Patent
US 10,418,237AMORPHOUS BORON NITRIDE DIELECTRIC
Nicholas Glavin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,418,237Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. is a schematic elevational view of a nanoelectroncis structure according to one embodiment of the present disclosure; [0031]
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoelectronics structure comprising: a substrate layer having at least a first surface and having a thickness of less than 100 nm; and a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm, wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV. Currently amended
The nanoelectronics structure of Claim 1, wherein the dielectric layer comprises at least mole percent amorphous boron nitride. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (Si O 2), aluminum oxide (A 1 203), molybdenum disulfide (M o S₂), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS). Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 10 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV. Original
Canceled
A method for forming a dielectric layer on a substrate by pulsed laser deposition, comprising the steps of: providing at least one target comprising boron nitride; positioning a substrate, having at least a first surface and having a thickness of less than 100 nm, so that the distance from the target to the first surface of the substrate is from about 0.1 cm to about 10 cm; irradiating the target with a pulsed laser so as to ablate and vaporize at least a portion of the boron nitride; condensing at least a portion of the vaporized boron nitride on the first surface of the substrate so as to deposit a dielectric layer on the first surface of the substrate, wherein the dielectric layer has a thickness of less than 100 nm and comprises at least 90 mole percent amorphous boron nitride. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure of less than 100 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure from about 25 mTorr to about 75 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and an inert atmosphere, comprising less than 1.0 mole percent oxygen, is maintained within the interior of the pressure vessel during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the substrate is maintained at a temperature of less than 200 ° C during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target is positioned so that the distance from the target to the first surface of the substrate is from about 1 cm to about 5 cm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having a wavelength from about 150 nm to about 350 nm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least 1 J/cm 2. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least
A nanoelectronics structure comprising: a having a thickness of less than 20 nm; and a substrate layer and having a thickness of less than two-dimensional substrate material selected from (M o S₂) and graphene, and wherein the dielectric amorphous boron nitride. Original J/cm 2. Withdrawn substrate layer having at least a first surface and dielectric layer deposited on the first surface of the 20 nm, wherein the substrate layer comprises a the group consisting of molybdenum disulfide layer comprises at least 90 mole percent
Layer stacks claimed or described, ordered top of device to substrate.
nanoelectronics structure
nanoelectronics structure with 2D substrate
Materials described outside the worked examples.
amorphous boron nitride
BN
substrate materials (silicon, silicon oxide, single-crystalline, poly-crystalline, polymer, metal, two-dimensional)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 4–5 eV | BN |
Optical Band Gap | 4.3–4.7 eV |
Related documents with shared materials, methods, properties, or citations.
FILM PREPARED FROM A CASTING COMPOSITION COMPRISING A POLYMER AND SURFACE MODIFIED HEXAGONAL BORON NITRIDE PARTICLES
Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
Patent
Atlas literature
Patent
US 10,418,237Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. is a schematic elevational view of a nanoelectroncis structure according to one embodiment of the present disclosure; [0031]
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoelectronics structure comprising: a substrate layer having at least a first surface and having a thickness of less than 100 nm; and a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm, wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV. Currently amended
The nanoelectronics structure of Claim 1, wherein the dielectric layer comprises at least mole percent amorphous boron nitride. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (Si O 2), aluminum oxide (A 1 203), molybdenum disulfide (M o S₂), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS). Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 10 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV. Original
Canceled
A method for forming a dielectric layer on a substrate by pulsed laser deposition, comprising the steps of: providing at least one target comprising boron nitride; positioning a substrate, having at least a first surface and having a thickness of less than 100 nm, so that the distance from the target to the first surface of the substrate is from about 0.1 cm to about 10 cm; irradiating the target with a pulsed laser so as to ablate and vaporize at least a portion of the boron nitride; condensing at least a portion of the vaporized boron nitride on the first surface of the substrate so as to deposit a dielectric layer on the first surface of the substrate, wherein the dielectric layer has a thickness of less than 100 nm and comprises at least 90 mole percent amorphous boron nitride. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure of less than 100 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure from about 25 mTorr to about 75 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and an inert atmosphere, comprising less than 1.0 mole percent oxygen, is maintained within the interior of the pressure vessel during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the substrate is maintained at a temperature of less than 200 ° C during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target is positioned so that the distance from the target to the first surface of the substrate is from about 1 cm to about 5 cm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having a wavelength from about 150 nm to about 350 nm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least 1 J/cm 2. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least
A nanoelectronics structure comprising: a having a thickness of less than 20 nm; and a substrate layer and having a thickness of less than two-dimensional substrate material selected from (M o S₂) and graphene, and wherein the dielectric amorphous boron nitride. Original J/cm 2. Withdrawn substrate layer having at least a first surface and dielectric layer deposited on the first surface of the 20 nm, wherein the substrate layer comprises a the group consisting of molybdenum disulfide layer comprises at least 90 mole percent
Layer stacks claimed or described, ordered top of device to substrate.
nanoelectronics structure
nanoelectronics structure with 2D substrate
Materials described outside the worked examples.
amorphous boron nitride
BN
substrate materials (silicon, silicon oxide, single-crystalline, poly-crystalline, polymer, metal, two-dimensional)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 4–5 eV | BN |
Optical Band Gap | 4.3–4.7 eV |
Related documents with shared materials, methods, properties, or citations.
FILM PREPARED FROM A CASTING COMPOSITION COMPRISING A POLYMER AND SURFACE MODIFIED HEXAGONAL BORON NITRIDE PARTICLES
Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
Patent
Atlas literature
Patent
US 10,418,237Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. is a schematic elevational view of a nanoelectroncis structure according to one embodiment of the present disclosure; [0031]
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoelectronics structure comprising: a substrate layer having at least a first surface and having a thickness of less than 100 nm; and a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm, wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV. Currently amended
The nanoelectronics structure of Claim 1, wherein the dielectric layer comprises at least mole percent amorphous boron nitride. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (Si O 2), aluminum oxide (A 1 203), molybdenum disulfide (M o S₂), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS). Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 10 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV. Original
Canceled
A method for forming a dielectric layer on a substrate by pulsed laser deposition, comprising the steps of: providing at least one target comprising boron nitride; positioning a substrate, having at least a first surface and having a thickness of less than 100 nm, so that the distance from the target to the first surface of the substrate is from about 0.1 cm to about 10 cm; irradiating the target with a pulsed laser so as to ablate and vaporize at least a portion of the boron nitride; condensing at least a portion of the vaporized boron nitride on the first surface of the substrate so as to deposit a dielectric layer on the first surface of the substrate, wherein the dielectric layer has a thickness of less than 100 nm and comprises at least 90 mole percent amorphous boron nitride. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure of less than 100 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure from about 25 mTorr to about 75 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and an inert atmosphere, comprising less than 1.0 mole percent oxygen, is maintained within the interior of the pressure vessel during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the substrate is maintained at a temperature of less than 200 ° C during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target is positioned so that the distance from the target to the first surface of the substrate is from about 1 cm to about 5 cm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having a wavelength from about 150 nm to about 350 nm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least 1 J/cm 2. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least
A nanoelectronics structure comprising: a having a thickness of less than 20 nm; and a substrate layer and having a thickness of less than two-dimensional substrate material selected from (M o S₂) and graphene, and wherein the dielectric amorphous boron nitride. Original J/cm 2. Withdrawn substrate layer having at least a first surface and dielectric layer deposited on the first surface of the 20 nm, wherein the substrate layer comprises a the group consisting of molybdenum disulfide layer comprises at least 90 mole percent
Layer stacks claimed or described, ordered top of device to substrate.
nanoelectronics structure
nanoelectronics structure with 2D substrate
Materials described outside the worked examples.
amorphous boron nitride
BN
substrate materials (silicon, silicon oxide, single-crystalline, poly-crystalline, polymer, metal, two-dimensional)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 4–5 eV | BN |
Optical Band Gap | 4.3–4.7 eV |
Related documents with shared materials, methods, properties, or citations.
FILM PREPARED FROM A CASTING COMPOSITION COMPRISING A POLYMER AND SURFACE MODIFIED HEXAGONAL BORON NITRIDE PARTICLES
Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
Patent
Atlas literature
Patent
US 10,418,237Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. is a schematic elevational view of a nanoelectroncis structure according to one embodiment of the present disclosure; [0031]
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoelectronics structure comprising: a substrate layer having at least a first surface and having a thickness of less than 100 nm; and a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm, wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV. Currently amended
The nanoelectronics structure of Claim 1, wherein the dielectric layer comprises at least mole percent amorphous boron nitride. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates. Original
The nanoelectronics structure of Claim 1, wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (Si O 2), aluminum oxide (A 1 203), molybdenum disulfide (M o S₂), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS). Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 20 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer has a thickness of less than 10 nm. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6. Original
The nanoelectronics structure of Claim 1, wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV. Original
Canceled
A method for forming a dielectric layer on a substrate by pulsed laser deposition, comprising the steps of: providing at least one target comprising boron nitride; positioning a substrate, having at least a first surface and having a thickness of less than 100 nm, so that the distance from the target to the first surface of the substrate is from about 0.1 cm to about 10 cm; irradiating the target with a pulsed laser so as to ablate and vaporize at least a portion of the boron nitride; condensing at least a portion of the vaporized boron nitride on the first surface of the substrate so as to deposit a dielectric layer on the first surface of the substrate, wherein the dielectric layer has a thickness of less than 100 nm and comprises at least 90 mole percent amorphous boron nitride. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure of less than 100 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and the interior of the pressure vessel is maintained at a pressure from about 25 mTorr to about 75 mTorr during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target and the substrate are positioned within a pressure vessel and an inert atmosphere, comprising less than 1.0 mole percent oxygen, is maintained within the interior of the pressure vessel during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the substrate is maintained at a temperature of less than 200 ° C during the irradiating and condensing steps. Withdrawn
The method of Claim 11, wherein the target is positioned so that the distance from the target to the first surface of the substrate is from about 1 cm to about 5 cm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having a wavelength from about 150 nm to about 350 nm. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least 1 J/cm 2. Withdrawn
The method of Claim 11, wherein the pulsed laser irradiates the target with electromagnetic energy having an energy intensity of at least
A nanoelectronics structure comprising: a having a thickness of less than 20 nm; and a substrate layer and having a thickness of less than two-dimensional substrate material selected from (M o S₂) and graphene, and wherein the dielectric amorphous boron nitride. Original J/cm 2. Withdrawn substrate layer having at least a first surface and dielectric layer deposited on the first surface of the 20 nm, wherein the substrate layer comprises a the group consisting of molybdenum disulfide layer comprises at least 90 mole percent
Layer stacks claimed or described, ordered top of device to substrate.
nanoelectronics structure
nanoelectronics structure with 2D substrate
Materials described outside the worked examples.
amorphous boron nitride
BN
substrate materials (silicon, silicon oxide, single-crystalline, poly-crystalline, polymer, metal, two-dimensional)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2b. is a perspective view of a pulsed laser deposition system for use according to another embodiment of the present disclosure; and [0033] FIGS 3a-3h are …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 4–5 eV | BN |
Optical Band Gap | 4.3–4.7 eV |
Related documents with shared materials, methods, properties, or citations.
FILM PREPARED FROM A CASTING COMPOSITION COMPRISING A POLYMER AND SURFACE MODIFIED HEXAGONAL BORON NITRIDE PARTICLES
Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
tungsten
W
copper
Cu
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
molybdenum disulfide
MoS₂
graphene
polyethylene terephthalate
PET
polydimethylsiloxane
PDMS
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Dielectric Constant | 5.2–6.6 | BN |
— | 5–1200 eV | — |
Pressure | 1e-9 Torr | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–5 cm | — |
Pressure | 25–75 mTorr | — |
Thickness | 150–350 nm | — |
Thickness | 2–100 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 1 mTorr | — |
Temperature | ≤ 200 °C | — |
tungsten
W
copper
Cu
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
molybdenum disulfide
MoS₂
graphene
polyethylene terephthalate
PET
polydimethylsiloxane
PDMS
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Dielectric Constant | 5.2–6.6 | BN |
— | 5–1200 eV | — |
Pressure | 1e-9 Torr | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–5 cm | — |
Pressure | 25–75 mTorr | — |
Thickness | 150–350 nm | — |
Thickness | 2–100 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 1 mTorr | — |
Temperature | ≤ 200 °C | — |
tungsten
W
copper
Cu
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
molybdenum disulfide
MoS₂
graphene
polyethylene terephthalate
PET
polydimethylsiloxane
PDMS
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Dielectric Constant | 5.2–6.6 | BN |
— | 5–1200 eV | — |
Pressure | 1e-9 Torr | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–5 cm | — |
Pressure | 25–75 mTorr | — |
Thickness | 150–350 nm | — |
Thickness | 2–100 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 1 mTorr | — |
Temperature | ≤ 200 °C | — |
tungsten
W
copper
Cu
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
molybdenum disulfide
MoS₂
graphene
polyethylene terephthalate
PET
polydimethylsiloxane
PDMS
FIGS. 3a-3h of the present disclosure. Samples were also studied using a F E I Titan 80-300 S/TEM microscope operating at 300 kV, which was equipped with a Cs …
Dielectric Constant | 5.2–6.6 | BN |
— | 5–1200 eV | — |
Pressure | 1e-9 Torr | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–5 cm | — |
Pressure | 25–75 mTorr | — |
Thickness | 150–350 nm | — |
Thickness | 2–100 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 1 mTorr | — |
Temperature | ≤ 200 °C | — |