Patent
US 12,119,382 B2BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu et al.
GlobalWafers Co., Ltd., Hsinchu (TW)·Oct. 15, 2024·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,119,382 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts an embodiment of a semiconductor het- erostructure according to the present disclosure.
FIG. 2 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 3 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 4 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 5 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 6 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 7 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 8 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 9 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 10 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 11 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 12 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A heterostructure, comprising: a substrate; and a buffer layer comprising a plurality of layers having a composition AlxInyGa₁-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region, comprising at least two layers, one according to a first layer profile and another according to a second layer profile, wherein the first layer profile has a higher aluminum content than the second layer profile; wherein the buffer layer has a second region comprising at least two layers, one according to a third layer profile and another according to a fourth layer profile, wherein the third layer profile has a higher aluminum content than the fourth layer profile and the fourth layer profile at any point along a growth direction has a lower B₂ aluminum content than the second layer profile of the first region at any point along the growth direction; wherein the buffer layer has a third region comprising at least two layers, one according to a fifth layer profile and another according to a sixth layer profile, wherein the fifth layer profile has a higher aluminum content than the sixth layer profile and the sixth layer profile at any point along the growth direction has a lower aluminum content than the fourth layer profile of the second region at any point along the growth direction; and wherein the aluminum content varies continuously throughout a thickness of the even numbered layer profiles.
The heterostructure of claim 1, wherein the aluminum content varies continuously throughout a thickness of each individual layer.
The heterostructure of claim 1, wherein the aluminum content varies continuously between the same content values throughout a thickness of the odd numbered layer profiles.
The heterostructure of claim 1, wherein at least one pair of layer profiles selected from the first layer profile and second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 1, wherein the buffer layer has a thickness, measured in the growth direction, of at least 1 micrometer.
The heterostructure of claim 1, wherein each individual layer independently has a thickness, measured in the growth direction, between about 1 nanometer and 50 nanometers.
The heterostructure of claim 1, wherein the thickness of the layers with odd numbered layer profiles is substantially the same and/or the thickness of the layers with even numbered layer profiles is substantially the same.
A heterostructure, comprising: a substrate; a buffer layer having a compositionAlxInyGa₁-x-yN, where x≤1 and y≥0; a plurality of layers; and a first region comprising at least two layers, one with a first layer profile and another with a second layer profile, wherein the first layer profile has a continu-ously decreasing aluminum concentration and the sec-ond layer profile has a continuously increasing alumi-num concentration; a second region comprising at least two layers, one with a third layer profile and another with a fourth layer profile, wherein the third layer profile has a continu-ously decreasing aluminum concentration and the fourth layer profile has a continuously increasing alu-minum concentration; a third region comprising at least two layers, one with a fifth layer profile and another with a sixth layer profile, wherein the fifth layer profile has a continuously decreasing aluminum concentration and the sixth layer profile has a continuously increasing aluminum con-centration; and wherein the first layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the third layer profile.
The heterostructure of claim 9, wherein the buffer layer has a plurality of layers and along a growth direction with the plurality of layers repeatedly changing from a layer of continuously increasing aluminum concentration to a layer of continuously decreasing aluminum concentration, or vice versa, and wherein each successive layer of continu-ously decreasing aluminum concentration in the growth direction terminates at a lower aluminum concentration than the previous layer of continuously decreasing aluminum concentration.
The heterostructure of claim 9, wherein at least one pair of layer profiles selected from the first layer profile and 10 second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 9, wherein the third layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the fifth layer profile.
Layer stacks claimed or described, ordered top of device to substrate.
heterostructure with AlxInyGa₁-x-yN buffer layer
Materials described outside the worked examples.
AlxInyGa₁-x-yN
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
individual layer thickness range (claimed) | 1–50 nm | AlxInyGa₁-x-yN |
individual layer thickness range (description, preferred) | 2–30 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,119,382 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts an embodiment of a semiconductor het- erostructure according to the present disclosure.
FIG. 2 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 3 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 4 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 5 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 6 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 7 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 8 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 9 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 10 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 11 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 12 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A heterostructure, comprising: a substrate; and a buffer layer comprising a plurality of layers having a composition AlxInyGa₁-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region, comprising at least two layers, one according to a first layer profile and another according to a second layer profile, wherein the first layer profile has a higher aluminum content than the second layer profile; wherein the buffer layer has a second region comprising at least two layers, one according to a third layer profile and another according to a fourth layer profile, wherein the third layer profile has a higher aluminum content than the fourth layer profile and the fourth layer profile at any point along a growth direction has a lower B₂ aluminum content than the second layer profile of the first region at any point along the growth direction; wherein the buffer layer has a third region comprising at least two layers, one according to a fifth layer profile and another according to a sixth layer profile, wherein the fifth layer profile has a higher aluminum content than the sixth layer profile and the sixth layer profile at any point along the growth direction has a lower aluminum content than the fourth layer profile of the second region at any point along the growth direction; and wherein the aluminum content varies continuously throughout a thickness of the even numbered layer profiles.
The heterostructure of claim 1, wherein the aluminum content varies continuously throughout a thickness of each individual layer.
The heterostructure of claim 1, wherein the aluminum content varies continuously between the same content values throughout a thickness of the odd numbered layer profiles.
The heterostructure of claim 1, wherein at least one pair of layer profiles selected from the first layer profile and second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 1, wherein the buffer layer has a thickness, measured in the growth direction, of at least 1 micrometer.
The heterostructure of claim 1, wherein each individual layer independently has a thickness, measured in the growth direction, between about 1 nanometer and 50 nanometers.
The heterostructure of claim 1, wherein the thickness of the layers with odd numbered layer profiles is substantially the same and/or the thickness of the layers with even numbered layer profiles is substantially the same.
A heterostructure, comprising: a substrate; a buffer layer having a compositionAlxInyGa₁-x-yN, where x≤1 and y≥0; a plurality of layers; and a first region comprising at least two layers, one with a first layer profile and another with a second layer profile, wherein the first layer profile has a continu-ously decreasing aluminum concentration and the sec-ond layer profile has a continuously increasing alumi-num concentration; a second region comprising at least two layers, one with a third layer profile and another with a fourth layer profile, wherein the third layer profile has a continu-ously decreasing aluminum concentration and the fourth layer profile has a continuously increasing alu-minum concentration; a third region comprising at least two layers, one with a fifth layer profile and another with a sixth layer profile, wherein the fifth layer profile has a continuously decreasing aluminum concentration and the sixth layer profile has a continuously increasing aluminum con-centration; and wherein the first layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the third layer profile.
The heterostructure of claim 9, wherein the buffer layer has a plurality of layers and along a growth direction with the plurality of layers repeatedly changing from a layer of continuously increasing aluminum concentration to a layer of continuously decreasing aluminum concentration, or vice versa, and wherein each successive layer of continu-ously decreasing aluminum concentration in the growth direction terminates at a lower aluminum concentration than the previous layer of continuously decreasing aluminum concentration.
The heterostructure of claim 9, wherein at least one pair of layer profiles selected from the first layer profile and 10 second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 9, wherein the third layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the fifth layer profile.
Layer stacks claimed or described, ordered top of device to substrate.
heterostructure with AlxInyGa₁-x-yN buffer layer
Materials described outside the worked examples.
AlxInyGa₁-x-yN
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
individual layer thickness range (claimed) | 1–50 nm | AlxInyGa₁-x-yN |
individual layer thickness range (description, preferred) | 2–30 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,119,382 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts an embodiment of a semiconductor het- erostructure according to the present disclosure.
FIG. 2 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 3 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 4 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 5 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 6 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 7 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 8 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 9 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 10 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 11 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 12 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A heterostructure, comprising: a substrate; and a buffer layer comprising a plurality of layers having a composition AlxInyGa₁-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region, comprising at least two layers, one according to a first layer profile and another according to a second layer profile, wherein the first layer profile has a higher aluminum content than the second layer profile; wherein the buffer layer has a second region comprising at least two layers, one according to a third layer profile and another according to a fourth layer profile, wherein the third layer profile has a higher aluminum content than the fourth layer profile and the fourth layer profile at any point along a growth direction has a lower B₂ aluminum content than the second layer profile of the first region at any point along the growth direction; wherein the buffer layer has a third region comprising at least two layers, one according to a fifth layer profile and another according to a sixth layer profile, wherein the fifth layer profile has a higher aluminum content than the sixth layer profile and the sixth layer profile at any point along the growth direction has a lower aluminum content than the fourth layer profile of the second region at any point along the growth direction; and wherein the aluminum content varies continuously throughout a thickness of the even numbered layer profiles.
The heterostructure of claim 1, wherein the aluminum content varies continuously throughout a thickness of each individual layer.
The heterostructure of claim 1, wherein the aluminum content varies continuously between the same content values throughout a thickness of the odd numbered layer profiles.
The heterostructure of claim 1, wherein at least one pair of layer profiles selected from the first layer profile and second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 1, wherein the buffer layer has a thickness, measured in the growth direction, of at least 1 micrometer.
The heterostructure of claim 1, wherein each individual layer independently has a thickness, measured in the growth direction, between about 1 nanometer and 50 nanometers.
The heterostructure of claim 1, wherein the thickness of the layers with odd numbered layer profiles is substantially the same and/or the thickness of the layers with even numbered layer profiles is substantially the same.
A heterostructure, comprising: a substrate; a buffer layer having a compositionAlxInyGa₁-x-yN, where x≤1 and y≥0; a plurality of layers; and a first region comprising at least two layers, one with a first layer profile and another with a second layer profile, wherein the first layer profile has a continu-ously decreasing aluminum concentration and the sec-ond layer profile has a continuously increasing alumi-num concentration; a second region comprising at least two layers, one with a third layer profile and another with a fourth layer profile, wherein the third layer profile has a continu-ously decreasing aluminum concentration and the fourth layer profile has a continuously increasing alu-minum concentration; a third region comprising at least two layers, one with a fifth layer profile and another with a sixth layer profile, wherein the fifth layer profile has a continuously decreasing aluminum concentration and the sixth layer profile has a continuously increasing aluminum con-centration; and wherein the first layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the third layer profile.
The heterostructure of claim 9, wherein the buffer layer has a plurality of layers and along a growth direction with the plurality of layers repeatedly changing from a layer of continuously increasing aluminum concentration to a layer of continuously decreasing aluminum concentration, or vice versa, and wherein each successive layer of continu-ously decreasing aluminum concentration in the growth direction terminates at a lower aluminum concentration than the previous layer of continuously decreasing aluminum concentration.
The heterostructure of claim 9, wherein at least one pair of layer profiles selected from the first layer profile and 10 second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 9, wherein the third layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the fifth layer profile.
Layer stacks claimed or described, ordered top of device to substrate.
heterostructure with AlxInyGa₁-x-yN buffer layer
Materials described outside the worked examples.
AlxInyGa₁-x-yN
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
individual layer thickness range (claimed) | 1–50 nm | AlxInyGa₁-x-yN |
individual layer thickness range (description, preferred) | 2–30 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,119,382 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts an embodiment of a semiconductor het- erostructure according to the present disclosure.
FIG. 2 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 3 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 4 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 5 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 6 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 7 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 8 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 9 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 10 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 11 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
FIG. 12 depicts an embodiment of the composition of a buffer layer according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A heterostructure, comprising: a substrate; and a buffer layer comprising a plurality of layers having a composition AlxInyGa₁-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region, comprising at least two layers, one according to a first layer profile and another according to a second layer profile, wherein the first layer profile has a higher aluminum content than the second layer profile; wherein the buffer layer has a second region comprising at least two layers, one according to a third layer profile and another according to a fourth layer profile, wherein the third layer profile has a higher aluminum content than the fourth layer profile and the fourth layer profile at any point along a growth direction has a lower B₂ aluminum content than the second layer profile of the first region at any point along the growth direction; wherein the buffer layer has a third region comprising at least two layers, one according to a fifth layer profile and another according to a sixth layer profile, wherein the fifth layer profile has a higher aluminum content than the sixth layer profile and the sixth layer profile at any point along the growth direction has a lower aluminum content than the fourth layer profile of the second region at any point along the growth direction; and wherein the aluminum content varies continuously throughout a thickness of the even numbered layer profiles.
The heterostructure of claim 1, wherein the aluminum content varies continuously throughout a thickness of each individual layer.
The heterostructure of claim 1, wherein the aluminum content varies continuously between the same content values throughout a thickness of the odd numbered layer profiles.
The heterostructure of claim 1, wherein at least one pair of layer profiles selected from the first layer profile and second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 1, wherein the buffer layer has a thickness, measured in the growth direction, of at least 1 micrometer.
The heterostructure of claim 1, wherein each individual layer independently has a thickness, measured in the growth direction, between about 1 nanometer and 50 nanometers.
The heterostructure of claim 1, wherein the thickness of the layers with odd numbered layer profiles is substantially the same and/or the thickness of the layers with even numbered layer profiles is substantially the same.
A heterostructure, comprising: a substrate; a buffer layer having a compositionAlxInyGa₁-x-yN, where x≤1 and y≥0; a plurality of layers; and a first region comprising at least two layers, one with a first layer profile and another with a second layer profile, wherein the first layer profile has a continu-ously decreasing aluminum concentration and the sec-ond layer profile has a continuously increasing alumi-num concentration; a second region comprising at least two layers, one with a third layer profile and another with a fourth layer profile, wherein the third layer profile has a continu-ously decreasing aluminum concentration and the fourth layer profile has a continuously increasing alu-minum concentration; a third region comprising at least two layers, one with a fifth layer profile and another with a sixth layer profile, wherein the fifth layer profile has a continuously decreasing aluminum concentration and the sixth layer profile has a continuously increasing aluminum con-centration; and wherein the first layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the third layer profile.
The heterostructure of claim 9, wherein the buffer layer has a plurality of layers and along a growth direction with the plurality of layers repeatedly changing from a layer of continuously increasing aluminum concentration to a layer of continuously decreasing aluminum concentration, or vice versa, and wherein each successive layer of continu-ously decreasing aluminum concentration in the growth direction terminates at a lower aluminum concentration than the previous layer of continuously decreasing aluminum concentration.
The heterostructure of claim 9, wherein at least one pair of layer profiles selected from the first layer profile and 10 second layer profile, third layer profile and fourth layer profile, and fifth layer profile and sixth layer profile repeats at least one time within the first region, second region, or third region, respectively.
The heterostructure of claim 9, wherein the third layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the fifth layer profile.
Layer stacks claimed or described, ordered top of device to substrate.
heterostructure with AlxInyGa₁-x-yN buffer layer
Materials described outside the worked examples.
AlxInyGa₁-x-yN
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
individual layer thickness range (claimed) | 1–50 nm | AlxInyGa₁-x-yN |
individual layer thickness range (description, preferred) | 2–30 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
AlGaN
AlN
Silicon
Si
Silicon Carbide
SiC
Sapphire
Al₂O₃
individual layer thickness range (description, preferred narrower) | 5–15 nm | AlxInyGa₁-x-yN |
total buffer layer thickness range (description) | 100–1000 nm | AlxInyGa₁-x-yN |
total buffer layer thickness minimum (claimed) | ≥ 1000 nm | AlxInyGa₁-x-yN |
Thickness | 200–500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
AlGaN
AlN
Silicon
Si
Silicon Carbide
SiC
Sapphire
Al₂O₃
individual layer thickness range (description, preferred narrower) | 5–15 nm | AlxInyGa₁-x-yN |
total buffer layer thickness range (description) | 100–1000 nm | AlxInyGa₁-x-yN |
total buffer layer thickness minimum (claimed) | ≥ 1000 nm | AlxInyGa₁-x-yN |
Thickness | 200–500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
AlGaN
AlN
Silicon
Si
Silicon Carbide
SiC
Sapphire
Al₂O₃
individual layer thickness range (description, preferred narrower) | 5–15 nm | AlxInyGa₁-x-yN |
total buffer layer thickness range (description) | 100–1000 nm | AlxInyGa₁-x-yN |
total buffer layer thickness minimum (claimed) | ≥ 1000 nm | AlxInyGa₁-x-yN |
Thickness | 200–500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |
AlGaN
AlN
Silicon
Si
Silicon Carbide
SiC
Sapphire
Al₂O₃
individual layer thickness range (description, preferred narrower) | 5–15 nm | AlxInyGa₁-x-yN |
total buffer layer thickness range (description) | 100–1000 nm | AlxInyGa₁-x-yN |
total buffer layer thickness minimum (claimed) | ≥ 1000 nm | AlxInyGa₁-x-yN |
Thickness | 200–500 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 µm | — |