Research paperExperimental CharacterizationEffect of current on terahertz plasmons in AlGaN/GaN heterostructuresM. Dub, P. Sai, Y. Ivonyak, P. Prystawko et al.2025·10.1063/5.0285068·arXiv:2506.10553AbstractTerahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies with increase of the lateral current was observed for both types of structures. The change of the electron concentration profile and Joule heating were identified as the main phenomena responsible for the shift of plasma resonant frequency.Read more
Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.2 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of current on terahertz plasmons in AlGaN/GaN heterostructuresM. Dub, P. Sai, Y. Ivonyak, P. Prystawko et al.2025·10.1063/5.0285068·arXiv:2506.10553AbstractTerahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies with increase of the lateral current was observed for both types of structures. The change of the electron concentration profile and Joule heating were identified as the main phenomena responsible for the shift of plasma resonant frequency.Read more
Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.2 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of current on terahertz plasmons in AlGaN/GaN heterostructuresM. Dub, P. Sai, Y. Ivonyak, P. Prystawko et al.2025·10.1063/5.0285068·arXiv:2506.10553AbstractTerahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies with increase of the lateral current was observed for both types of structures. The change of the electron concentration profile and Joule heating were identified as the main phenomena responsible for the shift of plasma resonant frequency.Read more
Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.2 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of current on terahertz plasmons in AlGaN/GaN heterostructuresM. Dub, P. Sai, Y. Ivonyak, P. Prystawko et al.2025·10.1063/5.0285068·arXiv:2506.10553AbstractTerahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies with increase of the lateral current was observed for both types of structures. The change of the electron concentration profile and Joule heating were identified as the main phenomena responsible for the shift of plasma resonant frequency.Read more
Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.2 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.3 preparations3 characterizations4 properties3 figuresExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
