Patent
US 9,394,178WAFER SCALE EPITAXIAL GRAPHENE TRANSFER
STEPHEN W. BEDELL
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,394,178Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a substrate having a spreading layer formed thereon in accordance with the present principles; [0012]
FIG. 2B is a cross-sectional view showing a stressor layer formed on a graphene spreading layer on a SiC substrate in accordance with the present principles; …
FIG. 3B is a cross-sectional view showing a handle substrate adhered to the stressor layer for handling a split off one or more monolayers of graphene from a …
FIG. 4 is a cross-sectional view of the handle substrate over a second substrate in which the monolayer will be transferred in accordance with the present …
FIG. 5 is a cross-sectional view of the second substrate with the monolayer formed thereon in accordance with the present principles; YO R₉₂₀₁₃₀₀₀₈US₂ (163-623 …
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
FIG. 7 is a block/flow diagram showing methods for transfer of a monolayer in accordance with illustrative embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfer of a two-dimensional material, comprising: forming a stressor layer on a spreading layer, the spreading layer comprising a two- dimensional material having at least one monolayer on a first substrate; exfeliating-at4--eas a-closest-monolayer by propagating a crack along a monola y er interface of the spreading la y er to split ting- the spreading layer into portions along the crack to exfoliate at least a closet monola y er, wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 1, wherein the first substrate includes SiC and the spreading layer includes graphene, and wherein forming the spreading layer includes heating the Si C substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 1, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 1, wherein the stressor layer is configured to apply -2- stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 1, further comprising bonding a handle substrate to the stressor layer to affect the step of exfoliating.
The method as recited in claim 1, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method of Claim 1, wherein splitting the spreading layer into portions includes mechanical splitting.
A method for transfer of graphene, comprising: -3- forming a stressor layer on a spreading layer, the spreading layer having at least one monolayer of graphene on a SiC substrate; propa g atin g a crack alon g a monola y er interface of the spreading layer to split ting- the spreading layer into portions along the crack to exfoliate byexfelli-ating-at least a closest monolayer from the spreading layer 1 wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 11, wherein forming the spreading layer includes heating the SiC substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 11, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the stressor layer is configured to apply stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method as recited in claim 11, further stressor layer to affect the step of exfoliating.
Materials described outside the worked examples.
two-dimensional material
stressor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–900 mTorr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,394,178Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a substrate having a spreading layer formed thereon in accordance with the present principles; [0012]
FIG. 2B is a cross-sectional view showing a stressor layer formed on a graphene spreading layer on a SiC substrate in accordance with the present principles; …
FIG. 3B is a cross-sectional view showing a handle substrate adhered to the stressor layer for handling a split off one or more monolayers of graphene from a …
FIG. 4 is a cross-sectional view of the handle substrate over a second substrate in which the monolayer will be transferred in accordance with the present …
FIG. 5 is a cross-sectional view of the second substrate with the monolayer formed thereon in accordance with the present principles; YO R₉₂₀₁₃₀₀₀₈US₂ (163-623 …
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
FIG. 7 is a block/flow diagram showing methods for transfer of a monolayer in accordance with illustrative embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfer of a two-dimensional material, comprising: forming a stressor layer on a spreading layer, the spreading layer comprising a two- dimensional material having at least one monolayer on a first substrate; exfeliating-at4--eas a-closest-monolayer by propagating a crack along a monola y er interface of the spreading la y er to split ting- the spreading layer into portions along the crack to exfoliate at least a closet monola y er, wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 1, wherein the first substrate includes SiC and the spreading layer includes graphene, and wherein forming the spreading layer includes heating the Si C substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 1, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 1, wherein the stressor layer is configured to apply -2- stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 1, further comprising bonding a handle substrate to the stressor layer to affect the step of exfoliating.
The method as recited in claim 1, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method of Claim 1, wherein splitting the spreading layer into portions includes mechanical splitting.
A method for transfer of graphene, comprising: -3- forming a stressor layer on a spreading layer, the spreading layer having at least one monolayer of graphene on a SiC substrate; propa g atin g a crack alon g a monola y er interface of the spreading layer to split ting- the spreading layer into portions along the crack to exfoliate byexfelli-ating-at least a closest monolayer from the spreading layer 1 wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 11, wherein forming the spreading layer includes heating the SiC substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 11, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the stressor layer is configured to apply stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method as recited in claim 11, further stressor layer to affect the step of exfoliating.
Materials described outside the worked examples.
two-dimensional material
stressor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–900 mTorr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,394,178Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a substrate having a spreading layer formed thereon in accordance with the present principles; [0012]
FIG. 2B is a cross-sectional view showing a stressor layer formed on a graphene spreading layer on a SiC substrate in accordance with the present principles; …
FIG. 3B is a cross-sectional view showing a handle substrate adhered to the stressor layer for handling a split off one or more monolayers of graphene from a …
FIG. 4 is a cross-sectional view of the handle substrate over a second substrate in which the monolayer will be transferred in accordance with the present …
FIG. 5 is a cross-sectional view of the second substrate with the monolayer formed thereon in accordance with the present principles; YO R₉₂₀₁₃₀₀₀₈US₂ (163-623 …
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
FIG. 7 is a block/flow diagram showing methods for transfer of a monolayer in accordance with illustrative embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfer of a two-dimensional material, comprising: forming a stressor layer on a spreading layer, the spreading layer comprising a two- dimensional material having at least one monolayer on a first substrate; exfeliating-at4--eas a-closest-monolayer by propagating a crack along a monola y er interface of the spreading la y er to split ting- the spreading layer into portions along the crack to exfoliate at least a closet monola y er, wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 1, wherein the first substrate includes SiC and the spreading layer includes graphene, and wherein forming the spreading layer includes heating the Si C substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 1, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 1, wherein the stressor layer is configured to apply -2- stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 1, further comprising bonding a handle substrate to the stressor layer to affect the step of exfoliating.
The method as recited in claim 1, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method of Claim 1, wherein splitting the spreading layer into portions includes mechanical splitting.
A method for transfer of graphene, comprising: -3- forming a stressor layer on a spreading layer, the spreading layer having at least one monolayer of graphene on a SiC substrate; propa g atin g a crack alon g a monola y er interface of the spreading layer to split ting- the spreading layer into portions along the crack to exfoliate byexfelli-ating-at least a closest monolayer from the spreading layer 1 wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 11, wherein forming the spreading layer includes heating the SiC substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 11, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the stressor layer is configured to apply stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method as recited in claim 11, further stressor layer to affect the step of exfoliating.
Materials described outside the worked examples.
two-dimensional material
stressor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–900 mTorr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,394,178Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a substrate having a spreading layer formed thereon in accordance with the present principles; [0012]
FIG. 2B is a cross-sectional view showing a stressor layer formed on a graphene spreading layer on a SiC substrate in accordance with the present principles; …
FIG. 3B is a cross-sectional view showing a handle substrate adhered to the stressor layer for handling a split off one or more monolayers of graphene from a …
FIG. 4 is a cross-sectional view of the handle substrate over a second substrate in which the monolayer will be transferred in accordance with the present …
FIG. 5 is a cross-sectional view of the second substrate with the monolayer formed thereon in accordance with the present principles; YO R₉₂₀₁₃₀₀₀₈US₂ (163-623 …
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
FIG. 7 is a block/flow diagram showing methods for transfer of a monolayer in accordance with illustrative embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfer of a two-dimensional material, comprising: forming a stressor layer on a spreading layer, the spreading layer comprising a two- dimensional material having at least one monolayer on a first substrate; exfeliating-at4--eas a-closest-monolayer by propagating a crack along a monola y er interface of the spreading la y er to split ting- the spreading layer into portions along the crack to exfoliate at least a closet monola y er, wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 1, wherein the first substrate includes SiC and the spreading layer includes graphene, and wherein forming the spreading layer includes heating the Si C substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 1, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 1, wherein the stressor layer is configured to apply -2- stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 1, further comprising bonding a handle substrate to the stressor layer to affect the step of exfoliating.
The method as recited in claim 1, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method of Claim 1, wherein splitting the spreading layer into portions includes mechanical splitting.
A method for transfer of graphene, comprising: -3- forming a stressor layer on a spreading layer, the spreading layer having at least one monolayer of graphene on a SiC substrate; propa g atin g a crack alon g a monola y er interface of the spreading layer to split ting- the spreading layer into portions along the crack to exfoliate byexfelli-ating-at least a closest monolayer from the spreading layer 1 wherein the at least closest monolayer remains on the stressor layer; transferring the at least closest monolayer on the stressor layer; and etching away the stressor layer to release the at least closest monolayer onto a second substrate.
The method as recited in claim 11, wherein forming the spreading layer includes heating the SiC substrate to a temperature greater than 1000 degrees C.
The method as recited in claim 11, wherein forming the stressor layer includes depositing one of a metal, an oxide and a semiconductor to induce stress in the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the stressor layer is configured to apply stress to the at least closest monolayer of the spreading layer.
The method as recited in claim 11, wherein the at least closest monolayer is exfoliated on a wafer scale.
The method as recited in claim 11, further stressor layer to affect the step of exfoliating.
Materials described outside the worked examples.
two-dimensional material
stressor layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–900 mTorr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
graphene
SiC
stressor layer material (metal, oxide, or semiconductor)
MoS₂
WS₂
boron nitride
BN
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
| — |
GRAPHENE-BASED MEMORY DEVICES AND METHODS THEREFOR
graphene
SiC
stressor layer material (metal, oxide, or semiconductor)
MoS₂
WS₂
boron nitride
BN
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
| — |
GRAPHENE-BASED MEMORY DEVICES AND METHODS THEREFOR
graphene
SiC
stressor layer material (metal, oxide, or semiconductor)
MoS₂
WS₂
boron nitride
BN
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
| — |
GRAPHENE-BASED MEMORY DEVICES AND METHODS THEREFOR
graphene
SiC
stressor layer material (metal, oxide, or semiconductor)
MoS₂
WS₂
boron nitride
BN
FIG. 6 is a graph showing a Raman spectrum of intensity (arbitrary units) versus Raman shift (cm⁻¹) showing a high quality monolayer had been transfe rr ed in …
| — |
GRAPHENE-BASED MEMORY DEVICES AND METHODS THEREFOR