GRAPHENE ON SEMICONDUCTOR DETECTOR

Francis J. Kub

Patent

Atlas literature

Patent

US 9,029,833

GRAPHENE ON SEMICONDUCTOR DETECTOR

Francis J. Kub, Karl Hobart, Travis Anderson

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

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Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

12 independent · 5 dependent

1
Independent
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2
Independent
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3
Independent
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4
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5
IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
T-appat f m- tctor a aratus co n rlsm a emiconductor struture with a f irst sur fac e; a yTa phon e l iv er dis o sed over at jeant aL)Cro on -, f t h~e f~ irst s u rfa ce oft the sem-ic ondui ctor st ruc ture and hav inz an ii er s u~ rfac e: wh ith a ﬁrst o nt ion c onnz ured to collec~t.r { ho rc-enera ie rrs -er-a ed wu hi n Tte semiconductor s tui re aing t o es tab] i.1a potential on t ﬁrst surface oft semiconductor structure:s a ﬁr st contact struc tu re e ldcricali co~nnectedi to the; semicondi uctor st ru c tur e an di a scond -conia ct st rciure electrically co jij ecte d ti ac sec ondi port on~ of th 1 uppe surface of h rahne Iat 'e wherein the ﬁrst and second contact structures are Thined on ath and Page 2 of 11 U.S. Application No. 14/471,001 Response to Oﬃce Action dated wherein the semiconductor structure is of a ﬁrst conductivity type and comprises an implanted or epitaxially grown region having a dopant concentration of the ﬁrst conductivity type greater than a dopant concentration of the remainder of the semiconductor structure, wherein the ﬁrst contact structure is an ohmic metal contact formed over at least a portion of an upper surface of the implanted or epitaxially grown region of the semiconductor structure.
6
IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with Schottky contact
appamsfca 4 detector aaratus conrising: a semiconductor structure with a ﬁrst surface; a japh~l ene layer disp ose d over at lea st a p~ on oi f the ﬁrsT suj- fac e, of the s wmiconductor structure and hang a isac th a ﬁrst fordon conﬁgured o coll-ct ? hoto e~ne rate dl carriers ae nerated w ithin the: se m~ icond ui ctor str uctu re and to establish a poentiai 'n the ﬁrst S urface of the semiconductor structure: a ﬁrst contact st ru. cture elec tr ical ly connected to the se mniccn ductor structure: and a second contact struct ulre electrica lly conn e ted to a seco n d o rtion of th e; u 2 er surt ace of Tbe rphn ivi wA herein thi e ﬁrst and second contact structures are for med on a to side o f the a aratus ' anid wherein the ﬁrst contact structure is a Schottky metal contact formed over a portion of the ﬁrst surface of the semiconductor structure, wherein the ﬁrst contact structure is laterally spaced from the graphene layer.
7
Independent
A detector a 3 aratus.
9
Dependent← claim 8semiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
The apparatus of claim 8, comprising a semiconductor epitaxial nucleation layer formed on a top side of the support substrate, wherein the semiconductor structure comprises an epitaxially grown semiconductor material formed over the nucleation layer.
10
IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
ppaats-e4 ± detector aparaf--s, conrisin a semiconductor structure with a ﬁrst surface a graptene -ia_'er disjj posed over a t, least a,o zriion oﬂ th~e ﬁrs t sul rface o f The h otognereatd cariers enerated wth in t he s e iconductor structure and to establish a o3tentitd on the f irst surface of t h e s emsico3 nduct o3r str uct ure:; a ﬁrst contact structure electrically conn e cted to the se~mi conductor str ui ctur e:; and a second. contact st ru ctur e eletricaly conn e ted t o a s co nd por t ion of the upp er surface ofp nhr~ pet lay er: wherein the semiconductor structure has a bandgap more than 2.5 electron volts.
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. canceled
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IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
Te-p us-dim4-A deveaor appara ts.compri s: Page 5 of 11 U.S. Application No. 14/471,001 Response to Oﬃce Action dated a s e~ miconductor str ii ctur e. with a ﬁrst surface; a raee Ia "cer lis ose pee d over at least a 2 orti o~ n of t h~e ﬁrst surface of the se imcn duci r s uucture and hang ppe surface with a f irst ri. conﬁ u ed to co lect photo 2enera ed carriers gee rat edc within the semiconductor structure and to establish a ﬁrst contact structure sectrical I connected to the semiconductor strutre: and a second c on tact struc t ure electrical lv connected t o a sec on d)ortio i of the a 3er surface of the gra ~ hene lay ery wherein the second contact structure and the ﬁrst contact structure have about the same voltage.
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IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
Th- apparata fdaim4-Ad ar s c 3 a semiconducvor stnuctre with a ﬁrst sur fac e; aL yra heu ne ia' er dl is osed over at lea st a 3 rti o n of the ﬁrst s u rface of the seL miconductor st i-t cture and havi nQ an upp er su rt ace wubt a ﬁrst por ti on ~o niuredl to Coll ect Pt r cigenr i£edcanitrs ge ner atedi whi n Tfte semi con ductor. str ucture anird t o es tab] i sh a potential on the ﬁrst surface of the sewiconductor structure: a ﬁ rst contact struc ture electicali co nectec to the; sem iconductor st rcc tur e and.
14
IndependentCsemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
A detector apparatus, comprising: an epitaxial semiconductor structure with a ﬁrst surface; Page 6 of 11 U.S. Application No. 14/471,001 Response to Oﬃce Action dated a graphene layer disposed directly on at least a portion of the ﬁrst surface of the semiconductor structure to form a heterojunction with the semiconductor structure, an upper surface of the graphene layer having a ﬁrst portion thereof conﬁgured to establish a potential on the ﬁrst surface of the semiconductor structure and to collect photogenerated carriers from the semiconductor structure; a ﬁrst contact structure electrically connected to the semiconductor structure; and a second contact structure electrically connected to a second portion of the upper surface of the graphene layer.
1. 15
  Dependent← claim 14Csemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
  The apparatus of claim 14, wherein the ﬁrst and second contact structures are formed on a top side of the apparatus.
2. 16
  Dependent← claim 14Csemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
  The apparatus of claim 14, wherein the semiconductor structure is of a ﬁrst conductivity type and comprises an implanted or epitaxially grown region having a dopant concentration of the ﬁrst conductivity type greater than a dopant concentration of the remainder of the semiconductor structure, wherein the ﬁrst contact structure is an ohmic metal contact formed over at least a portion of an upper surface of the implanted or epitaxially grown region of the semiconductor structure.
3. 17
  Dependent← claim 14Csemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with Schottky contact
  The apparatus of claim 14, wherein the ﬁrst contact structure is a Schottky metal contact formed over a portion of the ﬁrst surface of the semiconductor structure, wherein the ﬁrst contact structure is laterally spaced from the graphene layer.
4. 18
  Dependent← claim 14Csemiconductor structuregraphene-on-semiconductor UV/EUV photodetector with ohmic contact
  The apparatus of claim 14, comprising: a plurality of detector cells spaced from one another on the top side of the apparatus, with individual detector cells including: Page 7 of 11

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene-on-semiconductor UV/EUV photodetector with ohmic contact

Ctransparent electrode

semiconductor structureabsorber semiconductor

graphene-on-semiconductor UV/EUV photodetector with Schottky contact

Ctransparent electrode

semiconductor structureabsorber semiconductor

Materials

Materials described outside the worked examples.

graphene

Transparent Electrode Photocollector

Semiconductor Absorber Example

semiconductor structure

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
semiconductor bandgap > 2.5 eV (claimed minimum)	≥ 2.5 eV	semiconductor structure
graphene layer thickness upper bound	≤ 3 nm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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GRAPHENE-SEMICONDUCTOR BASED WAVELENGTH SELECTIVE PHOTODETECTOR FOR SUB-BANDGAP PHOTO DETECTION
device photodetectorproperty band gap

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