Patent
US 8,519,406second thin film transistor with two-material source/drain electrodes
organic light emitting display panel (OLED)
transparent organic light emitting display device with transmitting and pixel regions
Mo
Al
Cu
ITO
IZO
ZnO
In₂O₃
SnO₂
AlZnOx
FIGS. 2 through 4, a top gate type transistor is 21 depicted as describing the present invention. However, the present invention is not limited Page 10 of 41 …
FIG. 4. 8 [0069] First, as the same as the switching transistor TR 1, the buffer layer 211 is 9 formed on the substrate I using an inorganic material such as a …
FIGS. 6 and 7, a sealing substrate and a sealing thin film layer are omitted 5 for convenience of explanation. I n addition, in F I GS. 6 and 7, a top gate type …
FIG. 7, a buffer layer 21 1 is formed on a substrate 1, and the 20 switching transistor TRI, the capacitor Cst, and the driving transistor TR₂ are formed on the …
second thin film transistor with two-material source/drain electrodes
organic light emitting display panel (OLED)
transparent organic light emitting display device with transmitting and pixel regions
Mo
Al
Cu
ITO
IZO
ZnO
In₂O₃
SnO₂
AlZnOx
FIGS. 2 through 4, a top gate type transistor is 21 depicted as describing the present invention. However, the present invention is not limited Page 10 of 41 …
FIG. 4. 8 [0069] First, as the same as the switching transistor TR 1, the buffer layer 211 is 9 formed on the substrate I using an inorganic material such as a …
FIGS. 6 and 7, a sealing substrate and a sealing thin film layer are omitted 5 for convenience of explanation. I n addition, in F I GS. 6 and 7, a top gate type …
FIG. 7, a buffer layer 21 1 is formed on a substrate 1, and the 20 switching transistor TRI, the capacitor Cst, and the driving transistor TR₂ are formed on the …
second thin film transistor with two-material source/drain electrodes
organic light emitting display panel (OLED)
transparent organic light emitting display device with transmitting and pixel regions
Mo
Al
Cu
ITO
IZO
ZnO
In₂O₃
SnO₂
AlZnOx
FIGS. 2 through 4, a top gate type transistor is 21 depicted as describing the present invention. However, the present invention is not limited Page 10 of 41 …
FIG. 4. 8 [0069] First, as the same as the switching transistor TR 1, the buffer layer 211 is 9 formed on the substrate I using an inorganic material such as a …
FIGS. 6 and 7, a sealing substrate and a sealing thin film layer are omitted 5 for convenience of explanation. I n addition, in F I GS. 6 and 7, a top gate type …
FIG. 7, a buffer layer 21 1 is formed on a substrate 1, and the 20 switching transistor TRI, the capacitor Cst, and the driving transistor TR₂ are formed on the …
second thin film transistor with two-material source/drain electrodes
organic light emitting display panel (OLED)
transparent organic light emitting display device with transmitting and pixel regions
Mo
Al
Cu
ITO
IZO
ZnO
In₂O₃
SnO₂
AlZnOx
FIGS. 2 through 4, a top gate type transistor is 21 depicted as describing the present invention. However, the present invention is not limited Page 10 of 41 …
FIG. 4. 8 [0069] First, as the same as the switching transistor TR 1, the buffer layer 211 is 9 formed on the substrate I using an inorganic material such as a …
FIGS. 6 and 7, a sealing substrate and a sealing thin film layer are omitted 5 for convenience of explanation. I n addition, in F I GS. 6 and 7, a top gate type …
FIG. 7, a buffer layer 21 1 is formed on a substrate 1, and the 20 switching transistor TRI, the capacitor Cst, and the driving transistor TR₂ are formed on the …