Patent
US 10,533,264The title was amended in Applicant's Response to Office Action dated July 5, 2018. However, the
James Vig Sherrill
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,533,264Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional surface; a two-dimensional sheet suitable for growing 2D material, the sheet being disposed on the two- dimensional surface of the carrier substrate; a furnace configured to form a tubular volume around the carrier substrate and sheet, the tubular volume being open to the atmosphere around the furnace such that gas may fl ow out of the tubular volume to the atmosphere around the furnace; the furnace further including: an entrance formed in the furnace; an exit formed in the furnace; a support extending from the entrance to the exit and configured to support the carrier substrate in the tubular volume in the furnace, a means for driving the carrier and the sheet disposed on the carrier through the furnace, the carrier being disposed on the support as it moves through the furnace, the sheet being disposed on the carrier for moving with the carrier through the furnace in a direction of travel, a first two-dimensional furnace surface disposed in the tubular volume of the furnace and disposed adjacent to and spaced apart from the two-dimensional sheet such that the first two-dimensional furnace surface is facing the two-dimensional sheet when the carrier substrate is disposed on the support, first and second side walls extending from the first two-dimensional furnace surface, extending from the entrance to the exit, being disposed on opposite sides of the sheet, being parallel to the direction of travel of the sheet, such that the tubular volume extends from the entrance to the exit formed by at least the first two- dimensional furnace surface, the first and second side walls, and the sheet and the carrier disposed on the support, at least one supply port for providing a flow of gas into the tubular volume such that the gas flows in a first direction through the tubular volume and through the entrance to the atmosphere around the furnace, and such that gas flows in a second direction through the tubular volume and through the exit to the atmosphere around the furnace and inhibits gases from flowing into the tubular volume from the entrance and the exit, a gas supply for supplying a flow of purge gas through the at least one supply port to purge the tubular volume and for supplying a flow of donor gas into the tubular volume after the tubular volume has been purged with the purge gas, and a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when the donor gas is supplied into the tubular volume. Currently amended
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the at least one supply port comprising a plurality of ports being formed in the quartz plate and through the first two-dimensional furnace surface for delivering gases to the tubular volume in the furnace; and a plurality of passageways formed in the quartz plate and extending from the plurality of ports, the gas supply being connected to the passageways for supplying at least purge gas and donor gas through the passageways to the plurality of ports. Previously presented
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the heater being disposed adjacent to the quartz plate on the opposite side of the quartz plate from the first two-dimensional furnace surface such that the heater and the forming sheet are positioned on opposite sides of the quartz plate and heat from the heater is transmitted through the quartz plate to the forming sheet. Previously presented
The apparatus of claim 1 wherein the first two- dimensional furnace surface and the sheet are configured so that the tubular volume has a rectangular cross section in which the width of the cross section is at least three times height and is less than one million times the height. Previously presented
The apparatus of claim 1 wherein the gas supply and the at least one port are configured to provide a supply of donor gases with a gas distribution and flow rate that produces a laminar flow of the donor gases across the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in a pattern extending across the first two-dimensional furnace surface, the ports being disposed adjacent the sheet in a pattern that extends across the sheet from one side to an opposite side of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface in a direction that is oblique to the direction of travel of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface, the supply ports being disposed adjacent the sheet such that each of the first and second patterns extend across the sheet from one side to an opposite side of the sheet, the first pattern being a line and the second pattern being a V shape having a point with the point being disposed in the mid-region of the first two-dimensional furnace surface. Previously presented
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional carrier surface; a two-dimensional sheet suitable for growing 2D material disposed on the carrier surface; and a furnace configured to form a confining space around the carrier substrate and the sheet, the confining space being open to the atmosphere around the furnace such that gas may flow out of the furnace but also restricting the flow of gas out of the furnace; the furnace further including: an entrance formed in the furnace permitting access to the confining space such that gas may flow from the confining space through the entrance and into the atmosphere around the furnace; an exit formed in the furnace permitting access to the confining space such that gas may flow through the confining space through the exit and into the atmosphere around the furnace; a support configured to support the carrier substrate in the furnace and extending from the entrance to the exit; a first two-dimensional furnace surface disposed adjacent to, substantially parallel to and spaced apart from the two-dimensional sheet when the carrier substrate is disposed on the support with a volume formed between the first two-dimensional furnace surface and the sheet; at least one supply port provided in the first two-dimensional furnace surface for providing a flow of gas into the volume and the confining space such that the gas flows through the confining space and out of the entrance and the exit to the atmosphere around the furnace and such that the flow of gas out of the entrance and exit inhibits other gases from flowing into the entrance and the exit; a gas supply for supplying a flow of purge gas through the at least one supply port to purge the volume and for supplying a flow of donor gas into the volume; a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when a donor gas is supplied into the volume; the entrance being dimensioned to receive the carrier substrate and sheet, leaving an entrance space between the entrance and the carrier substrate and sheet, such that purge gas and donor gas flows from the confined space and out the entrance space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the entrance space and into the confined space of the furnace; the exit being dimensioned to receive the carrier substrate and sheet, leaving an exit space between the exit and the car ri er substrate and sheet, such that purge gas and donor gas flows from the confined space and out the exit space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the exit space and into the confined space of the furnace; and a means for moving the carrier substrate and the sheet into the entrance of the furnace and within the furnace along a direction of travel and out of the exit. Currently amended
The apparatus of claim 11 wherein the at least one port in the first two-dimensional furnace surface comprises a plurality of ports disposed in the first two- dimensional furnace surface and extending across the first two-dimensional furnace surface in a pattern that is disposed obliquely to the direction of travel of the carrier substrate. Previously presented
The apparatus of claim 11 further comprising a gas chamber formed around the confining space of the furnace for capturing and containing the purge gases and the donor gases that flow out of the furnace and forming a gas atmosphere around the furnace. Previously presented
The apparatus of claim 11 further comprising: a plurality of carrier substrates disposed in the furnace and moving together through the furnace; the sheet comprising one or more sheets suitable for growing 2D material with at least one sheet disposed on each of the plurality of carrier substrates; wherein the heater is configured for heating the sheets to temperatures sufficient to form 2D material on the sheets when exposed to the donor gas in the volume; and wherein the means for moving the carrier substrate and the sheet is configured to move the plurality of carrier substrates into the entrance, through the furnace and out the exit of the furnace, so that 2D material is grown on each sheet as each sheet is heated and passes through the donor gases in the volume of the furnace. Currently amended
Canceled
18-26. Canceled
Canceled
An apparatus for producing graphene, the apparatus comprising: a reaction chamber having a gas confining space extending through the reaction chamber from a chamber entrance to a chamber exit, the chamber entrance and chamber exit being open to the atmosphere around the reaction chamber such that the gas confining space is open to the atmosphere; a support extending through the gas confining space of the reaction chamber from the chamber entrance to the chamber exit; a plurality of carriers positioned on the support, each of the plurality of carriers including a top surface and a sheet suitable for growing graphene disposed across the top surface [[;]], the plurality of carriers being configured to simultaneously move on the support through the gas confining space from the chamber entrance and through the chamber exit while the gas confining space is open to the atmosphere; a drive mechanism having a surface that engages at least one of the plurality of carriers for simultaneously moving the plurality of carriers through the gas confining space;, heaters disposed adjacent the gas confining space for heating the sheets to a temperature of at least 900 C to grow graphene on the sheets as the plurality of carriers are driven through the gas confining space of the reaction chamber; a plurality of ports continuously introducing a gas into the gas confining space such that the gas confining space is maintained at a positive pressure as the plurality of carriers are driven through the gas confining space, the plurality of ports and gas confining space being positioned and configured to continuously flow at least a portion of the gas in a first direction through the chamber entrance of the reaction chamber and to continuously flow at least a portion of the gas in a second direction rearwardly through the chamber exit of the reaction chamber; and a gas supply supplying the gas to the plurality of ports, the gas supply including a donor gas operable to donate carbon atoms to react with the sheets stretched across the top surface of the plurality of carriers and heated by the heaters to grow graphene on the sheets. Currently amended
The apparatus of claim 27 wherein the gas confining space, the plurality of ports, and a rate of flow of the gas are configured to create a laminar flow of the donor gas across the sheets on the plurality of carriers as the plurality of carriers are driven through the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber includes a plurality of sections defining the gas confining space, the gas supply continuously supplying a purge gas to the gas confining space in at least a first section adjacent to the chamber entrance. Previously presented
The apparatus of claim 27 further comprising a gas chamber formed around the reaction chamber for capturing and containing the gas flowing out of the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber, the support, and the plurality of carriers are formed in whole of one or more materials selected from the group consisting of quartz, fused silica, fused quartz, and ceramics. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
2D material growth apparatus (tubular furnace type)
graphene growth apparatus (reaction chamber type)
Materials described outside the worked examples.
2D material
purge gas
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,533,264Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional surface; a two-dimensional sheet suitable for growing 2D material, the sheet being disposed on the two- dimensional surface of the carrier substrate; a furnace configured to form a tubular volume around the carrier substrate and sheet, the tubular volume being open to the atmosphere around the furnace such that gas may fl ow out of the tubular volume to the atmosphere around the furnace; the furnace further including: an entrance formed in the furnace; an exit formed in the furnace; a support extending from the entrance to the exit and configured to support the carrier substrate in the tubular volume in the furnace, a means for driving the carrier and the sheet disposed on the carrier through the furnace, the carrier being disposed on the support as it moves through the furnace, the sheet being disposed on the carrier for moving with the carrier through the furnace in a direction of travel, a first two-dimensional furnace surface disposed in the tubular volume of the furnace and disposed adjacent to and spaced apart from the two-dimensional sheet such that the first two-dimensional furnace surface is facing the two-dimensional sheet when the carrier substrate is disposed on the support, first and second side walls extending from the first two-dimensional furnace surface, extending from the entrance to the exit, being disposed on opposite sides of the sheet, being parallel to the direction of travel of the sheet, such that the tubular volume extends from the entrance to the exit formed by at least the first two- dimensional furnace surface, the first and second side walls, and the sheet and the carrier disposed on the support, at least one supply port for providing a flow of gas into the tubular volume such that the gas flows in a first direction through the tubular volume and through the entrance to the atmosphere around the furnace, and such that gas flows in a second direction through the tubular volume and through the exit to the atmosphere around the furnace and inhibits gases from flowing into the tubular volume from the entrance and the exit, a gas supply for supplying a flow of purge gas through the at least one supply port to purge the tubular volume and for supplying a flow of donor gas into the tubular volume after the tubular volume has been purged with the purge gas, and a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when the donor gas is supplied into the tubular volume. Currently amended
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the at least one supply port comprising a plurality of ports being formed in the quartz plate and through the first two-dimensional furnace surface for delivering gases to the tubular volume in the furnace; and a plurality of passageways formed in the quartz plate and extending from the plurality of ports, the gas supply being connected to the passageways for supplying at least purge gas and donor gas through the passageways to the plurality of ports. Previously presented
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the heater being disposed adjacent to the quartz plate on the opposite side of the quartz plate from the first two-dimensional furnace surface such that the heater and the forming sheet are positioned on opposite sides of the quartz plate and heat from the heater is transmitted through the quartz plate to the forming sheet. Previously presented
The apparatus of claim 1 wherein the first two- dimensional furnace surface and the sheet are configured so that the tubular volume has a rectangular cross section in which the width of the cross section is at least three times height and is less than one million times the height. Previously presented
The apparatus of claim 1 wherein the gas supply and the at least one port are configured to provide a supply of donor gases with a gas distribution and flow rate that produces a laminar flow of the donor gases across the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in a pattern extending across the first two-dimensional furnace surface, the ports being disposed adjacent the sheet in a pattern that extends across the sheet from one side to an opposite side of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface in a direction that is oblique to the direction of travel of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface, the supply ports being disposed adjacent the sheet such that each of the first and second patterns extend across the sheet from one side to an opposite side of the sheet, the first pattern being a line and the second pattern being a V shape having a point with the point being disposed in the mid-region of the first two-dimensional furnace surface. Previously presented
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional carrier surface; a two-dimensional sheet suitable for growing 2D material disposed on the carrier surface; and a furnace configured to form a confining space around the carrier substrate and the sheet, the confining space being open to the atmosphere around the furnace such that gas may flow out of the furnace but also restricting the flow of gas out of the furnace; the furnace further including: an entrance formed in the furnace permitting access to the confining space such that gas may flow from the confining space through the entrance and into the atmosphere around the furnace; an exit formed in the furnace permitting access to the confining space such that gas may flow through the confining space through the exit and into the atmosphere around the furnace; a support configured to support the carrier substrate in the furnace and extending from the entrance to the exit; a first two-dimensional furnace surface disposed adjacent to, substantially parallel to and spaced apart from the two-dimensional sheet when the carrier substrate is disposed on the support with a volume formed between the first two-dimensional furnace surface and the sheet; at least one supply port provided in the first two-dimensional furnace surface for providing a flow of gas into the volume and the confining space such that the gas flows through the confining space and out of the entrance and the exit to the atmosphere around the furnace and such that the flow of gas out of the entrance and exit inhibits other gases from flowing into the entrance and the exit; a gas supply for supplying a flow of purge gas through the at least one supply port to purge the volume and for supplying a flow of donor gas into the volume; a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when a donor gas is supplied into the volume; the entrance being dimensioned to receive the carrier substrate and sheet, leaving an entrance space between the entrance and the carrier substrate and sheet, such that purge gas and donor gas flows from the confined space and out the entrance space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the entrance space and into the confined space of the furnace; the exit being dimensioned to receive the carrier substrate and sheet, leaving an exit space between the exit and the car ri er substrate and sheet, such that purge gas and donor gas flows from the confined space and out the exit space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the exit space and into the confined space of the furnace; and a means for moving the carrier substrate and the sheet into the entrance of the furnace and within the furnace along a direction of travel and out of the exit. Currently amended
The apparatus of claim 11 wherein the at least one port in the first two-dimensional furnace surface comprises a plurality of ports disposed in the first two- dimensional furnace surface and extending across the first two-dimensional furnace surface in a pattern that is disposed obliquely to the direction of travel of the carrier substrate. Previously presented
The apparatus of claim 11 further comprising a gas chamber formed around the confining space of the furnace for capturing and containing the purge gases and the donor gases that flow out of the furnace and forming a gas atmosphere around the furnace. Previously presented
The apparatus of claim 11 further comprising: a plurality of carrier substrates disposed in the furnace and moving together through the furnace; the sheet comprising one or more sheets suitable for growing 2D material with at least one sheet disposed on each of the plurality of carrier substrates; wherein the heater is configured for heating the sheets to temperatures sufficient to form 2D material on the sheets when exposed to the donor gas in the volume; and wherein the means for moving the carrier substrate and the sheet is configured to move the plurality of carrier substrates into the entrance, through the furnace and out the exit of the furnace, so that 2D material is grown on each sheet as each sheet is heated and passes through the donor gases in the volume of the furnace. Currently amended
Canceled
18-26. Canceled
Canceled
An apparatus for producing graphene, the apparatus comprising: a reaction chamber having a gas confining space extending through the reaction chamber from a chamber entrance to a chamber exit, the chamber entrance and chamber exit being open to the atmosphere around the reaction chamber such that the gas confining space is open to the atmosphere; a support extending through the gas confining space of the reaction chamber from the chamber entrance to the chamber exit; a plurality of carriers positioned on the support, each of the plurality of carriers including a top surface and a sheet suitable for growing graphene disposed across the top surface [[;]], the plurality of carriers being configured to simultaneously move on the support through the gas confining space from the chamber entrance and through the chamber exit while the gas confining space is open to the atmosphere; a drive mechanism having a surface that engages at least one of the plurality of carriers for simultaneously moving the plurality of carriers through the gas confining space;, heaters disposed adjacent the gas confining space for heating the sheets to a temperature of at least 900 C to grow graphene on the sheets as the plurality of carriers are driven through the gas confining space of the reaction chamber; a plurality of ports continuously introducing a gas into the gas confining space such that the gas confining space is maintained at a positive pressure as the plurality of carriers are driven through the gas confining space, the plurality of ports and gas confining space being positioned and configured to continuously flow at least a portion of the gas in a first direction through the chamber entrance of the reaction chamber and to continuously flow at least a portion of the gas in a second direction rearwardly through the chamber exit of the reaction chamber; and a gas supply supplying the gas to the plurality of ports, the gas supply including a donor gas operable to donate carbon atoms to react with the sheets stretched across the top surface of the plurality of carriers and heated by the heaters to grow graphene on the sheets. Currently amended
The apparatus of claim 27 wherein the gas confining space, the plurality of ports, and a rate of flow of the gas are configured to create a laminar flow of the donor gas across the sheets on the plurality of carriers as the plurality of carriers are driven through the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber includes a plurality of sections defining the gas confining space, the gas supply continuously supplying a purge gas to the gas confining space in at least a first section adjacent to the chamber entrance. Previously presented
The apparatus of claim 27 further comprising a gas chamber formed around the reaction chamber for capturing and containing the gas flowing out of the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber, the support, and the plurality of carriers are formed in whole of one or more materials selected from the group consisting of quartz, fused silica, fused quartz, and ceramics. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
2D material growth apparatus (tubular furnace type)
graphene growth apparatus (reaction chamber type)
Materials described outside the worked examples.
2D material
purge gas
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,533,264Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional surface; a two-dimensional sheet suitable for growing 2D material, the sheet being disposed on the two- dimensional surface of the carrier substrate; a furnace configured to form a tubular volume around the carrier substrate and sheet, the tubular volume being open to the atmosphere around the furnace such that gas may fl ow out of the tubular volume to the atmosphere around the furnace; the furnace further including: an entrance formed in the furnace; an exit formed in the furnace; a support extending from the entrance to the exit and configured to support the carrier substrate in the tubular volume in the furnace, a means for driving the carrier and the sheet disposed on the carrier through the furnace, the carrier being disposed on the support as it moves through the furnace, the sheet being disposed on the carrier for moving with the carrier through the furnace in a direction of travel, a first two-dimensional furnace surface disposed in the tubular volume of the furnace and disposed adjacent to and spaced apart from the two-dimensional sheet such that the first two-dimensional furnace surface is facing the two-dimensional sheet when the carrier substrate is disposed on the support, first and second side walls extending from the first two-dimensional furnace surface, extending from the entrance to the exit, being disposed on opposite sides of the sheet, being parallel to the direction of travel of the sheet, such that the tubular volume extends from the entrance to the exit formed by at least the first two- dimensional furnace surface, the first and second side walls, and the sheet and the carrier disposed on the support, at least one supply port for providing a flow of gas into the tubular volume such that the gas flows in a first direction through the tubular volume and through the entrance to the atmosphere around the furnace, and such that gas flows in a second direction through the tubular volume and through the exit to the atmosphere around the furnace and inhibits gases from flowing into the tubular volume from the entrance and the exit, a gas supply for supplying a flow of purge gas through the at least one supply port to purge the tubular volume and for supplying a flow of donor gas into the tubular volume after the tubular volume has been purged with the purge gas, and a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when the donor gas is supplied into the tubular volume. Currently amended
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the at least one supply port comprising a plurality of ports being formed in the quartz plate and through the first two-dimensional furnace surface for delivering gases to the tubular volume in the furnace; and a plurality of passageways formed in the quartz plate and extending from the plurality of ports, the gas supply being connected to the passageways for supplying at least purge gas and donor gas through the passageways to the plurality of ports. Previously presented
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the heater being disposed adjacent to the quartz plate on the opposite side of the quartz plate from the first two-dimensional furnace surface such that the heater and the forming sheet are positioned on opposite sides of the quartz plate and heat from the heater is transmitted through the quartz plate to the forming sheet. Previously presented
The apparatus of claim 1 wherein the first two- dimensional furnace surface and the sheet are configured so that the tubular volume has a rectangular cross section in which the width of the cross section is at least three times height and is less than one million times the height. Previously presented
The apparatus of claim 1 wherein the gas supply and the at least one port are configured to provide a supply of donor gases with a gas distribution and flow rate that produces a laminar flow of the donor gases across the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in a pattern extending across the first two-dimensional furnace surface, the ports being disposed adjacent the sheet in a pattern that extends across the sheet from one side to an opposite side of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface in a direction that is oblique to the direction of travel of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface, the supply ports being disposed adjacent the sheet such that each of the first and second patterns extend across the sheet from one side to an opposite side of the sheet, the first pattern being a line and the second pattern being a V shape having a point with the point being disposed in the mid-region of the first two-dimensional furnace surface. Previously presented
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional carrier surface; a two-dimensional sheet suitable for growing 2D material disposed on the carrier surface; and a furnace configured to form a confining space around the carrier substrate and the sheet, the confining space being open to the atmosphere around the furnace such that gas may flow out of the furnace but also restricting the flow of gas out of the furnace; the furnace further including: an entrance formed in the furnace permitting access to the confining space such that gas may flow from the confining space through the entrance and into the atmosphere around the furnace; an exit formed in the furnace permitting access to the confining space such that gas may flow through the confining space through the exit and into the atmosphere around the furnace; a support configured to support the carrier substrate in the furnace and extending from the entrance to the exit; a first two-dimensional furnace surface disposed adjacent to, substantially parallel to and spaced apart from the two-dimensional sheet when the carrier substrate is disposed on the support with a volume formed between the first two-dimensional furnace surface and the sheet; at least one supply port provided in the first two-dimensional furnace surface for providing a flow of gas into the volume and the confining space such that the gas flows through the confining space and out of the entrance and the exit to the atmosphere around the furnace and such that the flow of gas out of the entrance and exit inhibits other gases from flowing into the entrance and the exit; a gas supply for supplying a flow of purge gas through the at least one supply port to purge the volume and for supplying a flow of donor gas into the volume; a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when a donor gas is supplied into the volume; the entrance being dimensioned to receive the carrier substrate and sheet, leaving an entrance space between the entrance and the carrier substrate and sheet, such that purge gas and donor gas flows from the confined space and out the entrance space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the entrance space and into the confined space of the furnace; the exit being dimensioned to receive the carrier substrate and sheet, leaving an exit space between the exit and the car ri er substrate and sheet, such that purge gas and donor gas flows from the confined space and out the exit space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the exit space and into the confined space of the furnace; and a means for moving the carrier substrate and the sheet into the entrance of the furnace and within the furnace along a direction of travel and out of the exit. Currently amended
The apparatus of claim 11 wherein the at least one port in the first two-dimensional furnace surface comprises a plurality of ports disposed in the first two- dimensional furnace surface and extending across the first two-dimensional furnace surface in a pattern that is disposed obliquely to the direction of travel of the carrier substrate. Previously presented
The apparatus of claim 11 further comprising a gas chamber formed around the confining space of the furnace for capturing and containing the purge gases and the donor gases that flow out of the furnace and forming a gas atmosphere around the furnace. Previously presented
The apparatus of claim 11 further comprising: a plurality of carrier substrates disposed in the furnace and moving together through the furnace; the sheet comprising one or more sheets suitable for growing 2D material with at least one sheet disposed on each of the plurality of carrier substrates; wherein the heater is configured for heating the sheets to temperatures sufficient to form 2D material on the sheets when exposed to the donor gas in the volume; and wherein the means for moving the carrier substrate and the sheet is configured to move the plurality of carrier substrates into the entrance, through the furnace and out the exit of the furnace, so that 2D material is grown on each sheet as each sheet is heated and passes through the donor gases in the volume of the furnace. Currently amended
Canceled
18-26. Canceled
Canceled
An apparatus for producing graphene, the apparatus comprising: a reaction chamber having a gas confining space extending through the reaction chamber from a chamber entrance to a chamber exit, the chamber entrance and chamber exit being open to the atmosphere around the reaction chamber such that the gas confining space is open to the atmosphere; a support extending through the gas confining space of the reaction chamber from the chamber entrance to the chamber exit; a plurality of carriers positioned on the support, each of the plurality of carriers including a top surface and a sheet suitable for growing graphene disposed across the top surface [[;]], the plurality of carriers being configured to simultaneously move on the support through the gas confining space from the chamber entrance and through the chamber exit while the gas confining space is open to the atmosphere; a drive mechanism having a surface that engages at least one of the plurality of carriers for simultaneously moving the plurality of carriers through the gas confining space;, heaters disposed adjacent the gas confining space for heating the sheets to a temperature of at least 900 C to grow graphene on the sheets as the plurality of carriers are driven through the gas confining space of the reaction chamber; a plurality of ports continuously introducing a gas into the gas confining space such that the gas confining space is maintained at a positive pressure as the plurality of carriers are driven through the gas confining space, the plurality of ports and gas confining space being positioned and configured to continuously flow at least a portion of the gas in a first direction through the chamber entrance of the reaction chamber and to continuously flow at least a portion of the gas in a second direction rearwardly through the chamber exit of the reaction chamber; and a gas supply supplying the gas to the plurality of ports, the gas supply including a donor gas operable to donate carbon atoms to react with the sheets stretched across the top surface of the plurality of carriers and heated by the heaters to grow graphene on the sheets. Currently amended
The apparatus of claim 27 wherein the gas confining space, the plurality of ports, and a rate of flow of the gas are configured to create a laminar flow of the donor gas across the sheets on the plurality of carriers as the plurality of carriers are driven through the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber includes a plurality of sections defining the gas confining space, the gas supply continuously supplying a purge gas to the gas confining space in at least a first section adjacent to the chamber entrance. Previously presented
The apparatus of claim 27 further comprising a gas chamber formed around the reaction chamber for capturing and containing the gas flowing out of the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber, the support, and the plurality of carriers are formed in whole of one or more materials selected from the group consisting of quartz, fused silica, fused quartz, and ceramics. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
2D material growth apparatus (tubular furnace type)
graphene growth apparatus (reaction chamber type)
Materials described outside the worked examples.
2D material
purge gas
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,533,264Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional surface; a two-dimensional sheet suitable for growing 2D material, the sheet being disposed on the two- dimensional surface of the carrier substrate; a furnace configured to form a tubular volume around the carrier substrate and sheet, the tubular volume being open to the atmosphere around the furnace such that gas may fl ow out of the tubular volume to the atmosphere around the furnace; the furnace further including: an entrance formed in the furnace; an exit formed in the furnace; a support extending from the entrance to the exit and configured to support the carrier substrate in the tubular volume in the furnace, a means for driving the carrier and the sheet disposed on the carrier through the furnace, the carrier being disposed on the support as it moves through the furnace, the sheet being disposed on the carrier for moving with the carrier through the furnace in a direction of travel, a first two-dimensional furnace surface disposed in the tubular volume of the furnace and disposed adjacent to and spaced apart from the two-dimensional sheet such that the first two-dimensional furnace surface is facing the two-dimensional sheet when the carrier substrate is disposed on the support, first and second side walls extending from the first two-dimensional furnace surface, extending from the entrance to the exit, being disposed on opposite sides of the sheet, being parallel to the direction of travel of the sheet, such that the tubular volume extends from the entrance to the exit formed by at least the first two- dimensional furnace surface, the first and second side walls, and the sheet and the carrier disposed on the support, at least one supply port for providing a flow of gas into the tubular volume such that the gas flows in a first direction through the tubular volume and through the entrance to the atmosphere around the furnace, and such that gas flows in a second direction through the tubular volume and through the exit to the atmosphere around the furnace and inhibits gases from flowing into the tubular volume from the entrance and the exit, a gas supply for supplying a flow of purge gas through the at least one supply port to purge the tubular volume and for supplying a flow of donor gas into the tubular volume after the tubular volume has been purged with the purge gas, and a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when the donor gas is supplied into the tubular volume. Currently amended
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the at least one supply port comprising a plurality of ports being formed in the quartz plate and through the first two-dimensional furnace surface for delivering gases to the tubular volume in the furnace; and a plurality of passageways formed in the quartz plate and extending from the plurality of ports, the gas supply being connected to the passageways for supplying at least purge gas and donor gas through the passageways to the plurality of ports. Previously presented
The apparatus of claim 1 further comprising: a quartz plate with the first two-dimensional furnace surface being formed on the quartz plate; the heater being disposed adjacent to the quartz plate on the opposite side of the quartz plate from the first two-dimensional furnace surface such that the heater and the forming sheet are positioned on opposite sides of the quartz plate and heat from the heater is transmitted through the quartz plate to the forming sheet. Previously presented
The apparatus of claim 1 wherein the first two- dimensional furnace surface and the sheet are configured so that the tubular volume has a rectangular cross section in which the width of the cross section is at least three times height and is less than one million times the height. Previously presented
The apparatus of claim 1 wherein the gas supply and the at least one port are configured to provide a supply of donor gases with a gas distribution and flow rate that produces a laminar flow of the donor gases across the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in a pattern extending across the first two-dimensional furnace surface, the ports being disposed adjacent the sheet in a pattern that extends across the sheet from one side to an opposite side of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface in a direction that is oblique to the direction of travel of the sheet. Previously presented
The apparatus of claim 1 wherein the at least one supply port comprises a plurality of ports formed in the first two-dimensional furnace surface and disposed in first and second patterns extending across the first two-dimensional furnace surface, the supply ports being disposed adjacent the sheet such that each of the first and second patterns extend across the sheet from one side to an opposite side of the sheet, the first pattern being a line and the second pattern being a V shape having a point with the point being disposed in the mid-region of the first two-dimensional furnace surface. Previously presented
An apparatus for producing 2D material, comprising: a carrier substrate having a two-dimensional carrier surface; a two-dimensional sheet suitable for growing 2D material disposed on the carrier surface; and a furnace configured to form a confining space around the carrier substrate and the sheet, the confining space being open to the atmosphere around the furnace such that gas may flow out of the furnace but also restricting the flow of gas out of the furnace; the furnace further including: an entrance formed in the furnace permitting access to the confining space such that gas may flow from the confining space through the entrance and into the atmosphere around the furnace; an exit formed in the furnace permitting access to the confining space such that gas may flow through the confining space through the exit and into the atmosphere around the furnace; a support configured to support the carrier substrate in the furnace and extending from the entrance to the exit; a first two-dimensional furnace surface disposed adjacent to, substantially parallel to and spaced apart from the two-dimensional sheet when the carrier substrate is disposed on the support with a volume formed between the first two-dimensional furnace surface and the sheet; at least one supply port provided in the first two-dimensional furnace surface for providing a flow of gas into the volume and the confining space such that the gas flows through the confining space and out of the entrance and the exit to the atmosphere around the furnace and such that the flow of gas out of the entrance and exit inhibits other gases from flowing into the entrance and the exit; a gas supply for supplying a flow of purge gas through the at least one supply port to purge the volume and for supplying a flow of donor gas into the volume; a heater for heating the sheet to a temperature sufficient to form 2D material on the sheet when a donor gas is supplied into the volume; the entrance being dimensioned to receive the carrier substrate and sheet, leaving an entrance space between the entrance and the carrier substrate and sheet, such that purge gas and donor gas flows from the confined space and out the entrance space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the entrance space and into the confined space of the furnace; the exit being dimensioned to receive the carrier substrate and sheet, leaving an exit space between the exit and the car ri er substrate and sheet, such that purge gas and donor gas flows from the confined space and out the exit space to the atmosphere around the furnace and inhibits gas from the atmosphere around the furnace from entering the exit space and into the confined space of the furnace; and a means for moving the carrier substrate and the sheet into the entrance of the furnace and within the furnace along a direction of travel and out of the exit. Currently amended
The apparatus of claim 11 wherein the at least one port in the first two-dimensional furnace surface comprises a plurality of ports disposed in the first two- dimensional furnace surface and extending across the first two-dimensional furnace surface in a pattern that is disposed obliquely to the direction of travel of the carrier substrate. Previously presented
The apparatus of claim 11 further comprising a gas chamber formed around the confining space of the furnace for capturing and containing the purge gases and the donor gases that flow out of the furnace and forming a gas atmosphere around the furnace. Previously presented
The apparatus of claim 11 further comprising: a plurality of carrier substrates disposed in the furnace and moving together through the furnace; the sheet comprising one or more sheets suitable for growing 2D material with at least one sheet disposed on each of the plurality of carrier substrates; wherein the heater is configured for heating the sheets to temperatures sufficient to form 2D material on the sheets when exposed to the donor gas in the volume; and wherein the means for moving the carrier substrate and the sheet is configured to move the plurality of carrier substrates into the entrance, through the furnace and out the exit of the furnace, so that 2D material is grown on each sheet as each sheet is heated and passes through the donor gases in the volume of the furnace. Currently amended
Canceled
18-26. Canceled
Canceled
An apparatus for producing graphene, the apparatus comprising: a reaction chamber having a gas confining space extending through the reaction chamber from a chamber entrance to a chamber exit, the chamber entrance and chamber exit being open to the atmosphere around the reaction chamber such that the gas confining space is open to the atmosphere; a support extending through the gas confining space of the reaction chamber from the chamber entrance to the chamber exit; a plurality of carriers positioned on the support, each of the plurality of carriers including a top surface and a sheet suitable for growing graphene disposed across the top surface [[;]], the plurality of carriers being configured to simultaneously move on the support through the gas confining space from the chamber entrance and through the chamber exit while the gas confining space is open to the atmosphere; a drive mechanism having a surface that engages at least one of the plurality of carriers for simultaneously moving the plurality of carriers through the gas confining space;, heaters disposed adjacent the gas confining space for heating the sheets to a temperature of at least 900 C to grow graphene on the sheets as the plurality of carriers are driven through the gas confining space of the reaction chamber; a plurality of ports continuously introducing a gas into the gas confining space such that the gas confining space is maintained at a positive pressure as the plurality of carriers are driven through the gas confining space, the plurality of ports and gas confining space being positioned and configured to continuously flow at least a portion of the gas in a first direction through the chamber entrance of the reaction chamber and to continuously flow at least a portion of the gas in a second direction rearwardly through the chamber exit of the reaction chamber; and a gas supply supplying the gas to the plurality of ports, the gas supply including a donor gas operable to donate carbon atoms to react with the sheets stretched across the top surface of the plurality of carriers and heated by the heaters to grow graphene on the sheets. Currently amended
The apparatus of claim 27 wherein the gas confining space, the plurality of ports, and a rate of flow of the gas are configured to create a laminar flow of the donor gas across the sheets on the plurality of carriers as the plurality of carriers are driven through the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber includes a plurality of sections defining the gas confining space, the gas supply continuously supplying a purge gas to the gas confining space in at least a first section adjacent to the chamber entrance. Previously presented
The apparatus of claim 27 further comprising a gas chamber formed around the reaction chamber for capturing and containing the gas flowing out of the gas confining space. Previously presented
The apparatus of claim 27 wherein the reaction chamber, the support, and the plurality of carriers are formed in whole of one or more materials selected from the group consisting of quartz, fused silica, fused quartz, and ceramics. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
2D material growth apparatus (tubular furnace type)
graphene growth apparatus (reaction chamber type)
Materials described outside the worked examples.
2D material
purge gas
Additional fabrication and treatment steps described in the patent.
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