Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Heqiu Li; B. Andrei Bernevig; Nicolas Regnault

doi:10.1103/physrevx.13.031037

Paper details

Research paper

Theoretical

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Heqiu Li, B. Andrei Bernevig, Nicolas Regnault

2025·10.1103/physrevx.13.031037·arXiv:2504.20140

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

3 properties

SimulatedCStudied MaterialBNSubstrate / Dielectrictwisted rhombohedral pentalayer graphene on aligned hexagonal boron nitrideStudied Material

Materials

rhombohedral pentalayer graphene

Studied Material

Also known as

R₅Gpentalayer graphene

Variables

layer_count= 5

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Energy Gap	single-particle direct gap at MBZ edge	0.1meV	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 1/3 FCI in CN scheme	unstable to charge density wave under small band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 2/3 FCI in AVE scheme	more robust under similar band mixing but suppressed at stronger band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Gap	single-particle direct gap at MBZ edge	0.1meV	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 1/3 FCI in CN scheme	unstable to charge density wave under small band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 2/3 FCI in AVE scheme	more robust under similar band mixing but suppressed at stronger band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Gap	single-particle direct gap at MBZ edge	0.1meV	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 1/3 FCI in CN scheme	unstable to charge density wave under small band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 2/3 FCI in AVE scheme	more robust under similar band mixing but suppressed at stronger band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Gap	single-particle direct gap at MBZ edge	0.1meV	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 1/3 FCI in CN scheme	unstable to charge density wave under small band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—
Phase Stability	ν = 2/3 FCI in AVE scheme	more robust under similar band mixing but suppressed at stronger band mixing	twisted rhombohedral pentalayer graphene on aligned hexagonal boron nitride	Continuum-model and multi-band exact-diagonalization study o	—

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Samples

Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations