Patent
US 9,123,641Method for transferring InP film
Aurelie TAUZIN
US
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US 9,123,641Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 to 7 i llustrate one embodiment of the method of the 15 i nvention
Figures 8 to 13 i llustrate a second embodiment of the method of the invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring an InP film onto a stiffener substrate, the method comprising: a) Providing a structure comprising a surface layer of InP and an underlying doped thin InP layer; b) Implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer, c) Placing the surface layer in close contact with a stiffener substrate; and d) Applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
The method according to claim 1, wherein the surface layer is doped with the same dopant as the dopant of the doped thin layer.
The method according to claim 1, wherein the doped thin layer comprises a concentration of electrically active dopants of between 1017 and 1020 at/cm3 so that the doped thin layer has an emissivity of between 0.75 and 0.9.
The method according to claim 1, wherein step a) comprises: i) providing a substrate of resistive InP; ii) implanting dopant ion species such as S, Sn, Zn, Si, Te, Ge or Se in the substrate so as to form a doped buried layer delimiting a surface layer between the implanted surface and the buried layer; 2 Serial No. 13/974,347 GER₂₃ 0 6US (BR079528/EMA/SDO) iii) applying heat treatment to the buried layer so as electrically to activate the dopant ion species and to form a doped thin layer in InP material having an emissivity of between 0.75 and 0.9, in order to obtain the structure.
The method according to claim 1, wherein step a) comprises: j)-providing a substrate comprising a seed layer on its surface; k)-epitaxying a doped thin InP layer on the seed layer; and 1)-epitaxying an InP surface layer on the doped thin layer, the doped thin layer having an emissivity of between 0.75 and 0.9, so as to obtain the structure. withdrawn
The method according to claim 1, wherein the InP surface layer is formed of resistive InP chosen from among intrinsic InP or InP whose doping is compensated by a concentration of electrically activated Fe dopants in the order of 10 "5 to 1016 Fe/cm 3.
The method according to claim 1, wherein step b) comprises a step to implant hydrogen ions at an energy and current density such that the implantation temperature in the doped thin layer is between 120 and 180 ±°C. 3
The method according to claim, 5 wherein the seed layer comprises resistive InP. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
InP film transfer structure
Materials described outside the worked examples.
InP surface layer
InP
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Emissivity | 0.75–0.9 | InP |
Emissivity | 0.4–0.46 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,123,641Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 to 7 i llustrate one embodiment of the method of the 15 i nvention
Figures 8 to 13 i llustrate a second embodiment of the method of the invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring an InP film onto a stiffener substrate, the method comprising: a) Providing a structure comprising a surface layer of InP and an underlying doped thin InP layer; b) Implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer, c) Placing the surface layer in close contact with a stiffener substrate; and d) Applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
The method according to claim 1, wherein the surface layer is doped with the same dopant as the dopant of the doped thin layer.
The method according to claim 1, wherein the doped thin layer comprises a concentration of electrically active dopants of between 1017 and 1020 at/cm3 so that the doped thin layer has an emissivity of between 0.75 and 0.9.
The method according to claim 1, wherein step a) comprises: i) providing a substrate of resistive InP; ii) implanting dopant ion species such as S, Sn, Zn, Si, Te, Ge or Se in the substrate so as to form a doped buried layer delimiting a surface layer between the implanted surface and the buried layer; 2 Serial No. 13/974,347 GER₂₃ 0 6US (BR079528/EMA/SDO) iii) applying heat treatment to the buried layer so as electrically to activate the dopant ion species and to form a doped thin layer in InP material having an emissivity of between 0.75 and 0.9, in order to obtain the structure.
The method according to claim 1, wherein step a) comprises: j)-providing a substrate comprising a seed layer on its surface; k)-epitaxying a doped thin InP layer on the seed layer; and 1)-epitaxying an InP surface layer on the doped thin layer, the doped thin layer having an emissivity of between 0.75 and 0.9, so as to obtain the structure. withdrawn
The method according to claim 1, wherein the InP surface layer is formed of resistive InP chosen from among intrinsic InP or InP whose doping is compensated by a concentration of electrically activated Fe dopants in the order of 10 "5 to 1016 Fe/cm 3.
The method according to claim 1, wherein step b) comprises a step to implant hydrogen ions at an energy and current density such that the implantation temperature in the doped thin layer is between 120 and 180 ±°C. 3
The method according to claim, 5 wherein the seed layer comprises resistive InP. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
InP film transfer structure
Materials described outside the worked examples.
InP surface layer
InP
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Emissivity | 0.75–0.9 | InP |
Emissivity | 0.4–0.46 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,123,641Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 to 7 i llustrate one embodiment of the method of the 15 i nvention
Figures 8 to 13 i llustrate a second embodiment of the method of the invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring an InP film onto a stiffener substrate, the method comprising: a) Providing a structure comprising a surface layer of InP and an underlying doped thin InP layer; b) Implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer, c) Placing the surface layer in close contact with a stiffener substrate; and d) Applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
The method according to claim 1, wherein the surface layer is doped with the same dopant as the dopant of the doped thin layer.
The method according to claim 1, wherein the doped thin layer comprises a concentration of electrically active dopants of between 1017 and 1020 at/cm3 so that the doped thin layer has an emissivity of between 0.75 and 0.9.
The method according to claim 1, wherein step a) comprises: i) providing a substrate of resistive InP; ii) implanting dopant ion species such as S, Sn, Zn, Si, Te, Ge or Se in the substrate so as to form a doped buried layer delimiting a surface layer between the implanted surface and the buried layer; 2 Serial No. 13/974,347 GER₂₃ 0 6US (BR079528/EMA/SDO) iii) applying heat treatment to the buried layer so as electrically to activate the dopant ion species and to form a doped thin layer in InP material having an emissivity of between 0.75 and 0.9, in order to obtain the structure.
The method according to claim 1, wherein step a) comprises: j)-providing a substrate comprising a seed layer on its surface; k)-epitaxying a doped thin InP layer on the seed layer; and 1)-epitaxying an InP surface layer on the doped thin layer, the doped thin layer having an emissivity of between 0.75 and 0.9, so as to obtain the structure. withdrawn
The method according to claim 1, wherein the InP surface layer is formed of resistive InP chosen from among intrinsic InP or InP whose doping is compensated by a concentration of electrically activated Fe dopants in the order of 10 "5 to 1016 Fe/cm 3.
The method according to claim 1, wherein step b) comprises a step to implant hydrogen ions at an energy and current density such that the implantation temperature in the doped thin layer is between 120 and 180 ±°C. 3
The method according to claim, 5 wherein the seed layer comprises resistive InP. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
InP film transfer structure
Materials described outside the worked examples.
InP surface layer
InP
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Emissivity | 0.75–0.9 | InP |
Emissivity | 0.4–0.46 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,123,641Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 to 7 i llustrate one embodiment of the method of the 15 i nvention
Figures 8 to 13 i llustrate a second embodiment of the method of the invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring an InP film onto a stiffener substrate, the method comprising: a) Providing a structure comprising a surface layer of InP and an underlying doped thin InP layer; b) Implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer, c) Placing the surface layer in close contact with a stiffener substrate; and d) Applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
The method according to claim 1, wherein the surface layer is doped with the same dopant as the dopant of the doped thin layer.
The method according to claim 1, wherein the doped thin layer comprises a concentration of electrically active dopants of between 1017 and 1020 at/cm3 so that the doped thin layer has an emissivity of between 0.75 and 0.9.
The method according to claim 1, wherein step a) comprises: i) providing a substrate of resistive InP; ii) implanting dopant ion species such as S, Sn, Zn, Si, Te, Ge or Se in the substrate so as to form a doped buried layer delimiting a surface layer between the implanted surface and the buried layer; 2 Serial No. 13/974,347 GER₂₃ 0 6US (BR079528/EMA/SDO) iii) applying heat treatment to the buried layer so as electrically to activate the dopant ion species and to form a doped thin layer in InP material having an emissivity of between 0.75 and 0.9, in order to obtain the structure.
The method according to claim 1, wherein step a) comprises: j)-providing a substrate comprising a seed layer on its surface; k)-epitaxying a doped thin InP layer on the seed layer; and 1)-epitaxying an InP surface layer on the doped thin layer, the doped thin layer having an emissivity of between 0.75 and 0.9, so as to obtain the structure. withdrawn
The method according to claim 1, wherein the InP surface layer is formed of resistive InP chosen from among intrinsic InP or InP whose doping is compensated by a concentration of electrically activated Fe dopants in the order of 10 "5 to 1016 Fe/cm 3.
The method according to claim 1, wherein step b) comprises a step to implant hydrogen ions at an energy and current density such that the implantation temperature in the doped thin layer is between 120 and 180 ±°C. 3
The method according to claim, 5 wherein the seed layer comprises resistive InP. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
InP film transfer structure
Materials described outside the worked examples.
InP surface layer
InP
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Emissivity | 0.75–0.9 | InP |
Emissivity | 0.4–0.46 |
Related documents with shared materials, methods, properties, or citations.
Fe-doped resistive InP
InP:Fe
SiO₂ bonding layer
SiO₂
stiffener substrate
Implantation Temperature | 120–180 | InP |
Resistivity | 20000000–100000000 | InP:Fe |
Thickness | 0–300 nm | — |
Fe-doped resistive InP
InP:Fe
SiO₂ bonding layer
SiO₂
stiffener substrate
Implantation Temperature | 120–180 | InP |
Resistivity | 20000000–100000000 | InP:Fe |
Thickness | 0–300 nm | — |
Fe-doped resistive InP
InP:Fe
SiO₂ bonding layer
SiO₂
stiffener substrate
Implantation Temperature | 120–180 | InP |
Resistivity | 20000000–100000000 | InP:Fe |
Thickness | 0–300 nm | — |
Fe-doped resistive InP
InP:Fe
SiO₂ bonding layer
SiO₂
stiffener substrate
Implantation Temperature | 120–180 | InP |
Resistivity | 20000000–100000000 | InP:Fe |
Thickness | 0–300 nm | — |