Research paperComputational DFTTheoreticalIsland Sliding Barriers: A first-principles metric for determining remote epitaxy viabilityQuinn T. Campbell, Manny Xavier de Jesus Lopez, Anthony Rice, Timothy J. Ruggles et al.arXiv preprint·2026·arXiv:2603.10968AbstractRemote epitaxy is a promising growth mode in which a 2D van der Waals layer, usually graphene, is placed on a substrate before epitaxial growth. This paper uses first-principles calculations to evaluate candidate metrics for remote epitaxy viability across several substrate/film combinations. The authors find that electrostatic potential and atomic adsorption are insufficient predictors, while the sliding barrier of small islands on graphene provides a robust criterion correlating with experimentally observed remote-epitaxy activity. The work argues that remote epitaxy is governed by island-migration kinetics on graphene.Read more
DFT slab model for SiC with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialSiCStudied MaterialExpand
DFT slab model for GaAs with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT slab model for GaN with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on GaAs(100) with 1-layer graphene.3 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT island-sliding model for Ge on GaAs(100) with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
DFT island-sliding model for AlN on SiC 6√3 graphene with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialSiCStudied MaterialAlNStudied MaterialExpand
DFT island-sliding model for GaN on GaN(001) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on Ge(110) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
Research paperComputational DFTTheoreticalIsland Sliding Barriers: A first-principles metric for determining remote epitaxy viabilityQuinn T. Campbell, Manny Xavier de Jesus Lopez, Anthony Rice, Timothy J. Ruggles et al.arXiv preprint·2026·arXiv:2603.10968AbstractRemote epitaxy is a promising growth mode in which a 2D van der Waals layer, usually graphene, is placed on a substrate before epitaxial growth. This paper uses first-principles calculations to evaluate candidate metrics for remote epitaxy viability across several substrate/film combinations. The authors find that electrostatic potential and atomic adsorption are insufficient predictors, while the sliding barrier of small islands on graphene provides a robust criterion correlating with experimentally observed remote-epitaxy activity. The work argues that remote epitaxy is governed by island-migration kinetics on graphene.Read more
DFT slab model for SiC with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialSiCStudied MaterialExpand
DFT slab model for GaAs with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT slab model for GaN with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on GaAs(100) with 1-layer graphene.3 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT island-sliding model for Ge on GaAs(100) with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
DFT island-sliding model for AlN on SiC 6√3 graphene with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialSiCStudied MaterialAlNStudied MaterialExpand
DFT island-sliding model for GaN on GaN(001) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on Ge(110) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
Research paperComputational DFTTheoreticalIsland Sliding Barriers: A first-principles metric for determining remote epitaxy viabilityQuinn T. Campbell, Manny Xavier de Jesus Lopez, Anthony Rice, Timothy J. Ruggles et al.arXiv preprint·2026·arXiv:2603.10968AbstractRemote epitaxy is a promising growth mode in which a 2D van der Waals layer, usually graphene, is placed on a substrate before epitaxial growth. This paper uses first-principles calculations to evaluate candidate metrics for remote epitaxy viability across several substrate/film combinations. The authors find that electrostatic potential and atomic adsorption are insufficient predictors, while the sliding barrier of small islands on graphene provides a robust criterion correlating with experimentally observed remote-epitaxy activity. The work argues that remote epitaxy is governed by island-migration kinetics on graphene.Read more
DFT slab model for SiC with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialSiCStudied MaterialExpand
DFT slab model for GaAs with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT slab model for GaN with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on GaAs(100) with 1-layer graphene.3 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT island-sliding model for Ge on GaAs(100) with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
DFT island-sliding model for AlN on SiC 6√3 graphene with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialSiCStudied MaterialAlNStudied MaterialExpand
DFT island-sliding model for GaN on GaN(001) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on Ge(110) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
Research paperComputational DFTTheoreticalIsland Sliding Barriers: A first-principles metric for determining remote epitaxy viabilityQuinn T. Campbell, Manny Xavier de Jesus Lopez, Anthony Rice, Timothy J. Ruggles et al.arXiv preprint·2026·arXiv:2603.10968AbstractRemote epitaxy is a promising growth mode in which a 2D van der Waals layer, usually graphene, is placed on a substrate before epitaxial growth. This paper uses first-principles calculations to evaluate candidate metrics for remote epitaxy viability across several substrate/film combinations. The authors find that electrostatic potential and atomic adsorption are insufficient predictors, while the sliding barrier of small islands on graphene provides a robust criterion correlating with experimentally observed remote-epitaxy activity. The work argues that remote epitaxy is governed by island-migration kinetics on graphene.Read more
DFT slab model for SiC with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialSiCStudied MaterialExpand
DFT slab model for GaAs with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT slab model for GaN with graphene overlayer used for charge-density decay and atom adsorption analysis; bottom layers hydrogen-passivated.No measurements recordedSimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on GaAs(100) with 1-layer graphene.3 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialExpand
DFT island-sliding model for Ge on GaAs(100) with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand
DFT island-sliding model for AlN on SiC 6√3 graphene with 1-layer graphene.2 propertiesSimulated Supercell DftCStudied MaterialSiCStudied MaterialAlNStudied MaterialExpand
DFT island-sliding model for GaN on GaN(001) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaNStudied MaterialExpand
DFT island-sliding model for GaAs on Ge(110) with 1-layer graphene.1 propertySimulated Supercell DftCStudied MaterialGaAsStudied MaterialGeStudied MaterialExpand