Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-aligned Bernal-stacked bilayer graphene device for NanoARPES with in-situ electrostatic gating; hBN substrate intentionally aligned to graphene with twist angle around 0.3°.
1 characterization5 properties2 figures
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
hBN-unaligned Bernal-stacked bilayer graphene device for comparative NanoARPES with in-situ electrostatic gating; twist angle around 15° so moiré effect is minimized.
1 characterization4 properties1 figure
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-aligned Bernal-stacked bilayer graphene device for NanoARPES with in-situ electrostatic gating; hBN substrate intentionally aligned to graphene with twist angle around 0.3°.
1 characterization5 properties2 figures
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
hBN-unaligned Bernal-stacked bilayer graphene device for comparative NanoARPES with in-situ electrostatic gating; twist angle around 15° so moiré effect is minimized.
1 characterization4 properties1 figure
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-aligned Bernal-stacked bilayer graphene device for NanoARPES with in-situ electrostatic gating; hBN substrate intentionally aligned to graphene with twist angle around 0.3°.
1 characterization5 properties2 figures
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
hBN-unaligned Bernal-stacked bilayer graphene device for comparative NanoARPES with in-situ electrostatic gating; twist angle around 15° so moiré effect is minimized.
1 characterization4 properties1 figure
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-aligned Bernal-stacked bilayer graphene device for NanoARPES with in-situ electrostatic gating; hBN substrate intentionally aligned to graphene with twist angle around 0.3°.
1 characterization5 properties2 figures
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
hBN-unaligned Bernal-stacked bilayer graphene device for comparative NanoARPES with in-situ electrostatic gating; twist angle around 15° so moiré effect is minimized.
1 characterization4 properties1 figure
ExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
