Research paper
Experimental CharacterizationComputational Kinetic ModelTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties2 figures
1 characterization6 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Microscopic signatures of Chern number sign reversal in twisted bilayer WSe2
Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
ESTABLISHING A UNIFORMLY THIN DIELECTRIC LAYER ON GRAPHENE IN A SEMICONDUCTOR DEVICE WITHOUT AFFECTING THE PROPERTIES OF GRAPHENE
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Island Sliding Barriers: A first-principles metric for determining remote epitaxy viability
Giant Hole-doping in 2H-WSe2 via Ta Substitution
Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties2 figures
1 characterization6 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Microscopic signatures of Chern number sign reversal in twisted bilayer WSe2
Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
ESTABLISHING A UNIFORMLY THIN DIELECTRIC LAYER ON GRAPHENE IN A SEMICONDUCTOR DEVICE WITHOUT AFFECTING THE PROPERTIES OF GRAPHENE
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Island Sliding Barriers: A first-principles metric for determining remote epitaxy viability
Giant Hole-doping in 2H-WSe2 via Ta Substitution
Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties2 figures
1 characterization6 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Microscopic signatures of Chern number sign reversal in twisted bilayer WSe2
Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
ESTABLISHING A UNIFORMLY THIN DIELECTRIC LAYER ON GRAPHENE IN A SEMICONDUCTOR DEVICE WITHOUT AFFECTING THE PROPERTIES OF GRAPHENE
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Island Sliding Barriers: A first-principles metric for determining remote epitaxy viability
Giant Hole-doping in 2H-WSe2 via Ta Substitution
Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties2 figures
1 characterization6 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Microscopic signatures of Chern number sign reversal in twisted bilayer WSe2
Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
ESTABLISHING A UNIFORMLY THIN DIELECTRIC LAYER ON GRAPHENE IN A SEMICONDUCTOR DEVICE WITHOUT AFFECTING THE PROPERTIES OF GRAPHENE
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Island Sliding Barriers: A first-principles metric for determining remote epitaxy viability
Giant Hole-doping in 2H-WSe2 via Ta Substitution
Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures