Patent
US 10,636,539COMPOUND, COMPOUND FABRICATION METHOD, AND GRAPHENE NANORIBBON FABRICATION METHOD
MANABU OHTOMO
US
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US 10,636,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIG. 3. Aromatic cyclization of its side chain R is performed. Alternatively, a functional group containing a determined number of carbons is introduced as a …
FIG. 4, the compound 70a is vacuum-deposited over a catalytic metal substrate to synthesize a polymer chain. Furthermore, aromatic cyclization is performed by …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 7A illustrates the polymer chain 80 synthesized from the DBSP 70.
FIG. 8A and synthesized from the DBBA 100 or the polymer chain 210 illustrated in
FIG. 9A and synthesized from the DBTP 200, the 7L-7L interaction acts between adjacent polymer chains 110 or between adjacent polymer chains 210. As …
FIG. 10, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 11, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 12B illustrates a second example of a route of the synthesis of a precursor. [0100] For example, a compound 10 c and a compound 20c (binaphthyl …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
FIG. 15 illustrates a third example of a semiconductor device. F IG. 15 is a schematic sectional view of a semiconductor dev i ce. [0124] A semiconductor …
FIG. 16 is a schematic sectional view of a semiconductor device. [0132] A semiconductor device 800 illustrated in
FIG. 17 is a schematic view of an example of an electronic device. [0141] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An examiner's amendment to the record appears unacceptable to applicant, an amendment may be consideration of such an amendment, it MUST be fee. below. Should the changes and/or additions be filed as provided by 37 CFR 1.312. To ensure submitted no later than the payment of the issue
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene nanoribbon channel
Materials described outside the worked examples.
graphene nanoribbon precursor compound (general formula 1)
graphene nanoribbon (7ACGNR)
graphene nanoribbon (9ACGNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,636,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIG. 3. Aromatic cyclization of its side chain R is performed. Alternatively, a functional group containing a determined number of carbons is introduced as a …
FIG. 4, the compound 70a is vacuum-deposited over a catalytic metal substrate to synthesize a polymer chain. Furthermore, aromatic cyclization is performed by …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 7A illustrates the polymer chain 80 synthesized from the DBSP 70.
FIG. 8A and synthesized from the DBBA 100 or the polymer chain 210 illustrated in
FIG. 9A and synthesized from the DBTP 200, the 7L-7L interaction acts between adjacent polymer chains 110 or between adjacent polymer chains 210. As …
FIG. 10, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 11, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 12B illustrates a second example of a route of the synthesis of a precursor. [0100] For example, a compound 10 c and a compound 20c (binaphthyl …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
FIG. 15 illustrates a third example of a semiconductor device. F IG. 15 is a schematic sectional view of a semiconductor dev i ce. [0124] A semiconductor …
FIG. 16 is a schematic sectional view of a semiconductor device. [0132] A semiconductor device 800 illustrated in
FIG. 17 is a schematic view of an example of an electronic device. [0141] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An examiner's amendment to the record appears unacceptable to applicant, an amendment may be consideration of such an amendment, it MUST be fee. below. Should the changes and/or additions be filed as provided by 37 CFR 1.312. To ensure submitted no later than the payment of the issue
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene nanoribbon channel
Materials described outside the worked examples.
graphene nanoribbon precursor compound (general formula 1)
graphene nanoribbon (7ACGNR)
graphene nanoribbon (9ACGNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,636,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIG. 3. Aromatic cyclization of its side chain R is performed. Alternatively, a functional group containing a determined number of carbons is introduced as a …
FIG. 4, the compound 70a is vacuum-deposited over a catalytic metal substrate to synthesize a polymer chain. Furthermore, aromatic cyclization is performed by …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 7A illustrates the polymer chain 80 synthesized from the DBSP 70.
FIG. 8A and synthesized from the DBBA 100 or the polymer chain 210 illustrated in
FIG. 9A and synthesized from the DBTP 200, the 7L-7L interaction acts between adjacent polymer chains 110 or between adjacent polymer chains 210. As …
FIG. 10, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 11, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 12B illustrates a second example of a route of the synthesis of a precursor. [0100] For example, a compound 10 c and a compound 20c (binaphthyl …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
FIG. 15 illustrates a third example of a semiconductor device. F IG. 15 is a schematic sectional view of a semiconductor dev i ce. [0124] A semiconductor …
FIG. 16 is a schematic sectional view of a semiconductor device. [0132] A semiconductor device 800 illustrated in
FIG. 17 is a schematic view of an example of an electronic device. [0141] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An examiner's amendment to the record appears unacceptable to applicant, an amendment may be consideration of such an amendment, it MUST be fee. below. Should the changes and/or additions be filed as provided by 37 CFR 1.312. To ensure submitted no later than the payment of the issue
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene nanoribbon channel
Materials described outside the worked examples.
graphene nanoribbon precursor compound (general formula 1)
graphene nanoribbon (7ACGNR)
graphene nanoribbon (9ACGNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,636,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIG. 3. Aromatic cyclization of its side chain R is performed. Alternatively, a functional group containing a determined number of carbons is introduced as a …
FIG. 4, the compound 70a is vacuum-deposited over a catalytic metal substrate to synthesize a polymer chain. Furthermore, aromatic cyclization is performed by …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 7A illustrates the polymer chain 80 synthesized from the DBSP 70.
FIG. 8A and synthesized from the DBBA 100 or the polymer chain 210 illustrated in
FIG. 9A and synthesized from the DBTP 200, the 7L-7L interaction acts between adjacent polymer chains 110 or between adjacent polymer chains 210. As …
FIG. 10, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 11, the compound 20, of the compound 10 and the compound 20 illustrated in
FIG. 12B illustrates a second example of a route of the synthesis of a precursor. [0100] For example, a compound 10 c and a compound 20c (binaphthyl …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
FIG. 15 illustrates a third example of a semiconductor device. F IG. 15 is a schematic sectional view of a semiconductor dev i ce. [0124] A semiconductor …
FIG. 16 is a schematic sectional view of a semiconductor device. [0132] A semiconductor device 800 illustrated in
FIG. 17 is a schematic view of an example of an electronic device. [0141] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An examiner's amendment to the record appears unacceptable to applicant, an amendment may be consideration of such an amendment, it MUST be fee. below. Should the changes and/or additions be filed as provided by 37 CFR 1.312. To ensure submitted no later than the payment of the issue
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene nanoribbon channel
Materials described outside the worked examples.
graphene nanoribbon precursor compound (general formula 1)
graphene nanoribbon (7ACGNR)
graphene nanoribbon (9ACGNR)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the 7ACGNR 120 obtained has a comparatively large band gap. If the 7ACGNR 120 is applied to a semiconductor device, it is not always easy to realize …
Related documents with shared materials, methods, properties, or citations.
10,10'-dibromo-9,9'-bianthryl (DBBA)
3',6'-dibromo-1,1':2',1''-terphenyl (DBTP)
compound represented by formula (2)
compound represented by formula (5)
compound represented by formula (6)
compound represented by formula (8)
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
10,10'-dibromo-9,9'-bianthryl (DBBA)
3',6'-dibromo-1,1':2',1''-terphenyl (DBTP)
compound represented by formula (2)
compound represented by formula (5)
compound represented by formula (6)
compound represented by formula (8)
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
10,10'-dibromo-9,9'-bianthryl (DBBA)
3',6'-dibromo-1,1':2',1''-terphenyl (DBTP)
compound represented by formula (2)
compound represented by formula (5)
compound represented by formula (6)
compound represented by formula (8)
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …
10,10'-dibromo-9,9'-bianthryl (DBBA)
3',6'-dibromo-1,1':2',1''-terphenyl (DBTP)
compound represented by formula (2)
compound represented by formula (5)
compound represented by formula (6)
compound represented by formula (8)
FIG. 2 indicates a polymerization degree. [0031] Usually the width of a graphene nanoribbon has an influence on its band gap. There is a tendency for the band …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 5 A and 5 B, a band gap Eg i of the 9ACGNR 90 is estimated by the density functional method to be 0.79 eV. The band gap Eg l of the 9ACGNR 90 is about …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIGS. 6A and 6B, a band gap Eg₂ of the 7ACGNR 120 is estimated to be 1.56 eV. This value is smaller than a value experimentally reported. This is a known …
FIG. 13 is also used as an FET- type gas sensor by utilizing this property of the graphene nanoribbon 530. With the semiconductor device 500 used as an …
FIG. 14 is an example of a top gate type FET. The semiconductor device 600 includes a support substrate 610, a graphene nanoribbon 620, an electrode 630a, an …