Patent
US 12,467,160 B2GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT
Naoya Sunachi, Ryuichi Toba, Akira Akaishi
DOWA Electronics Materials Co., Ltd., Tokyo (JP)·Nov. 11, 2025·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 12,467,160 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a GaAs ingot of this disclosure;
FIG. 2 is a schematic cross-sectional view of a production apparatus used for the production of a GaAs ingot of this disclosure;
FIG. 3 is a schematic cross-sectional view of a crucible 3 used in the production of a GaAs ingot of this disclosure, corresponding to the state where the …
FIG. 4 is a diagram illustrating the relationship between the state inside a crucible and the temperature gradient from the start of crystal growth to the end …
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaAs wafer comprising: silicon with a silicon concentration of 5.0×1017 cm⁻³ or more and less than 3.5×1018 cm⁻³; indium with an indium concentration of 3.0×1017 cm⁻³ or more and less than 3.0×1019 cm⁻³; boron with a boron concentration of 1.0×1018 cm⁻³ or more; and zinc with a zinc concentration of 3×1016 cm⁻³ or less, wherein an average dislocation density of the n-type GaAs wafer is 1500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 6.0×1017 cm⁻³ or more.
The n-type GaAs wafer according to claim 1, wherein the indium concentration is 1.0×1018 cm⁻³ or more and 1.2×1019 cm⁻³ or less, and the average dislocation density is 500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is in a range of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorp-tion coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less.
A method of producing an n-type GaAs ingot, the method comprising performing a vertical gradient freeze method or a vertical Bridgman method using silicon as a dopant and using boron oxide as a sealant, wherein indium is used together with the silicon as the dopant, and zinc is not used as the dopant, an amount of silicon charged is 70 wt ppm or more and 130 wt ppm or less with respect to a GaAs feedstock, and an amount of indium charged is 100 wt ppm or more and 5000 wt ppm or less with respect to the GaAs feedstock, and B₂ an average dislocation density of the n-type GaAs ingot is 1500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 6.0×1017 cm⁻³ or more.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the average dislocation density is 500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less at a wavelength of 940 nm.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot has a part having a carrier concentration of 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less at a wavelength of 940 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
n-type GaAs wafer for LiDAR sensor substrate
Materials described outside the worked examples.
n-type GaAs (Si- and In-doped)
GaAs
silicon dopant
Si
indium dopant
In
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average etch pit density/average dislocation density | ≤ 1500 cm⁻² | GaAs |
average dislocation density (tighter embodiment) | ≤ 500 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,467,160 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a GaAs ingot of this disclosure;
FIG. 2 is a schematic cross-sectional view of a production apparatus used for the production of a GaAs ingot of this disclosure;
FIG. 3 is a schematic cross-sectional view of a crucible 3 used in the production of a GaAs ingot of this disclosure, corresponding to the state where the …
FIG. 4 is a diagram illustrating the relationship between the state inside a crucible and the temperature gradient from the start of crystal growth to the end …
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaAs wafer comprising: silicon with a silicon concentration of 5.0×1017 cm⁻³ or more and less than 3.5×1018 cm⁻³; indium with an indium concentration of 3.0×1017 cm⁻³ or more and less than 3.0×1019 cm⁻³; boron with a boron concentration of 1.0×1018 cm⁻³ or more; and zinc with a zinc concentration of 3×1016 cm⁻³ or less, wherein an average dislocation density of the n-type GaAs wafer is 1500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 6.0×1017 cm⁻³ or more.
The n-type GaAs wafer according to claim 1, wherein the indium concentration is 1.0×1018 cm⁻³ or more and 1.2×1019 cm⁻³ or less, and the average dislocation density is 500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is in a range of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorp-tion coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less.
A method of producing an n-type GaAs ingot, the method comprising performing a vertical gradient freeze method or a vertical Bridgman method using silicon as a dopant and using boron oxide as a sealant, wherein indium is used together with the silicon as the dopant, and zinc is not used as the dopant, an amount of silicon charged is 70 wt ppm or more and 130 wt ppm or less with respect to a GaAs feedstock, and an amount of indium charged is 100 wt ppm or more and 5000 wt ppm or less with respect to the GaAs feedstock, and B₂ an average dislocation density of the n-type GaAs ingot is 1500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 6.0×1017 cm⁻³ or more.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the average dislocation density is 500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less at a wavelength of 940 nm.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot has a part having a carrier concentration of 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less at a wavelength of 940 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
n-type GaAs wafer for LiDAR sensor substrate
Materials described outside the worked examples.
n-type GaAs (Si- and In-doped)
GaAs
silicon dopant
Si
indium dopant
In
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average etch pit density/average dislocation density | ≤ 1500 cm⁻² | GaAs |
average dislocation density (tighter embodiment) | ≤ 500 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,467,160 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a GaAs ingot of this disclosure;
FIG. 2 is a schematic cross-sectional view of a production apparatus used for the production of a GaAs ingot of this disclosure;
FIG. 3 is a schematic cross-sectional view of a crucible 3 used in the production of a GaAs ingot of this disclosure, corresponding to the state where the …
FIG. 4 is a diagram illustrating the relationship between the state inside a crucible and the temperature gradient from the start of crystal growth to the end …
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaAs wafer comprising: silicon with a silicon concentration of 5.0×1017 cm⁻³ or more and less than 3.5×1018 cm⁻³; indium with an indium concentration of 3.0×1017 cm⁻³ or more and less than 3.0×1019 cm⁻³; boron with a boron concentration of 1.0×1018 cm⁻³ or more; and zinc with a zinc concentration of 3×1016 cm⁻³ or less, wherein an average dislocation density of the n-type GaAs wafer is 1500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 6.0×1017 cm⁻³ or more.
The n-type GaAs wafer according to claim 1, wherein the indium concentration is 1.0×1018 cm⁻³ or more and 1.2×1019 cm⁻³ or less, and the average dislocation density is 500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is in a range of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorp-tion coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less.
A method of producing an n-type GaAs ingot, the method comprising performing a vertical gradient freeze method or a vertical Bridgman method using silicon as a dopant and using boron oxide as a sealant, wherein indium is used together with the silicon as the dopant, and zinc is not used as the dopant, an amount of silicon charged is 70 wt ppm or more and 130 wt ppm or less with respect to a GaAs feedstock, and an amount of indium charged is 100 wt ppm or more and 5000 wt ppm or less with respect to the GaAs feedstock, and B₂ an average dislocation density of the n-type GaAs ingot is 1500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 6.0×1017 cm⁻³ or more.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the average dislocation density is 500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less at a wavelength of 940 nm.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot has a part having a carrier concentration of 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less at a wavelength of 940 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
n-type GaAs wafer for LiDAR sensor substrate
Materials described outside the worked examples.
n-type GaAs (Si- and In-doped)
GaAs
silicon dopant
Si
indium dopant
In
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average etch pit density/average dislocation density | ≤ 1500 cm⁻² | GaAs |
average dislocation density (tighter embodiment) | ≤ 500 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,467,160 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a GaAs ingot of this disclosure;
FIG. 2 is a schematic cross-sectional view of a production apparatus used for the production of a GaAs ingot of this disclosure;
FIG. 3 is a schematic cross-sectional view of a crucible 3 used in the production of a GaAs ingot of this disclosure, corresponding to the state where the …
FIG. 4 is a diagram illustrating the relationship between the state inside a crucible and the temperature gradient from the start of crystal growth to the end …
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaAs wafer comprising: silicon with a silicon concentration of 5.0×1017 cm⁻³ or more and less than 3.5×1018 cm⁻³; indium with an indium concentration of 3.0×1017 cm⁻³ or more and less than 3.0×1019 cm⁻³; boron with a boron concentration of 1.0×1018 cm⁻³ or more; and zinc with a zinc concentration of 3×1016 cm⁻³ or less, wherein an average dislocation density of the n-type GaAs wafer is 1500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 6.0×1017 cm⁻³ or more.
The n-type GaAs wafer according to claim 1, wherein the indium concentration is 1.0×1018 cm⁻³ or more and 1.2×1019 cm⁻³ or less, and the average dislocation density is 500/cm2 or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is in a range of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorp-tion coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less.
The n-type GaAs wafer according to claim 1, wherein a carrier concentration is 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient at a wavelength of 940 nm is 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less.
A method of producing an n-type GaAs ingot, the method comprising performing a vertical gradient freeze method or a vertical Bridgman method using silicon as a dopant and using boron oxide as a sealant, wherein indium is used together with the silicon as the dopant, and zinc is not used as the dopant, an amount of silicon charged is 70 wt ppm or more and 130 wt ppm or less with respect to a GaAs feedstock, and an amount of indium charged is 100 wt ppm or more and 5000 wt ppm or less with respect to the GaAs feedstock, and B₂ an average dislocation density of the n-type GaAs ingot is 1500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 6.0×1017 cm⁻³ or more.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the average dislocation density is 500/cm2 or less.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot includes a part having a carrier concentration of 8.0×1017 cm⁻³ or more and 1.4×1018 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 7.2 cm⁻¹ or less at a wavelength of 940 nm.
The method of producing an n-type GaAs ingot, according to claim 6, wherein the n-type GaAs ingot has a part having a carrier concentration of 7.0×1017 cm⁻³ or more and 8.0×1017 cm⁻³ or less, and an absorption coefficient of 4.8 cm⁻¹ or more and 6.8 cm⁻¹ or less at a wavelength of 940 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
n-type GaAs wafer for LiDAR sensor substrate
Materials described outside the worked examples.
n-type GaAs (Si- and In-doped)
GaAs
silicon dopant
Si
indium dopant
In
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average etch pit density/average dislocation density | ≤ 1500 cm⁻² | GaAs |
average dislocation density (tighter embodiment) | ≤ 500 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
boron oxide sealant
B₂O₃
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
absorption coefficient at 940 nm (carrier conc 8.0e17–1.4e18 cm^-3) | 4.8–7.2 cm⁻¹ | GaAs |
absorption coefficient at 940 nm (carrier conc 7.0e17–8.0e17 cm^-3) | 4.8–6.8 cm⁻¹ | GaAs |
Thickness | 6–6.5 mm | — |
Temperature | 330–360 °C | — |
Duration | 30–40 min | — |
Thickness | 0.5–1 µm | — |
Cited non-patent literature · 2
boron oxide sealant
B₂O₃
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
absorption coefficient at 940 nm (carrier conc 8.0e17–1.4e18 cm^-3) | 4.8–7.2 cm⁻¹ | GaAs |
absorption coefficient at 940 nm (carrier conc 7.0e17–8.0e17 cm^-3) | 4.8–6.8 cm⁻¹ | GaAs |
Thickness | 6–6.5 mm | — |
Temperature | 330–360 °C | — |
Duration | 30–40 min | — |
Thickness | 0.5–1 µm | — |
Cited non-patent literature · 2
boron oxide sealant
B₂O₃
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
absorption coefficient at 940 nm (carrier conc 8.0e17–1.4e18 cm^-3) | 4.8–7.2 cm⁻¹ | GaAs |
absorption coefficient at 940 nm (carrier conc 7.0e17–8.0e17 cm^-3) | 4.8–6.8 cm⁻¹ | GaAs |
Thickness | 6–6.5 mm | — |
Temperature | 330–360 °C | — |
Duration | 30–40 min | — |
Thickness | 0.5–1 µm | — |
Cited non-patent literature · 2
boron oxide sealant
B₂O₃
FIG. 5 is a graph illustrating the relationship between the 55 carrier concentration of GaAs wafers obtained in Example and the transmissivity and the …
absorption coefficient at 940 nm (carrier conc 8.0e17–1.4e18 cm^-3) | 4.8–7.2 cm⁻¹ | GaAs |
absorption coefficient at 940 nm (carrier conc 7.0e17–8.0e17 cm^-3) | 4.8–6.8 cm⁻¹ | GaAs |
Thickness | 6–6.5 mm | — |
Temperature | 330–360 °C | — |
Duration | 30–40 min | — |
Thickness | 0.5–1 µm | — |
Cited non-patent literature · 2