Patent
US 9,225,009H₄V₃O₈
additional EAM nanoparticles
H₄-xV₃O₈/reduced graphene oxide composite electrode material
H₄-xV₃O₈ (x = 0.1–2.2)
H₄-xV₃O₈
reduced graphene oxide (RedGO)
H₂V₃O₈
carbon content in electrode material (claimed upper limit) |
| 10 wt% |
H₄-xV₃O₈ (x = 0.1–2.2) |
Temperature | ≤ 180 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | 1–50 nm | — |
Temperature | 25–180 °C | — |
Thickness | 3200–3600 cm | — |
Thickness | ≤ 20 nm | — |
Temperature | ≤ 200 °C | — |
H₄V₃O₈
additional EAM nanoparticles
H₄-xV₃O₈/reduced graphene oxide composite electrode material
H₄-xV₃O₈ (x = 0.1–2.2)
H₄-xV₃O₈
reduced graphene oxide (RedGO)
H₂V₃O₈
carbon content in electrode material (claimed upper limit) |
| 10 wt% |
H₄-xV₃O₈ (x = 0.1–2.2) |
Temperature | ≤ 180 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | 1–50 nm | — |
Temperature | 25–180 °C | — |
Thickness | 3200–3600 cm | — |
Thickness | ≤ 20 nm | — |
Temperature | ≤ 200 °C | — |
H₄V₃O₈
additional EAM nanoparticles
H₄-xV₃O₈/reduced graphene oxide composite electrode material
H₄-xV₃O₈ (x = 0.1–2.2)
H₄-xV₃O₈
reduced graphene oxide (RedGO)
H₂V₃O₈
carbon content in electrode material (claimed upper limit) |
| 10 wt% |
H₄-xV₃O₈ (x = 0.1–2.2) |
Temperature | ≤ 180 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | 1–50 nm | — |
Temperature | 25–180 °C | — |
Thickness | 3200–3600 cm | — |
Thickness | ≤ 20 nm | — |
Temperature | ≤ 200 °C | — |
H₄V₃O₈
additional EAM nanoparticles
H₄-xV₃O₈/reduced graphene oxide composite electrode material
H₄-xV₃O₈ (x = 0.1–2.2)
H₄-xV₃O₈
reduced graphene oxide (RedGO)
H₂V₃O₈
carbon content in electrode material (claimed upper limit) |
| 10 wt% |
H₄-xV₃O₈ (x = 0.1–2.2) |
Temperature | ≤ 180 °C | — |
Temperature | ≥ 50 °C | — |
Thickness | 1–50 nm | — |
Temperature | 25–180 °C | — |
Thickness | 3200–3600 cm | — |
Thickness | ≤ 20 nm | — |
Temperature | ≤ 200 °C | — |