Patent
US 9,166,099GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Sung-won HWANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,166,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a graphene light-emitting device according to an embodiment of the present invention; [0033]
FIG. 2 as an example of a graphene superlattice of an active graphene; [0035]
FIG. 3 is an enlarged view of a region A of
FIGS. 4 to 6 illustrate other examples of the graphene superlattice of the active graphene; [0036]
FIG. 5, an active graphene 15" of a graphene light-emitting device 10" according to another embodiment of the present invention has such a band shape that at …
FIG. 6, an active graphene 15"' of a graphene light-emitting device 10"' according to another embodiment of the present invention includes nano-sized graphene …
FIGS. 7A to 7D are views for explaining a method of manufacturing a graphene light- emitting device, according to an embodiment of the present invention; [0037]
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 12 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0041]
FIG. 13 as an example of a graphene quantum dot of an active graphene; [0043]
FIG. 14 is an enlarged view of a region B of
FIG. 15 illustrates another example of the graphene quantum dot of the active graphene; [0044]
FIGS. 16A to 16 C illustrate examples of the graphene quantum dot; [0045]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 18 shows an example of a graphene oxide to which a functional group is attached; [0047]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
FIGS. 21A and 21B are views for explaining a method of manufacturing a graphene light- emitting device, according to another embodiment of the present …
FIG. 22 shows fourier-transform infra red (FT- I R) characteristics of graphene quantum dots to which aniline is attached; [0051]
FIG. 23 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0052]
FIG. 24 is a plan view of the graphene light-emitting device of
FIG. 25 is an enlarged view of a region C of
FIGS. 26 and 27 illustrate other examples of the active graphene.
FIG. 27, an active graphene 55" of a graphene light- emitting device 50" according to another embodiment of the present invention includes a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, and wherein the active graphene comprises a graphene superlattice.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has a multiple quantum well potential.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon having a band shape connecting the p-type graphene to the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon that extends parallel to boundaries of the p-type graphene and the n-type graphene between the p-type graphene and the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has periodically a rr anged quantum dot patterns.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the active graphene further comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene.
The graphene light-emitting device of claim 1, wherein the p-type graphene, the n-type graphene, and the active graphene are supported by a substrate.
The graphene light-emitting device of claim 1, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HN O3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the p-type graphene is horizontally spaced from the n-type graphene.
. canceled
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type g raphene and emits light, 5 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₂₆₆₉₇ App l n. No.: 13/234,739 wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene, and SVG 13234739.02-02-2015.I₅OBYWPWPXXIFW3.CLM.1.svg 0.15 5.31 Black and white alkylamine, aniline, methylene blue, or an amine-based polymer.
A method of manufacturing a graphene light-emitting device, the method comprising: preparing graphene; doping a p-type dopant on a first region of the graphene to form a p-type graphene; doping an n-type dopant on a second region of the graphene spaced apart from the first region to form an n-type graphene; and forming an active graphene in a region between the p-type graphene and the n-type graphene of graphene. withdrawn
The method of claim 27, wherein the forming of the active graphene comprises patterning the graphene to form a graphene superlattice. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises applying graphene quantum dots. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises attaching a functional group to a surface or edge of the active graphene. withdrawn
The method of claim 27, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HNO3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof. withdrawn
The method of claim 27, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene light-emitting device
Materials described outside the worked examples.
p-type graphene
n-type graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | 200–416 nm |
Related documents with shared materials, methods, properties, or citations.
BLOWOUT PREVENTERS MADE FROM PLASTIC ENHANCED WITH GRAPHENE, PHOSPHORESCENT OR OTHER MATERIAL, WITH SLEEVES THAT FIT INSIDE WELL PIPES, AND MAKING USE OF WELL PRESSURE
METHOD FOR THE PREPARATION OF POLYANILINE/REDUCED GRAPHENE OXIDE COMPOSITES
Patent
Atlas literature
Patent
US 9,166,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a graphene light-emitting device according to an embodiment of the present invention; [0033]
FIG. 2 as an example of a graphene superlattice of an active graphene; [0035]
FIG. 3 is an enlarged view of a region A of
FIGS. 4 to 6 illustrate other examples of the graphene superlattice of the active graphene; [0036]
FIG. 5, an active graphene 15" of a graphene light-emitting device 10" according to another embodiment of the present invention has such a band shape that at …
FIG. 6, an active graphene 15"' of a graphene light-emitting device 10"' according to another embodiment of the present invention includes nano-sized graphene …
FIGS. 7A to 7D are views for explaining a method of manufacturing a graphene light- emitting device, according to an embodiment of the present invention; [0037]
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 12 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0041]
FIG. 13 as an example of a graphene quantum dot of an active graphene; [0043]
FIG. 14 is an enlarged view of a region B of
FIG. 15 illustrates another example of the graphene quantum dot of the active graphene; [0044]
FIGS. 16A to 16 C illustrate examples of the graphene quantum dot; [0045]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 18 shows an example of a graphene oxide to which a functional group is attached; [0047]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
FIGS. 21A and 21B are views for explaining a method of manufacturing a graphene light- emitting device, according to another embodiment of the present …
FIG. 22 shows fourier-transform infra red (FT- I R) characteristics of graphene quantum dots to which aniline is attached; [0051]
FIG. 23 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0052]
FIG. 24 is a plan view of the graphene light-emitting device of
FIG. 25 is an enlarged view of a region C of
FIGS. 26 and 27 illustrate other examples of the active graphene.
FIG. 27, an active graphene 55" of a graphene light- emitting device 50" according to another embodiment of the present invention includes a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, and wherein the active graphene comprises a graphene superlattice.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has a multiple quantum well potential.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon having a band shape connecting the p-type graphene to the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon that extends parallel to boundaries of the p-type graphene and the n-type graphene between the p-type graphene and the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has periodically a rr anged quantum dot patterns.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the active graphene further comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene.
The graphene light-emitting device of claim 1, wherein the p-type graphene, the n-type graphene, and the active graphene are supported by a substrate.
The graphene light-emitting device of claim 1, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HN O3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the p-type graphene is horizontally spaced from the n-type graphene.
. canceled
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type g raphene and emits light, 5 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₂₆₆₉₇ App l n. No.: 13/234,739 wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene, and SVG 13234739.02-02-2015.I₅OBYWPWPXXIFW3.CLM.1.svg 0.15 5.31 Black and white alkylamine, aniline, methylene blue, or an amine-based polymer.
A method of manufacturing a graphene light-emitting device, the method comprising: preparing graphene; doping a p-type dopant on a first region of the graphene to form a p-type graphene; doping an n-type dopant on a second region of the graphene spaced apart from the first region to form an n-type graphene; and forming an active graphene in a region between the p-type graphene and the n-type graphene of graphene. withdrawn
The method of claim 27, wherein the forming of the active graphene comprises patterning the graphene to form a graphene superlattice. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises applying graphene quantum dots. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises attaching a functional group to a surface or edge of the active graphene. withdrawn
The method of claim 27, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HNO3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof. withdrawn
The method of claim 27, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene light-emitting device
Materials described outside the worked examples.
p-type graphene
n-type graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | 200–416 nm |
Related documents with shared materials, methods, properties, or citations.
BLOWOUT PREVENTERS MADE FROM PLASTIC ENHANCED WITH GRAPHENE, PHOSPHORESCENT OR OTHER MATERIAL, WITH SLEEVES THAT FIT INSIDE WELL PIPES, AND MAKING USE OF WELL PRESSURE
METHOD FOR THE PREPARATION OF POLYANILINE/REDUCED GRAPHENE OXIDE COMPOSITES
Patent
Atlas literature
Patent
US 9,166,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a graphene light-emitting device according to an embodiment of the present invention; [0033]
FIG. 2 as an example of a graphene superlattice of an active graphene; [0035]
FIG. 3 is an enlarged view of a region A of
FIGS. 4 to 6 illustrate other examples of the graphene superlattice of the active graphene; [0036]
FIG. 5, an active graphene 15" of a graphene light-emitting device 10" according to another embodiment of the present invention has such a band shape that at …
FIG. 6, an active graphene 15"' of a graphene light-emitting device 10"' according to another embodiment of the present invention includes nano-sized graphene …
FIGS. 7A to 7D are views for explaining a method of manufacturing a graphene light- emitting device, according to an embodiment of the present invention; [0037]
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 12 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0041]
FIG. 13 as an example of a graphene quantum dot of an active graphene; [0043]
FIG. 14 is an enlarged view of a region B of
FIG. 15 illustrates another example of the graphene quantum dot of the active graphene; [0044]
FIGS. 16A to 16 C illustrate examples of the graphene quantum dot; [0045]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 18 shows an example of a graphene oxide to which a functional group is attached; [0047]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
FIGS. 21A and 21B are views for explaining a method of manufacturing a graphene light- emitting device, according to another embodiment of the present …
FIG. 22 shows fourier-transform infra red (FT- I R) characteristics of graphene quantum dots to which aniline is attached; [0051]
FIG. 23 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0052]
FIG. 24 is a plan view of the graphene light-emitting device of
FIG. 25 is an enlarged view of a region C of
FIGS. 26 and 27 illustrate other examples of the active graphene.
FIG. 27, an active graphene 55" of a graphene light- emitting device 50" according to another embodiment of the present invention includes a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, and wherein the active graphene comprises a graphene superlattice.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has a multiple quantum well potential.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon having a band shape connecting the p-type graphene to the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon that extends parallel to boundaries of the p-type graphene and the n-type graphene between the p-type graphene and the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has periodically a rr anged quantum dot patterns.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the active graphene further comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene.
The graphene light-emitting device of claim 1, wherein the p-type graphene, the n-type graphene, and the active graphene are supported by a substrate.
The graphene light-emitting device of claim 1, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HN O3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the p-type graphene is horizontally spaced from the n-type graphene.
. canceled
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type g raphene and emits light, 5 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₂₆₆₉₇ App l n. No.: 13/234,739 wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene, and SVG 13234739.02-02-2015.I₅OBYWPWPXXIFW3.CLM.1.svg 0.15 5.31 Black and white alkylamine, aniline, methylene blue, or an amine-based polymer.
A method of manufacturing a graphene light-emitting device, the method comprising: preparing graphene; doping a p-type dopant on a first region of the graphene to form a p-type graphene; doping an n-type dopant on a second region of the graphene spaced apart from the first region to form an n-type graphene; and forming an active graphene in a region between the p-type graphene and the n-type graphene of graphene. withdrawn
The method of claim 27, wherein the forming of the active graphene comprises patterning the graphene to form a graphene superlattice. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises applying graphene quantum dots. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises attaching a functional group to a surface or edge of the active graphene. withdrawn
The method of claim 27, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HNO3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof. withdrawn
The method of claim 27, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene light-emitting device
Materials described outside the worked examples.
p-type graphene
n-type graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | 200–416 nm |
Related documents with shared materials, methods, properties, or citations.
BLOWOUT PREVENTERS MADE FROM PLASTIC ENHANCED WITH GRAPHENE, PHOSPHORESCENT OR OTHER MATERIAL, WITH SLEEVES THAT FIT INSIDE WELL PIPES, AND MAKING USE OF WELL PRESSURE
METHOD FOR THE PREPARATION OF POLYANILINE/REDUCED GRAPHENE OXIDE COMPOSITES
Patent
Atlas literature
Patent
US 9,166,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a graphene light-emitting device according to an embodiment of the present invention; [0033]
FIG. 2 as an example of a graphene superlattice of an active graphene; [0035]
FIG. 3 is an enlarged view of a region A of
FIGS. 4 to 6 illustrate other examples of the graphene superlattice of the active graphene; [0036]
FIG. 5, an active graphene 15" of a graphene light-emitting device 10" according to another embodiment of the present invention has such a band shape that at …
FIG. 6, an active graphene 15"' of a graphene light-emitting device 10"' according to another embodiment of the present invention includes nano-sized graphene …
FIGS. 7A to 7D are views for explaining a method of manufacturing a graphene light- emitting device, according to an embodiment of the present invention; [0037]
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 12 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0041]
FIG. 13 as an example of a graphene quantum dot of an active graphene; [0043]
FIG. 14 is an enlarged view of a region B of
FIG. 15 illustrates another example of the graphene quantum dot of the active graphene; [0044]
FIGS. 16A to 16 C illustrate examples of the graphene quantum dot; [0045]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 18 shows an example of a graphene oxide to which a functional group is attached; [0047]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
FIGS. 21A and 21B are views for explaining a method of manufacturing a graphene light- emitting device, according to another embodiment of the present …
FIG. 22 shows fourier-transform infra red (FT- I R) characteristics of graphene quantum dots to which aniline is attached; [0051]
FIG. 23 is a side view of a graphene light-emitting device according to another embodiment of the present invention; [0052]
FIG. 24 is a plan view of the graphene light-emitting device of
FIG. 25 is an enlarged view of a region C of
FIGS. 26 and 27 illustrate other examples of the active graphene.
FIG. 27, an active graphene 55" of a graphene light- emitting device 50" according to another embodiment of the present invention includes a graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, and wherein the active graphene comprises a graphene superlattice.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has a multiple quantum well potential.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon having a band shape connecting the p-type graphene to the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice comprises at least one graphene nanoribbon that extends parallel to boundaries of the p-type graphene and the n-type graphene between the p-type graphene and the n-type graphene.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the graphene superlattice has periodically a rr anged quantum dot patterns.
The graphene light-emitting device of -dlahn-2 claim 1, wherein the active graphene further comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene comprises a plurality of graphene quantum dots dispersed between the p-type graphene and the n-type graphene.
The graphene light-emitting device of claim 1, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene.
The graphene light-emitting device of claim 1, wherein the p-type graphene, the n-type graphene, and the active graphene are supported by a substrate.
The graphene light-emitting device of claim 1, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HN O3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof.
The graphene light-emitting device of claim 1, wherein the p-type graphene is horizontally spaced from the n-type graphene.
. canceled
A graphene light-emitting device comprising: a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the p-type graphene and the n-type g raphene and emits light, 5 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₂₆₆₉₇ App l n. No.: 13/234,739 wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed, wherein the active graphene is a graphene that is functionalized by attaching a functional group to a surface or edge of the graphene, and SVG 13234739.02-02-2015.I₅OBYWPWPXXIFW3.CLM.1.svg 0.15 5.31 Black and white alkylamine, aniline, methylene blue, or an amine-based polymer.
A method of manufacturing a graphene light-emitting device, the method comprising: preparing graphene; doping a p-type dopant on a first region of the graphene to form a p-type graphene; doping an n-type dopant on a second region of the graphene spaced apart from the first region to form an n-type graphene; and forming an active graphene in a region between the p-type graphene and the n-type graphene of graphene. withdrawn
The method of claim 27, wherein the forming of the active graphene comprises patterning the graphene to form a graphene superlattice. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises applying graphene quantum dots. withdrawn
The method of claim 27, wherein the forming of the active graphene further comprises attaching a functional group to a surface or edge of the active graphene. withdrawn
The method of claim 27, wherein the p-type dopant is at least one element selected from the group consisting of oxygen (0), gold (Au), and bismuth (Bi); at least one compound selected from the group consisting of CH₃N O 2, HNO3, HAuC l 4, H₂S O 4, HCl, and AuC l 3; or a mixture thereof. withdrawn
The method of claim 27, wherein the n-type dopant is at least one element selected from the group consisting of nitrogen (N), fluorine (F), and manganese (Mn); NH3; or a mixture thereof. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene light-emitting device
Materials described outside the worked examples.
p-type graphene
n-type graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a schematic view of a graphene field effect transistor (FET) manufactured to identify electrical characteristics of a p-type graphene and an n-type …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | 200–416 nm |
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BLOWOUT PREVENTERS MADE FROM PLASTIC ENHANCED WITH GRAPHENE, PHOSPHORESCENT OR OTHER MATERIAL, WITH SLEEVES THAT FIT INSIDE WELL PIPES, AND MAKING USE OF WELL PRESSURE
METHOD FOR THE PREPARATION OF POLYANILINE/REDUCED GRAPHENE OXIDE COMPOSITES
graphene superlattice
graphene nanoribbon
graphene quantum dots
functionalized graphene
graphene oxide
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
| — |
Thickness | 5–10 nm | — |
Thickness | 25–35 nm | — |
Thickness | 0–2 cm | — |
Thickness | 0–5 cm | — |
Thickness | 10–20 cm | — |
Thickness | ≥ 0.1 nm | — |
Thickness | 3–20 nm | — |
Thickness | 2–19 nm | — |
Thickness | 2–15 nm | — |
Thickness | 0.00001 cm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene superlattice
graphene nanoribbon
graphene quantum dots
functionalized graphene
graphene oxide
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
| — |
Thickness | 5–10 nm | — |
Thickness | 25–35 nm | — |
Thickness | 0–2 cm | — |
Thickness | 0–5 cm | — |
Thickness | 10–20 cm | — |
Thickness | ≥ 0.1 nm | — |
Thickness | 3–20 nm | — |
Thickness | 2–19 nm | — |
Thickness | 2–15 nm | — |
Thickness | 0.00001 cm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene superlattice
graphene nanoribbon
graphene quantum dots
functionalized graphene
graphene oxide
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
| — |
Thickness | 5–10 nm | — |
Thickness | 25–35 nm | — |
Thickness | 0–2 cm | — |
Thickness | 0–5 cm | — |
Thickness | 10–20 cm | — |
Thickness | ≥ 0.1 nm | — |
Thickness | 3–20 nm | — |
Thickness | 2–19 nm | — |
Thickness | 2–15 nm | — |
Thickness | 0.00001 cm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene superlattice
graphene nanoribbon
graphene quantum dots
functionalized graphene
graphene oxide
FIGS. 9 and 10 show electrical characteristics of the p-type graphene and the n- type graphene; [0039]
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIGS. 10 and 18. In the present embodiment, the photoluminescence efficiency of the active graphene 55 may be increased by combining a quantum efficiency increase …
FIG. 11 shows photoluminescence characteristics of a graphene light-emitting device; [0040]
FIG. 17 shows a wavelength absorption characteristic according to the size and shape of the graphene quantum dot; [0046]
FIG. 19 shows photoluminescence characteristics of a graphene quantum dot to which aniline is attached; [0048]
FIG. 20 shows photoluminescence characteristics of a graphene quantum dot to which polyethylene glycol (PEG) is attached; [0049]
| — |
Thickness | 5–10 nm | — |
Thickness | 25–35 nm | — |
Thickness | 0–2 cm | — |
Thickness | 0–5 cm | — |
Thickness | 10–20 cm | — |
Thickness | ≥ 0.1 nm | — |
Thickness | 3–20 nm | — |
Thickness | 2–19 nm | — |
Thickness | 2–15 nm | — |
Thickness | 0.00001 cm | — |