Patent
US 9,929,238METHOD OF FORMING GRAPHENE NANOPATTERN, GRAPHENE-CONTAINING DEVICE, AND METHOD OF MANUFACTURING THE GRAPHENE-CONTAINING DEVICE
Seongjun JEONG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,929,238Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 E are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0044]
FIGS. 2A-2C are perspective views for explaining a method of forming a block copolymer layer illustrated in
FIG. 3 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0046]
FIG. 4 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0047]
FIGS. 5A-5D are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0048]
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 8 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0051]
FIG. 9 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; Atty. Dkt. No. 2557S I …
FIG. 10 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0053]
FIG. 11 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0054]
FIG. 12 is a cross-sectional view showing a case where a block copolymer layer is formed on a plurality of graphene layers illustrated in
FIG. 13 is an SEM image showing a structure corresponding to
FIG. 14 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0057]
FIGS. 15A-15C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0058]
FIGS. 16A and 16B are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0059]
FIGS. 17A-17C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0060]
FIG. 18 is a plan view for explaining a graphene-containing device according to example embodiments; [0061]
FIG. 19 is a plan view for explaining a graphene-containing device according to example embodiments; [0062]
FIG. 20 is a plan view for explaining a graphene-containing device according to example embodiments; and [0063]
FIGS. 21 A-21 D are perspective views for explaining a method of forming a nanopattern, according to example embodiments.
FIG. 105 may correspond to the substrate 1000 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-containing device comprising: a substrate; a first device region on a first region of a substrate, the first device region including a first graphene nanopattern; and a second device region on a second region of the substrate, the second device region including a second graphene nanopattern, the second graphene nanopattern being separated from the first graphene nanopatte rn by a dead zone distance that is greater than 0 nm and less than or equal to 15 nm. Original
The graphene-containing device of claim 1, wherein the dead zone distance is greater than 0 nm.is and less than or equal to 10 nm. Currently amended
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a graphene nanoribbon (GNR). Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to 10 nm. Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to nrm. Original
The graphene-containing device of claim 1, wherein at least one of the first and second device regions includes one of a field effect transistor (F ET), a tunneling device, a binary junction transistor (BJT), a barristor, a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device. Original
The graphene-containing device of claim 1, wherein the first device region includes a first transistor, and the second device region includes a second transistor. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a straight line pattern. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a curved line pattern. Original
The graphene-containing device of claim 1, wherein the substrate includes an insulation layer on a surface thereof, the insulation layer including a hydrophilic material, and the first and second graphene nanopatterns are arranged on the insulation layer. Original
The graphene-containing device of claim 1, wherein the first device region further includes a first electrode connecting a first part of the first graphene nanopattern and a second electr o de connecting a second part of the first graphene nanopattern, the first electrode being spaced apart from the second electrode in a length direction of the first and second graphene nanopatterns, the second device region further includes a third electrode connecting a first part of the second graphene nanopattern and a fourth electrode connecting a second part of the second graphene nanopattern, the third electrode being spaced apart from the fourth electrode in the length direction, and the first and second electrodes are spaced apart from the third and fourth electrodes in a width direction of the first and second graphene nanopatterns. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing device with first and second device regions
graphene-based field effect transistor/tunneling device/BJT/barristor/memory/solar cell/photodetector/sensor/light-emitting device
Materials described outside the worked examples.
graphene nanopattern
graphene nanoribbon (GNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,929,238Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 E are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0044]
FIGS. 2A-2C are perspective views for explaining a method of forming a block copolymer layer illustrated in
FIG. 3 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0046]
FIG. 4 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0047]
FIGS. 5A-5D are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0048]
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 8 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0051]
FIG. 9 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; Atty. Dkt. No. 2557S I …
FIG. 10 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0053]
FIG. 11 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0054]
FIG. 12 is a cross-sectional view showing a case where a block copolymer layer is formed on a plurality of graphene layers illustrated in
FIG. 13 is an SEM image showing a structure corresponding to
FIG. 14 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0057]
FIGS. 15A-15C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0058]
FIGS. 16A and 16B are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0059]
FIGS. 17A-17C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0060]
FIG. 18 is a plan view for explaining a graphene-containing device according to example embodiments; [0061]
FIG. 19 is a plan view for explaining a graphene-containing device according to example embodiments; [0062]
FIG. 20 is a plan view for explaining a graphene-containing device according to example embodiments; and [0063]
FIGS. 21 A-21 D are perspective views for explaining a method of forming a nanopattern, according to example embodiments.
FIG. 105 may correspond to the substrate 1000 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-containing device comprising: a substrate; a first device region on a first region of a substrate, the first device region including a first graphene nanopattern; and a second device region on a second region of the substrate, the second device region including a second graphene nanopattern, the second graphene nanopattern being separated from the first graphene nanopatte rn by a dead zone distance that is greater than 0 nm and less than or equal to 15 nm. Original
The graphene-containing device of claim 1, wherein the dead zone distance is greater than 0 nm.is and less than or equal to 10 nm. Currently amended
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a graphene nanoribbon (GNR). Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to 10 nm. Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to nrm. Original
The graphene-containing device of claim 1, wherein at least one of the first and second device regions includes one of a field effect transistor (F ET), a tunneling device, a binary junction transistor (BJT), a barristor, a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device. Original
The graphene-containing device of claim 1, wherein the first device region includes a first transistor, and the second device region includes a second transistor. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a straight line pattern. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a curved line pattern. Original
The graphene-containing device of claim 1, wherein the substrate includes an insulation layer on a surface thereof, the insulation layer including a hydrophilic material, and the first and second graphene nanopatterns are arranged on the insulation layer. Original
The graphene-containing device of claim 1, wherein the first device region further includes a first electrode connecting a first part of the first graphene nanopattern and a second electr o de connecting a second part of the first graphene nanopattern, the first electrode being spaced apart from the second electrode in a length direction of the first and second graphene nanopatterns, the second device region further includes a third electrode connecting a first part of the second graphene nanopattern and a fourth electrode connecting a second part of the second graphene nanopattern, the third electrode being spaced apart from the fourth electrode in the length direction, and the first and second electrodes are spaced apart from the third and fourth electrodes in a width direction of the first and second graphene nanopatterns. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing device with first and second device regions
graphene-based field effect transistor/tunneling device/BJT/barristor/memory/solar cell/photodetector/sensor/light-emitting device
Materials described outside the worked examples.
graphene nanopattern
graphene nanoribbon (GNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,929,238Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 E are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0044]
FIGS. 2A-2C are perspective views for explaining a method of forming a block copolymer layer illustrated in
FIG. 3 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0046]
FIG. 4 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0047]
FIGS. 5A-5D are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0048]
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 8 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0051]
FIG. 9 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; Atty. Dkt. No. 2557S I …
FIG. 10 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0053]
FIG. 11 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0054]
FIG. 12 is a cross-sectional view showing a case where a block copolymer layer is formed on a plurality of graphene layers illustrated in
FIG. 13 is an SEM image showing a structure corresponding to
FIG. 14 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0057]
FIGS. 15A-15C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0058]
FIGS. 16A and 16B are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0059]
FIGS. 17A-17C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0060]
FIG. 18 is a plan view for explaining a graphene-containing device according to example embodiments; [0061]
FIG. 19 is a plan view for explaining a graphene-containing device according to example embodiments; [0062]
FIG. 20 is a plan view for explaining a graphene-containing device according to example embodiments; and [0063]
FIGS. 21 A-21 D are perspective views for explaining a method of forming a nanopattern, according to example embodiments.
FIG. 105 may correspond to the substrate 1000 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-containing device comprising: a substrate; a first device region on a first region of a substrate, the first device region including a first graphene nanopattern; and a second device region on a second region of the substrate, the second device region including a second graphene nanopattern, the second graphene nanopattern being separated from the first graphene nanopatte rn by a dead zone distance that is greater than 0 nm and less than or equal to 15 nm. Original
The graphene-containing device of claim 1, wherein the dead zone distance is greater than 0 nm.is and less than or equal to 10 nm. Currently amended
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a graphene nanoribbon (GNR). Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to 10 nm. Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to nrm. Original
The graphene-containing device of claim 1, wherein at least one of the first and second device regions includes one of a field effect transistor (F ET), a tunneling device, a binary junction transistor (BJT), a barristor, a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device. Original
The graphene-containing device of claim 1, wherein the first device region includes a first transistor, and the second device region includes a second transistor. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a straight line pattern. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a curved line pattern. Original
The graphene-containing device of claim 1, wherein the substrate includes an insulation layer on a surface thereof, the insulation layer including a hydrophilic material, and the first and second graphene nanopatterns are arranged on the insulation layer. Original
The graphene-containing device of claim 1, wherein the first device region further includes a first electrode connecting a first part of the first graphene nanopattern and a second electr o de connecting a second part of the first graphene nanopattern, the first electrode being spaced apart from the second electrode in a length direction of the first and second graphene nanopatterns, the second device region further includes a third electrode connecting a first part of the second graphene nanopattern and a fourth electrode connecting a second part of the second graphene nanopattern, the third electrode being spaced apart from the fourth electrode in the length direction, and the first and second electrodes are spaced apart from the third and fourth electrodes in a width direction of the first and second graphene nanopatterns. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing device with first and second device regions
graphene-based field effect transistor/tunneling device/BJT/barristor/memory/solar cell/photodetector/sensor/light-emitting device
Materials described outside the worked examples.
graphene nanopattern
graphene nanoribbon (GNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,929,238Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 E are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0044]
FIGS. 2A-2C are perspective views for explaining a method of forming a block copolymer layer illustrated in
FIG. 3 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0046]
FIG. 4 is a perspective view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0047]
FIGS. 5A-5D are perspective views for explaining a method of forming a graphene nanopattern, according to example embodiments; [0048]
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 8 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0051]
FIG. 9 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; Atty. Dkt. No. 2557S I …
FIG. 10 is a cross-sectional view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0053]
FIG. 11 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0054]
FIG. 12 is a cross-sectional view showing a case where a block copolymer layer is formed on a plurality of graphene layers illustrated in
FIG. 13 is an SEM image showing a structure corresponding to
FIG. 14 is a plan view for explaining a method of forming a graphene nanopattern, according to example embodiments; [0057]
FIGS. 15A-15C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0058]
FIGS. 16A and 16B are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0059]
FIGS. 17A-17C are perspective views for explaining a method of manufacturing a graphene-containing device, according to example embodiments; [0060]
FIG. 18 is a plan view for explaining a graphene-containing device according to example embodiments; [0061]
FIG. 19 is a plan view for explaining a graphene-containing device according to example embodiments; [0062]
FIG. 20 is a plan view for explaining a graphene-containing device according to example embodiments; and [0063]
FIGS. 21 A-21 D are perspective views for explaining a method of forming a nanopattern, according to example embodiments.
FIG. 105 may correspond to the substrate 1000 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-containing device comprising: a substrate; a first device region on a first region of a substrate, the first device region including a first graphene nanopattern; and a second device region on a second region of the substrate, the second device region including a second graphene nanopattern, the second graphene nanopattern being separated from the first graphene nanopatte rn by a dead zone distance that is greater than 0 nm and less than or equal to 15 nm. Original
The graphene-containing device of claim 1, wherein the dead zone distance is greater than 0 nm.is and less than or equal to 10 nm. Currently amended
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a graphene nanoribbon (GNR). Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to 10 nm. Original
The graphene-containing device of claim 1, wherein a unit pattern of each of the first and second graphene nanopatterns has a width that is greater than 0 nm and less than or equal to nrm. Original
The graphene-containing device of claim 1, wherein at least one of the first and second device regions includes one of a field effect transistor (F ET), a tunneling device, a binary junction transistor (BJT), a barristor, a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device. Original
The graphene-containing device of claim 1, wherein the first device region includes a first transistor, and the second device region includes a second transistor. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a straight line pattern. Original
The graphene-containing device of claim 1, wherein each of the first and second graphene nanopatterns includes a curved line pattern. Original
The graphene-containing device of claim 1, wherein the substrate includes an insulation layer on a surface thereof, the insulation layer including a hydrophilic material, and the first and second graphene nanopatterns are arranged on the insulation layer. Original
The graphene-containing device of claim 1, wherein the first device region further includes a first electrode connecting a first part of the first graphene nanopattern and a second electr o de connecting a second part of the first graphene nanopattern, the first electrode being spaced apart from the second electrode in a length direction of the first and second graphene nanopatterns, the second device region further includes a third electrode connecting a first part of the second graphene nanopattern and a fourth electrode connecting a second part of the second graphene nanopattern, the third electrode being spaced apart from the fourth electrode in the length direction, and the first and second electrodes are spaced apart from the third and fourth electrodes in a width direction of the first and second graphene nanopatterns. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing device with first and second device regions
graphene-based field effect transistor/tunneling device/BJT/barristor/memory/solar cell/photodetector/sensor/light-emitting device
Materials described outside the worked examples.
graphene nanopattern
graphene nanoribbon (GNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a scanning electron microscope (SEM) image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
block copolymer
PS-b-PDMS
PS-b-P₄VP
PS-b-PMMA
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 13 is an SEM image showing a structure corresponding to
| — |
block copolymer
PS-b-PDMS
PS-b-P₄VP
PS-b-PMMA
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 13 is an SEM image showing a structure corresponding to
| — |
block copolymer
PS-b-PDMS
PS-b-P₄VP
PS-b-PMMA
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 13 is an SEM image showing a structure corresponding to
| — |
block copolymer
PS-b-PDMS
PS-b-P₄VP
PS-b-PMMA
FIG. 7 is an SEM image showing a mask pattern formed on a graphene layer by using a block copolymer, according to example embodiments; [0050]
FIG. 13 is an SEM image showing a structure corresponding to
| — |