Patent
US 10,580,930GRAPHENE LIGHT EMITTING TRANSISTOR AND METHOD FOR THE FABRICATION THEREOF, ACTIVE GRAPHENE LIGHT EMITTING DISPLAY APPARATUS
Yong FAN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,580,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
FIG. 3 is a circuit diagram of pixels of an active graphene light emitting display apparatus according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-7 Canceled
Canceled
An active graphene light emitting light emitting display apparatus, comprising: a gate line, a data line, a color control voltage line, a power supply voltage line, a driving thin film transistor, a switching thin film transistor, a graphene light emitting transistor and a storage capacitor, wherein the graphene light emitting transistor comprising: a gate electrode disposed on a substrate; a gate insulating layer disposed on the substrate and the gate electrode; a source electrode and a drain electrode disposed on the gate insulating layer, wherein the source electrode and the drain electrode are formed by graphene; a graphene oxide layer disposed on the gate insulating layer and located between the source electrode and the drain electrode; a graphene quantum dot layer disposed on the graphene oxide layer, the source electrode and the drain electrode; and a water and oxygen resistant layer disposed on the graphene quantum dot layer; the gate lines and the data lines are insulated from each other and crossover-set; the color control voltage lines are parallel to the gate lines and are used to transmit the color control voltage; a gate electrode and a source electrode of the driving thin film transistor are connected to the gate line and the data line, respectively; a drain electrode of the driving thin film transistor is connected to a gate electrode of the switching thin film transistor; a source electrode of the switching thin film transistor is connected to the power supply voltage line, a drain electrode of the switching thin film transistor is connected to a source electrode of the graphene light emitting transistor; a gate electrode of the graphene light emitting transistor is connected to the color control voltage line, and a drain electrode of the graphene light emitting transistor is electrically connected to ground; one end of the storage capacitor is connected to the gate electrode of the switching thin film transistor, the other end of the storage capacitor is connected to the power supply voltage line. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the graphene light emitting transistor further comprising a protective layer disposed on the water and oxygen resistant layer. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the gate electrode is a composite metal layer and the reflectivity of the gate electrode is not less than 80 %. Original
Claims 11-16 Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate electrode reflectivity | ≥ 80 % | composite metal layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
FIG. 3 is a circuit diagram of pixels of an active graphene light emitting display apparatus according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-7 Canceled
Canceled
An active graphene light emitting light emitting display apparatus, comprising: a gate line, a data line, a color control voltage line, a power supply voltage line, a driving thin film transistor, a switching thin film transistor, a graphene light emitting transistor and a storage capacitor, wherein the graphene light emitting transistor comprising: a gate electrode disposed on a substrate; a gate insulating layer disposed on the substrate and the gate electrode; a source electrode and a drain electrode disposed on the gate insulating layer, wherein the source electrode and the drain electrode are formed by graphene; a graphene oxide layer disposed on the gate insulating layer and located between the source electrode and the drain electrode; a graphene quantum dot layer disposed on the graphene oxide layer, the source electrode and the drain electrode; and a water and oxygen resistant layer disposed on the graphene quantum dot layer; the gate lines and the data lines are insulated from each other and crossover-set; the color control voltage lines are parallel to the gate lines and are used to transmit the color control voltage; a gate electrode and a source electrode of the driving thin film transistor are connected to the gate line and the data line, respectively; a drain electrode of the driving thin film transistor is connected to a gate electrode of the switching thin film transistor; a source electrode of the switching thin film transistor is connected to the power supply voltage line, a drain electrode of the switching thin film transistor is connected to a source electrode of the graphene light emitting transistor; a gate electrode of the graphene light emitting transistor is connected to the color control voltage line, and a drain electrode of the graphene light emitting transistor is electrically connected to ground; one end of the storage capacitor is connected to the gate electrode of the switching thin film transistor, the other end of the storage capacitor is connected to the power supply voltage line. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the graphene light emitting transistor further comprising a protective layer disposed on the water and oxygen resistant layer. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the gate electrode is a composite metal layer and the reflectivity of the gate electrode is not less than 80 %. Original
Claims 11-16 Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate electrode reflectivity | ≥ 80 % | composite metal layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
FIG. 3 is a circuit diagram of pixels of an active graphene light emitting display apparatus according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-7 Canceled
Canceled
An active graphene light emitting light emitting display apparatus, comprising: a gate line, a data line, a color control voltage line, a power supply voltage line, a driving thin film transistor, a switching thin film transistor, a graphene light emitting transistor and a storage capacitor, wherein the graphene light emitting transistor comprising: a gate electrode disposed on a substrate; a gate insulating layer disposed on the substrate and the gate electrode; a source electrode and a drain electrode disposed on the gate insulating layer, wherein the source electrode and the drain electrode are formed by graphene; a graphene oxide layer disposed on the gate insulating layer and located between the source electrode and the drain electrode; a graphene quantum dot layer disposed on the graphene oxide layer, the source electrode and the drain electrode; and a water and oxygen resistant layer disposed on the graphene quantum dot layer; the gate lines and the data lines are insulated from each other and crossover-set; the color control voltage lines are parallel to the gate lines and are used to transmit the color control voltage; a gate electrode and a source electrode of the driving thin film transistor are connected to the gate line and the data line, respectively; a drain electrode of the driving thin film transistor is connected to a gate electrode of the switching thin film transistor; a source electrode of the switching thin film transistor is connected to the power supply voltage line, a drain electrode of the switching thin film transistor is connected to a source electrode of the graphene light emitting transistor; a gate electrode of the graphene light emitting transistor is connected to the color control voltage line, and a drain electrode of the graphene light emitting transistor is electrically connected to ground; one end of the storage capacitor is connected to the gate electrode of the switching thin film transistor, the other end of the storage capacitor is connected to the power supply voltage line. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the graphene light emitting transistor further comprising a protective layer disposed on the water and oxygen resistant layer. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the gate electrode is a composite metal layer and the reflectivity of the gate electrode is not less than 80 %. Original
Claims 11-16 Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate electrode reflectivity | ≥ 80 % | composite metal layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,580,930Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
FIG. 3 is a circuit diagram of pixels of an active graphene light emitting display apparatus according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-7 Canceled
Canceled
An active graphene light emitting light emitting display apparatus, comprising: a gate line, a data line, a color control voltage line, a power supply voltage line, a driving thin film transistor, a switching thin film transistor, a graphene light emitting transistor and a storage capacitor, wherein the graphene light emitting transistor comprising: a gate electrode disposed on a substrate; a gate insulating layer disposed on the substrate and the gate electrode; a source electrode and a drain electrode disposed on the gate insulating layer, wherein the source electrode and the drain electrode are formed by graphene; a graphene oxide layer disposed on the gate insulating layer and located between the source electrode and the drain electrode; a graphene quantum dot layer disposed on the graphene oxide layer, the source electrode and the drain electrode; and a water and oxygen resistant layer disposed on the graphene quantum dot layer; the gate lines and the data lines are insulated from each other and crossover-set; the color control voltage lines are parallel to the gate lines and are used to transmit the color control voltage; a gate electrode and a source electrode of the driving thin film transistor are connected to the gate line and the data line, respectively; a drain electrode of the driving thin film transistor is connected to a gate electrode of the switching thin film transistor; a source electrode of the switching thin film transistor is connected to the power supply voltage line, a drain electrode of the switching thin film transistor is connected to a source electrode of the graphene light emitting transistor; a gate electrode of the graphene light emitting transistor is connected to the color control voltage line, and a drain electrode of the graphene light emitting transistor is electrically connected to ground; one end of the storage capacitor is connected to the gate electrode of the switching thin film transistor, the other end of the storage capacitor is connected to the power supply voltage line. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the graphene light emitting transistor further comprising a protective layer disposed on the water and oxygen resistant layer. Original
The active graphene light emitting light emitting display apparatus according to claim 8, wherein the gate electrode is a composite metal layer and the reflectivity of the gate electrode is not less than 80 %. Original
Claims 11-16 Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present disclosure;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate electrode reflectivity | ≥ 80 % | composite metal layer |
Related documents with shared materials, methods, properties, or citations.
graphene quantum dots
protective layer material
composite metal layer
molybdenum aluminum alloy
aluminum silver alloy
copper molybdenum aluminum alloy
silicon oxide
SiO₂
silicon nitride
Si₃N₄
water and oxygen resistant layer
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene quantum dots
protective layer material
composite metal layer
molybdenum aluminum alloy
aluminum silver alloy
copper molybdenum aluminum alloy
silicon oxide
SiO₂
silicon nitride
Si₃N₄
water and oxygen resistant layer
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene quantum dots
protective layer material
composite metal layer
molybdenum aluminum alloy
aluminum silver alloy
copper molybdenum aluminum alloy
silicon oxide
SiO₂
silicon nitride
Si₃N₄
water and oxygen resistant layer
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene quantum dots
protective layer material
composite metal layer
molybdenum aluminum alloy
aluminum silver alloy
copper molybdenum aluminum alloy
silicon oxide
SiO₂
silicon nitride
Si₃N₄
water and oxygen resistant layer
FIGS. 2A to 2H are flowcharts for fabricating the graphene light emitting transistor according to an embodiment of the present disclosure; and