Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Mohit Kumar Jat; Priya Tiwari; Robin Bajaj; Ishita Shitut; Shinjan Mandal; Kenji Watanabe; Takashi Taniguchi; H. R. Krishnamurthy; Manish Jain; Aveek Bid

doi:10.1021/acs.nanolett.9b04058

Paper details

Research paper

Experimental CharacterizationTheoretical

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Mohit Kumar Jat, Priya Tiwari, Robin Bajaj, Ishita Shitut et al.

2023·10.1021/acs.nanolett.9b04058·arXiv:2304.01720

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

1 characterization6 properties2 figures

ExperimentalCStudied MaterialhBNSubstrate / Dielectric

Materials

bilayer graphene

Studied Material

Also known as

BLGgraphene

Variables

layer_count= 2

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	bottom-interface first-order moiré sub-band filling density	2.361e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	top-interface first-order moiré sub-band filling density	2.81e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	bottom-interface moiré wavelength	13.97nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	top-interface moiré wavelength	12.84nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Supermoiré Wavelength	supermoiré unit-cell size	35nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	supermoiré density scale	0.391e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	bottom-interface first-order moiré sub-band filling density	2.361e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	top-interface first-order moiré sub-band filling density	2.81e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	bottom-interface moiré wavelength	13.97nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	top-interface moiré wavelength	12.84nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Supermoiré Wavelength	supermoiré unit-cell size	35nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	supermoiré density scale	0.391e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	bottom-interface first-order moiré sub-band filling density	2.361e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	top-interface first-order moiré sub-band filling density	2.81e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	bottom-interface moiré wavelength	13.97nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	top-interface moiré wavelength	12.84nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Supermoiré Wavelength	supermoiré unit-cell size	35nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	supermoiré density scale	0.391e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	bottom-interface first-order moiré sub-band filling density	2.361e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	top-interface first-order moiré sub-band filling density	2.81e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	bottom-interface moiré wavelength	13.97nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Moiré Wavelength	top-interface moiré wavelength	12.84nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Supermoiré Wavelength	supermoiré unit-cell size	35nm	C hBN	Doubly aligned bilayer graphene encapsulated between top and	—
Carrier Density	supermoiré density scale	0.391e16 m⁻²	C	Doubly aligned bilayer graphene encapsulated between top and	—

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

Samples

Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations