Patent
US 9,741,796GRAPHENE-BASED VALLEY FILTER AND METHOD FOR OPERATING THE SAME
Yu-Shu WU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,741,796Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based valley filter, comprising: a bottom gate; a bilayer graphene deposited on the bottom gate, wherein the bilayer graphene comprises scattering defects; and two top gates deposited on the bilayer graphene, wherein the two top gates define a channel in the bilayer graphene, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to open a band gap as well as produce electronic energy subbands [[inthe]]in the bilayer graphene channel, a transverse in-plane electric field is formed ap D lied between the top gates to produce pseudospin splitting in the subbands of the bilayer graphene channel, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the bilayer graphene, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the bilayer graphene. 2
The device of claim 1, wherein the channel is in the form of a quantum wire or a nanoribbon.
(Original) The device of claim 1, wherein the scattering defects are formed by rough edges of the bilayer graphene in the vicinity of the channel.
The device of claim 1, wherein the scattering defects are formed by performing ion implantation to the bilayer graphene in the vicinity of the channel.
(Original) The device of claim 1, wherein the scattering defects are formed from graphene oxide in the vicinity of the channel.
(Original) The device of claim 1, wherein the bilayer graphene comprise a first layer and a second layer, the first layer is stacked on the second layer with a normal stacking distance, and the second layer is rotated with respect to the first layer by a specified angle. 3
(Original) The device of claim 1, further comprising an insulation layer deposited between the top gates and the bilayer graphene and between the bilayer graphene and the bottom gate.
The device of claim 1, wherein the vertical electric field is formed by applying a DC bias across the bottom gate and the top gates.
9-12 canceled
canceled
canceled
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A graphene-based valley filter, comprising: a bottom gate; a boron nitride layer deposited on the bottom gate; a monolayer graphene formed on the boron nitride layer, wherein the graphene layer comprises scattering defects; and two top gates formed on the graphene layer, wherein the two top gates define a channel in the graphene layer/boron nitride layer structure, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to produce electronic energy subbands in the 4 graphene layer, a transverse in-plane electric field is formed applied between the top gates to produce pseudospin splitting in the energy subbands of the graphene layer, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the graphene layer, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the graphene layer.
(Original) The device of claim 13, wherein the boron nitride layer is hexagonal.
(Original) The device of claim 13, wherein the graphene layer is stacked on the boron nitride layer with a normal stacking distance, and the graphene layer is rotated with respect to the boron nitride layer by a specified angle.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based valley filter (bilayer graphene)
graphene-based valley filter (monolayer graphene on boron nitride)
Materials described outside the worked examples.
bilayer graphene
bilayer graphene with A-B Bernal stacking
graphene oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,796Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based valley filter, comprising: a bottom gate; a bilayer graphene deposited on the bottom gate, wherein the bilayer graphene comprises scattering defects; and two top gates deposited on the bilayer graphene, wherein the two top gates define a channel in the bilayer graphene, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to open a band gap as well as produce electronic energy subbands [[inthe]]in the bilayer graphene channel, a transverse in-plane electric field is formed ap D lied between the top gates to produce pseudospin splitting in the subbands of the bilayer graphene channel, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the bilayer graphene, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the bilayer graphene. 2
The device of claim 1, wherein the channel is in the form of a quantum wire or a nanoribbon.
(Original) The device of claim 1, wherein the scattering defects are formed by rough edges of the bilayer graphene in the vicinity of the channel.
The device of claim 1, wherein the scattering defects are formed by performing ion implantation to the bilayer graphene in the vicinity of the channel.
(Original) The device of claim 1, wherein the scattering defects are formed from graphene oxide in the vicinity of the channel.
(Original) The device of claim 1, wherein the bilayer graphene comprise a first layer and a second layer, the first layer is stacked on the second layer with a normal stacking distance, and the second layer is rotated with respect to the first layer by a specified angle. 3
(Original) The device of claim 1, further comprising an insulation layer deposited between the top gates and the bilayer graphene and between the bilayer graphene and the bottom gate.
The device of claim 1, wherein the vertical electric field is formed by applying a DC bias across the bottom gate and the top gates.
9-12 canceled
canceled
canceled
canceled
A graphene-based valley filter, comprising: a bottom gate; a boron nitride layer deposited on the bottom gate; a monolayer graphene formed on the boron nitride layer, wherein the graphene layer comprises scattering defects; and two top gates formed on the graphene layer, wherein the two top gates define a channel in the graphene layer/boron nitride layer structure, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to produce electronic energy subbands in the 4 graphene layer, a transverse in-plane electric field is formed applied between the top gates to produce pseudospin splitting in the energy subbands of the graphene layer, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the graphene layer, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the graphene layer.
(Original) The device of claim 13, wherein the boron nitride layer is hexagonal.
(Original) The device of claim 13, wherein the graphene layer is stacked on the boron nitride layer with a normal stacking distance, and the graphene layer is rotated with respect to the boron nitride layer by a specified angle.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based valley filter (bilayer graphene)
graphene-based valley filter (monolayer graphene on boron nitride)
Materials described outside the worked examples.
bilayer graphene
bilayer graphene with A-B Bernal stacking
graphene oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,796Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based valley filter, comprising: a bottom gate; a bilayer graphene deposited on the bottom gate, wherein the bilayer graphene comprises scattering defects; and two top gates deposited on the bilayer graphene, wherein the two top gates define a channel in the bilayer graphene, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to open a band gap as well as produce electronic energy subbands [[inthe]]in the bilayer graphene channel, a transverse in-plane electric field is formed ap D lied between the top gates to produce pseudospin splitting in the subbands of the bilayer graphene channel, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the bilayer graphene, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the bilayer graphene. 2
The device of claim 1, wherein the channel is in the form of a quantum wire or a nanoribbon.
(Original) The device of claim 1, wherein the scattering defects are formed by rough edges of the bilayer graphene in the vicinity of the channel.
The device of claim 1, wherein the scattering defects are formed by performing ion implantation to the bilayer graphene in the vicinity of the channel.
(Original) The device of claim 1, wherein the scattering defects are formed from graphene oxide in the vicinity of the channel.
(Original) The device of claim 1, wherein the bilayer graphene comprise a first layer and a second layer, the first layer is stacked on the second layer with a normal stacking distance, and the second layer is rotated with respect to the first layer by a specified angle. 3
(Original) The device of claim 1, further comprising an insulation layer deposited between the top gates and the bilayer graphene and between the bilayer graphene and the bottom gate.
The device of claim 1, wherein the vertical electric field is formed by applying a DC bias across the bottom gate and the top gates.
9-12 canceled
canceled
canceled
canceled
A graphene-based valley filter, comprising: a bottom gate; a boron nitride layer deposited on the bottom gate; a monolayer graphene formed on the boron nitride layer, wherein the graphene layer comprises scattering defects; and two top gates formed on the graphene layer, wherein the two top gates define a channel in the graphene layer/boron nitride layer structure, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to produce electronic energy subbands in the 4 graphene layer, a transverse in-plane electric field is formed applied between the top gates to produce pseudospin splitting in the energy subbands of the graphene layer, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the graphene layer, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the graphene layer.
(Original) The device of claim 13, wherein the boron nitride layer is hexagonal.
(Original) The device of claim 13, wherein the graphene layer is stacked on the boron nitride layer with a normal stacking distance, and the graphene layer is rotated with respect to the boron nitride layer by a specified angle.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based valley filter (bilayer graphene)
graphene-based valley filter (monolayer graphene on boron nitride)
Materials described outside the worked examples.
bilayer graphene
bilayer graphene with A-B Bernal stacking
graphene oxide
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,796Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based valley filter, comprising: a bottom gate; a bilayer graphene deposited on the bottom gate, wherein the bilayer graphene comprises scattering defects; and two top gates deposited on the bilayer graphene, wherein the two top gates define a channel in the bilayer graphene, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to open a band gap as well as produce electronic energy subbands [[inthe]]in the bilayer graphene channel, a transverse in-plane electric field is formed ap D lied between the top gates to produce pseudospin splitting in the subbands of the bilayer graphene channel, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the bilayer graphene, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the bilayer graphene. 2
The device of claim 1, wherein the channel is in the form of a quantum wire or a nanoribbon.
(Original) The device of claim 1, wherein the scattering defects are formed by rough edges of the bilayer graphene in the vicinity of the channel.
The device of claim 1, wherein the scattering defects are formed by performing ion implantation to the bilayer graphene in the vicinity of the channel.
(Original) The device of claim 1, wherein the scattering defects are formed from graphene oxide in the vicinity of the channel.
(Original) The device of claim 1, wherein the bilayer graphene comprise a first layer and a second layer, the first layer is stacked on the second layer with a normal stacking distance, and the second layer is rotated with respect to the first layer by a specified angle. 3
(Original) The device of claim 1, further comprising an insulation layer deposited between the top gates and the bilayer graphene and between the bilayer graphene and the bottom gate.
The device of claim 1, wherein the vertical electric field is formed by applying a DC bias across the bottom gate and the top gates.
9-12 canceled
canceled
canceled
canceled
A graphene-based valley filter, comprising: a bottom gate; a boron nitride layer deposited on the bottom gate; a monolayer graphene formed on the boron nitride layer, wherein the graphene layer comprises scattering defects; and two top gates formed on the graphene layer, wherein the two top gates define a channel in the graphene layer/boron nitride layer structure, and the scattering defects are located in the vicinity of the channel; wherein a vertical electric field is formed applied between the bottom gate and the top gates to produce electronic energy subbands in the 4 graphene layer, a transverse in-plane electric field is formed applied between the top gates to produce pseudospin splitting in the energy subbands of the graphene layer, the scattering defects are configured to produce a scattering between two energy valley states with opposite pseudospins in the graphene layer, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and when a small bias is applied, electrons are passed driven to pass through the channel to become valley polarized in the graphene layer.
(Original) The device of claim 13, wherein the boron nitride layer is hexagonal.
(Original) The device of claim 13, wherein the graphene layer is stacked on the boron nitride layer with a normal stacking distance, and the graphene layer is rotated with respect to the boron nitride layer by a specified angle.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based valley filter (bilayer graphene)
graphene-based valley filter (monolayer graphene on boron nitride)
Materials described outside the worked examples.
bilayer graphene
bilayer graphene with A-B Bernal stacking
graphene oxide
Related documents with shared materials, methods, properties, or citations.
monolayer graphene
boron nitride
BN
monolayer graphene
boron nitride
BN
monolayer graphene
boron nitride
BN
monolayer graphene
boron nitride
BN