Research paperExperimental CharacterizationTheoreticalObservation of time-reversal symmetric Hall effect in graphene-WSe₂ heterostructures at room temperaturePriya Tiwari, Divya Sahani, Atasi Chakraborty, Kamal Das et al.arXiv·2023·10.1021/acsnano.0c07524·arXiv:2301.01912AbstractIn this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe₂ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.Read more
Dual-gated hBN/graphene/WSe₂/hBN heterostructure device (main device SW₁) fabricated by dry transfer with 1D Cr/Au contacts and a top gate.4 preparations1 characterization1 property2 figuresExperimentalCStudied MaterialWSe₂Studied MaterialhBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalObservation of time-reversal symmetric Hall effect in graphene-WSe₂ heterostructures at room temperaturePriya Tiwari, Divya Sahani, Atasi Chakraborty, Kamal Das et al.arXiv·2023·10.1021/acsnano.0c07524·arXiv:2301.01912AbstractIn this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe₂ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.Read more
Dual-gated hBN/graphene/WSe₂/hBN heterostructure device (main device SW₁) fabricated by dry transfer with 1D Cr/Au contacts and a top gate.4 preparations1 characterization1 property2 figuresExperimentalCStudied MaterialWSe₂Studied MaterialhBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalObservation of time-reversal symmetric Hall effect in graphene-WSe₂ heterostructures at room temperaturePriya Tiwari, Divya Sahani, Atasi Chakraborty, Kamal Das et al.arXiv·2023·10.1021/acsnano.0c07524·arXiv:2301.01912AbstractIn this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe₂ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.Read more
Dual-gated hBN/graphene/WSe₂/hBN heterostructure device (main device SW₁) fabricated by dry transfer with 1D Cr/Au contacts and a top gate.4 preparations1 characterization1 property2 figuresExperimentalCStudied MaterialWSe₂Studied MaterialhBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalObservation of time-reversal symmetric Hall effect in graphene-WSe₂ heterostructures at room temperaturePriya Tiwari, Divya Sahani, Atasi Chakraborty, Kamal Das et al.arXiv·2023·10.1021/acsnano.0c07524·arXiv:2301.01912AbstractIn this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe₂ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.Read more
Dual-gated hBN/graphene/WSe₂/hBN heterostructure device (main device SW₁) fabricated by dry transfer with 1D Cr/Au contacts and a top gate.4 preparations1 characterization1 property2 figuresExperimentalCStudied MaterialWSe₂Studied MaterialhBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactExpand