Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states | Matter42 Literature
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Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Odysseas Williams, Stefan Faelt, Christian Reichl, Werner Wegscheider
2026·arXiv:2606.10754
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device 2λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; higher electron density than sample 3λ.
ExperimentalGaAsStudied MaterialAlAsStudied MaterialAl0.1Ga0.9AsStudied MaterialSiStudied Material
Device 3λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; lower electron density than sample 2λ.
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Odysseas Williams, Stefan Faelt, Christian Reichl, Werner Wegscheider
2026·arXiv:2606.10754
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device 2λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; higher electron density than sample 3λ.
ExperimentalGaAsStudied MaterialAlAsStudied MaterialAl0.1Ga0.9AsStudied MaterialSiStudied Material
Device 3λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; lower electron density than sample 2λ.
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Odysseas Williams, Stefan Faelt, Christian Reichl, Werner Wegscheider
2026·arXiv:2606.10754
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device 2λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; higher electron density than sample 3λ.
ExperimentalGaAsStudied MaterialAlAsStudied MaterialAl0.1Ga0.9AsStudied MaterialSiStudied Material
Device 3λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; lower electron density than sample 2λ.
Spin polarisation signatures of Fractionally Charged Skyrmions in Fractional Quantum Hall states
Odysseas Williams, Stefan Faelt, Christian Reichl, Werner Wegscheider
2026·arXiv:2606.10754
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device 2λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; higher electron density than sample 3λ.
ExperimentalGaAsStudied MaterialAlAsStudied MaterialAl0.1Ga0.9AsStudied MaterialSiStudied Material
Device 3λ: GaAs quantum well coupled to an optical microcavity with GaAs QW, AlAs/Al0.1Ga0.9As DBRs, and Si delta-doping sites; lower electron density than sample 2λ.