Patent
US 9,978,841GRAPHENE-BASED LAMINATE AND METHOD OF PREPARING THE SAME
ChongHan PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,978,841Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a graphene-based laminate according to an exemplary embodiment; [015]
FIG. 2 is a schematic view of a thermal chemical vapor deposition (CVD) device according to an exemplary embodiment; [016]
FIG. 3 is a schematic view of an organic light-emitting device according 3 to an exemplary embodiment; [017]
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application: LISTING OF CLAIMS: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.1.svg 0.16 4.57 Black and white a substrate; a graphene layer consisting of graphene formed directly on at least one surface of the substrate; and an inorganic layer formed directly on the graphene layer and comprising a fluorine- containing lithium compound, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm.
: The graphene-based laminate of claim 1, wherein an inorganic material included in the inorganic layer is represented by a following formula: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.2.svg 0.54 3.78 Black and white Original
: The graphene-based laminate of claim 1, wherein the inorganic material comprises at least one compound selected from LiF, LiF 2, LiF 3, Li 2 F, and Li 3 F 3. Original
: The graphene-based laminate of claim 1, wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 5 nm. Original
: The graphene-based laminate of claim 1, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The graphene-based laminate of claim 1, wherein the graphene layer has defects on a surface thereof. Original
: The graphene-based laminate of claim 1, wherein the substrate comprises at least one material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: An organic light emitting device comprising: a first electrode comprising the graphene-based laminate of claim 1; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ a second electrode. Original
: A transistor comprising: a gate layer; a substrate and an insulating layer formed above the gate layer; a source electrode and a drain electrode formed above the insulating layer; and the graphene-based laminate of claim 1 contacting the source electrode and the drain electrode and disposed therebetween. Original
. Canceled
(cu rr ently amended): A method of preparing a graphene-based laminate, the method comprising transfe rr ing a graphene layer consisting of graphene directly onto a target substrate to dispose the graphene layer directly on at least one surface of the target substrate; and depositing an inorganic layer including a fluorine-containing lithium compound directly on the disposed graphene layer, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm. Currently amended
: The method of claim 12, wherein the inorganic material included in the inorganic layer is represented by Formula 1: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.3.svg 0.54 3.78 Black and white Original
: The method of claim 12, wherein the graphene layer is grown on the substrate, on which graphene and graphitized catalyst layer are formed. Original
: The method of claim 12, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The method of claim 12, wherein the transferring the graphene layer to the target substrate further comprises etching the target substrate. Original
: The method of claim 12, wherein the target substrate comprises a material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: The method of claim 12, wherein the depositing the inorganic layer is performed by thermal chemical vapor deposition. Original
: The method of claim 12, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
. Canceled
: The graphene-based laminate of claim t, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based laminate
organic light emitting device
Materials described outside the worked examples.
graphene
fluorine-containing lithium compound
LixFy
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dielectric Constant | 9 | LiF |
Optical Band Gap | 13.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,978,841Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a graphene-based laminate according to an exemplary embodiment; [015]
FIG. 2 is a schematic view of a thermal chemical vapor deposition (CVD) device according to an exemplary embodiment; [016]
FIG. 3 is a schematic view of an organic light-emitting device according 3 to an exemplary embodiment; [017]
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application: LISTING OF CLAIMS: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.1.svg 0.16 4.57 Black and white a substrate; a graphene layer consisting of graphene formed directly on at least one surface of the substrate; and an inorganic layer formed directly on the graphene layer and comprising a fluorine- containing lithium compound, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm.
: The graphene-based laminate of claim 1, wherein an inorganic material included in the inorganic layer is represented by a following formula: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.2.svg 0.54 3.78 Black and white Original
: The graphene-based laminate of claim 1, wherein the inorganic material comprises at least one compound selected from LiF, LiF 2, LiF 3, Li 2 F, and Li 3 F 3. Original
: The graphene-based laminate of claim 1, wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 5 nm. Original
: The graphene-based laminate of claim 1, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The graphene-based laminate of claim 1, wherein the graphene layer has defects on a surface thereof. Original
: The graphene-based laminate of claim 1, wherein the substrate comprises at least one material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: An organic light emitting device comprising: a first electrode comprising the graphene-based laminate of claim 1; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ a second electrode. Original
: A transistor comprising: a gate layer; a substrate and an insulating layer formed above the gate layer; a source electrode and a drain electrode formed above the insulating layer; and the graphene-based laminate of claim 1 contacting the source electrode and the drain electrode and disposed therebetween. Original
. Canceled
(cu rr ently amended): A method of preparing a graphene-based laminate, the method comprising transfe rr ing a graphene layer consisting of graphene directly onto a target substrate to dispose the graphene layer directly on at least one surface of the target substrate; and depositing an inorganic layer including a fluorine-containing lithium compound directly on the disposed graphene layer, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm. Currently amended
: The method of claim 12, wherein the inorganic material included in the inorganic layer is represented by Formula 1: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.3.svg 0.54 3.78 Black and white Original
: The method of claim 12, wherein the graphene layer is grown on the substrate, on which graphene and graphitized catalyst layer are formed. Original
: The method of claim 12, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The method of claim 12, wherein the transferring the graphene layer to the target substrate further comprises etching the target substrate. Original
: The method of claim 12, wherein the target substrate comprises a material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: The method of claim 12, wherein the depositing the inorganic layer is performed by thermal chemical vapor deposition. Original
: The method of claim 12, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
. Canceled
: The graphene-based laminate of claim t, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based laminate
organic light emitting device
Materials described outside the worked examples.
graphene
fluorine-containing lithium compound
LixFy
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dielectric Constant | 9 | LiF |
Optical Band Gap | 13.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,978,841Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a graphene-based laminate according to an exemplary embodiment; [015]
FIG. 2 is a schematic view of a thermal chemical vapor deposition (CVD) device according to an exemplary embodiment; [016]
FIG. 3 is a schematic view of an organic light-emitting device according 3 to an exemplary embodiment; [017]
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application: LISTING OF CLAIMS: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.1.svg 0.16 4.57 Black and white a substrate; a graphene layer consisting of graphene formed directly on at least one surface of the substrate; and an inorganic layer formed directly on the graphene layer and comprising a fluorine- containing lithium compound, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm.
: The graphene-based laminate of claim 1, wherein an inorganic material included in the inorganic layer is represented by a following formula: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.2.svg 0.54 3.78 Black and white Original
: The graphene-based laminate of claim 1, wherein the inorganic material comprises at least one compound selected from LiF, LiF 2, LiF 3, Li 2 F, and Li 3 F 3. Original
: The graphene-based laminate of claim 1, wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 5 nm. Original
: The graphene-based laminate of claim 1, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The graphene-based laminate of claim 1, wherein the graphene layer has defects on a surface thereof. Original
: The graphene-based laminate of claim 1, wherein the substrate comprises at least one material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: An organic light emitting device comprising: a first electrode comprising the graphene-based laminate of claim 1; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ a second electrode. Original
: A transistor comprising: a gate layer; a substrate and an insulating layer formed above the gate layer; a source electrode and a drain electrode formed above the insulating layer; and the graphene-based laminate of claim 1 contacting the source electrode and the drain electrode and disposed therebetween. Original
. Canceled
(cu rr ently amended): A method of preparing a graphene-based laminate, the method comprising transfe rr ing a graphene layer consisting of graphene directly onto a target substrate to dispose the graphene layer directly on at least one surface of the target substrate; and depositing an inorganic layer including a fluorine-containing lithium compound directly on the disposed graphene layer, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm. Currently amended
: The method of claim 12, wherein the inorganic material included in the inorganic layer is represented by Formula 1: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.3.svg 0.54 3.78 Black and white Original
: The method of claim 12, wherein the graphene layer is grown on the substrate, on which graphene and graphitized catalyst layer are formed. Original
: The method of claim 12, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The method of claim 12, wherein the transferring the graphene layer to the target substrate further comprises etching the target substrate. Original
: The method of claim 12, wherein the target substrate comprises a material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: The method of claim 12, wherein the depositing the inorganic layer is performed by thermal chemical vapor deposition. Original
: The method of claim 12, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
. Canceled
: The graphene-based laminate of claim t, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based laminate
organic light emitting device
Materials described outside the worked examples.
graphene
fluorine-containing lithium compound
LixFy
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dielectric Constant | 9 | LiF |
Optical Band Gap | 13.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,978,841Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a graphene-based laminate according to an exemplary embodiment; [015]
FIG. 2 is a schematic view of a thermal chemical vapor deposition (CVD) device according to an exemplary embodiment; [016]
FIG. 3 is a schematic view of an organic light-emitting device according 3 to an exemplary embodiment; [017]
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application: LISTING OF CLAIMS: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.1.svg 0.16 4.57 Black and white a substrate; a graphene layer consisting of graphene formed directly on at least one surface of the substrate; and an inorganic layer formed directly on the graphene layer and comprising a fluorine- containing lithium compound, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm.
: The graphene-based laminate of claim 1, wherein an inorganic material included in the inorganic layer is represented by a following formula: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.2.svg 0.54 3.78 Black and white Original
: The graphene-based laminate of claim 1, wherein the inorganic material comprises at least one compound selected from LiF, LiF 2, LiF 3, Li 2 F, and Li 3 F 3. Original
: The graphene-based laminate of claim 1, wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 5 nm. Original
: The graphene-based laminate of claim 1, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The graphene-based laminate of claim 1, wherein the graphene layer has defects on a surface thereof. Original
: The graphene-based laminate of claim 1, wherein the substrate comprises at least one material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: An organic light emitting device comprising: a first electrode comprising the graphene-based laminate of claim 1; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₂₅₂₆₅ a second electrode. Original
: A transistor comprising: a gate layer; a substrate and an insulating layer formed above the gate layer; a source electrode and a drain electrode formed above the insulating layer; and the graphene-based laminate of claim 1 contacting the source electrode and the drain electrode and disposed therebetween. Original
. Canceled
(cu rr ently amended): A method of preparing a graphene-based laminate, the method comprising transfe rr ing a graphene layer consisting of graphene directly onto a target substrate to dispose the graphene layer directly on at least one surface of the target substrate; and depositing an inorganic layer including a fluorine-containing lithium compound directly on the disposed graphene layer, wherein the graphene layer is provided between the substrate and the inorganic layer, and the substrate and the inorganic layer are not in contact with each other, and wherein an average thickness of the inorganic layer is in a range of about 0.1 nm to about 10 nm. Currently amended
: The method of claim 12, wherein the inorganic material included in the inorganic layer is represented by Formula 1: SVG 15046920.07-21-2017.J₅EICQ₄₃RXEAPX5.CLM.3.svg 0.54 3.78 Black and white Original
: The method of claim 12, wherein the graphene layer is grown on the substrate, on which graphene and graphitized catalyst layer are formed. Original
: The method of claim 12, wherein the graphene layer comprises one layer or a plurality of layers less than or equal to ten layers. Original
: The method of claim 12, wherein the transferring the graphene layer to the target substrate further comprises etching the target substrate. Original
: The method of claim 12, wherein the target substrate comprises a material selected from a polymer-based material, a silica-based material, and a metal oxide-based material. Original
: The method of claim 12, wherein the depositing the inorganic layer is performed by thermal chemical vapor deposition. Original
: The method of claim 12, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
. Canceled
: The graphene-based laminate of claim t, wherein the graphene-based laminate consists of the substrate, the graphene layer and the inorganic layer. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based laminate
organic light emitting device
Materials described outside the worked examples.
graphene
fluorine-containing lithium compound
LixFy
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic view of a back-gated field-effect transistor (FET) according to an exemplary embodiment; [018]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dielectric Constant | 9 | LiF |
Optical Band Gap | 13.6 eV |
Related documents with shared materials, methods, properties, or citations.
transistor
substrate
LiF
LiF₂
LiF₃
Li₂F
Li₃F₃
indium tin oxide
ITO
indium zinc oxide
IZO
tin oxide
SnO₂
zinc oxide
ZnO
aluminum
Al
silver
Ag
magnesium
Mg
copper
Cu
nickel
Ni
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
LiF |
Thickness | 350–800 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Pressure | 0–5 torr | — |
Pressure | 0–7 torr | — |
Pressure | 1e-8 torr | — |
Pressure | 0–3 torr | — |
transistor
substrate
LiF
LiF₂
LiF₃
Li₂F
Li₃F₃
indium tin oxide
ITO
indium zinc oxide
IZO
tin oxide
SnO₂
zinc oxide
ZnO
aluminum
Al
silver
Ag
magnesium
Mg
copper
Cu
nickel
Ni
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
LiF |
Thickness | 350–800 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Pressure | 0–5 torr | — |
Pressure | 0–7 torr | — |
Pressure | 1e-8 torr | — |
Pressure | 0–3 torr | — |
transistor
substrate
LiF
LiF₂
LiF₃
Li₂F
Li₃F₃
indium tin oxide
ITO
indium zinc oxide
IZO
tin oxide
SnO₂
zinc oxide
ZnO
aluminum
Al
silver
Ag
magnesium
Mg
copper
Cu
nickel
Ni
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
LiF |
Thickness | 350–800 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Pressure | 0–5 torr | — |
Pressure | 0–7 torr | — |
Pressure | 1e-8 torr | — |
Pressure | 0–3 torr | — |
transistor
substrate
LiF
LiF₂
LiF₃
Li₂F
Li₃F₃
indium tin oxide
ITO
indium zinc oxide
IZO
tin oxide
SnO₂
zinc oxide
ZnO
aluminum
Al
silver
Ag
magnesium
Mg
copper
Cu
nickel
Ni
FIG. 5 is a graph of light transmittance measurement on graphene substrate laminates prepared in Reference Example 1 and Reference Comparative E xample 1; [019]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 6 shows a Raman spectrum of graphene substrate laminate channel layers of the back- gated FETs prepared in Example 5 and Comparative Example 2; [020]
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 7C is a graph showing/DS- V G S obtained when a drain source voltage (V DS = 0.3V) is applied to the back-gated FET prepared in Example 5 and the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
FIG. 8A is a graph showing V NP of a hole c harge with re spec t to a thickness of a LiF layer formed on a graphene layer of a graphene-based laminate in the …
LiF |
Thickness | 350–800 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.1–5 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Pressure | 0–5 torr | — |
Pressure | 0–7 torr | — |
Pressure | 1e-8 torr | — |
Pressure | 0–3 torr | — |