Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3a√3 × 3a√3 × 3c GaN bulk supercell containing one Si substitution on a Ga site and one Ga vacancy, used to study vacancy-mediated Si diffusion in GaN.
6 properties
Simulated Supercell DftGaNStudied MaterialSiStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3a√3 × 3a√3 × 3c GaN bulk supercell containing one Si substitution on a Ga site and one Ga vacancy, used to study vacancy-mediated Si diffusion in GaN.
6 properties
Simulated Supercell DftGaNStudied MaterialSiStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3a√3 × 3a√3 × 3c GaN bulk supercell containing one Si substitution on a Ga site and one Ga vacancy, used to study vacancy-mediated Si diffusion in GaN.
6 properties
Simulated Supercell DftGaNStudied MaterialSiStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3a√3 × 3a√3 × 3c GaN bulk supercell containing one Si substitution on a Ga site and one Ga vacancy, used to study vacancy-mediated Si diffusion in GaN.
6 properties
Simulated Supercell DftGaNStudied MaterialSiStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.