Patent
US 10,243,069SOURCE/DRAIN REGROWTH FOR LOW CONTACT RESISTANCE TO 2D ELECTRON GAS IN GALLIUM NITRIDE TRANSISTORS
Han Wui Then
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,243,069Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 3, the charge inducing layer 108 may be formed on the gallium nitride layer 102 As previously discussed, in one embodiment, the charge inducing layer 108 …
FIG. 4, a hardmask 132, such as silicon nitride, silicon oxide, and the like, may be patterned by any known technique, such as photolithography, and a recess …
FIG. 5, in an embodiment of the present description, a portion of the hard mask 132 may be removed proximate the recess 134 to expose a portion of the charge …
FIG. 6, the exposed polarization layer portion 136 may serve as a nucleation site during the regrowth process, such that the single-crystal portion 142 of the …
FIG. 7). 15 It is still further noted that the ability to fabricate a single-crystal portion 142 for a source/drain structure 104 out of the exposed …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
FIG. 10 illustrates a computing device in accordance with one implementation of the present description.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The microelectronic structure of claim [[2]] 1, wherein the single- crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The microelectronic structure of claim 5, drain structure is N+ doped. New
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The microelectronic structure of claim 6, wherein the polarization layer comprises aluminum indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises aluminum nitride. Original
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; a source/drain structure including a single-crystal portion abutting the 2D electron gas; and a poly crystal portion of the source/drain structure abutting the single- crystal portion of the source/drain structure and the gallium nitride layer. Currently amended
- 20. Canceled
Canceled
An electronic system, comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The electronic system of claim [[22]] 21, wherein the single-crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride la y er, a charge inducing la y er on the gallium nitride layer, a 2D electron gas within the gallium nitride la y er, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The electronic system of claim 25, wherein structure is N+ doped. New portion of the source/drain structure abutting the and the gallium nitride layer. Currently wherein the single-crystal portion of the source/the single-crystal portion of the source/drain
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing la y er on the ga lliu m nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The electronic system of claim 26, wherein the polarization layer comprises aluminum indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises aluminum nitride. Previously presented
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, a source/drain structure including a single-crystal portion abutting the 2D electron gas, and a poly-crystal single-crystal portion of the source/drain structure amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with InGaN single-crystal source/drain (m-plane oriented)
GaN HEMT with GaN single-crystal source/drain (m-plane oriented)
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 3.4 eV | GaN |
Fet Mobility |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,069Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 3, the charge inducing layer 108 may be formed on the gallium nitride layer 102 As previously discussed, in one embodiment, the charge inducing layer 108 …
FIG. 4, a hardmask 132, such as silicon nitride, silicon oxide, and the like, may be patterned by any known technique, such as photolithography, and a recess …
FIG. 5, in an embodiment of the present description, a portion of the hard mask 132 may be removed proximate the recess 134 to expose a portion of the charge …
FIG. 6, the exposed polarization layer portion 136 may serve as a nucleation site during the regrowth process, such that the single-crystal portion 142 of the …
FIG. 7). 15 It is still further noted that the ability to fabricate a single-crystal portion 142 for a source/drain structure 104 out of the exposed …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
FIG. 10 illustrates a computing device in accordance with one implementation of the present description.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The microelectronic structure of claim [[2]] 1, wherein the single- crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The microelectronic structure of claim 5, drain structure is N+ doped. New
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The microelectronic structure of claim 6, wherein the polarization layer comprises aluminum indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises aluminum nitride. Original
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; a source/drain structure including a single-crystal portion abutting the 2D electron gas; and a poly crystal portion of the source/drain structure abutting the single- crystal portion of the source/drain structure and the gallium nitride layer. Currently amended
- 20. Canceled
Canceled
An electronic system, comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The electronic system of claim [[22]] 21, wherein the single-crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride la y er, a charge inducing la y er on the gallium nitride layer, a 2D electron gas within the gallium nitride la y er, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The electronic system of claim 25, wherein structure is N+ doped. New portion of the source/drain structure abutting the and the gallium nitride layer. Currently wherein the single-crystal portion of the source/the single-crystal portion of the source/drain
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing la y er on the ga lliu m nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The electronic system of claim 26, wherein the polarization layer comprises aluminum indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises aluminum nitride. Previously presented
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, a source/drain structure including a single-crystal portion abutting the 2D electron gas, and a poly-crystal single-crystal portion of the source/drain structure amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with InGaN single-crystal source/drain (m-plane oriented)
GaN HEMT with GaN single-crystal source/drain (m-plane oriented)
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 3.4 eV | GaN |
Fet Mobility |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,069Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 3, the charge inducing layer 108 may be formed on the gallium nitride layer 102 As previously discussed, in one embodiment, the charge inducing layer 108 …
FIG. 4, a hardmask 132, such as silicon nitride, silicon oxide, and the like, may be patterned by any known technique, such as photolithography, and a recess …
FIG. 5, in an embodiment of the present description, a portion of the hard mask 132 may be removed proximate the recess 134 to expose a portion of the charge …
FIG. 6, the exposed polarization layer portion 136 may serve as a nucleation site during the regrowth process, such that the single-crystal portion 142 of the …
FIG. 7). 15 It is still further noted that the ability to fabricate a single-crystal portion 142 for a source/drain structure 104 out of the exposed …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
FIG. 10 illustrates a computing device in accordance with one implementation of the present description.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The microelectronic structure of claim [[2]] 1, wherein the single- crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The microelectronic structure of claim 5, drain structure is N+ doped. New
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The microelectronic structure of claim 6, wherein the polarization layer comprises aluminum indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises aluminum nitride. Original
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; a source/drain structure including a single-crystal portion abutting the 2D electron gas; and a poly crystal portion of the source/drain structure abutting the single- crystal portion of the source/drain structure and the gallium nitride layer. Currently amended
- 20. Canceled
Canceled
An electronic system, comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The electronic system of claim [[22]] 21, wherein the single-crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride la y er, a charge inducing la y er on the gallium nitride layer, a 2D electron gas within the gallium nitride la y er, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The electronic system of claim 25, wherein structure is N+ doped. New portion of the source/drain structure abutting the and the gallium nitride layer. Currently wherein the single-crystal portion of the source/the single-crystal portion of the source/drain
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing la y er on the ga lliu m nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The electronic system of claim 26, wherein the polarization layer comprises aluminum indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises aluminum nitride. Previously presented
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, a source/drain structure including a single-crystal portion abutting the 2D electron gas, and a poly-crystal single-crystal portion of the source/drain structure amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with InGaN single-crystal source/drain (m-plane oriented)
GaN HEMT with GaN single-crystal source/drain (m-plane oriented)
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 3.4 eV | GaN |
Fet Mobility |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,069Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 3, the charge inducing layer 108 may be formed on the gallium nitride layer 102 As previously discussed, in one embodiment, the charge inducing layer 108 …
FIG. 4, a hardmask 132, such as silicon nitride, silicon oxide, and the like, may be patterned by any known technique, such as photolithography, and a recess …
FIG. 5, in an embodiment of the present description, a portion of the hard mask 132 may be removed proximate the recess 134 to expose a portion of the charge …
FIG. 6, the exposed polarization layer portion 136 may serve as a nucleation site during the regrowth process, such that the single-crystal portion 142 of the …
FIG. 7). 15 It is still further noted that the ability to fabricate a single-crystal portion 142 for a source/drain structure 104 out of the exposed …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
FIG. 10 illustrates a computing device in accordance with one implementation of the present description.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The microelectronic structure of claim [[2]] 1, wherein the single- crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The microelectronic structure of claim 5, drain structure is N+ doped. New
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; and a source/drain structure including a single-crystal portion abutting the 2D electron gas; wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The microelectronic structure of claim 6, wherein the polarization layer comprises aluminum indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises indium nitride. Original
The microelectronic structure of claim 6, wherein the crystal transition layer comprises aluminum nitride. Original
A microelectronic structure comprising: a gallium nitride layer; a charge inducing layer on the gallium nitride layer; a 2D electron gas within the gallium nitride layer; a source/drain structure including a single-crystal portion abutting the 2D electron gas; and a poly crystal portion of the source/drain structure abutting the single- crystal portion of the source/drain structure and the gallium nitride layer. Currently amended
- 20. Canceled
Canceled
An electronic system, comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is indium gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
Canceled
The electronic system of claim [[22]] 21, wherein the single-crystal portion of the source/drain structure is N+ doped. Currently amended
Canceled
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride la y er, a charge inducing la y er on the gallium nitride layer, a 2D electron gas within the gallium nitride la y er, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the single-crystal portion is gallium nitride having a crystal orientation aligned substantially parallel to m -planes of a hexagonal wurtzite crystal structure of the gallium nitride layer. Currently amended
The electronic system of claim 25, wherein structure is N+ doped. New portion of the source/drain structure abutting the and the gallium nitride layer. Currently wherein the single-crystal portion of the source/the single-crystal portion of the source/drain
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing la y er on the ga lliu m nitride layer, a 2D electron gas within the gallium nitride layer, and a source/drain structure including a single-crystal portion abutting the 2D electron gas, wherein the charge inducing layer comprises a polarization layer formed on a crystal transition layer, wherein the crystal transition layer abuts the gallium nitride layer. Currently amended
The electronic system of claim 26, wherein the polarization layer comprises aluminum indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises indium nitride. Previously presented
The electronic system of claim 26, wherein the crystal transition layer comprises aluminum nitride. Previously presented
An electronic system comprising: a board; and a microelectronic device attached to the board, wherein the microelectronic device includes at least one gallium nitride transistor comprising a gallium nitride layer, a charge inducing layer on the gallium nitride layer, a 2D electron gas within the gallium nitride layer, a source/drain structure including a single-crystal portion abutting the 2D electron gas, and a poly-crystal single-crystal portion of the source/drain structure amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with InGaN single-crystal source/drain (m-plane oriented)
GaN HEMT with GaN single-crystal source/drain (m-plane oriented)
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a side cross-section view of a gallium nitride transistor, according to an embodiment of the present description.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 3.4 eV | GaN |
Fet Mobility |
Related documents with shared materials, methods, properties, or citations.
GaN HEMT with polarization/crystal-transition charge inducing layer
GaN HEMT with single-crystal and poly-crystal source/drain
Electronic system with GaN transistor using InGaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using GaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using polarization/crystal-transition charge inducing layer
Electronic system with GaN transistor using single-crystal and poly-crystal source/drain
aluminum indium nitride
AlInN
indium nitride
InN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
GaN |
Fet Contact Resistance | 470 ohm-um | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
GaN HEMT with polarization/crystal-transition charge inducing layer
GaN HEMT with single-crystal and poly-crystal source/drain
Electronic system with GaN transistor using InGaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using GaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using polarization/crystal-transition charge inducing layer
Electronic system with GaN transistor using single-crystal and poly-crystal source/drain
aluminum indium nitride
AlInN
indium nitride
InN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
GaN |
Fet Contact Resistance | 470 ohm-um | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
GaN HEMT with polarization/crystal-transition charge inducing layer
GaN HEMT with single-crystal and poly-crystal source/drain
Electronic system with GaN transistor using InGaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using GaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using polarization/crystal-transition charge inducing layer
Electronic system with GaN transistor using single-crystal and poly-crystal source/drain
aluminum indium nitride
AlInN
indium nitride
InN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
GaN |
Fet Contact Resistance | 470 ohm-um | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
GaN HEMT with polarization/crystal-transition charge inducing layer
GaN HEMT with single-crystal and poly-crystal source/drain
Electronic system with GaN transistor using InGaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using GaN single-crystal source/drain (m-plane)
Electronic system with GaN transistor using polarization/crystal-transition charge inducing layer
Electronic system with GaN transistor using single-crystal and poly-crystal source/drain
aluminum indium nitride
AlInN
indium nitride
InN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
FIG. 2 is a side cross-section view of a gallium nitride transistor, according to another embodiment of the present description. P₇₁₆₅₅PCT FIGs. 3- 6 are side …
FIG. 9 is a flow chart of a process of fabricating a microelectronic structure, according to 5 an embodiment of the present description.
GaN |
Fet Contact Resistance | 470 ohm-um | — |
Thickness | ≤ 150 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |