Patent
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Patent
US 12,520,605 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a MoSe₂/65 InGaN multispectral photoelectric detector according to the present disclosure, where, 1—substrate, …
FIG. 2 is a schematic top view of an electrode structure of a MoSe₂/InGaN multispectral photoelectric detector accord- ing to the present disclosure; and
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A molybdenum diselenide (MoSe₂)/InGaN multispec-tral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe₂ layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe₂ layer are arranged sequentially from bottom to top, wherein the MoSe₂ layer partially covers the InGaN layer; and the photoelectric detector further comprises a barrier layer and an electrode layer; the barrier layer is provided on the InGaN layer not covered by the MoSe₂ layer and on a part of the MoSe₂ layer; and the electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe₂ layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from B₂ bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe₂ layer has a thickness of 1 nm to 2 nm.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the substrate is a Si substrate; and the barrier layer is an Al₂O₃ barrier layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein that the MoSe₂ layer partially covers the InGaN layer indicates the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; and two ends of the MoSe₂ layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.
A preparation method of the MoSe₂/InGaN multispec-tral photoelectric detector according to claim 1, comprising the following steps: (1) growing the buffer layer on the substrate by metal organic chemical vapor deposition (MOCVD), and sequentially growing the InGaN layer and the MoSe₂ layer on the buffer layer by MOCVD; (2) etching the MoSe₂ layer, such that the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; performing photoetching on the stepwise horizontal stages on the InGaN layer and the MoSe₂ layer to obtain regions for evaporating the barrier layer; and preparing the barrier layer by evaporation; and (3) performing photoetching on each of the barrier layer and the MoSe₂ layer not covered by the barrier layer to obtain a region for evaporating a metal electrode; and evaporating the metal electrode on the barrier layer.
A method of using the MoSe₂/InGaN multispectral photoelectric detector according to claim 1, comprising: using the MoSe₂/InGaN multispectral photoelectric detector in blue and/or red multispectral photoelectric detection.
The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top; and the AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,100° C. to 1,200° C., a tem-perature of 1,100° C. to 1,200° C. and a temperature of 1,000° C. to 1,150° C.; and the InGaN layer and the MoSe₂ layer are grown on the buffer layer by MOCVD at a temperature of 600° C. to 750° C.
The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A MoSe₂/InGaN multispectral photoelectric detector is described with a Si substrate, AlN/AlGaN/GaN buffer layer grown by high-temperature MOCVD, and MoSe₂/InGaN functional layer grown by low-temperature MOCVD. The MoSe₂ layer forms stepwise horizontal stages on the InGaN layer. An Al₂O₃ barrier layer and Ti/Au interdigital electrode are prepared by photoetching and evaporation.
Layer stacks claimed or described, ordered top of device to substrate.
MoSe₂/InGaN multispectral photoelectric detector
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–200 nm | — |
Thickness | 1–2 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
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Patent
Atlas literature
Patent
US 12,520,605 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a MoSe₂/65 InGaN multispectral photoelectric detector according to the present disclosure, where, 1—substrate, …
FIG. 2 is a schematic top view of an electrode structure of a MoSe₂/InGaN multispectral photoelectric detector accord- ing to the present disclosure; and
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A molybdenum diselenide (MoSe₂)/InGaN multispec-tral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe₂ layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe₂ layer are arranged sequentially from bottom to top, wherein the MoSe₂ layer partially covers the InGaN layer; and the photoelectric detector further comprises a barrier layer and an electrode layer; the barrier layer is provided on the InGaN layer not covered by the MoSe₂ layer and on a part of the MoSe₂ layer; and the electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe₂ layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from B₂ bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe₂ layer has a thickness of 1 nm to 2 nm.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the substrate is a Si substrate; and the barrier layer is an Al₂O₃ barrier layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein that the MoSe₂ layer partially covers the InGaN layer indicates the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; and two ends of the MoSe₂ layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.
A preparation method of the MoSe₂/InGaN multispec-tral photoelectric detector according to claim 1, comprising the following steps: (1) growing the buffer layer on the substrate by metal organic chemical vapor deposition (MOCVD), and sequentially growing the InGaN layer and the MoSe₂ layer on the buffer layer by MOCVD; (2) etching the MoSe₂ layer, such that the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; performing photoetching on the stepwise horizontal stages on the InGaN layer and the MoSe₂ layer to obtain regions for evaporating the barrier layer; and preparing the barrier layer by evaporation; and (3) performing photoetching on each of the barrier layer and the MoSe₂ layer not covered by the barrier layer to obtain a region for evaporating a metal electrode; and evaporating the metal electrode on the barrier layer.
A method of using the MoSe₂/InGaN multispectral photoelectric detector according to claim 1, comprising: using the MoSe₂/InGaN multispectral photoelectric detector in blue and/or red multispectral photoelectric detection.
The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top; and the AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,100° C. to 1,200° C., a tem-perature of 1,100° C. to 1,200° C. and a temperature of 1,000° C. to 1,150° C.; and the InGaN layer and the MoSe₂ layer are grown on the buffer layer by MOCVD at a temperature of 600° C. to 750° C.
The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A MoSe₂/InGaN multispectral photoelectric detector is described with a Si substrate, AlN/AlGaN/GaN buffer layer grown by high-temperature MOCVD, and MoSe₂/InGaN functional layer grown by low-temperature MOCVD. The MoSe₂ layer forms stepwise horizontal stages on the InGaN layer. An Al₂O₃ barrier layer and Ti/Au interdigital electrode are prepared by photoetching and evaporation.
Layer stacks claimed or described, ordered top of device to substrate.
MoSe₂/InGaN multispectral photoelectric detector
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–200 nm | — |
Thickness | 1–2 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,520,605 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a MoSe₂/65 InGaN multispectral photoelectric detector according to the present disclosure, where, 1—substrate, …
FIG. 2 is a schematic top view of an electrode structure of a MoSe₂/InGaN multispectral photoelectric detector accord- ing to the present disclosure; and
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A molybdenum diselenide (MoSe₂)/InGaN multispec-tral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe₂ layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe₂ layer are arranged sequentially from bottom to top, wherein the MoSe₂ layer partially covers the InGaN layer; and the photoelectric detector further comprises a barrier layer and an electrode layer; the barrier layer is provided on the InGaN layer not covered by the MoSe₂ layer and on a part of the MoSe₂ layer; and the electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe₂ layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from B₂ bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe₂ layer has a thickness of 1 nm to 2 nm.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the substrate is a Si substrate; and the barrier layer is an Al₂O₃ barrier layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein that the MoSe₂ layer partially covers the InGaN layer indicates the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; and two ends of the MoSe₂ layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.
A preparation method of the MoSe₂/InGaN multispec-tral photoelectric detector according to claim 1, comprising the following steps: (1) growing the buffer layer on the substrate by metal organic chemical vapor deposition (MOCVD), and sequentially growing the InGaN layer and the MoSe₂ layer on the buffer layer by MOCVD; (2) etching the MoSe₂ layer, such that the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; performing photoetching on the stepwise horizontal stages on the InGaN layer and the MoSe₂ layer to obtain regions for evaporating the barrier layer; and preparing the barrier layer by evaporation; and (3) performing photoetching on each of the barrier layer and the MoSe₂ layer not covered by the barrier layer to obtain a region for evaporating a metal electrode; and evaporating the metal electrode on the barrier layer.
A method of using the MoSe₂/InGaN multispectral photoelectric detector according to claim 1, comprising: using the MoSe₂/InGaN multispectral photoelectric detector in blue and/or red multispectral photoelectric detection.
The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top; and the AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,100° C. to 1,200° C., a tem-perature of 1,100° C. to 1,200° C. and a temperature of 1,000° C. to 1,150° C.; and the InGaN layer and the MoSe₂ layer are grown on the buffer layer by MOCVD at a temperature of 600° C. to 750° C.
The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A MoSe₂/InGaN multispectral photoelectric detector is described with a Si substrate, AlN/AlGaN/GaN buffer layer grown by high-temperature MOCVD, and MoSe₂/InGaN functional layer grown by low-temperature MOCVD. The MoSe₂ layer forms stepwise horizontal stages on the InGaN layer. An Al₂O₃ barrier layer and Ti/Au interdigital electrode are prepared by photoetching and evaporation.
Layer stacks claimed or described, ordered top of device to substrate.
MoSe₂/InGaN multispectral photoelectric detector
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–200 nm | — |
Thickness | 1–2 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,520,605 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a MoSe₂/65 InGaN multispectral photoelectric detector according to the present disclosure, where, 1—substrate, …
FIG. 2 is a schematic top view of an electrode structure of a MoSe₂/InGaN multispectral photoelectric detector accord- ing to the present disclosure; and
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A molybdenum diselenide (MoSe₂)/InGaN multispec-tral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe₂ layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe₂ layer are arranged sequentially from bottom to top, wherein the MoSe₂ layer partially covers the InGaN layer; and the photoelectric detector further comprises a barrier layer and an electrode layer; the barrier layer is provided on the InGaN layer not covered by the MoSe₂ layer and on a part of the MoSe₂ layer; and the electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe₂ layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from B₂ bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe₂ layer has a thickness of 1 nm to 2 nm.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein the substrate is a Si substrate; and the barrier layer is an Al₂O₃ barrier layer.
The MoSe₂/InGaN multispectral photoelectric detector according to claim 1, wherein that the MoSe₂ layer partially covers the InGaN layer indicates the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; and two ends of the MoSe₂ layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.
A preparation method of the MoSe₂/InGaN multispec-tral photoelectric detector according to claim 1, comprising the following steps: (1) growing the buffer layer on the substrate by metal organic chemical vapor deposition (MOCVD), and sequentially growing the InGaN layer and the MoSe₂ layer on the buffer layer by MOCVD; (2) etching the MoSe₂ layer, such that the MoSe₂ layer forms stepwise horizontal stages on the InGaN layer; performing photoetching on the stepwise horizontal stages on the InGaN layer and the MoSe₂ layer to obtain regions for evaporating the barrier layer; and preparing the barrier layer by evaporation; and (3) performing photoetching on each of the barrier layer and the MoSe₂ layer not covered by the barrier layer to obtain a region for evaporating a metal electrode; and evaporating the metal electrode on the barrier layer.
A method of using the MoSe₂/InGaN multispectral photoelectric detector according to claim 1, comprising: using the MoSe₂/InGaN multispectral photoelectric detector in blue and/or red multispectral photoelectric detection.
The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top; and the AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,100° C. to 1,200° C., a tem-perature of 1,100° C. to 1,200° C. and a temperature of 1,000° C. to 1,150° C.; and the InGaN layer and the MoSe₂ layer are grown on the buffer layer by MOCVD at a temperature of 600° C. to 750° C.
The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials3 process steps
A MoSe₂/InGaN multispectral photoelectric detector is described with a Si substrate, AlN/AlGaN/GaN buffer layer grown by high-temperature MOCVD, and MoSe₂/InGaN functional layer grown by low-temperature MOCVD. The MoSe₂ layer forms stepwise horizontal stages on the InGaN layer. An Al₂O₃ barrier layer and Ti/Au interdigital electrode are prepared by photoetching and evaporation.
Layer stacks claimed or described, ordered top of device to substrate.
MoSe₂/InGaN multispectral photoelectric detector
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–200 nm | — |
Thickness | 1–2 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
| — |
Thickness | 350–450 nm | — |
Thickness | 650–700 nm | — |
Thickness | 4–5 µm | — |
Thickness | 20–30 nm | — |
Thickness | 100–110 nm | — |
Temperature | 1100–1200 °C | — |
Temperature | 1000–1150 °C | — |
Temperature | 600–750 °C | — |
Flow Rate | 30–40 sccm | — |
Cited non-patent literature · 2
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
| — |
Thickness | 350–450 nm | — |
Thickness | 650–700 nm | — |
Thickness | 4–5 µm | — |
Thickness | 20–30 nm | — |
Thickness | 100–110 nm | — |
Temperature | 1100–1200 °C | — |
Temperature | 1000–1150 °C | — |
Temperature | 600–750 °C | — |
Flow Rate | 30–40 sccm | — |
Cited non-patent literature · 2
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
| — |
Thickness | 350–450 nm | — |
Thickness | 650–700 nm | — |
Thickness | 4–5 µm | — |
Thickness | 20–30 nm | — |
Thickness | 100–110 nm | — |
Temperature | 1100–1200 °C | — |
Temperature | 1000–1150 °C | — |
Temperature | 600–750 °C | — |
Flow Rate | 30–40 sccm | — |
Cited non-patent literature · 2
FIG. 3 is an I-V curve graph of a MoSe₂/InGaN multi- spectral photoelectric detector prepared in Embodiment 1.
| — |
Thickness | 350–450 nm | — |
Thickness | 650–700 nm | — |
Thickness | 4–5 µm | — |
Thickness | 20–30 nm | — |
Thickness | 100–110 nm | — |
Temperature | 1100–1200 °C | — |
Temperature | 1000–1150 °C | — |
Temperature | 600–750 °C | — |
Flow Rate | 30–40 sccm | — |
Cited non-patent literature · 2
