Patent
US 10,996,353N-TYPE GALLIUM NITRIDE SCINTILLATION FOR FAST-NEUTRON DETECTION
Noel A. Guardala, Veerendra K. Mathur, Johnathan D. Wensman
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,996,353Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an exemplary embodiment of the present invention. [0019]
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The neutron detection method of claim [[1]] 15, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n-type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 2, wherein said photodetector includes a photomultiplier tube. Original
(cancele d) Canceled
(cancele d) Canceled
(cancele d) Canceled
The neutron detection apparatus of claim [[5]] 18, further comprising a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube. Currently amended
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, a photomultiplier tube, and a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions; said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 600 pm; [[,]] said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurements. Currently amended
The neutron detection apparatus of claim [[8]] 9 wherein said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 300 pm. Currently amended
Canceled
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; producing output signals; processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer; selecting said n-type GaN wafer as having a thickness sufficiently small that gamma radiation will not appreciably manifest in said spectroscopic information. Currently amended
The neutron detection method of claim [[11]] 12, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n- type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 13, wherein said photodetector includes a photomultiplier tube, and wherein said photomultiplier tube produces output signals, and wherein the method further comprises processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer. Previously presented
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; selecting said n-type GaN wafer as having a thickness sufficiently small that the neutron detection method is at least substantially insensitive to gamma radiation. Currently amended
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, and a photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n -ty pe GaN wafer occurs upon said elastic recoil of said ions; measurable signals are generated by said photomultiplier tube in response to said scintillation of said n-type GaN wafer; said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurable signals. Currently amended
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
A prototype inventive detector assembly was constructed comprising a 250-micron thick n-type GaN wafer (1-inch diameter, obtained from KYMA Technologies, Inc.) optically bonded to a Hamamatsu R₃₂₉-02 PMT. Multiple experiments were performed using a 3 MV NEC tandem accelerator (Model 9SDH-2) at a Navy facility to produce a mono-energetic 1.0 MeV neutron field by bombarding a ~25-micron thick beryllium target with a 2.7 MeV proton beam. The inventive detector was placed approximately 1 meter from the beryllium target. A fast neutron spectrum was obtained showing a peak corresponding to N-ion recoils at approximately 0.280 MeV (channel 255) from 180-degree neutron elastic scattering.
Layer stacks claimed or described, ordered top of device to substrate.
fast-neutron detection method apparatus (method claims)
fast-neutron detection apparatus
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN wafer thickness (prototype) | 250 micron | GaN |
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US 10,996,353Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an exemplary embodiment of the present invention. [0019]
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The neutron detection method of claim [[1]] 15, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n-type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 2, wherein said photodetector includes a photomultiplier tube. Original
(cancele d) Canceled
(cancele d) Canceled
(cancele d) Canceled
The neutron detection apparatus of claim [[5]] 18, further comprising a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube. Currently amended
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, a photomultiplier tube, and a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions; said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 600 pm; [[,]] said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurements. Currently amended
The neutron detection apparatus of claim [[8]] 9 wherein said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 300 pm. Currently amended
Canceled
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; producing output signals; processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer; selecting said n-type GaN wafer as having a thickness sufficiently small that gamma radiation will not appreciably manifest in said spectroscopic information. Currently amended
The neutron detection method of claim [[11]] 12, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n- type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 13, wherein said photodetector includes a photomultiplier tube, and wherein said photomultiplier tube produces output signals, and wherein the method further comprises processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer. Previously presented
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; selecting said n-type GaN wafer as having a thickness sufficiently small that the neutron detection method is at least substantially insensitive to gamma radiation. Currently amended
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, and a photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n -ty pe GaN wafer occurs upon said elastic recoil of said ions; measurable signals are generated by said photomultiplier tube in response to said scintillation of said n-type GaN wafer; said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurable signals. Currently amended
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
A prototype inventive detector assembly was constructed comprising a 250-micron thick n-type GaN wafer (1-inch diameter, obtained from KYMA Technologies, Inc.) optically bonded to a Hamamatsu R₃₂₉-02 PMT. Multiple experiments were performed using a 3 MV NEC tandem accelerator (Model 9SDH-2) at a Navy facility to produce a mono-energetic 1.0 MeV neutron field by bombarding a ~25-micron thick beryllium target with a 2.7 MeV proton beam. The inventive detector was placed approximately 1 meter from the beryllium target. A fast neutron spectrum was obtained showing a peak corresponding to N-ion recoils at approximately 0.280 MeV (channel 255) from 180-degree neutron elastic scattering.
Layer stacks claimed or described, ordered top of device to substrate.
fast-neutron detection method apparatus (method claims)
fast-neutron detection apparatus
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN wafer thickness (prototype) | 250 micron | GaN |
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US 10,996,353Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an exemplary embodiment of the present invention. [0019]
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The neutron detection method of claim [[1]] 15, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n-type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 2, wherein said photodetector includes a photomultiplier tube. Original
(cancele d) Canceled
(cancele d) Canceled
(cancele d) Canceled
The neutron detection apparatus of claim [[5]] 18, further comprising a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube. Currently amended
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, a photomultiplier tube, and a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions; said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 600 pm; [[,]] said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurements. Currently amended
The neutron detection apparatus of claim [[8]] 9 wherein said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 300 pm. Currently amended
Canceled
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; producing output signals; processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer; selecting said n-type GaN wafer as having a thickness sufficiently small that gamma radiation will not appreciably manifest in said spectroscopic information. Currently amended
The neutron detection method of claim [[11]] 12, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n- type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 13, wherein said photodetector includes a photomultiplier tube, and wherein said photomultiplier tube produces output signals, and wherein the method further comprises processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer. Previously presented
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; selecting said n-type GaN wafer as having a thickness sufficiently small that the neutron detection method is at least substantially insensitive to gamma radiation. Currently amended
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, and a photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n -ty pe GaN wafer occurs upon said elastic recoil of said ions; measurable signals are generated by said photomultiplier tube in response to said scintillation of said n-type GaN wafer; said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurable signals. Currently amended
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
A prototype inventive detector assembly was constructed comprising a 250-micron thick n-type GaN wafer (1-inch diameter, obtained from KYMA Technologies, Inc.) optically bonded to a Hamamatsu R₃₂₉-02 PMT. Multiple experiments were performed using a 3 MV NEC tandem accelerator (Model 9SDH-2) at a Navy facility to produce a mono-energetic 1.0 MeV neutron field by bombarding a ~25-micron thick beryllium target with a 2.7 MeV proton beam. The inventive detector was placed approximately 1 meter from the beryllium target. A fast neutron spectrum was obtained showing a peak corresponding to N-ion recoils at approximately 0.280 MeV (channel 255) from 180-degree neutron elastic scattering.
Layer stacks claimed or described, ordered top of device to substrate.
fast-neutron detection method apparatus (method claims)
fast-neutron detection apparatus
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN wafer thickness (prototype) | 250 micron | GaN |
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US 10,996,353Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an exemplary embodiment of the present invention. [0019]
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The neutron detection method of claim [[1]] 15, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n-type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 2, wherein said photodetector includes a photomultiplier tube. Original
(cancele d) Canceled
(cancele d) Canceled
(cancele d) Canceled
The neutron detection apparatus of claim [[5]] 18, further comprising a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube. Currently amended
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, a photomultiplier tube, and a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions; said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 600 pm; [[,]] said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurements. Currently amended
The neutron detection apparatus of claim [[8]] 9 wherein said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 300 pm. Currently amended
Canceled
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; producing output signals; processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer; selecting said n-type GaN wafer as having a thickness sufficiently small that gamma radiation will not appreciably manifest in said spectroscopic information. Currently amended
The neutron detection method of claim [[11]] 12, wherein said sensing of said scintillation of said n-type GaN wafer includes optically coupling said n- type GaN wafer with a photodetector, and using said photodetector with respect to said scintillation of said n-type GaN wafer. Currently amended
The neutron detection method of claim 13, wherein said photodetector includes a photomultiplier tube, and wherein said photomultiplier tube produces output signals, and wherein the method further comprises processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer. Previously presented
A neutron detection method comprising: irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions; sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n- type GaN wafer is associated with said elastic recoil of said ions; selecting said n-type GaN wafer as having a thickness sufficiently small that the neutron detection method is at least substantially insensitive to gamma radiation. Currently amended
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection method of claim 15, wherein said n- type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, and a photomultiplier tube, wherein: said n -ty pe GaN wafer is made of n-type GaN crystal; said n-type GaN wafer and said photomultiplier tube are optically couple d; said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions; scintillation of said n -ty pe GaN wafer occurs upon said elastic recoil of said ions; measurable signals are generated by said photomultiplier tube in response to said scintillation of said n-type GaN wafer; said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurable signals. Currently amended
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 600 lm. Previously presented
(p reviously presented): The neutron detection apparatus of claim 18, wherein said n-type GaN wafer has a thickness of less than or equal to approximately 300 lm. Previously presented
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
A prototype inventive detector assembly was constructed comprising a 250-micron thick n-type GaN wafer (1-inch diameter, obtained from KYMA Technologies, Inc.) optically bonded to a Hamamatsu R₃₂₉-02 PMT. Multiple experiments were performed using a 3 MV NEC tandem accelerator (Model 9SDH-2) at a Navy facility to produce a mono-energetic 1.0 MeV neutron field by bombarding a ~25-micron thick beryllium target with a 2.7 MeV proton beam. The inventive detector was placed approximately 1 meter from the beryllium target. A fast neutron spectrum was obtained showing a peak corresponding to N-ion recoils at approximately 0.280 MeV (channel 255) from 180-degree neutron elastic scattering.
Layer stacks claimed or described, ordered top of device to substrate.
fast-neutron detection method apparatus (method claims)
fast-neutron detection apparatus
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating an example of a scintillation spectrum showing the response of n-type GaN to a monoenergetic 1.0 MeV accelerator-produced …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN wafer thickness (prototype) | 250 micron | GaN |
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FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
| 600 micron |
GaN |
n-type GaN wafer claimed thickness upper bound (300 micron) | 300 micron | GaN |
N-ion recoil scintillation peak energy from 1.0 MeV neutron elastic scattering (180-degree) | 0.28 MeV | GaN |
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
| 600 micron |
GaN |
n-type GaN wafer claimed thickness upper bound (300 micron) | 300 micron | GaN |
N-ion recoil scintillation peak energy from 1.0 MeV neutron elastic scattering (180-degree) | 0.28 MeV | GaN |
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
| 600 micron |
GaN |
n-type GaN wafer claimed thickness upper bound (300 micron) | 300 micron | GaN |
N-ion recoil scintillation peak energy from 1.0 MeV neutron elastic scattering (180-degree) | 0.28 MeV | GaN |
FIG. 3 is a graph illustrating an example of a fast neutron spectrum in GaN using a broad energy neutron beam of 0.800-1.55 MeV, in accordance with the present …
FIG. 4 is a graph illustrating an example of a fast neutron spectrum produced from irradiation of the GaN detector system with a W cover over the GaN and a …
FIG. 5 is a graph illustrating an example of a GaN scintillation spectrum collected using a D-D neutron generator at a United States Navy facility, collected …
FIG. 6 is a graph illustrating an example of an AmBe spectrum taken at the above-noted Navy facility, in accordance with the present invention. [0024]
FIG. 7 is a graph illustrating an example of a GaN fast neutron spectrum taken at the above-noted Navy facility using a D-T fast neutron generator having four …
| 600 micron |
GaN |
n-type GaN wafer claimed thickness upper bound (300 micron) | 300 micron | GaN |
N-ion recoil scintillation peak energy from 1.0 MeV neutron elastic scattering (180-degree) | 0.28 MeV | GaN |