second field plate has a length represented by L SD-FP₂ and wherein L S D-FP 1 is different from L S D- FP2. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a sapphire substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the hetero -j unction structure comprises a gallium nitr i de (GaN) as the first semiconductor layer interfacing an AlGaN layer as the second semiconductor layer. Original
The HEMT semiconductor power device of claim 1 wherein: the first semiconductor layer is an N-type gallium nitride layer and the second semiconductor layer is an N-type A l GaN layer dispo ed on top of the gallium nitride layer. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a GaN buffer layer disposed on top of a bottom substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the first gate and the second gate comprise a first P-type AlGaN gate and a second P-type Al GaN gate. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: SVG 16428746.07-14-2020.KCNKB₄CILXEAPX5.CLM.1.svg 0.48 5.88 Black and white Original
A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: forming a hetero -j unction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero -j unction structure; forming a first source/drain electrode and second source/drain electrode as two vertical blocks extending upwardly to about a same height from a top surface and at two opposite ends of the hetero-junction structure; forming a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/dra i electrode and forming a first gate underneath the first field plate on the top surface of the hetero-junction structure; forming a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode and forming a second gate underneath the second field plate; and the steps of forming the first field plate and the second field plate further include steps forming form the first and second field plates to extend along substantially a same vertical level but have two different sizes. Currently amended
The method of claim 9 wherein: the process of forming the first gate and the second gate further comprising a step of forming the first gate and the second gate as P-type AlGaN gates. Currently amended
1 1. The method of claim 9 further comprising: forming a sapphire substrate for supporting the hetero -j unction structure thereon. Previously presented
The method of claim 9 wherein: the process of forming the first and the second source/drain electrodes further comprise a ste l of forming the first source/drain electrode and the second source/drain electrode with a metal selected from a group of metals consists of Ti, Al, Ni and Au. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
HEMT GaN bidirectional blocking device
Materials described outside the worked examples.
gallium nitride
GaN
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer; a first source/drain electrode and a second source/drain electrode disposed on two opposite edges as two vertical blocks extendir; upwardly to about a same height from a top surface of the hetero-junction structure; the first source/drain electrode further includes a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode with a first gate disposed on the top surface of the hetero-junction structure underneath the first field plate; and the second source/drain electrode further includes a second field plate extending horizontally from a top portion o f the second source/drain electrode toward the first source/drain electrode with a second gate disposed on the top surface of the hetero-junction structure underneath the second field plate wherein the first field plate and the second field plate are extended along substantially a same vertical level but have two different sizes. Currently amended
The HEMT GaN bidirectional blocking de i ce of claim 1 wherein: the first field plate has a length represented by L SD-FP 1 and the second field plate has a length represented by L SD-FP₂ and wherein L S D-FP 1 is different from L S D- FP2. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a sapphire substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the hetero -j unction structure comprises a gallium nitr i de (GaN) as the first semiconductor layer interfacing an AlGaN layer as the second semiconductor layer. Original
The HEMT semiconductor power device of claim 1 wherein: the first semiconductor layer is an N-type gallium nitride layer and the second semiconductor layer is an N-type A l GaN layer dispo ed on top of the gallium nitride layer. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a GaN buffer layer disposed on top of a bottom substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the first gate and the second gate comprise a first P-type AlGaN gate and a second P-type Al GaN gate. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: SVG 16428746.07-14-2020.KCNKB₄CILXEAPX5.CLM.1.svg 0.48 5.88 Black and white Original
A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: forming a hetero -j unction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero -j unction structure; forming a first source/drain electrode and second source/drain electrode as two vertical blocks extending upwardly to about a same height from a top surface and at two opposite ends of the hetero-junction structure; forming a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/dra i electrode and forming a first gate underneath the first field plate on the top surface of the hetero-junction structure; forming a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode and forming a second gate underneath the second field plate; and the steps of forming the first field plate and the second field plate further include steps forming form the first and second field plates to extend along substantially a same vertical level but have two different sizes. Currently amended
The method of claim 9 wherein: the process of forming the first gate and the second gate further comprising a step of forming the first gate and the second gate as P-type AlGaN gates. Currently amended
1 1. The method of claim 9 further comprising: forming a sapphire substrate for supporting the hetero -j unction structure thereon. Previously presented
The method of claim 9 wherein: the process of forming the first and the second source/drain electrodes further comprise a ste l of forming the first source/drain electrode and the second source/drain electrode with a metal selected from a group of metals consists of Ti, Al, Ni and Au. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
HEMT GaN bidirectional blocking device
Materials described outside the worked examples.
gallium nitride
GaN
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer; a first source/drain electrode and a second source/drain electrode disposed on two opposite edges as two vertical blocks extendir; upwardly to about a same height from a top surface of the hetero-junction structure; the first source/drain electrode further includes a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode with a first gate disposed on the top surface of the hetero-junction structure underneath the first field plate; and the second source/drain electrode further includes a second field plate extending horizontally from a top portion o f the second source/drain electrode toward the first source/drain electrode with a second gate disposed on the top surface of the hetero-junction structure underneath the second field plate wherein the first field plate and the second field plate are extended along substantially a same vertical level but have two different sizes. Currently amended
The HEMT GaN bidirectional blocking de i ce of claim 1 wherein: the first field plate has a length represented by L SD-FP 1 and the second field plate has a length represented by L SD-FP₂ and wherein L S D-FP 1 is different from L S D- FP2. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a sapphire substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the hetero -j unction structure comprises a gallium nitr i de (GaN) as the first semiconductor layer interfacing an AlGaN layer as the second semiconductor layer. Original
The HEMT semiconductor power device of claim 1 wherein: the first semiconductor layer is an N-type gallium nitride layer and the second semiconductor layer is an N-type A l GaN layer dispo ed on top of the gallium nitride layer. Original
The HEMT GaN bidirectional blocking device of claim 1 further comprising: a GaN buffer layer disposed on top of a bottom substrate for supporting the hetero -j unction structure thereon. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: the first gate and the second gate comprise a first P-type AlGaN gate and a second P-type Al GaN gate. Original
The HEMT GaN bidirectional blocking device of claim 1 wherein: SVG 16428746.07-14-2020.KCNKB₄CILXEAPX5.CLM.1.svg 0.48 5.88 Black and white Original
A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising: forming a hetero -j unction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero -j unction structure; forming a first source/drain electrode and second source/drain electrode as two vertical blocks extending upwardly to about a same height from a top surface and at two opposite ends of the hetero-junction structure; forming a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/dra i electrode and forming a first gate underneath the first field plate on the top surface of the hetero-junction structure; forming a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode and forming a second gate underneath the second field plate; and the steps of forming the first field plate and the second field plate further include steps forming form the first and second field plates to extend along substantially a same vertical level but have two different sizes. Currently amended
The method of claim 9 wherein: the process of forming the first gate and the second gate further comprising a step of forming the first gate and the second gate as P-type AlGaN gates. Currently amended
1 1. The method of claim 9 further comprising: forming a sapphire substrate for supporting the hetero -j unction structure thereon. Previously presented
The method of claim 9 wherein: the process of forming the first and the second source/drain electrodes further comprise a ste l of forming the first source/drain electrode and the second source/drain electrode with a metal selected from a group of metals consists of Ti, Al, Ni and Au. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
HEMT GaN bidirectional blocking device
Materials described outside the worked examples.
gallium nitride
GaN
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
single gate HEMT GaN bidirectional switch (Fig. 2)
dual gate HEMT GaN bidirectional switch (Fig. 3)
single gate MISFET GaN bidirectional switch (Fig. 4)
two-dimensional electron gas
sapphire
source/drain electrode metals (Ti, Al, Ni, Au)
cap/passivation layer (GaN/SiN/SiO₂)
| 100–400 nm |
| — |
Thickness | 10–30 nm | — |
single gate HEMT GaN bidirectional switch (Fig. 2)
dual gate HEMT GaN bidirectional switch (Fig. 3)
single gate MISFET GaN bidirectional switch (Fig. 4)
two-dimensional electron gas
sapphire
source/drain electrode metals (Ti, Al, Ni, Au)
cap/passivation layer (GaN/SiN/SiO₂)
| 100–400 nm |
| — |
Thickness | 10–30 nm | — |
single gate HEMT GaN bidirectional switch (Fig. 2)
dual gate HEMT GaN bidirectional switch (Fig. 3)
single gate MISFET GaN bidirectional switch (Fig. 4)
two-dimensional electron gas
sapphire
source/drain electrode metals (Ti, Al, Ni, Au)
cap/passivation layer (GaN/SiN/SiO₂)
| 100–400 nm |
| — |
Thickness | 10–30 nm | — |
single gate HEMT GaN bidirectional switch (Fig. 2)
dual gate HEMT GaN bidirectional switch (Fig. 3)
single gate MISFET GaN bidirectional switch (Fig. 4)
two-dimensional electron gas
sapphire
source/drain electrode metals (Ti, Al, Ni, Au)
cap/passivation layer (GaN/SiN/SiO₂)
| 100–400 nm |
| — |
Thickness | 10–30 nm | — |