Excitonic shift current induced broadband THz pulse emission efficiency of layered single crystalline MoS2

Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature

Asymmetrical contact scaling and measurements in MoS2 FETs

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2

Skin Controlled Electronic and Neuromorphic Tattoos

Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs

Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions

Excitonic shift current induced broadband THz pulse emission efficiency of layered single crystalline MoS2

Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature

Asymmetrical contact scaling and measurements in MoS2 FETs

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2

Skin Controlled Electronic and Neuromorphic Tattoos

Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs

Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions

Excitonic shift current induced broadband THz pulse emission efficiency of layered single crystalline MoS2

Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature

Asymmetrical contact scaling and measurements in MoS2 FETs

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2

Skin Controlled Electronic and Neuromorphic Tattoos

Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs

Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions

Excitonic shift current induced broadband THz pulse emission efficiency of layered single crystalline MoS2

Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature

Asymmetrical contact scaling and measurements in MoS2 FETs

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors

A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2

Skin Controlled Electronic and Neuromorphic Tattoos

Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs

Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions