Patent
US 10,156,023ULTRA LONG LIFETIME GALLIUM ARSENIDE
Peter G. Schunemann
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,156,023Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
FIG. 3 B) shows graphs taken by the inventors that show average carrier lifetimes of greater than 1000 p s the inventor's high quality HVPE GaAs wafers versus …
FIG.4) ill ustrates one embodiment of a system used to grow a GaAs crystal using a hydride vapor phase epitaxy (HVPE) process. [0022] Figure 5A (
FIG.5A) depicts a top view of a HVPE reactor design for thick- film growth of GaAs. [0023] Figure 5B (
FIG.6) is a side elevation view of a second embodiment low pressure HVPE system. [0025] Figure 7 (
FIG.7) is an exemplary flow chart of a method of forming bulk GaAs having long free carrier lifetimes in accordance with the present disclosure. 1 3-3088 CIP …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (GaCI) from the gallium chloride source to the substrate; deliverin g AsH₃ orthogonally relative to the GaCI directly at the substrate surface; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. Currently amended
The method of Claim 1, wherein mixing and effecting the reaction of the gallium chloride with the arsine directly at the substrate surface is accomplished by a close-coupled shower-head apparatus delivering the gallium chloride to mix with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: growing bulk GaAs to a thickness greater than 500 micrometers. Original
The method of Claim 1, wherein the substrate is an off-cut semiconductor substrate wafer, wherein an off-cut angle, relative to a primary crystallographic axis is greater than 1. Original
The method of Claim 1, further comprising: precluding growth of parasitic Gallium Arsenide (GaAs) deposits on chamber walls of the low pressure HVPE system through direct delivery of gallium chloride via a close-coupled shower-head apparatus to react with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: minimizing the incorporation of Silicon (Si) and Oxygen (0) impurities to effectuate the long carrier lifetimes. Original
The method of Claim 1, further comprising providing a recessed horizontal wafer holder. Original
The method of Claim 1, further comprising: rotating the substrate, wherein the substrate is rotated during GaAs growth. Original
. Canceled
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (Ga C I) from the gallium chloride source to the substrate; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. New
Materials described outside the worked examples.
bulk gallium arsenide
GaAs
gallium chloride
GaCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bulk GaAs carrier lifetime (claimed minimum) | ≥ 10 microseconds | GaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,156,023Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
FIG. 3 B) shows graphs taken by the inventors that show average carrier lifetimes of greater than 1000 p s the inventor's high quality HVPE GaAs wafers versus …
FIG.4) ill ustrates one embodiment of a system used to grow a GaAs crystal using a hydride vapor phase epitaxy (HVPE) process. [0022] Figure 5A (
FIG.5A) depicts a top view of a HVPE reactor design for thick- film growth of GaAs. [0023] Figure 5B (
FIG.6) is a side elevation view of a second embodiment low pressure HVPE system. [0025] Figure 7 (
FIG.7) is an exemplary flow chart of a method of forming bulk GaAs having long free carrier lifetimes in accordance with the present disclosure. 1 3-3088 CIP …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (GaCI) from the gallium chloride source to the substrate; deliverin g AsH₃ orthogonally relative to the GaCI directly at the substrate surface; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. Currently amended
The method of Claim 1, wherein mixing and effecting the reaction of the gallium chloride with the arsine directly at the substrate surface is accomplished by a close-coupled shower-head apparatus delivering the gallium chloride to mix with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: growing bulk GaAs to a thickness greater than 500 micrometers. Original
The method of Claim 1, wherein the substrate is an off-cut semiconductor substrate wafer, wherein an off-cut angle, relative to a primary crystallographic axis is greater than 1. Original
The method of Claim 1, further comprising: precluding growth of parasitic Gallium Arsenide (GaAs) deposits on chamber walls of the low pressure HVPE system through direct delivery of gallium chloride via a close-coupled shower-head apparatus to react with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: minimizing the incorporation of Silicon (Si) and Oxygen (0) impurities to effectuate the long carrier lifetimes. Original
The method of Claim 1, further comprising providing a recessed horizontal wafer holder. Original
The method of Claim 1, further comprising: rotating the substrate, wherein the substrate is rotated during GaAs growth. Original
. Canceled
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (Ga C I) from the gallium chloride source to the substrate; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. New
Materials described outside the worked examples.
bulk gallium arsenide
GaAs
gallium chloride
GaCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bulk GaAs carrier lifetime (claimed minimum) | ≥ 10 microseconds | GaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,156,023Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
FIG. 3 B) shows graphs taken by the inventors that show average carrier lifetimes of greater than 1000 p s the inventor's high quality HVPE GaAs wafers versus …
FIG.4) ill ustrates one embodiment of a system used to grow a GaAs crystal using a hydride vapor phase epitaxy (HVPE) process. [0022] Figure 5A (
FIG.5A) depicts a top view of a HVPE reactor design for thick- film growth of GaAs. [0023] Figure 5B (
FIG.6) is a side elevation view of a second embodiment low pressure HVPE system. [0025] Figure 7 (
FIG.7) is an exemplary flow chart of a method of forming bulk GaAs having long free carrier lifetimes in accordance with the present disclosure. 1 3-3088 CIP …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (GaCI) from the gallium chloride source to the substrate; deliverin g AsH₃ orthogonally relative to the GaCI directly at the substrate surface; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. Currently amended
The method of Claim 1, wherein mixing and effecting the reaction of the gallium chloride with the arsine directly at the substrate surface is accomplished by a close-coupled shower-head apparatus delivering the gallium chloride to mix with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: growing bulk GaAs to a thickness greater than 500 micrometers. Original
The method of Claim 1, wherein the substrate is an off-cut semiconductor substrate wafer, wherein an off-cut angle, relative to a primary crystallographic axis is greater than 1. Original
The method of Claim 1, further comprising: precluding growth of parasitic Gallium Arsenide (GaAs) deposits on chamber walls of the low pressure HVPE system through direct delivery of gallium chloride via a close-coupled shower-head apparatus to react with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: minimizing the incorporation of Silicon (Si) and Oxygen (0) impurities to effectuate the long carrier lifetimes. Original
The method of Claim 1, further comprising providing a recessed horizontal wafer holder. Original
The method of Claim 1, further comprising: rotating the substrate, wherein the substrate is rotated during GaAs growth. Original
. Canceled
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (Ga C I) from the gallium chloride source to the substrate; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. New
Materials described outside the worked examples.
bulk gallium arsenide
GaAs
gallium chloride
GaCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bulk GaAs carrier lifetime (claimed minimum) | ≥ 10 microseconds | GaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,156,023Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
FIG. 3 B) shows graphs taken by the inventors that show average carrier lifetimes of greater than 1000 p s the inventor's high quality HVPE GaAs wafers versus …
FIG.4) ill ustrates one embodiment of a system used to grow a GaAs crystal using a hydride vapor phase epitaxy (HVPE) process. [0022] Figure 5A (
FIG.5A) depicts a top view of a HVPE reactor design for thick- film growth of GaAs. [0023] Figure 5B (
FIG.6) is a side elevation view of a second embodiment low pressure HVPE system. [0025] Figure 7 (
FIG.7) is an exemplary flow chart of a method of forming bulk GaAs having long free carrier lifetimes in accordance with the present disclosure. 1 3-3088 CIP …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (GaCI) from the gallium chloride source to the substrate; deliverin g AsH₃ orthogonally relative to the GaCI directly at the substrate surface; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. Currently amended
The method of Claim 1, wherein mixing and effecting the reaction of the gallium chloride with the arsine directly at the substrate surface is accomplished by a close-coupled shower-head apparatus delivering the gallium chloride to mix with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: growing bulk GaAs to a thickness greater than 500 micrometers. Original
The method of Claim 1, wherein the substrate is an off-cut semiconductor substrate wafer, wherein an off-cut angle, relative to a primary crystallographic axis is greater than 1. Original
The method of Claim 1, further comprising: precluding growth of parasitic Gallium Arsenide (GaAs) deposits on chamber walls of the low pressure HVPE system through direct delivery of gallium chloride via a close-coupled shower-head apparatus to react with arsine flowing across the wafer surface. Original
The method of Claim 1, further comprising: minimizing the incorporation of Silicon (Si) and Oxygen (0) impurities to effectuate the long carrier lifetimes. Original
The method of Claim 1, further comprising providing a recessed horizontal wafer holder. Original
The method of Claim 1, further comprising: rotating the substrate, wherein the substrate is rotated during GaAs growth. Original
. Canceled
A method of forming bulk gallium arsenide (GaAs) having a carrier lifetime of at least microseconds comprising: providing a low-pressure hydride vapor epitaxy (HVPE) system including a reaction chamber; providing an arsine source; providing a gallium chloride source; delivering arsine (AsH₃) from the arsine source to a substrate inside the reaction chamber; delivering gallium chloride (Ga C I) from the gallium chloride source to the substrate; and mixing and effecting a reaction of the gallium chloride with the arsine directly at the substrate surface to create bulk GaAs having a carrier lifetime of at least 10 m icroseconds. New
Materials described outside the worked examples.
bulk gallium arsenide
GaAs
gallium chloride
GaCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.1) shows optical transmission spectra of various GaAs samples near the band edge and that the HVPE GaAs is the only sample with substantially no absorption …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bulk GaAs carrier lifetime (claimed minimum) | ≥ 10 microseconds | GaAs |
Related documents with shared materials, methods, properties, or citations.
arsine
AsH₃
hydrogen chloride
HCl
silicon dioxide
SiO₂
Pyrolytic Boron Nitride
BN
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
prior-art GaAs carrier lifetime (background reference, not this patent's result) |
| 1 microseconds |
GaAs |
bulk GaAs minimum thickness (claimed) | ≥ 500 micrometers | GaAs |
Temperature | 680–710 °C | — |
Thickness | 5–15 mm | — |
Thickness | 0.9–1.2 µm | — |
Flow Rate | 120–240 sccm | — |
Flow Rate | 75–90 sccm | — |
Thickness | 85–200 µm | — |
Thickness | 10–12 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 2.5 mm | — |
Thickness | ≥ 500 µm | — |
arsine
AsH₃
hydrogen chloride
HCl
silicon dioxide
SiO₂
Pyrolytic Boron Nitride
BN
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
prior-art GaAs carrier lifetime (background reference, not this patent's result) |
| 1 microseconds |
GaAs |
bulk GaAs minimum thickness (claimed) | ≥ 500 micrometers | GaAs |
Temperature | 680–710 °C | — |
Thickness | 5–15 mm | — |
Thickness | 0.9–1.2 µm | — |
Flow Rate | 120–240 sccm | — |
Flow Rate | 75–90 sccm | — |
Thickness | 85–200 µm | — |
Thickness | 10–12 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 2.5 mm | — |
Thickness | ≥ 500 µm | — |
arsine
AsH₃
hydrogen chloride
HCl
silicon dioxide
SiO₂
Pyrolytic Boron Nitride
BN
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
prior-art GaAs carrier lifetime (background reference, not this patent's result) |
| 1 microseconds |
GaAs |
bulk GaAs minimum thickness (claimed) | ≥ 500 micrometers | GaAs |
Temperature | 680–710 °C | — |
Thickness | 5–15 mm | — |
Thickness | 0.9–1.2 µm | — |
Flow Rate | 120–240 sccm | — |
Flow Rate | 75–90 sccm | — |
Thickness | 85–200 µm | — |
Thickness | 10–12 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 2.5 mm | — |
Thickness | ≥ 500 µm | — |
arsine
AsH₃
hydrogen chloride
HCl
silicon dioxide
SiO₂
Pyrolytic Boron Nitride
BN
FIG.2) shows non-linear absorption plots for melt grown and HVPE grown GaAs and that HVPE GaAs has significantly improved non-linear absorption compared to the …
prior-art GaAs carrier lifetime (background reference, not this patent's result) |
| 1 microseconds |
GaAs |
bulk GaAs minimum thickness (claimed) | ≥ 500 micrometers | GaAs |
Temperature | 680–710 °C | — |
Thickness | 5–15 mm | — |
Thickness | 0.9–1.2 µm | — |
Flow Rate | 120–240 sccm | — |
Flow Rate | 75–90 sccm | — |
Thickness | 85–200 µm | — |
Thickness | 10–12 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≥ 2.5 mm | — |
Thickness | ≥ 500 µm | — |