Research paperExperimental CharacterizationTheoreticalHigher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potentialMohit Kumar Jat, Priya Tiwari, Robin Bajaj, Ishita Shitut et al.2023·10.1021/acs.nanolett.9b04058·arXiv:2304.01720AbstractThis letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained within the continuum model.Read more
Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalHigher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potentialMohit Kumar Jat, Priya Tiwari, Robin Bajaj, Ishita Shitut et al.2023·10.1021/acs.nanolett.9b04058·arXiv:2304.01720AbstractThis letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained within the continuum model.Read more
Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalHigher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potentialMohit Kumar Jat, Priya Tiwari, Robin Bajaj, Ishita Shitut et al.2023·10.1021/acs.nanolett.9b04058·arXiv:2304.01720AbstractThis letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained within the continuum model.Read more
Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalHigher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potentialMohit Kumar Jat, Priya Tiwari, Robin Bajaj, Ishita Shitut et al.2023·10.1021/acs.nanolett.9b04058·arXiv:2304.01720AbstractThis letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained within the continuum model.Read more
Doubly aligned bilayer graphene encapsulated between top and bottom hBN in a dual-gated field-effect transistor architecture.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricExpand