Patent
US 10,541,133GaAs THIN FILM GROWN ON SI SUBSTRATE, AND PREPARATION METHOD FOR GaAs THIN FILM GROWN ON SI SUBSTRATE
Guoqiang LI
US
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US 10,541,133Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method for a GaAs thin film grown on a Si substrate, characterized in that the method comprises the following steps: (1) cleaning a Si substrate; (2) preprocessing the Si substrate; (3) removing the oxide film from the Si substrate; (4) growing a first InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C, and growing an InxGaix As buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0 x10-5 ~2.5x10- 8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1~0.5 ML/s, wherein 0.05<x<0.10; (5) in situ annealing the first InxGaix As buffer layer: increasing the substrate temperature to 500 ~ 540 ° C and annealing for 1 0~ 20 m in, and the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (6) growing a GaAs the buffer layer: decreasing the temperature of the substrate temperature to 350 ~ 500 ° C, and growing a GaAs buffer layer with a thickness of 2 ~20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s; (7) in situ annealing the GaAs buffer layer: increasing the substrate temperature to 500 ~ 540 C and annealing for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (8) growing a second InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C and growing a GaAs buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s, wherein 0.01 <x <0.05; (9) in situ annealing the second InxGaix As buffer layer: increasing the temperature of the substrate to 500 ~ 540 ° C for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (10) growing a GaAs epitaxial film: increasing the substrate temperature to 500 ~ 580 ° C and growing a GaAs epitaxial film with a thickness of 100 nm ~ 1000 nm under the conditions of a reaction chamber vacuum degree of 4.0x10 -5~ 2.7x10-8 Pa, a V/III value of 40 ~ 60, and a growth rate of 0.6 ~1 ML/s.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said cleaning Si substrate in step (1) refers to: washing the substrate with acetone and deionized water to remove organic compounds on the substrate surface; placing the Si substrate in a solution in a ratio of HF:H 2 0=1:10 for a ultrasound treatment for 1 ~ 10 minute; then washing the substrate with deionized water to remove surface oxide and organic compounds; and drying the cleaned substrate with high purity nitrogen.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said preprocessing Si substrate in step(2) refers to: after cleaning the Si substrate, transferring the substrate into an injection chamber and pre-degassing it for 15 ~ 30 minutes; then transferring it to a transfer room and degassing for 0.5 ~ 2hours at a temperature of 300 ~ 400 ° C; and transferring the substrate into a growth chamber after the completion of degassing.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said removing oxide film of the Si substrate refers to: after the Si substrate entering the growth chamber, increasing the temperature of the substrate to 950 ~ 1050 ° C and baking the substrate at a high temperature for 45 ~ 60 minutes to remove the oxide film from the substrate surface.
A GaAs thin film grown on a Si substrate, characterized in that GaAs thin film comprises a substrate of a multilayer stacked structure from bottom to top, a first Inx Gai x As buffer layer, a GaAs buffer layer, a second Inx Gai -x As buffer layer, and a GaAs epitaxial film; wherein said first InxGaix As buffer layer is a first InxGaix As buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10; wherein said GaAs buffer layer is a GaAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 C; said second I nxGa l -xAs buffer layer is an I nxGa l -xAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10;
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said first InxGaix As buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said second I nxGa l -xAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs epitaxial film is 100 nm ~ 1000 nm.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials8 process steps
GaAs thin film grown on Si(111) substrate using a stress-compensated buffer layer sequence. Steps: (1) Si(111) substrate cleaned with acetone/DI water and HF:H₂O=1:10 ultrasound for 1 min; (2) pre-degassed 15 min in injection chamber, then degassed 0.5 h at 300 °C in transfer room; (3) oxide removed by baking at 950 °C for 45 min; (4) first InxGa₁-xAs buffer layer (x=0.05) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (5) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (6) GaAs buffer layer grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (7) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (8) second InxGa₁-xAs buffer layer (x=0.01) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (9) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (10) GaAs epitaxial film grown at elevated temperature.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs thin film on Si substrate with stress-compensated buffer layer stack
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,541,133Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method for a GaAs thin film grown on a Si substrate, characterized in that the method comprises the following steps: (1) cleaning a Si substrate; (2) preprocessing the Si substrate; (3) removing the oxide film from the Si substrate; (4) growing a first InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C, and growing an InxGaix As buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0 x10-5 ~2.5x10- 8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1~0.5 ML/s, wherein 0.05<x<0.10; (5) in situ annealing the first InxGaix As buffer layer: increasing the substrate temperature to 500 ~ 540 ° C and annealing for 1 0~ 20 m in, and the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (6) growing a GaAs the buffer layer: decreasing the temperature of the substrate temperature to 350 ~ 500 ° C, and growing a GaAs buffer layer with a thickness of 2 ~20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s; (7) in situ annealing the GaAs buffer layer: increasing the substrate temperature to 500 ~ 540 C and annealing for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (8) growing a second InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C and growing a GaAs buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s, wherein 0.01 <x <0.05; (9) in situ annealing the second InxGaix As buffer layer: increasing the temperature of the substrate to 500 ~ 540 ° C for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (10) growing a GaAs epitaxial film: increasing the substrate temperature to 500 ~ 580 ° C and growing a GaAs epitaxial film with a thickness of 100 nm ~ 1000 nm under the conditions of a reaction chamber vacuum degree of 4.0x10 -5~ 2.7x10-8 Pa, a V/III value of 40 ~ 60, and a growth rate of 0.6 ~1 ML/s.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said cleaning Si substrate in step (1) refers to: washing the substrate with acetone and deionized water to remove organic compounds on the substrate surface; placing the Si substrate in a solution in a ratio of HF:H 2 0=1:10 for a ultrasound treatment for 1 ~ 10 minute; then washing the substrate with deionized water to remove surface oxide and organic compounds; and drying the cleaned substrate with high purity nitrogen.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said preprocessing Si substrate in step(2) refers to: after cleaning the Si substrate, transferring the substrate into an injection chamber and pre-degassing it for 15 ~ 30 minutes; then transferring it to a transfer room and degassing for 0.5 ~ 2hours at a temperature of 300 ~ 400 ° C; and transferring the substrate into a growth chamber after the completion of degassing.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said removing oxide film of the Si substrate refers to: after the Si substrate entering the growth chamber, increasing the temperature of the substrate to 950 ~ 1050 ° C and baking the substrate at a high temperature for 45 ~ 60 minutes to remove the oxide film from the substrate surface.
A GaAs thin film grown on a Si substrate, characterized in that GaAs thin film comprises a substrate of a multilayer stacked structure from bottom to top, a first Inx Gai x As buffer layer, a GaAs buffer layer, a second Inx Gai -x As buffer layer, and a GaAs epitaxial film; wherein said first InxGaix As buffer layer is a first InxGaix As buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10; wherein said GaAs buffer layer is a GaAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 C; said second I nxGa l -xAs buffer layer is an I nxGa l -xAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10;
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said first InxGaix As buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said second I nxGa l -xAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs epitaxial film is 100 nm ~ 1000 nm.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials8 process steps
GaAs thin film grown on Si(111) substrate using a stress-compensated buffer layer sequence. Steps: (1) Si(111) substrate cleaned with acetone/DI water and HF:H₂O=1:10 ultrasound for 1 min; (2) pre-degassed 15 min in injection chamber, then degassed 0.5 h at 300 °C in transfer room; (3) oxide removed by baking at 950 °C for 45 min; (4) first InxGa₁-xAs buffer layer (x=0.05) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (5) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (6) GaAs buffer layer grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (7) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (8) second InxGa₁-xAs buffer layer (x=0.01) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (9) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (10) GaAs epitaxial film grown at elevated temperature.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs thin film on Si substrate with stress-compensated buffer layer stack
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,541,133Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method for a GaAs thin film grown on a Si substrate, characterized in that the method comprises the following steps: (1) cleaning a Si substrate; (2) preprocessing the Si substrate; (3) removing the oxide film from the Si substrate; (4) growing a first InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C, and growing an InxGaix As buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0 x10-5 ~2.5x10- 8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1~0.5 ML/s, wherein 0.05<x<0.10; (5) in situ annealing the first InxGaix As buffer layer: increasing the substrate temperature to 500 ~ 540 ° C and annealing for 1 0~ 20 m in, and the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (6) growing a GaAs the buffer layer: decreasing the temperature of the substrate temperature to 350 ~ 500 ° C, and growing a GaAs buffer layer with a thickness of 2 ~20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s; (7) in situ annealing the GaAs buffer layer: increasing the substrate temperature to 500 ~ 540 C and annealing for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (8) growing a second InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C and growing a GaAs buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s, wherein 0.01 <x <0.05; (9) in situ annealing the second InxGaix As buffer layer: increasing the temperature of the substrate to 500 ~ 540 ° C for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (10) growing a GaAs epitaxial film: increasing the substrate temperature to 500 ~ 580 ° C and growing a GaAs epitaxial film with a thickness of 100 nm ~ 1000 nm under the conditions of a reaction chamber vacuum degree of 4.0x10 -5~ 2.7x10-8 Pa, a V/III value of 40 ~ 60, and a growth rate of 0.6 ~1 ML/s.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said cleaning Si substrate in step (1) refers to: washing the substrate with acetone and deionized water to remove organic compounds on the substrate surface; placing the Si substrate in a solution in a ratio of HF:H 2 0=1:10 for a ultrasound treatment for 1 ~ 10 minute; then washing the substrate with deionized water to remove surface oxide and organic compounds; and drying the cleaned substrate with high purity nitrogen.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said preprocessing Si substrate in step(2) refers to: after cleaning the Si substrate, transferring the substrate into an injection chamber and pre-degassing it for 15 ~ 30 minutes; then transferring it to a transfer room and degassing for 0.5 ~ 2hours at a temperature of 300 ~ 400 ° C; and transferring the substrate into a growth chamber after the completion of degassing.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said removing oxide film of the Si substrate refers to: after the Si substrate entering the growth chamber, increasing the temperature of the substrate to 950 ~ 1050 ° C and baking the substrate at a high temperature for 45 ~ 60 minutes to remove the oxide film from the substrate surface.
A GaAs thin film grown on a Si substrate, characterized in that GaAs thin film comprises a substrate of a multilayer stacked structure from bottom to top, a first Inx Gai x As buffer layer, a GaAs buffer layer, a second Inx Gai -x As buffer layer, and a GaAs epitaxial film; wherein said first InxGaix As buffer layer is a first InxGaix As buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10; wherein said GaAs buffer layer is a GaAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 C; said second I nxGa l -xAs buffer layer is an I nxGa l -xAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10;
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said first InxGaix As buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said second I nxGa l -xAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs epitaxial film is 100 nm ~ 1000 nm.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials8 process steps
GaAs thin film grown on Si(111) substrate using a stress-compensated buffer layer sequence. Steps: (1) Si(111) substrate cleaned with acetone/DI water and HF:H₂O=1:10 ultrasound for 1 min; (2) pre-degassed 15 min in injection chamber, then degassed 0.5 h at 300 °C in transfer room; (3) oxide removed by baking at 950 °C for 45 min; (4) first InxGa₁-xAs buffer layer (x=0.05) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (5) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (6) GaAs buffer layer grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (7) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (8) second InxGa₁-xAs buffer layer (x=0.01) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (9) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (10) GaAs epitaxial film grown at elevated temperature.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs thin film on Si substrate with stress-compensated buffer layer stack
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,541,133Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method for a GaAs thin film grown on a Si substrate, characterized in that the method comprises the following steps: (1) cleaning a Si substrate; (2) preprocessing the Si substrate; (3) removing the oxide film from the Si substrate; (4) growing a first InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C, and growing an InxGaix As buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0 x10-5 ~2.5x10- 8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1~0.5 ML/s, wherein 0.05<x<0.10; (5) in situ annealing the first InxGaix As buffer layer: increasing the substrate temperature to 500 ~ 540 ° C and annealing for 1 0~ 20 m in, and the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (6) growing a GaAs the buffer layer: decreasing the temperature of the substrate temperature to 350 ~ 500 ° C, and growing a GaAs buffer layer with a thickness of 2 ~20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s; (7) in situ annealing the GaAs buffer layer: increasing the substrate temperature to 500 ~ 540 C and annealing for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (8) growing a second InxGaix As buffer layer: decreasing the temperature of the substrate to 350 ~ 500 ° C and growing a GaAs buffer layer with a thickness of 2 ~ 20 nm under the conditions of a reaction chamber pressure of 3.0x10-5 ~2.5 x10-8 Pa, a V/III value of 20 ~ 30, and a growth rate of 0.1 ~ 0.5 ML/s, wherein 0.01 <x <0.05; (9) in situ annealing the second InxGaix As buffer layer: increasing the temperature of the substrate to 500 ~ 540 ° C for 10 ~ 20min, the pressure of the reaction chamber being 3.0x10-5 ~2.5 x10-8 Pa; (10) growing a GaAs epitaxial film: increasing the substrate temperature to 500 ~ 580 ° C and growing a GaAs epitaxial film with a thickness of 100 nm ~ 1000 nm under the conditions of a reaction chamber vacuum degree of 4.0x10 -5~ 2.7x10-8 Pa, a V/III value of 40 ~ 60, and a growth rate of 0.6 ~1 ML/s.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said cleaning Si substrate in step (1) refers to: washing the substrate with acetone and deionized water to remove organic compounds on the substrate surface; placing the Si substrate in a solution in a ratio of HF:H 2 0=1:10 for a ultrasound treatment for 1 ~ 10 minute; then washing the substrate with deionized water to remove surface oxide and organic compounds; and drying the cleaned substrate with high purity nitrogen.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said preprocessing Si substrate in step(2) refers to: after cleaning the Si substrate, transferring the substrate into an injection chamber and pre-degassing it for 15 ~ 30 minutes; then transferring it to a transfer room and degassing for 0.5 ~ 2hours at a temperature of 300 ~ 400 ° C; and transferring the substrate into a growth chamber after the completion of degassing.
The preparation method for a GaAs thin film grown on a Si substrate according to claim 1, wherein said removing oxide film of the Si substrate refers to: after the Si substrate entering the growth chamber, increasing the temperature of the substrate to 950 ~ 1050 ° C and baking the substrate at a high temperature for 45 ~ 60 minutes to remove the oxide film from the substrate surface.
A GaAs thin film grown on a Si substrate, characterized in that GaAs thin film comprises a substrate of a multilayer stacked structure from bottom to top, a first Inx Gai x As buffer layer, a GaAs buffer layer, a second Inx Gai -x As buffer layer, and a GaAs epitaxial film; wherein said first InxGaix As buffer layer is a first InxGaix As buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10; wherein said GaAs buffer layer is a GaAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 C; said second I nxGa l -xAs buffer layer is an I nxGa l -xAs buffer layer grown at 350 ~ 500 ° C and annealed at 500 ~ 540 ° C, wherein 0.05 <x <0.10;
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said first InxGaix As buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said second I nxGa l -xAs buffer layer is 2 ~ 20 nm.
The GaAs thin film grown on a Si substrate according to claim 5, wherein the thickness of said GaAs epitaxial film is 100 nm ~ 1000 nm.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials8 process steps
GaAs thin film grown on Si(111) substrate using a stress-compensated buffer layer sequence. Steps: (1) Si(111) substrate cleaned with acetone/DI water and HF:H₂O=1:10 ultrasound for 1 min; (2) pre-degassed 15 min in injection chamber, then degassed 0.5 h at 300 °C in transfer room; (3) oxide removed by baking at 950 °C for 45 min; (4) first InxGa₁-xAs buffer layer (x=0.05) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (5) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (6) GaAs buffer layer grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (7) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (8) second InxGa₁-xAs buffer layer (x=0.01) grown at 350 °C, 2 nm, 3.0e-5 Pa, V/III=20, 0.1 ML/s; (9) in situ annealed at 500 °C for 10 min at 3.0e-5 Pa; (10) GaAs epitaxial film grown at elevated temperature.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs thin film on Si substrate with stress-compensated buffer layer stack
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
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