Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.