Patent
US 10,361,272InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Supply Layer
Shih-Ming Joseph LIU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,361,272Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprising: a compound semiconductor substrate; a buffer layer formed on said compound semiconductor substrate; a channel layer formed on said buffer layer; a carrier supply layer formed on said channel layer, wherein said carrier supply layer is made of AlGaAs; a Schottky barrier layer formed on said carrier supply layer, wherein said Schottky barrier layer is made of InGaA lP; a cap layer formed on said Schottky barrier layer, wherein said cap layer has a gate recess, a bottom of said gate recess is defined by said Scho tt ky barrier layer; a source electrode and a drain electrode are formed respectively on said cap layer at two sides with respect to said gate recess, wherein said source electrode and said drain electrode form respectively an ohmic contact with said cap layer; and a gate electrode formed on said Schottky barrier layer within said gate recess, wherein said gate electrode and said Schottky barrier layer form a Schottky contact.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, wherein said Schottky barrier layer and said carrier supply layer have a Schottky-barrier-layer bandgap and a carrier-supply-layer bandgap respectively, wherein said Schottky-barrier-layer bandgap is greater than said carrier-supply-layer bandgap.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, further comprising a first spacer layer and a second spacer layer, wherein said first spacer layer is formed on said buffer layer, said channel layer is formed on said first spacer layer, said second spacer layer is formed on said channel laye r, said carrier supply layer is formed on said second spacer layer.
The InGaA l P Schottky field effect transistor with A I GaAs carrier supply layer according to claim 1, further comprising a lower barrier layer, wherein said lower barrier layer is form on said buffer layer, said channel layer is formed on said lower barrier layer.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, further comprising an upper-barrier spacer layer, wherein said upper-barrier spacer layer is formed on said channel layer, said carrier supply layer is formed on said upper-barrier spacer layer.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said channel layer is made of In x Ga 1x As, wherein the 16 ratio of the composition of indium to gallium is x: 1 -x.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said compound semiconductor substrate is made of GaAs.
The I nGaA I P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said buffer layer is made of at least one material selected from the group consisting o f: GaAs and A I GaAs.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said cap layer is made of GaAs.
Layer stacks claimed or described, ordered top of device to substrate.
InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer
Materials described outside the worked examples.
InGaAlP
AlGaAs
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 800 mm | — |
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE HAVING STACKED INGAP AND GAAS LAYERS, AND METHOD OF MAKING SAME
INDIUM GALLIUM ARSENIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING A LOW CONTACT RESISTANCE TO METAL ELECTRODE
Patent
Atlas literature
Patent
US 10,361,272Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprising: a compound semiconductor substrate; a buffer layer formed on said compound semiconductor substrate; a channel layer formed on said buffer layer; a carrier supply layer formed on said channel layer, wherein said carrier supply layer is made of AlGaAs; a Schottky barrier layer formed on said carrier supply layer, wherein said Schottky barrier layer is made of InGaA lP; a cap layer formed on said Schottky barrier layer, wherein said cap layer has a gate recess, a bottom of said gate recess is defined by said Scho tt ky barrier layer; a source electrode and a drain electrode are formed respectively on said cap layer at two sides with respect to said gate recess, wherein said source electrode and said drain electrode form respectively an ohmic contact with said cap layer; and a gate electrode formed on said Schottky barrier layer within said gate recess, wherein said gate electrode and said Schottky barrier layer form a Schottky contact.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, wherein said Schottky barrier layer and said carrier supply layer have a Schottky-barrier-layer bandgap and a carrier-supply-layer bandgap respectively, wherein said Schottky-barrier-layer bandgap is greater than said carrier-supply-layer bandgap.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, further comprising a first spacer layer and a second spacer layer, wherein said first spacer layer is formed on said buffer layer, said channel layer is formed on said first spacer layer, said second spacer layer is formed on said channel laye r, said carrier supply layer is formed on said second spacer layer.
The InGaA l P Schottky field effect transistor with A I GaAs carrier supply layer according to claim 1, further comprising a lower barrier layer, wherein said lower barrier layer is form on said buffer layer, said channel layer is formed on said lower barrier layer.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, further comprising an upper-barrier spacer layer, wherein said upper-barrier spacer layer is formed on said channel layer, said carrier supply layer is formed on said upper-barrier spacer layer.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said channel layer is made of In x Ga 1x As, wherein the 16 ratio of the composition of indium to gallium is x: 1 -x.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said compound semiconductor substrate is made of GaAs.
The I nGaA I P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said buffer layer is made of at least one material selected from the group consisting o f: GaAs and A I GaAs.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said cap layer is made of GaAs.
Layer stacks claimed or described, ordered top of device to substrate.
InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer
Materials described outside the worked examples.
InGaAlP
AlGaAs
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 800 mm | — |
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE HAVING STACKED INGAP AND GAAS LAYERS, AND METHOD OF MAKING SAME
INDIUM GALLIUM ARSENIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING A LOW CONTACT RESISTANCE TO METAL ELECTRODE
Patent
Atlas literature
Patent
US 10,361,272Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprising: a compound semiconductor substrate; a buffer layer formed on said compound semiconductor substrate; a channel layer formed on said buffer layer; a carrier supply layer formed on said channel layer, wherein said carrier supply layer is made of AlGaAs; a Schottky barrier layer formed on said carrier supply layer, wherein said Schottky barrier layer is made of InGaA lP; a cap layer formed on said Schottky barrier layer, wherein said cap layer has a gate recess, a bottom of said gate recess is defined by said Scho tt ky barrier layer; a source electrode and a drain electrode are formed respectively on said cap layer at two sides with respect to said gate recess, wherein said source electrode and said drain electrode form respectively an ohmic contact with said cap layer; and a gate electrode formed on said Schottky barrier layer within said gate recess, wherein said gate electrode and said Schottky barrier layer form a Schottky contact.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, wherein said Schottky barrier layer and said carrier supply layer have a Schottky-barrier-layer bandgap and a carrier-supply-layer bandgap respectively, wherein said Schottky-barrier-layer bandgap is greater than said carrier-supply-layer bandgap.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, further comprising a first spacer layer and a second spacer layer, wherein said first spacer layer is formed on said buffer layer, said channel layer is formed on said first spacer layer, said second spacer layer is formed on said channel laye r, said carrier supply layer is formed on said second spacer layer.
The InGaA l P Schottky field effect transistor with A I GaAs carrier supply layer according to claim 1, further comprising a lower barrier layer, wherein said lower barrier layer is form on said buffer layer, said channel layer is formed on said lower barrier layer.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, further comprising an upper-barrier spacer layer, wherein said upper-barrier spacer layer is formed on said channel layer, said carrier supply layer is formed on said upper-barrier spacer layer.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said channel layer is made of In x Ga 1x As, wherein the 16 ratio of the composition of indium to gallium is x: 1 -x.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said compound semiconductor substrate is made of GaAs.
The I nGaA I P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said buffer layer is made of at least one material selected from the group consisting o f: GaAs and A I GaAs.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said cap layer is made of GaAs.
Layer stacks claimed or described, ordered top of device to substrate.
InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer
Materials described outside the worked examples.
InGaAlP
AlGaAs
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 800 mm | — |
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE HAVING STACKED INGAP AND GAAS LAYERS, AND METHOD OF MAKING SAME
INDIUM GALLIUM ARSENIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING A LOW CONTACT RESISTANCE TO METAL ELECTRODE
Patent
Atlas literature
Patent
US 10,361,272Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprising: a compound semiconductor substrate; a buffer layer formed on said compound semiconductor substrate; a channel layer formed on said buffer layer; a carrier supply layer formed on said channel layer, wherein said carrier supply layer is made of AlGaAs; a Schottky barrier layer formed on said carrier supply layer, wherein said Schottky barrier layer is made of InGaA lP; a cap layer formed on said Schottky barrier layer, wherein said cap layer has a gate recess, a bottom of said gate recess is defined by said Scho tt ky barrier layer; a source electrode and a drain electrode are formed respectively on said cap layer at two sides with respect to said gate recess, wherein said source electrode and said drain electrode form respectively an ohmic contact with said cap layer; and a gate electrode formed on said Schottky barrier layer within said gate recess, wherein said gate electrode and said Schottky barrier layer form a Schottky contact.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, wherein said Schottky barrier layer and said carrier supply layer have a Schottky-barrier-layer bandgap and a carrier-supply-layer bandgap respectively, wherein said Schottky-barrier-layer bandgap is greater than said carrier-supply-layer bandgap.
The InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer according to claim 1, further comprising a first spacer layer and a second spacer layer, wherein said first spacer layer is formed on said buffer layer, said channel layer is formed on said first spacer layer, said second spacer layer is formed on said channel laye r, said carrier supply layer is formed on said second spacer layer.
The InGaA l P Schottky field effect transistor with A I GaAs carrier supply layer according to claim 1, further comprising a lower barrier layer, wherein said lower barrier layer is form on said buffer layer, said channel layer is formed on said lower barrier layer.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, further comprising an upper-barrier spacer layer, wherein said upper-barrier spacer layer is formed on said channel layer, said carrier supply layer is formed on said upper-barrier spacer layer.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said channel layer is made of In x Ga 1x As, wherein the 16 ratio of the composition of indium to gallium is x: 1 -x.
The InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said compound semiconductor substrate is made of GaAs.
The I nGaA I P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said buffer layer is made of at least one material selected from the group consisting o f: GaAs and A I GaAs.
The I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer according to claim 1, wherein said cap layer is made of GaAs.
Layer stacks claimed or described, ordered top of device to substrate.
InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer
Materials described outside the worked examples.
InGaAlP
AlGaAs
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a sectional schematic view of an embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 800 mm | — |
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE HAVING STACKED INGAP AND GAAS LAYERS, AND METHOD OF MAKING SAME
INDIUM GALLIUM ARSENIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING A LOW CONTACT RESISTANCE TO METAL ELECTRODE
first spacer layer material
second spacer layer material
GaAs
upper-barrier spacer layer material
lower barrier layer material
InxGa₁-xAs
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
first spacer layer material
second spacer layer material
GaAs
upper-barrier spacer layer material
lower barrier layer material
InxGa₁-xAs
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
first spacer layer material
second spacer layer material
GaAs
upper-barrier spacer layer material
lower barrier layer material
InxGa₁-xAs
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
first spacer layer material
second spacer layer material
GaAs
upper-barrier spacer layer material
lower barrier layer material
InxGa₁-xAs
Figure 2 is a sectional schematic view of another embodiment of an I nGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 3 is a sectional schematic view of another embodiment of an InGaA l P Scho tt ky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 4 is a sectional schematic view of another embodiment of an InGaA l P Scho t tky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 5 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 6 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 7 is a sectional schematic view of another embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 8 is a sectional schematic view of another embodiment of an InGaA I P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 9 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor with A l GaAs carrier supply layer of the present invention.
Figure 10 is a sectional schematic view of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.
Figure 11 is a diagram showing the characteristics of gate-source voltage to transconductance and the characteristics of gate-source voltage to drain-source current of an embodiment of an InGaA l P Schottky field effect transistor of conventional technology.