Patent
US 10,354,828sealing layer
mesh
Ni mesh
Ni
Pt mesh
Pt
Pd mesh
Pd
Cu mesh
Cu
Si mesh
Si
Si₃N₄ mesh
Si₃N₄
K₂CsSb photosensitive film
K₂CsSb
Cs₃Sb photosensitive film
Cs₃Sb
Cs₂Te photosensitive film
Cs₂Te
NaI sealing layer
NaI
CsBr sealing layer
CsBr
CsI sealing layer
CsI
MgF₂ sealing layer
MgF₂
SiOx sealing layer
SiOx
hexatricontane (HTC) sealing layer
calcium stearate (CaSt) sealing layer
FIG. 8 shows the x-ray diffraction (XRD) pattern of a single crystalline Cu substrate. [0036]
FIG. 9 shows the XRD pattern of the (110) plane of Cu before and after the deposition of a graphene layer according to the conditions shown in
FIG. 11 is an AFM image of the graphene layer coated on the Cu substrate utilizing the condition shown in
| — |
Pressure | 0–6 torr | — |
Pressure | 0–7 torr | — |
Thickness | 0.1–100 µm | — |
Thickness | 0.3–1.5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–10 µm | — |
Thickness | 1–100 µm | — |
Thickness | 2–20 µm | — |
Duration | 2–6 hours | — |
Thickness | ≤ 40 nm | — |
sealing layer
mesh
Ni mesh
Ni
Pt mesh
Pt
Pd mesh
Pd
Cu mesh
Cu
Si mesh
Si
Si₃N₄ mesh
Si₃N₄
K₂CsSb photosensitive film
K₂CsSb
Cs₃Sb photosensitive film
Cs₃Sb
Cs₂Te photosensitive film
Cs₂Te
NaI sealing layer
NaI
CsBr sealing layer
CsBr
CsI sealing layer
CsI
MgF₂ sealing layer
MgF₂
SiOx sealing layer
SiOx
hexatricontane (HTC) sealing layer
calcium stearate (CaSt) sealing layer
FIG. 8 shows the x-ray diffraction (XRD) pattern of a single crystalline Cu substrate. [0036]
FIG. 9 shows the XRD pattern of the (110) plane of Cu before and after the deposition of a graphene layer according to the conditions shown in
FIG. 11 is an AFM image of the graphene layer coated on the Cu substrate utilizing the condition shown in
| — |
Pressure | 0–6 torr | — |
Pressure | 0–7 torr | — |
Thickness | 0.1–100 µm | — |
Thickness | 0.3–1.5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–10 µm | — |
Thickness | 1–100 µm | — |
Thickness | 2–20 µm | — |
Duration | 2–6 hours | — |
Thickness | ≤ 40 nm | — |
sealing layer
mesh
Ni mesh
Ni
Pt mesh
Pt
Pd mesh
Pd
Cu mesh
Cu
Si mesh
Si
Si₃N₄ mesh
Si₃N₄
K₂CsSb photosensitive film
K₂CsSb
Cs₃Sb photosensitive film
Cs₃Sb
Cs₂Te photosensitive film
Cs₂Te
NaI sealing layer
NaI
CsBr sealing layer
CsBr
CsI sealing layer
CsI
MgF₂ sealing layer
MgF₂
SiOx sealing layer
SiOx
hexatricontane (HTC) sealing layer
calcium stearate (CaSt) sealing layer
FIG. 8 shows the x-ray diffraction (XRD) pattern of a single crystalline Cu substrate. [0036]
FIG. 9 shows the XRD pattern of the (110) plane of Cu before and after the deposition of a graphene layer according to the conditions shown in
FIG. 11 is an AFM image of the graphene layer coated on the Cu substrate utilizing the condition shown in
| — |
Pressure | 0–6 torr | — |
Pressure | 0–7 torr | — |
Thickness | 0.1–100 µm | — |
Thickness | 0.3–1.5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–10 µm | — |
Thickness | 1–100 µm | — |
Thickness | 2–20 µm | — |
Duration | 2–6 hours | — |
Thickness | ≤ 40 nm | — |
sealing layer
mesh
Ni mesh
Ni
Pt mesh
Pt
Pd mesh
Pd
Cu mesh
Cu
Si mesh
Si
Si₃N₄ mesh
Si₃N₄
K₂CsSb photosensitive film
K₂CsSb
Cs₃Sb photosensitive film
Cs₃Sb
Cs₂Te photosensitive film
Cs₂Te
NaI sealing layer
NaI
CsBr sealing layer
CsBr
CsI sealing layer
CsI
MgF₂ sealing layer
MgF₂
SiOx sealing layer
SiOx
hexatricontane (HTC) sealing layer
calcium stearate (CaSt) sealing layer
FIG. 8 shows the x-ray diffraction (XRD) pattern of a single crystalline Cu substrate. [0036]
FIG. 9 shows the XRD pattern of the (110) plane of Cu before and after the deposition of a graphene layer according to the conditions shown in
FIG. 11 is an AFM image of the graphene layer coated on the Cu substrate utilizing the condition shown in
| — |
Pressure | 0–6 torr | — |
Pressure | 0–7 torr | — |
Thickness | 0.1–100 µm | — |
Thickness | 0.3–1.5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–10 µm | — |
Thickness | 1–100 µm | — |
Thickness | 2–20 µm | — |
Duration | 2–6 hours | — |
Thickness | ≤ 40 nm | — |