Research paperExperimental CharacterizationTheoreticalhBN alignment orientation controls moiré strength in rhombohedral grapheneMatan Uzan, Weifeng Zhi, Matan Bocarsly, Junkai Dong et al.2025·arXiv:2507.20647AbstractRhombohedral multilayer graphene aligned to hexagonal boron nitride (hBN) exhibits moiré-induced correlated states whose strength depends on a binary hBN alignment orientation. By comparing nearly identical rhombohedral pentalayer graphene/hBN devices with different alignment orientation and analyzing transport together with theory, the paper shows that the orientation strongly modifies the moiré potential and the resulting symmetry-broken phases.Read more
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 1.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 0.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Continuum-model single-particle system for rhombohedral pentalayer graphene aligned to hBN.No measurements recordedSimulatedCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalhBN alignment orientation controls moiré strength in rhombohedral grapheneMatan Uzan, Weifeng Zhi, Matan Bocarsly, Junkai Dong et al.2025·arXiv:2507.20647AbstractRhombohedral multilayer graphene aligned to hexagonal boron nitride (hBN) exhibits moiré-induced correlated states whose strength depends on a binary hBN alignment orientation. By comparing nearly identical rhombohedral pentalayer graphene/hBN devices with different alignment orientation and analyzing transport together with theory, the paper shows that the orientation strongly modifies the moiré potential and the resulting symmetry-broken phases.Read more
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 1.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 0.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Continuum-model single-particle system for rhombohedral pentalayer graphene aligned to hBN.No measurements recordedSimulatedCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalhBN alignment orientation controls moiré strength in rhombohedral grapheneMatan Uzan, Weifeng Zhi, Matan Bocarsly, Junkai Dong et al.2025·arXiv:2507.20647AbstractRhombohedral multilayer graphene aligned to hexagonal boron nitride (hBN) exhibits moiré-induced correlated states whose strength depends on a binary hBN alignment orientation. By comparing nearly identical rhombohedral pentalayer graphene/hBN devices with different alignment orientation and analyzing transport together with theory, the paper shows that the orientation strongly modifies the moiré potential and the resulting symmetry-broken phases.Read more
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 1.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 0.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Continuum-model single-particle system for rhombohedral pentalayer graphene aligned to hBN.No measurements recordedSimulatedCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalhBN alignment orientation controls moiré strength in rhombohedral grapheneMatan Uzan, Weifeng Zhi, Matan Bocarsly, Junkai Dong et al.2025·arXiv:2507.20647AbstractRhombohedral multilayer graphene aligned to hexagonal boron nitride (hBN) exhibits moiré-induced correlated states whose strength depends on a binary hBN alignment orientation. By comparing nearly identical rhombohedral pentalayer graphene/hBN devices with different alignment orientation and analyzing transport together with theory, the paper shows that the orientation strongly modifies the moiré potential and the resulting symmetry-broken phases.Read more
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 1.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Representative dual-gated rhombohedral pentalayer graphene device aligned to hBN with alignment orientation xi = 0.1 preparation1 characterization2 properties1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Continuum-model single-particle system for rhombohedral pentalayer graphene aligned to hBN.No measurements recordedSimulatedCStudied MaterialBNSubstrate / DielectricExpand