Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Luca M. Nashabeh; Héctor Ochoa

doi:10.1103/PhysRevB.87.245408

Paper details

Research paper

TheoreticalComputational Multiscale

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Luca M. Nashabeh, Héctor Ochoa

arXiv·2026·10.1103/PhysRevB.87.245408·arXiv:2605.16218

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

4 properties

SimulatedCStudied MaterialBNSubstrate / Dielectric

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

4 properties

SimulatedCStudied MaterialBNSubstrate / Dielectric

Materials

graphene

Studied Material

Also known as

rhombohedral graphene

Variables

stacking= rhombohedral

studied material

hexagonal boron nitride

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Pseudomagnetic Field Strength	contact-layer pseudomagnetic field	1T	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Pseudomagnetic Field Strength	second-layer pseudomagnetic field	hundredsmT	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Relaxation Length Scale	characteristic decay length of relaxation field	1.6angstrom	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Twist Angle	experimental reference angle discussed in paper	0.77deg	C BN	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—

Properties

Type	Label	Value	Material	Sample	Source
Pseudomagnetic Field Strength	contact-layer pseudomagnetic field	1T	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Pseudomagnetic Field Strength	second-layer pseudomagnetic field	hundredsmT	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Relaxation Length Scale	characteristic decay length of relaxation field	1.6angstrom	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Twist Angle	experimental reference angle discussed in paper	0.77deg	C BN	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—

Properties

Type	Label	Value	Material	Sample	Source
Pseudomagnetic Field Strength	contact-layer pseudomagnetic field	1T	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Pseudomagnetic Field Strength	second-layer pseudomagnetic field	hundredsmT	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Relaxation Length Scale	characteristic decay length of relaxation field	1.6angstrom	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Twist Angle	experimental reference angle discussed in paper	0.77deg	C BN	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—

Properties

Type	Label	Value	Material	Sample	Source
Pseudomagnetic Field Strength	contact-layer pseudomagnetic field	1T	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Pseudomagnetic Field Strength	second-layer pseudomagnetic field	hundredsmT	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Relaxation Length Scale	characteristic decay length of relaxation field	1.6angstrom	C	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—
Twist Angle	experimental reference angle discussed in paper	0.77deg	C BN	Pentalayer rhombohedral graphene on hBN in the η = +1 stacki Pentalayer rhombohedral graphene on hBN in the η = -1 stacki	—

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

Samples

Pentalayer rhombohedral graphene on hBN in the η = +1 stacking configuration.

Pentalayer rhombohedral graphene on hBN in the η = -1 stacking configuration.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations