ExperimentalGaAsStudied MaterialAlAsStudied Material
Three-superlattice GaAs/AlAs heterostructure realizing a topological phonon molecule with two coupled interface states and a tunable central DBR reflectivity.
1 preparation1 characterization3 figures
ExperimentalGaAsStudied MaterialAlAsStudied Material
Extended concatenated GaAs/AlAs superlattice supporting a chain of up to N = 6 coupled interface states and a narrow topological miniband.
ExperimentalGaAsStudied MaterialAlAsStudied Material
Three-superlattice GaAs/AlAs heterostructure realizing a topological phonon molecule with two coupled interface states and a tunable central DBR reflectivity.
1 preparation1 characterization3 figures
ExperimentalGaAsStudied MaterialAlAsStudied Material
Extended concatenated GaAs/AlAs superlattice supporting a chain of up to N = 6 coupled interface states and a narrow topological miniband.
ExperimentalGaAsStudied MaterialAlAsStudied Material
Three-superlattice GaAs/AlAs heterostructure realizing a topological phonon molecule with two coupled interface states and a tunable central DBR reflectivity.
1 preparation1 characterization3 figures
ExperimentalGaAsStudied MaterialAlAsStudied Material
Extended concatenated GaAs/AlAs superlattice supporting a chain of up to N = 6 coupled interface states and a narrow topological miniband.
ExperimentalGaAsStudied MaterialAlAsStudied Material
Three-superlattice GaAs/AlAs heterostructure realizing a topological phonon molecule with two coupled interface states and a tunable central DBR reflectivity.
1 preparation1 characterization3 figures
ExperimentalGaAsStudied MaterialAlAsStudied Material
Extended concatenated GaAs/AlAs superlattice supporting a chain of up to N = 6 coupled interface states and a narrow topological miniband.