Patent
US 10,217,875BROADBAND GRAPHENE-BASED OPTICAL LIMITER FOR THE PROTECTION OF BACKSIDE ILLUMINATED CMOS DETECTORS
Michael Ushinsky
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,217,875Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an example of a Broadband Graphene-Based Optical Limiter (BGBOL) including a frontal arrangement of a single, dual- or multi- layer of graphene …
FIG. 2 illustrates an example of a process for transferring CVD grown graphene from a copper or a nickel substrate onto a separate substrate, such as a silicon …
FIG. 3 is a dark field microscopy image of laser damage to an unprotected commercial 5 backside- illuminated (BSI) sensor. The laser damage was induced by 532 …
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
FIGS. 5A and 5B detail an exemplary energy-dispersive x-ray (EDX) spectroscopy 10 spectral response (
FIGS. 6A and 6B illustrate two images of graphene-epoxy layers deposited onto glass substrates with respective different concentrations of graphene clusters;
FIG. 7 is a chart illustrating the limiting effect of a graphene polymer SLF having an approximately 100 micron thick polymer film deposited onto a fused silica …
FIGS. 8A and 8B show two dark field microscopy images comparing laser damage on a conventional glass substrate (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a sacrificial limiter filter for an optical device, the method comprising: depositing a first layer of graphene onto a surface of a silicon substrate of the optical device, wherein the optical device is a backside-illuminated focal plane array (FPA) or a backside-illuminated charge coupled device (CCD) camera; depositing a first nano-layer of dielectric material onto the first layer of graphene; depositing a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure; depositing a third layer of graphene onto the second layer of graphene; depositing a second nano-layer of dielectric material onto the third layer of graphene; and depositing a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nanolayer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Previously presented
The method of claim 1, wherein depositing the first layer of graphene comprises growing the first layer of graphene onto the surface of the silicon substrate. Previously presented
The method of claim 1, wherein the silicon substrate is a first substrate and depositing at least one of the first, second, third and fourth layers of graphene comprises transferring graphene from a second substrate to the first substrate. Previously presented
The method of claim 1, wherein depositing at least one of the first, second, third and fourth layers of graphene further comprising depositing at least one polymer, the at least one polymer having the graphene contained therein such that the graphene is mixed with the at least one polymer. Previously presented
The method of claim 1, further comprising depositing alternating layers of low and high refraction dielectric materials onto the surface of the silicon substrate prior to depositing the first layer of graphene. Previously presented
The method of claim 1, further comprising patterning the fourth layer of graphene such that the fourth layer of graphene exhibits surface plasmon resonance when exposed to desired frequencies of optical radiation. Previously presented
-9. Canceled
Canceled
A backside-illuminated CMOS detector comprising: a silicon substrate; and at least one layer of graphene-epoxy material consisting of graphene mixed within an optical epoxy adhesive oligomer disposed on a surface of the silicon substrate, the graphene- epoxy material having a thickness in a range of about 50 microns to about 120 microns and including a concentration of graphene in the optical epoxy adhesive oligomer that is about 2% by weight, the at least one layer of graphene-epoxy material including a first layer of graphene onto a surface of a silicon substrate of the optical device, a first nano-layer of dielectric material onto the first layer of graphene, a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure, a third layer of graphene onto the second layer of graphene, a second nano-layer of dielectric material onto the third layer of graphene, and a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nano-layer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Currently amended
The backside-illuminated CMOS detector of claim 12, wherein the at least one layer of graphene-epoxy material is patterned. Original
The backside-illuminated CMOS detector of claim 12, wherein the thickness of the at least one layer of graphene-epoxy material is about 100 microns. Original
-1 8. Canceled
Canceled
The backside-illuminated CMOS detector of claim [[18]] 12, wherein the graphene-epoxy material is about 75% to about 85% optically transmissive in the spectral range. Currently amended
The backside-illuminated CMOS detector of claim 19, wherein the graphene-epoxy material is configured to block unwanted light radiation outside the spectral range. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
sacrificial limiter filter for backside-illuminated FPA or CCD camera
Materials described outside the worked examples.
graphene
C
dielectric material (nano-layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmission of graphene layer(s) in spectral range 2-8 microns | ≥ 70 | C |
optical transmissivity of graphene-epoxy material in spectral range 2-8 microns | 75–85 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,217,875Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an example of a Broadband Graphene-Based Optical Limiter (BGBOL) including a frontal arrangement of a single, dual- or multi- layer of graphene …
FIG. 2 illustrates an example of a process for transferring CVD grown graphene from a copper or a nickel substrate onto a separate substrate, such as a silicon …
FIG. 3 is a dark field microscopy image of laser damage to an unprotected commercial 5 backside- illuminated (BSI) sensor. The laser damage was induced by 532 …
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
FIGS. 5A and 5B detail an exemplary energy-dispersive x-ray (EDX) spectroscopy 10 spectral response (
FIGS. 6A and 6B illustrate two images of graphene-epoxy layers deposited onto glass substrates with respective different concentrations of graphene clusters;
FIG. 7 is a chart illustrating the limiting effect of a graphene polymer SLF having an approximately 100 micron thick polymer film deposited onto a fused silica …
FIGS. 8A and 8B show two dark field microscopy images comparing laser damage on a conventional glass substrate (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a sacrificial limiter filter for an optical device, the method comprising: depositing a first layer of graphene onto a surface of a silicon substrate of the optical device, wherein the optical device is a backside-illuminated focal plane array (FPA) or a backside-illuminated charge coupled device (CCD) camera; depositing a first nano-layer of dielectric material onto the first layer of graphene; depositing a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure; depositing a third layer of graphene onto the second layer of graphene; depositing a second nano-layer of dielectric material onto the third layer of graphene; and depositing a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nanolayer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Previously presented
The method of claim 1, wherein depositing the first layer of graphene comprises growing the first layer of graphene onto the surface of the silicon substrate. Previously presented
The method of claim 1, wherein the silicon substrate is a first substrate and depositing at least one of the first, second, third and fourth layers of graphene comprises transferring graphene from a second substrate to the first substrate. Previously presented
The method of claim 1, wherein depositing at least one of the first, second, third and fourth layers of graphene further comprising depositing at least one polymer, the at least one polymer having the graphene contained therein such that the graphene is mixed with the at least one polymer. Previously presented
The method of claim 1, further comprising depositing alternating layers of low and high refraction dielectric materials onto the surface of the silicon substrate prior to depositing the first layer of graphene. Previously presented
The method of claim 1, further comprising patterning the fourth layer of graphene such that the fourth layer of graphene exhibits surface plasmon resonance when exposed to desired frequencies of optical radiation. Previously presented
-9. Canceled
Canceled
A backside-illuminated CMOS detector comprising: a silicon substrate; and at least one layer of graphene-epoxy material consisting of graphene mixed within an optical epoxy adhesive oligomer disposed on a surface of the silicon substrate, the graphene- epoxy material having a thickness in a range of about 50 microns to about 120 microns and including a concentration of graphene in the optical epoxy adhesive oligomer that is about 2% by weight, the at least one layer of graphene-epoxy material including a first layer of graphene onto a surface of a silicon substrate of the optical device, a first nano-layer of dielectric material onto the first layer of graphene, a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure, a third layer of graphene onto the second layer of graphene, a second nano-layer of dielectric material onto the third layer of graphene, and a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nano-layer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Currently amended
The backside-illuminated CMOS detector of claim 12, wherein the at least one layer of graphene-epoxy material is patterned. Original
The backside-illuminated CMOS detector of claim 12, wherein the thickness of the at least one layer of graphene-epoxy material is about 100 microns. Original
-1 8. Canceled
Canceled
The backside-illuminated CMOS detector of claim [[18]] 12, wherein the graphene-epoxy material is about 75% to about 85% optically transmissive in the spectral range. Currently amended
The backside-illuminated CMOS detector of claim 19, wherein the graphene-epoxy material is configured to block unwanted light radiation outside the spectral range. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
sacrificial limiter filter for backside-illuminated FPA or CCD camera
Materials described outside the worked examples.
graphene
C
dielectric material (nano-layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmission of graphene layer(s) in spectral range 2-8 microns | ≥ 70 | C |
optical transmissivity of graphene-epoxy material in spectral range 2-8 microns | 75–85 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,217,875Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an example of a Broadband Graphene-Based Optical Limiter (BGBOL) including a frontal arrangement of a single, dual- or multi- layer of graphene …
FIG. 2 illustrates an example of a process for transferring CVD grown graphene from a copper or a nickel substrate onto a separate substrate, such as a silicon …
FIG. 3 is a dark field microscopy image of laser damage to an unprotected commercial 5 backside- illuminated (BSI) sensor. The laser damage was induced by 532 …
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
FIGS. 5A and 5B detail an exemplary energy-dispersive x-ray (EDX) spectroscopy 10 spectral response (
FIGS. 6A and 6B illustrate two images of graphene-epoxy layers deposited onto glass substrates with respective different concentrations of graphene clusters;
FIG. 7 is a chart illustrating the limiting effect of a graphene polymer SLF having an approximately 100 micron thick polymer film deposited onto a fused silica …
FIGS. 8A and 8B show two dark field microscopy images comparing laser damage on a conventional glass substrate (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a sacrificial limiter filter for an optical device, the method comprising: depositing a first layer of graphene onto a surface of a silicon substrate of the optical device, wherein the optical device is a backside-illuminated focal plane array (FPA) or a backside-illuminated charge coupled device (CCD) camera; depositing a first nano-layer of dielectric material onto the first layer of graphene; depositing a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure; depositing a third layer of graphene onto the second layer of graphene; depositing a second nano-layer of dielectric material onto the third layer of graphene; and depositing a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nanolayer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Previously presented
The method of claim 1, wherein depositing the first layer of graphene comprises growing the first layer of graphene onto the surface of the silicon substrate. Previously presented
The method of claim 1, wherein the silicon substrate is a first substrate and depositing at least one of the first, second, third and fourth layers of graphene comprises transferring graphene from a second substrate to the first substrate. Previously presented
The method of claim 1, wherein depositing at least one of the first, second, third and fourth layers of graphene further comprising depositing at least one polymer, the at least one polymer having the graphene contained therein such that the graphene is mixed with the at least one polymer. Previously presented
The method of claim 1, further comprising depositing alternating layers of low and high refraction dielectric materials onto the surface of the silicon substrate prior to depositing the first layer of graphene. Previously presented
The method of claim 1, further comprising patterning the fourth layer of graphene such that the fourth layer of graphene exhibits surface plasmon resonance when exposed to desired frequencies of optical radiation. Previously presented
-9. Canceled
Canceled
A backside-illuminated CMOS detector comprising: a silicon substrate; and at least one layer of graphene-epoxy material consisting of graphene mixed within an optical epoxy adhesive oligomer disposed on a surface of the silicon substrate, the graphene- epoxy material having a thickness in a range of about 50 microns to about 120 microns and including a concentration of graphene in the optical epoxy adhesive oligomer that is about 2% by weight, the at least one layer of graphene-epoxy material including a first layer of graphene onto a surface of a silicon substrate of the optical device, a first nano-layer of dielectric material onto the first layer of graphene, a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure, a third layer of graphene onto the second layer of graphene, a second nano-layer of dielectric material onto the third layer of graphene, and a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nano-layer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Currently amended
The backside-illuminated CMOS detector of claim 12, wherein the at least one layer of graphene-epoxy material is patterned. Original
The backside-illuminated CMOS detector of claim 12, wherein the thickness of the at least one layer of graphene-epoxy material is about 100 microns. Original
-1 8. Canceled
Canceled
The backside-illuminated CMOS detector of claim [[18]] 12, wherein the graphene-epoxy material is about 75% to about 85% optically transmissive in the spectral range. Currently amended
The backside-illuminated CMOS detector of claim 19, wherein the graphene-epoxy material is configured to block unwanted light radiation outside the spectral range. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
sacrificial limiter filter for backside-illuminated FPA or CCD camera
Materials described outside the worked examples.
graphene
C
dielectric material (nano-layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmission of graphene layer(s) in spectral range 2-8 microns | ≥ 70 | C |
optical transmissivity of graphene-epoxy material in spectral range 2-8 microns | 75–85 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,217,875Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an example of a Broadband Graphene-Based Optical Limiter (BGBOL) including a frontal arrangement of a single, dual- or multi- layer of graphene …
FIG. 2 illustrates an example of a process for transferring CVD grown graphene from a copper or a nickel substrate onto a separate substrate, such as a silicon …
FIG. 3 is a dark field microscopy image of laser damage to an unprotected commercial 5 backside- illuminated (BSI) sensor. The laser damage was induced by 532 …
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
FIGS. 5A and 5B detail an exemplary energy-dispersive x-ray (EDX) spectroscopy 10 spectral response (
FIGS. 6A and 6B illustrate two images of graphene-epoxy layers deposited onto glass substrates with respective different concentrations of graphene clusters;
FIG. 7 is a chart illustrating the limiting effect of a graphene polymer SLF having an approximately 100 micron thick polymer film deposited onto a fused silica …
FIGS. 8A and 8B show two dark field microscopy images comparing laser damage on a conventional glass substrate (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a sacrificial limiter filter for an optical device, the method comprising: depositing a first layer of graphene onto a surface of a silicon substrate of the optical device, wherein the optical device is a backside-illuminated focal plane array (FPA) or a backside-illuminated charge coupled device (CCD) camera; depositing a first nano-layer of dielectric material onto the first layer of graphene; depositing a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure; depositing a third layer of graphene onto the second layer of graphene; depositing a second nano-layer of dielectric material onto the third layer of graphene; and depositing a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nanolayer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Previously presented
The method of claim 1, wherein depositing the first layer of graphene comprises growing the first layer of graphene onto the surface of the silicon substrate. Previously presented
The method of claim 1, wherein the silicon substrate is a first substrate and depositing at least one of the first, second, third and fourth layers of graphene comprises transferring graphene from a second substrate to the first substrate. Previously presented
The method of claim 1, wherein depositing at least one of the first, second, third and fourth layers of graphene further comprising depositing at least one polymer, the at least one polymer having the graphene contained therein such that the graphene is mixed with the at least one polymer. Previously presented
The method of claim 1, further comprising depositing alternating layers of low and high refraction dielectric materials onto the surface of the silicon substrate prior to depositing the first layer of graphene. Previously presented
The method of claim 1, further comprising patterning the fourth layer of graphene such that the fourth layer of graphene exhibits surface plasmon resonance when exposed to desired frequencies of optical radiation. Previously presented
-9. Canceled
Canceled
A backside-illuminated CMOS detector comprising: a silicon substrate; and at least one layer of graphene-epoxy material consisting of graphene mixed within an optical epoxy adhesive oligomer disposed on a surface of the silicon substrate, the graphene- epoxy material having a thickness in a range of about 50 microns to about 120 microns and including a concentration of graphene in the optical epoxy adhesive oligomer that is about 2% by weight, the at least one layer of graphene-epoxy material including a first layer of graphene onto a surface of a silicon substrate of the optical device, a first nano-layer of dielectric material onto the first layer of graphene, a second layer of graphene onto the first nano-layer of dielectric material, the first layer of graphene, the first nano-layer of dielectric material, and the second layer of graphene forming a first dipole conductive structure, a third layer of graphene onto the second layer of graphene, a second nano-layer of dielectric material onto the third layer of graphene, and a fourth layer of graphene onto the second nano-layer of dielectric material, the third layer of graphene, the second nano-layer of dielectric material, and the fourth layer of graphene forming a second dipole conductive structure, wherein the first, second, third, and fourth layers of graphene are configured to absorb and scatter at least a portion of electromagnetic radiation incident on the optical device and transmit at least 70% of electromagnetic radiation in a spectral range between about two and about eight microns. Currently amended
The backside-illuminated CMOS detector of claim 12, wherein the at least one layer of graphene-epoxy material is patterned. Original
The backside-illuminated CMOS detector of claim 12, wherein the thickness of the at least one layer of graphene-epoxy material is about 100 microns. Original
-1 8. Canceled
Canceled
The backside-illuminated CMOS detector of claim [[18]] 12, wherein the graphene-epoxy material is about 75% to about 85% optically transmissive in the spectral range. Currently amended
The backside-illuminated CMOS detector of claim 19, wherein the graphene-epoxy material is configured to block unwanted light radiation outside the spectral range. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
sacrificial limiter filter for backside-illuminated FPA or CCD camera
Materials described outside the worked examples.
graphene
C
dielectric material (nano-layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 includes three separate scanning electron microscopy (SEM) images of the laser damage from
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmission of graphene layer(s) in spectral range 2-8 microns | ≥ 70 | C |
optical transmissivity of graphene-epoxy material in spectral range 2-8 microns | 75–85 |
Related documents with shared materials, methods, properties, or citations.
backside-illuminated CMOS detector with graphene-epoxy sacrificial limiter filter
epoxy oligomer polymer
graphene-epoxy material
silicon substrate
Si
graphene concentration in polymer matrix (by weight) | 0.2–3 | graphene-epoxy material |
— | 0.1–10 W | — |
Thickness | 50–120 µm | — |
Thickness | 30–100 µm | — |
Thickness | 5.2–15 Å | — |
Thickness | 10–30 µm | — |
Thickness | 100–200 µm | — |
Thickness | 10–25 µm | — |
Thickness | 0.1–1 µm | — |
Duration | 2–3 minutes | — |
Thickness | 50–150 µm | — |
backside-illuminated CMOS detector with graphene-epoxy sacrificial limiter filter
epoxy oligomer polymer
graphene-epoxy material
silicon substrate
Si
graphene concentration in polymer matrix (by weight) | 0.2–3 | graphene-epoxy material |
— | 0.1–10 W | — |
Thickness | 50–120 µm | — |
Thickness | 30–100 µm | — |
Thickness | 5.2–15 Å | — |
Thickness | 10–30 µm | — |
Thickness | 100–200 µm | — |
Thickness | 10–25 µm | — |
Thickness | 0.1–1 µm | — |
Duration | 2–3 minutes | — |
Thickness | 50–150 µm | — |
backside-illuminated CMOS detector with graphene-epoxy sacrificial limiter filter
epoxy oligomer polymer
graphene-epoxy material
silicon substrate
Si
graphene concentration in polymer matrix (by weight) | 0.2–3 | graphene-epoxy material |
— | 0.1–10 W | — |
Thickness | 50–120 µm | — |
Thickness | 30–100 µm | — |
Thickness | 5.2–15 Å | — |
Thickness | 10–30 µm | — |
Thickness | 100–200 µm | — |
Thickness | 10–25 µm | — |
Thickness | 0.1–1 µm | — |
Duration | 2–3 minutes | — |
Thickness | 50–150 µm | — |
backside-illuminated CMOS detector with graphene-epoxy sacrificial limiter filter
epoxy oligomer polymer
graphene-epoxy material
silicon substrate
Si
graphene concentration in polymer matrix (by weight) | 0.2–3 | graphene-epoxy material |
— | 0.1–10 W | — |
Thickness | 50–120 µm | — |
Thickness | 30–100 µm | — |
Thickness | 5.2–15 Å | — |
Thickness | 10–30 µm | — |
Thickness | 100–200 µm | — |
Thickness | 10–25 µm | — |
Thickness | 0.1–1 µm | — |
Duration | 2–3 minutes | — |
Thickness | 50–150 µm | — |