Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Heqiu Li; B. Andrei Bernevig; Nicolas Regnault

doi:10.1103/physrevx.13.031037

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Multi-Band Exact Diagonalization and an Iteration Approach to Hunt For Fractional Chern Insulators in Rhombohedral Multilayer Graphene

Heqiu Li, B. Andrei Bernevig, Nicolas Regnault

2025·10.1103/physrevx.13.031037·arXiv:2504.20140

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Continuum-model and multi-band exact-diagonalization study of rhombohedral pentalayer graphene twisted by 0.77° on aligned hBN, with xi=1 stacking and a perpendicular electric field producing a 28 meV interlayer potential.

3 properties

SimulatedCStudied MaterialBNSubstrate / Dielectrictwisted rhombohedral pentalayer graphene on aligned hexagonal boron nitrideStudied Material

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