Patent
US 9,328,413Method for preparing a graphene nanoribbon on an insulating substrate
Shujie Tang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,328,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a graphene nanoribbon on an insulating substrate, comprising: 1) preparing a single atomic layer step on an insulating substrate, bc'ecei Ua....................""""" a n d 2) directly growing a graphene nanoribbon on the insulating substrate having single atomic layer steps, which is obtained in Step 1).
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the single atomic layer steps are steps, where the height of a single step is the thickness of one atomic layer; or grooves, the depth of which is the thickness of one atomic layer.
(Previously amended) The method for preparing a graphene nanoribbon on an insulating substrate as in claims 1, wherein in Step 2), the graphene nanoribbon is grown in a step-flow mode on the insulating substrate having single atomic layer steps by using methods of low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (P EC VD) or pulsed laser deposition (PLD).
A graphene nanoribbon, obtained by a method insulating substrate as in claims 1. withdrawn
canceled
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 51, wherein the insulating substrate is selected from hexagonal boron nitride (hBN), gallium nitride, strontium titanate, aluminum oxide and quartz.
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 6, wherein the preparation of the single atomic layer step on the hBN substrate comprises: cleaving a surface of the hBN substrate to obtain a fresh atomic GUH-172US Page 3 surface; and placing the hBN substrate in a mixture of hydrogen gas and argon gas for an annealing treatment, to obtain an hBN substrate having single atomic layer steps.
Materials described outside the worked examples.
graphene nanoribbon
hexagonal boron nitride
hBN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–500 nm | — |
Temperature | 1000–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,328,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a graphene nanoribbon on an insulating substrate, comprising: 1) preparing a single atomic layer step on an insulating substrate, bc'ecei Ua....................""""" a n d 2) directly growing a graphene nanoribbon on the insulating substrate having single atomic layer steps, which is obtained in Step 1).
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the single atomic layer steps are steps, where the height of a single step is the thickness of one atomic layer; or grooves, the depth of which is the thickness of one atomic layer.
(Previously amended) The method for preparing a graphene nanoribbon on an insulating substrate as in claims 1, wherein in Step 2), the graphene nanoribbon is grown in a step-flow mode on the insulating substrate having single atomic layer steps by using methods of low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (P EC VD) or pulsed laser deposition (PLD).
A graphene nanoribbon, obtained by a method insulating substrate as in claims 1. withdrawn
canceled
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 51, wherein the insulating substrate is selected from hexagonal boron nitride (hBN), gallium nitride, strontium titanate, aluminum oxide and quartz.
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 6, wherein the preparation of the single atomic layer step on the hBN substrate comprises: cleaving a surface of the hBN substrate to obtain a fresh atomic GUH-172US Page 3 surface; and placing the hBN substrate in a mixture of hydrogen gas and argon gas for an annealing treatment, to obtain an hBN substrate having single atomic layer steps.
Materials described outside the worked examples.
graphene nanoribbon
hexagonal boron nitride
hBN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–500 nm | — |
Temperature | 1000–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,328,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a graphene nanoribbon on an insulating substrate, comprising: 1) preparing a single atomic layer step on an insulating substrate, bc'ecei Ua....................""""" a n d 2) directly growing a graphene nanoribbon on the insulating substrate having single atomic layer steps, which is obtained in Step 1).
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the single atomic layer steps are steps, where the height of a single step is the thickness of one atomic layer; or grooves, the depth of which is the thickness of one atomic layer.
(Previously amended) The method for preparing a graphene nanoribbon on an insulating substrate as in claims 1, wherein in Step 2), the graphene nanoribbon is grown in a step-flow mode on the insulating substrate having single atomic layer steps by using methods of low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (P EC VD) or pulsed laser deposition (PLD).
A graphene nanoribbon, obtained by a method insulating substrate as in claims 1. withdrawn
canceled
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 51, wherein the insulating substrate is selected from hexagonal boron nitride (hBN), gallium nitride, strontium titanate, aluminum oxide and quartz.
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 6, wherein the preparation of the single atomic layer step on the hBN substrate comprises: cleaving a surface of the hBN substrate to obtain a fresh atomic GUH-172US Page 3 surface; and placing the hBN substrate in a mixture of hydrogen gas and argon gas for an annealing treatment, to obtain an hBN substrate having single atomic layer steps.
Materials described outside the worked examples.
graphene nanoribbon
hexagonal boron nitride
hBN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–500 nm | — |
Temperature | 1000–1200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,328,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a graphene nanoribbon on an insulating substrate, comprising: 1) preparing a single atomic layer step on an insulating substrate, bc'ecei Ua....................""""" a n d 2) directly growing a graphene nanoribbon on the insulating substrate having single atomic layer steps, which is obtained in Step 1).
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the single atomic layer steps are steps, where the height of a single step is the thickness of one atomic layer; or grooves, the depth of which is the thickness of one atomic layer.
(Previously amended) The method for preparing a graphene nanoribbon on an insulating substrate as in claims 1, wherein in Step 2), the graphene nanoribbon is grown in a step-flow mode on the insulating substrate having single atomic layer steps by using methods of low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (P EC VD) or pulsed laser deposition (PLD).
A graphene nanoribbon, obtained by a method insulating substrate as in claims 1. withdrawn
canceled
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 51, wherein the insulating substrate is selected from hexagonal boron nitride (hBN), gallium nitride, strontium titanate, aluminum oxide and quartz.
The method for preparing a graphene nanoribbon on an insulating substrate as in claim 6, wherein the preparation of the single atomic layer step on the hBN substrate comprises: cleaving a surface of the hBN substrate to obtain a fresh atomic GUH-172US Page 3 surface; and placing the hBN substrate in a mixture of hydrogen gas and argon gas for an annealing treatment, to obtain an hBN substrate having single atomic layer steps.
Materials described outside the worked examples.
graphene nanoribbon
hexagonal boron nitride
hBN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an atomic force microscope image of mechanically stripped hBN in 22 Embodiment 1. 23
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–500 nm | — |
Temperature | 1000–1200 °C |
Related documents with shared materials, methods, properties, or citations.
gallium nitride
GaN
strontium titanate
SrTiO₃
aluminum oxide
Al₂O₃
quartz
SiO₂
methane
CH₄
ethylene
C₂H₄
ethyne
C₂H₂
benzene
C₆H₆
polymethylmethacrylate
PMMA
glucose
C₆H₁₂O₆
graphite
C
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
| — |
Temperature | 500–1300 °C | — |
Temperature | 900–1200 °C | — |
Pressure | 1–5 Pa | — |
Temperature | 600–850 °C | — |
Thickness | 50–70 cm | — |
Temperature | 850–950 °C | — |
Pressure | 100–500 Pa | — |
Pressure | 0.0001 Pa | — |
gallium nitride
GaN
strontium titanate
SrTiO₃
aluminum oxide
Al₂O₃
quartz
SiO₂
methane
CH₄
ethylene
C₂H₄
ethyne
C₂H₂
benzene
C₆H₆
polymethylmethacrylate
PMMA
glucose
C₆H₁₂O₆
graphite
C
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
| — |
Temperature | 500–1300 °C | — |
Temperature | 900–1200 °C | — |
Pressure | 1–5 Pa | — |
Temperature | 600–850 °C | — |
Thickness | 50–70 cm | — |
Temperature | 850–950 °C | — |
Pressure | 100–500 Pa | — |
Pressure | 0.0001 Pa | — |
gallium nitride
GaN
strontium titanate
SrTiO₃
aluminum oxide
Al₂O₃
quartz
SiO₂
methane
CH₄
ethylene
C₂H₄
ethyne
C₂H₂
benzene
C₆H₆
polymethylmethacrylate
PMMA
glucose
C₆H₁₂O₆
graphite
C
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
| — |
Temperature | 500–1300 °C | — |
Temperature | 900–1200 °C | — |
Pressure | 1–5 Pa | — |
Temperature | 600–850 °C | — |
Thickness | 50–70 cm | — |
Temperature | 850–950 °C | — |
Pressure | 100–500 Pa | — |
Pressure | 0.0001 Pa | — |
gallium nitride
GaN
strontium titanate
SrTiO₃
aluminum oxide
Al₂O₃
quartz
SiO₂
methane
CH₄
ethylene
C₂H₄
ethyne
C₂H₂
benzene
C₆H₆
polymethylmethacrylate
PMMA
glucose
C₆H₁₂O₆
graphite
C
FIG. 2 is an atomic force microscope image of single atomic layer steps of etched hBN 24 in Embodiment 1. 25
FIG. 3 is an atomic force microscope image of a surface of etched hBN in Embodiment 26 2. 27
FIG. 4 is an atomic force microscope image of a surface of etched hBN in Embodiment 28 3. 8 GUH- 1 72US 1
FIG. 5 is an atomic force microscope image of hBN having single atomic layer steps 2 after being etched in Embodiment 4. 3
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 6 is an atomic force microscope image of a graphene nanoribbon along a lower 4 edge of a step on hBN in Embodiment 4. 5
FIG. 7 is a Raman spectrum of a graphene nanoribbon in Embodiment 4. 6
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 8 is an atomic force microscope image of a graphene nanoribbon along a lower 7 edge of a step on hBN in Embodiment 5. 8
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 9 show that the 3 width of the nanoribbon is 40 nm, and the thickness of the graphene is one layer. 4 Embodiment 6: Preparation of a graphene nanoribbon …
FIG. 10 is an atomic force microscope topological phase image of a graphene 10 nanoribbon in Embodiment 6. 11
FIG. 11 is an atomic force microscope friction phase image of a graphene nanoribbon in 12 Embodiment 6. 13 Detailed Description of the Preferred Embodiments 14 …
| — |
Temperature | 500–1300 °C | — |
Temperature | 900–1200 °C | — |
Pressure | 1–5 Pa | — |
Temperature | 600–850 °C | — |
Thickness | 50–70 cm | — |
Temperature | 850–950 °C | — |
Pressure | 100–500 Pa | — |
Pressure | 0.0001 Pa | — |