Patent
US 9,960,734Nano-Electro-Mechanical Systems Oscillator with Graphene Resonator
Changyao Chen
US
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Patent
Atlas literature
Patent
US 9,960,734Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano-electro-mechanical systems (NEMS) oscillator, comprising: [[a]] an insulating substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
The NEMS oscillator of claim 1, wherein the graphene resonator comprises a suspended strip of chemical vapor deposited (CVD) graphene. Original
The NEMS oscillator of claim 1, further comprising a clamping structure for suspending the graphene resonator. Original
The NEMS oscillator of claim 1, further comprising a clamping structure comprising SU-8 epoxy photoresist for suspending the graphene resonator and wherein the graphene resonator comprises a suspended strip of CVD graphene. Original
The NEMS oscillator of claim 1, further comprising a tuner for electrostatically tuning an operating frequency of the NEMS oscillator. Original
The NEMS oscillator of claim 1, wherein the vacuum gap is between about 50 and 200 nm. Original
The NEMS oscillator of claim 1, wherein the substrate comprises high- resistivity silicon. Original
The NEMS oscillator of claim 1, further comprising a variable gain amplifier and a tunable phase shifter Original
A frequency modulated (FM) signal generator comprising: a nano-electro-mechanical systems (NEMS) oscillator including a substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
Canceled
A method for fabricating a NEMS oscillator, comprising: growing CVD graphene on one or more copper foil substrates; transferring the CVD graphene to a pre-patte rn ed substrate; patterning a source electrode, a drain electrode, and a clamping structure; and releasing the graphene. Currently amended
The method of claim 14, wherein the pre-patterned substrate comprises high- resistivity silicon. Original
The method of claim 14, wherein patterning further comprises utilizing electron beam lithography. Original
The method of claim 14, wherein the clamping structure comprises SU-8 epoxy photoresist. Original
The method of claim 14, wherein releasing the graphene further comprises placing the NEMS oscillator into buffered oxide etchant (BO E). Original
The method of claim 14, wherein releasing the graphene further comprises forming a vacuum gap defined between the graphene and a gate electrode. Original
The method of claim 14, wherein the method comprises a fabrication yield of about 70 % or greater for the graphene. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
NEMS oscillator with suspended graphene resonator
FM signal generator with NEMS oscillator
Materials described outside the worked examples.
graphene
CVD graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic frequency tunability | 400 % | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,960,734Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano-electro-mechanical systems (NEMS) oscillator, comprising: [[a]] an insulating substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
The NEMS oscillator of claim 1, wherein the graphene resonator comprises a suspended strip of chemical vapor deposited (CVD) graphene. Original
The NEMS oscillator of claim 1, further comprising a clamping structure for suspending the graphene resonator. Original
The NEMS oscillator of claim 1, further comprising a clamping structure comprising SU-8 epoxy photoresist for suspending the graphene resonator and wherein the graphene resonator comprises a suspended strip of CVD graphene. Original
The NEMS oscillator of claim 1, further comprising a tuner for electrostatically tuning an operating frequency of the NEMS oscillator. Original
The NEMS oscillator of claim 1, wherein the vacuum gap is between about 50 and 200 nm. Original
The NEMS oscillator of claim 1, wherein the substrate comprises high- resistivity silicon. Original
The NEMS oscillator of claim 1, further comprising a variable gain amplifier and a tunable phase shifter Original
A frequency modulated (FM) signal generator comprising: a nano-electro-mechanical systems (NEMS) oscillator including a substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
Canceled
A method for fabricating a NEMS oscillator, comprising: growing CVD graphene on one or more copper foil substrates; transferring the CVD graphene to a pre-patte rn ed substrate; patterning a source electrode, a drain electrode, and a clamping structure; and releasing the graphene. Currently amended
The method of claim 14, wherein the pre-patterned substrate comprises high- resistivity silicon. Original
The method of claim 14, wherein patterning further comprises utilizing electron beam lithography. Original
The method of claim 14, wherein the clamping structure comprises SU-8 epoxy photoresist. Original
The method of claim 14, wherein releasing the graphene further comprises placing the NEMS oscillator into buffered oxide etchant (BO E). Original
The method of claim 14, wherein releasing the graphene further comprises forming a vacuum gap defined between the graphene and a gate electrode. Original
The method of claim 14, wherein the method comprises a fabrication yield of about 70 % or greater for the graphene. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
NEMS oscillator with suspended graphene resonator
FM signal generator with NEMS oscillator
Materials described outside the worked examples.
graphene
CVD graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic frequency tunability | 400 % | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,960,734Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano-electro-mechanical systems (NEMS) oscillator, comprising: [[a]] an insulating substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
The NEMS oscillator of claim 1, wherein the graphene resonator comprises a suspended strip of chemical vapor deposited (CVD) graphene. Original
The NEMS oscillator of claim 1, further comprising a clamping structure for suspending the graphene resonator. Original
The NEMS oscillator of claim 1, further comprising a clamping structure comprising SU-8 epoxy photoresist for suspending the graphene resonator and wherein the graphene resonator comprises a suspended strip of CVD graphene. Original
The NEMS oscillator of claim 1, further comprising a tuner for electrostatically tuning an operating frequency of the NEMS oscillator. Original
The NEMS oscillator of claim 1, wherein the vacuum gap is between about 50 and 200 nm. Original
The NEMS oscillator of claim 1, wherein the substrate comprises high- resistivity silicon. Original
The NEMS oscillator of claim 1, further comprising a variable gain amplifier and a tunable phase shifter Original
A frequency modulated (FM) signal generator comprising: a nano-electro-mechanical systems (NEMS) oscillator including a substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
Canceled
A method for fabricating a NEMS oscillator, comprising: growing CVD graphene on one or more copper foil substrates; transferring the CVD graphene to a pre-patte rn ed substrate; patterning a source electrode, a drain electrode, and a clamping structure; and releasing the graphene. Currently amended
The method of claim 14, wherein the pre-patterned substrate comprises high- resistivity silicon. Original
The method of claim 14, wherein patterning further comprises utilizing electron beam lithography. Original
The method of claim 14, wherein the clamping structure comprises SU-8 epoxy photoresist. Original
The method of claim 14, wherein releasing the graphene further comprises placing the NEMS oscillator into buffered oxide etchant (BO E). Original
The method of claim 14, wherein releasing the graphene further comprises forming a vacuum gap defined between the graphene and a gate electrode. Original
The method of claim 14, wherein the method comprises a fabrication yield of about 70 % or greater for the graphene. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
NEMS oscillator with suspended graphene resonator
FM signal generator with NEMS oscillator
Materials described outside the worked examples.
graphene
CVD graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic frequency tunability | 400 % | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,960,734Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano-electro-mechanical systems (NEMS) oscillator, comprising: [[a]] an insulating substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
The NEMS oscillator of claim 1, wherein the graphene resonator comprises a suspended strip of chemical vapor deposited (CVD) graphene. Original
The NEMS oscillator of claim 1, further comprising a clamping structure for suspending the graphene resonator. Original
The NEMS oscillator of claim 1, further comprising a clamping structure comprising SU-8 epoxy photoresist for suspending the graphene resonator and wherein the graphene resonator comprises a suspended strip of CVD graphene. Original
The NEMS oscillator of claim 1, further comprising a tuner for electrostatically tuning an operating frequency of the NEMS oscillator. Original
The NEMS oscillator of claim 1, wherein the vacuum gap is between about 50 and 200 nm. Original
The NEMS oscillator of claim 1, wherein the substrate comprises high- resistivity silicon. Original
The NEMS oscillator of claim 1, further comprising a variable gain amplifier and a tunable phase shifter Original
A frequency modulated (FM) signal generator comprising: a nano-electro-mechanical systems (NEMS) oscillator including a substrate; a source electrode and a drain electrode disposed on the substrate; a metal local gate electrode disposed on the substrate; and a micron-size, atomically thin graphene resonator suspended over the metal local gate electrode and defining a vacuum gap between the graphene resonator and the metal local gate electrode. Currently amended
Canceled
A method for fabricating a NEMS oscillator, comprising: growing CVD graphene on one or more copper foil substrates; transferring the CVD graphene to a pre-patte rn ed substrate; patterning a source electrode, a drain electrode, and a clamping structure; and releasing the graphene. Currently amended
The method of claim 14, wherein the pre-patterned substrate comprises high- resistivity silicon. Original
The method of claim 14, wherein patterning further comprises utilizing electron beam lithography. Original
The method of claim 14, wherein the clamping structure comprises SU-8 epoxy photoresist. Original
The method of claim 14, wherein releasing the graphene further comprises placing the NEMS oscillator into buffered oxide etchant (BO E). Original
The method of claim 14, wherein releasing the graphene further comprises forming a vacuum gap defined between the graphene and a gate electrode. Original
The method of claim 14, wherein the method comprises a fabrication yield of about 70 % or greater for the graphene. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
NEMS oscillator with suspended graphene resonator
FM signal generator with NEMS oscillator
Materials described outside the worked examples.
graphene
CVD graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic frequency tunability | 400 % | graphene |
Related documents with shared materials, methods, properties, or citations.
SU-8 epoxy photoresist
high-resistivity silicon
Si
copper foil
Cu
PECVD oxide
molybdenum disulfide
MoS₂
tungsten selenide
WSe₂
tungsten disulfide
WS₂
| 50–200 nm |
graphene |
circular graphene drum diameter | 2–4 µm | graphene |
graphene device fabrication yield | ≥ 70 % | CVD graphene |
SU-8 epoxy photoresist
high-resistivity silicon
Si
copper foil
Cu
PECVD oxide
molybdenum disulfide
MoS₂
tungsten selenide
WSe₂
tungsten disulfide
WS₂
| 50–200 nm |
graphene |
circular graphene drum diameter | 2–4 µm | graphene |
graphene device fabrication yield | ≥ 70 % | CVD graphene |
SU-8 epoxy photoresist
high-resistivity silicon
Si
copper foil
Cu
PECVD oxide
molybdenum disulfide
MoS₂
tungsten selenide
WSe₂
tungsten disulfide
WS₂
| 50–200 nm |
graphene |
circular graphene drum diameter | 2–4 µm | graphene |
graphene device fabrication yield | ≥ 70 % | CVD graphene |
SU-8 epoxy photoresist
high-resistivity silicon
Si
copper foil
Cu
PECVD oxide
molybdenum disulfide
MoS₂
tungsten selenide
WSe₂
tungsten disulfide
WS₂
| 50–200 nm |
graphene |
circular graphene drum diameter | 2–4 µm | graphene |
graphene device fabrication yield | ≥ 70 % | CVD graphene |