Patent
US 9,472,450GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES
Griselda Bonilla
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,472,450Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross-sectional view) illustrating a structure including a substrate, a first dielectric material, and a second …
FIG. 2 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 3 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG.5 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 6 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 7 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 8 is a pictorial representation (through a cross-sectional view) illustrating a structure including, from bottom to top, a substrate, a first dielectric …
FIG. 9 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross-sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. canceled
An int e rconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an upper m ost surface and a bottommost surface; and at least one diffusion barri c r material having an uppe rm ost surface in contact with said bottom m ost surface of said at least one copper structure, said at least one diffusion barrier material having edges that are vertically coincident with said vertical sidewall surfaces of said at least one copper structure, a graphene cap located atop said uppermost surface of said at least one copper stnictu re and o u said s idewall surfaces of said at least one copper structure;-and a-metal-containing-=eap--between the graphene cap and-the- a t-Ieat- one copper structure, wherein- the metal-containing cap is direct contact with the at least-one copper structure.
The interconnect structure of claim 9, wherein said at least one diffusion barrier material comprises a first diffusion barrier material and a second diffusion barrier material, wherein said first diffusion barrier material is selected from a metal nitride, and said second diffusion barrier material is selected from a metal. Page 2 Application No. 13/468,693 Attorney Docket No. 2557SI- 00 2204-US
The interconnect structure of claim 9 further beneath said at least one diffusion barrier material.
The interconnect structure of claim 9, wherein graphene, few-layer graphene, multi-layer graphene multi-layer graphene, or any combination of graphe disordered carbon phases. 14-27. (Ca ncf elled) comprising another dielectric material located comprising a substrate comprising at least one dielectric material. said graphene cap comprises single-layer a mixture of single-layer, few-layer, and ne layers mixed with amorphous and/or *** END CLAIM LISTING *** Page 3
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with graphene cap
Materials described outside the worked examples.
copper
Cu
graphene cap
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,472,450Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross-sectional view) illustrating a structure including a substrate, a first dielectric material, and a second …
FIG. 2 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 3 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG.5 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 6 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 7 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 8 is a pictorial representation (through a cross-sectional view) illustrating a structure including, from bottom to top, a substrate, a first dielectric …
FIG. 9 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross-sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. canceled
An int e rconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an upper m ost surface and a bottommost surface; and at least one diffusion barri c r material having an uppe rm ost surface in contact with said bottom m ost surface of said at least one copper structure, said at least one diffusion barrier material having edges that are vertically coincident with said vertical sidewall surfaces of said at least one copper structure, a graphene cap located atop said uppermost surface of said at least one copper stnictu re and o u said s idewall surfaces of said at least one copper structure;-and a-metal-containing-=eap--between the graphene cap and-the- a t-Ieat- one copper structure, wherein- the metal-containing cap is direct contact with the at least-one copper structure.
The interconnect structure of claim 9, wherein said at least one diffusion barrier material comprises a first diffusion barrier material and a second diffusion barrier material, wherein said first diffusion barrier material is selected from a metal nitride, and said second diffusion barrier material is selected from a metal. Page 2 Application No. 13/468,693 Attorney Docket No. 2557SI- 00 2204-US
The interconnect structure of claim 9 further beneath said at least one diffusion barrier material.
The interconnect structure of claim 9, wherein graphene, few-layer graphene, multi-layer graphene multi-layer graphene, or any combination of graphe disordered carbon phases. 14-27. (Ca ncf elled) comprising another dielectric material located comprising a substrate comprising at least one dielectric material. said graphene cap comprises single-layer a mixture of single-layer, few-layer, and ne layers mixed with amorphous and/or *** END CLAIM LISTING *** Page 3
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with graphene cap
Materials described outside the worked examples.
copper
Cu
graphene cap
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,472,450Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross-sectional view) illustrating a structure including a substrate, a first dielectric material, and a second …
FIG. 2 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 3 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG.5 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 6 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 7 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 8 is a pictorial representation (through a cross-sectional view) illustrating a structure including, from bottom to top, a substrate, a first dielectric …
FIG. 9 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross-sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. canceled
An int e rconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an upper m ost surface and a bottommost surface; and at least one diffusion barri c r material having an uppe rm ost surface in contact with said bottom m ost surface of said at least one copper structure, said at least one diffusion barrier material having edges that are vertically coincident with said vertical sidewall surfaces of said at least one copper structure, a graphene cap located atop said uppermost surface of said at least one copper stnictu re and o u said s idewall surfaces of said at least one copper structure;-and a-metal-containing-=eap--between the graphene cap and-the- a t-Ieat- one copper structure, wherein- the metal-containing cap is direct contact with the at least-one copper structure.
The interconnect structure of claim 9, wherein said at least one diffusion barrier material comprises a first diffusion barrier material and a second diffusion barrier material, wherein said first diffusion barrier material is selected from a metal nitride, and said second diffusion barrier material is selected from a metal. Page 2 Application No. 13/468,693 Attorney Docket No. 2557SI- 00 2204-US
The interconnect structure of claim 9 further beneath said at least one diffusion barrier material.
The interconnect structure of claim 9, wherein graphene, few-layer graphene, multi-layer graphene multi-layer graphene, or any combination of graphe disordered carbon phases. 14-27. (Ca ncf elled) comprising another dielectric material located comprising a substrate comprising at least one dielectric material. said graphene cap comprises single-layer a mixture of single-layer, few-layer, and ne layers mixed with amorphous and/or *** END CLAIM LISTING *** Page 3
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with graphene cap
Materials described outside the worked examples.
copper
Cu
graphene cap
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,472,450Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross-sectional view) illustrating a structure including a substrate, a first dielectric material, and a second …
FIG. 2 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 3 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 4 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG.5 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 6 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 7 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 8 is a pictorial representation (through a cross-sectional view) illustrating a structure including, from bottom to top, a substrate, a first dielectric …
FIG. 9 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 10 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 11 is a pictorial representation (through a cross-sectional view) illustrating the structure of
FIG. 12 is a pictorial representation (through a cross-sectional view) illustrating the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. canceled
An int e rconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an upper m ost surface and a bottommost surface; and at least one diffusion barri c r material having an uppe rm ost surface in contact with said bottom m ost surface of said at least one copper structure, said at least one diffusion barrier material having edges that are vertically coincident with said vertical sidewall surfaces of said at least one copper structure, a graphene cap located atop said uppermost surface of said at least one copper stnictu re and o u said s idewall surfaces of said at least one copper structure;-and a-metal-containing-=eap--between the graphene cap and-the- a t-Ieat- one copper structure, wherein- the metal-containing cap is direct contact with the at least-one copper structure.
The interconnect structure of claim 9, wherein said at least one diffusion barrier material comprises a first diffusion barrier material and a second diffusion barrier material, wherein said first diffusion barrier material is selected from a metal nitride, and said second diffusion barrier material is selected from a metal. Page 2 Application No. 13/468,693 Attorney Docket No. 2557SI- 00 2204-US
The interconnect structure of claim 9 further beneath said at least one diffusion barrier material.
The interconnect structure of claim 9, wherein graphene, few-layer graphene, multi-layer graphene multi-layer graphene, or any combination of graphe disordered carbon phases. 14-27. (Ca ncf elled) comprising another dielectric material located comprising a substrate comprising at least one dielectric material. said graphene cap comprises single-layer a mixture of single-layer, few-layer, and ne layers mixed with amorphous and/or *** END CLAIM LISTING *** Page 3
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with graphene cap
Materials described outside the worked examples.
copper
Cu
graphene cap
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
dielectric material
metal-containing cap
metal nitride diffusion barrier
metal diffusion barrier
another dielectric material
semiconductor material substrate
silicon
Si
silicon oxide
| — |
Thickness | 4–40 nm | — |
Thickness | 2–80 nm | — |
Temperature | 200–400 °C | — |
Temperature | 350–400 °C | — |
Temperature | ≥ 400 °C | — |
dielectric material
metal-containing cap
metal nitride diffusion barrier
metal diffusion barrier
another dielectric material
semiconductor material substrate
silicon
Si
silicon oxide
| — |
Thickness | 4–40 nm | — |
Thickness | 2–80 nm | — |
Temperature | 200–400 °C | — |
Temperature | 350–400 °C | — |
Temperature | ≥ 400 °C | — |
dielectric material
metal-containing cap
metal nitride diffusion barrier
metal diffusion barrier
another dielectric material
semiconductor material substrate
silicon
Si
silicon oxide
| — |
Thickness | 4–40 nm | — |
Thickness | 2–80 nm | — |
Temperature | 200–400 °C | — |
Temperature | 350–400 °C | — |
Temperature | ≥ 400 °C | — |
dielectric material
metal-containing cap
metal nitride diffusion barrier
metal diffusion barrier
another dielectric material
semiconductor material substrate
silicon
Si
silicon oxide
| — |
Thickness | 4–40 nm | — |
Thickness | 2–80 nm | — |
Temperature | 200–400 °C | — |
Temperature | 350–400 °C | — |
Temperature | ≥ 400 °C | — |